頁 399 - Diodes Incorporated 產品 | 黑森爾電子
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Diodes Incorporated 產品

記錄 22,098
頁  399/790
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hot DMP1022UFDF-7
Diodes Incorporated

MOSFET P-CH 12V 9.5A U-DFN2020-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 800mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 48.3nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 2712pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 730mW (Ta)
  • Rds On (Max) @ Id, Vgs: 15.3 mOhm @ 4A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (Type F)
  • Package / Case: 6-UDFN Exposed Pad
封裝: 6-UDFN Exposed Pad
庫存36,000
ZTX776
Diodes Incorporated

TRANS PNP 200V 1A E-LINE

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 200V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 5V
  • Power - Max: 1W
  • Frequency - Transition: 30MHz
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3
  • Supplier Device Package: E-Line (TO-92 compatible)
封裝: E-Line-3
庫存2,912
hot MMBTA28-7-F
Diodes Incorporated

TRANS NPN DARL 80V 0.5A SOT23-3

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
  • Current - Collector Cutoff (Max): 500nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
  • Power - Max: 300mW
  • Frequency - Transition: 125MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存265,680
hot ZXTP2008GTA
Diodes Incorporated

TRANS PNP 30V 5.5A SOT223

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 5.5A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 210mV @ 500mA, 5.5A
  • Current - Collector Cutoff (Max): 20nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
  • Power - Max: 3W
  • Frequency - Transition: 110MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
封裝: TO-261-4, TO-261AA
庫存188,412
hot DCX53-13
Diodes Incorporated

TRANS PNP 80V 1A SOT89-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: 200MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
封裝: TO-243AA
庫存173,016
hot FMMT618TA
Diodes Incorporated

TRANS NPN 20V 2.5A SOT23-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2.5A
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 2.5A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
  • Power - Max: 625mW
  • Frequency - Transition: 140MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存2,534,760
DDTC114GKA-7-F
Diodes Incorporated

TRANS PREBIAS NPN 200MW SC59-3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): -
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存4,688
DDTC114EE-7
Diodes Incorporated

TRANS PREBIAS NPN 150MW SOT523

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-523
  • Supplier Device Package: SOT-523
封裝: SOT-523
庫存3,520
MMBZ5234BW-7
Diodes Incorporated

DIODE ZENER 6.2V 200MW SOT323

  • Voltage - Zener (Nom) (Vz): 6.2V
  • Tolerance: ±5%
  • Power - Max: 200mW
  • Impedance (Max) (Zzt): 7 Ohms
  • Current - Reverse Leakage @ Vr: 5µA @ 4V
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
封裝: SC-70, SOT-323
庫存29,394
hot ZMV930TA
Diodes Incorporated

DIODE VAR CAP 8.7PF 12V SOD-323

  • Capacitance @ Vr, F: 2.9pF @ 4V, 50MHz
  • Capacitance Ratio: -
  • Capacitance Ratio Condition: -
  • Voltage - Peak Reverse (Max): 12V
  • Diode Type: Single
  • Q @ Vr, F: 200 @ 4V, 50MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
封裝: SC-76, SOD-323
庫存16,236
hot 1N5711WS-7
Diodes Incorporated

DIODE SCHOTTKY 70V 150MW SOD-323

  • Diode Type: Schottky - Single
  • Voltage - Peak Reverse (Max): 70V
  • Current - Max: 15mA
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Resistance @ If, F: -
  • Power Dissipation (Max): 150mW
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
封裝: SC-76, SOD-323
庫存150,000
LLSD103C-13
Diodes Incorporated

DIODE SCHOTTKY 20V 350MA MINMELF

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 350mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 10ns
  • Current - Reverse Leakage @ Vr: 5µA @ 10V
  • Capacitance @ Vr, F: 50pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AA
  • Supplier Device Package: Mini MELF
  • Operating Temperature - Junction: -
封裝: DO-213AA
庫存2,208
hot S1B-13
Diodes Incorporated

DIODE GEN PURP 100V 1A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3µs
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -65°C ~ 150°C
封裝: DO-214AC, SMA
庫存181,356
hot DFLS240-7
Diodes Incorporated

DIODE SCHOTTKY 40V 2A POWERDI123

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20µA @ 40V
  • Capacitance @ Vr, F: 28pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: POWERDI?123
  • Supplier Device Package: PowerDI? 123
  • Operating Temperature - Junction: -65°C ~ 125°C
封裝: POWERDI?123
庫存327,144
BAS70-06-7
Diodes Incorporated

DIODE ARRAY SCHOTTKY 70V SOT23-3

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 70V
  • Current - Average Rectified (Io) (per Diode): 70mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 100nA @ 50V
  • Operating Temperature - Junction: -55°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存4,160
hot SBR30A100CT
Diodes Incorporated

DIODE ARRAY SBR 100V 15A TO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Super Barrier
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 100V
  • Operating Temperature - Junction: -65°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封裝: TO-220-3
庫存43,944
AP7312-1833W6-7
Diodes Incorporated

IC REG LINEAR 1.8V/3.3V SOT26

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 2
  • Voltage - Input (Max): 6V
  • Voltage - Output (Min/Fixed): 1.8V, 3.3V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.3V @ 150mA, 0.2V @ 150mA
  • Current - Output: 150mA, 150mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 80µA
  • PSRR: 65dB (1kHz)
  • Control Features: Enable
  • Protection Features: Over Current, Over Temperature, Short Circuit
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-26
封裝: SOT-23-6
庫存105,984
ZRC250F03TC
Diodes Incorporated

IC VREF SHUNT 2.5V SOT23

  • Reference Type: Shunt
  • Output Type: Fixed
  • Voltage - Output (Min/Fixed): 2.5V
  • Voltage - Output (Max): -
  • Current - Output: 5mA
  • Tolerance: ±3%
  • Temperature Coefficient: 90ppm/°C
  • Noise - 0.1Hz to 10Hz: -
  • Noise - 10Hz to 10kHz: 60µVrms
  • Voltage - Input: -
  • Current - Supply: -
  • Current - Cathode: 20µA
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
封裝: TO-236-3, SC-59, SOT-23-3
庫存5,808
ZRT062GC1TA
Diodes Incorporated

IC VREF SHUNT 6.17V SOT223

  • Reference Type: Shunt
  • Output Type: Fixed
  • Voltage - Output (Min/Fixed): 6.17V
  • Voltage - Output (Max): -
  • Current - Output: 50mA
  • Tolerance: ±1%
  • Temperature Coefficient: 50ppm/°C
  • Noise - 0.1Hz to 10Hz: 50µVp-p
  • Noise - 10Hz to 10kHz: -
  • Voltage - Input: -
  • Current - Supply: -
  • Current - Cathode: 150µA
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
封裝: TO-261-4, TO-261AA
庫存14,868
ZXMS6005N8Q-13
Diodes Incorporated

LOW SIDE INTELLIFET SO-8

  • Switch Type: -
  • Number of Outputs: -
  • Ratio - Input:Output: -
  • Output Configuration: -
  • Output Type: -
  • Interface: -
  • Voltage - Load: -
  • Voltage - Supply (Vcc/Vdd): -
  • Current - Output (Max): -
  • Rds On (Typ): -
  • Input Type: -
  • Features: -
  • Fault Protection: -
  • Operating Temperature: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存5,520
74AHC08S14-13
Diodes Incorporated

IC GATE AND 4CH 2-INP 14-SO

  • Logic Type: AND Gate
  • Number of Circuits: 4
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 2 V ~ 5.5 V
  • Current - Quiescent (Max): 20µA
  • Current - Output High, Low: 8mA, 8mA
  • Logic Level - Low: 0.5 V ~ 1.65 V
  • Logic Level - High: 1.5 V ~ 3.85 V
  • Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 14-SO
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
封裝: 14-SOIC (0.154", 3.90mm Width)
庫存2,048
PT7C5036F1-2GWF
Diodes Incorporated

IC CLOCKING XO

  • PLL: -
  • Main Purpose: -
  • Input: -
  • Output: -
  • Number of Circuits: -
  • Ratio - Input:Output: -
  • Differential - Input:Output: -
  • Frequency - Max: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存4,160
hot TBZ363C7V0-7-F
Diodes Incorporated

TVS DIODE 4VWM SOT363

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 3
  • Voltage - Reverse Standoff (Typ): 4V
  • Voltage - Breakdown (Min): -
  • Voltage - Clamping (Max) @ Ipp: -
  • Current - Peak Pulse (10/1000µs): -
  • Power - Peak Pulse: -
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
封裝: 6-TSSOP, SC-88, SOT-363
庫存201,600
AP9101CAK-BETRG1
Diodes Incorporated

MULTICELL BATT MANAGER SOT25

  • Function: Battery Protection
  • Battery Chemistry: Lithium Ion/Polymer
  • Number of Cells: 1
  • Fault Protection: Over Current, Over Voltage
  • Interface: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SOT-25
封裝: SC-74A, SOT-753
庫存2,576
DMTH6009LPSQ-13
Diodes Incorporated

MOSFET N-CH 60V PWRDI5060

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 11.76A (Ta), 89.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
封裝: -
Request a Quote
DCX114YUQ-13R-F
Diodes Incorporated

PREBIAS TRANSISTOR SOT363 T&R 10

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
封裝: -
Request a Quote
B370-13-F-2477
Diodes Incorporated

DIODE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 70 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 70 V
  • Capacitance @ Vr, F: 100pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC
  • Operating Temperature - Junction: -55°C ~ 125°C
封裝: -
Request a Quote
DMN62D2UT-13
Diodes Incorporated

2N7002 FAMILY SOT523 T&R 10K

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 334mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 400mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-523
  • Package / Case: SOT-523
封裝: -
Request a Quote