Diodes Incorporated 產品

ZVN4424GTC

Diodes Incorporated

MOSFET N-CH 240V 0.5A SOT223

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 240V
• Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
• Vgs(th) (Max) @ Id: 1.8V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
• Vgs (Max): ±40V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 5.5 Ohm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-223
• Package / Case: TO-261-4, TO-261AA

封裝: TO-261-4, TO-261AA

ZXMN6A09DN8TC

Diodes Incorporated

MOSFET 2N-CH 60V 4.3A 8SOIC

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 4.3A
• Rds On (Max) @ Id, Vgs: 40 mOhm @ 8.2A, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1407pF @ 40V
• Power - Max: 1.25W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

封裝: 8-SOIC (0.154", 3.90mm Width)

DMP2035UTS-13

Diodes Incorporated

MOSFET 2P-CH 20V 6.04A 8TSSOP

• FET Type: 2 P-Channel (Dual) Common Drain
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 6.04A
• Rds On (Max) @ Id, Vgs: 35 mOhm @ 4A, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15.4nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 10V
• Power - Max: 890mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 8-TSSOP

封裝: 8-TSSOP (0.173", 4.40mm Width)

ZXMC3A16DN8TA

Diodes Incorporated

MOSFET N/P-CH 30V 8SOIC

• FET Type: N and P-Channel
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 4.9A, 4.1A
• Rds On (Max) @ Id, Vgs: 35 mOhm @ 9A, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
• Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
• Power - Max: 1.25W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

封裝: 8-SOIC (0.154", 3.90mm Width)

DDTA143ZE-7-F

Diodes Incorporated

TRANS PREBIAS PNP 150MW SOT523

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SOT-523
• Supplier Device Package: SOT-523

封裝: SOT-523

ZUMTS17HTC

Diodes Incorporated

TRANSISTOR RF NPN SC70-3

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 15V
• Frequency - Transition: 1.3GHz
• Noise Figure (dB Typ @ f): 4.5dB @ 500MHz
• Gain: -
• Power - Max: 330mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 1V
• Current - Collector (Ic) (Max): 25mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

封裝: SC-70, SOT-323

BZT52C10S-7-F

Diodes Incorporated

DIODE ZENER 10V 200MW SOD323

• Voltage - Zener (Nom) (Vz): 10V
• Tolerance: ±6%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 20 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 7V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

封裝: SC-76, SOD-323

S5DC-13

Diodes Incorporated

DIODE GEN PURP 200V 5A SMC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Capacitance @ Vr, F: 40pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: SMC
• Operating Temperature - Junction: -65°C ~ 150°C

封裝: DO-214AB, SMC

SBG1045CT-T-F

Diodes Incorporated

DIODE ARRAY SCHOTTKY 45V D2PAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 45V
• Operating Temperature - Junction: -65°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB (D2PAK)

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

GBU6005

Diodes Incorporated

RECT BRIDGE GPP 6A 50V GBU

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 50V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
• Current - Reverse Leakage @ Vr: 5µA @ 50V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBU
• Supplier Device Package: GBU

封裝: 4-SIP, GBU

AP7365-18SNG-7

Diodes Incorporated

IC REG LIN 1.8V 600MA 6DFN2020

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 6V
• Voltage - Output (Min/Fixed): 1.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.6V @ 600mA
• Current - Output: 600mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 80µA
• PSRR: 65dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 6-UDFN Exposed Pad
• Supplier Device Package: 6-DFN2020 (2x2)

封裝: 6-UDFN Exposed Pad

AP2401FGE-7

Diodes Incorporated

IC USB SWITCH DFN3030-8

• Switch Type: USB Switch
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: P-Channel
• Interface: On/Off
• Voltage - Load: 2.7 V ~ 5.5 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 2A
• Rds On (Typ): 70 mOhm
• Input Type: Non-Inverting
• Features: Load Discharge, Status Flag
• Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 8-UDFN Exposed Pad
• Supplier Device Package: U-DFN3030-8 (Type E)

封裝: 8-UDFN Exposed Pad

PI4ULS3V204GAEX

Diodes Incorporated

IC LEVEL SHIFTER 4BIT 12CSP

• Translator Type: Voltage Level
• Channel Type: Bidirectional
• Number of Circuits: 1
• Channels per Circuit: 4
• Voltage - VCCA: 1.1V ~ 3.6V
• Voltage - VCCB: 1.1V ~ 3.6V
• Input Signal: -
• Output Signal: -
• Output Type: Open Drain, Push-Pull
• Data Rate: 2Mbps, 24Mbps
• Operating Temperature: -40°C ~ 85°C (TA)
• Features: Auto-Direction Sensing
• Mounting Type: Surface Mount
• Package / Case: 12-UFBGA, WLCSP
• Supplier Device Package: 12-CSP (1.87x1.37)

封裝: 12-UFBGA, WLCSP

PI3B16232A

Diodes Incorporated

IC 16:32-BIT BUS SW 56-TSSOP

• Type: Multiplexer/Demultiplexer
• Circuit: 16 x 1:2
• Independent Circuits: 1
• Current - Output High, Low: -
• Voltage Supply Source: Single Supply
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 56-TFSOP (0.240", 6.10mm Width)
• Supplier Device Package: 56-TSSOP

封裝: 56-TFSOP (0.240", 6.10mm Width)

PI7VD9004AAHFDEX

Diodes Incorporated

VIDEO DECODER LQFP-128

• Type: Video Decoder
• Applications: Automotive
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

PI3HDMI415-AZDE

Diodes Incorporated

IC DVI/HDMI MUX/DEMUX TQFN

• Applications: HDMI
• Interface: -
• Voltage - Supply: 3.3V
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: 48-TQFN (7x7)
• Mounting Type: Surface Mount

封裝: 48-VFQFN Exposed Pad

PI2EQX8864AZLE

Diodes Incorporated

IC REDRIVER PCIE 4CH 72TQFN

• Type: Buffer, ReDriver
• Applications: PCIe
• Input: -
• Output: -
• Data Rate (Max): 8Gbps
• Number of Channels: 4
• Delay Time: -
• Signal Conditioning: -
• Capacitance - Input: -
• Voltage - Supply: 1.5V
• Current - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: 72-WFQFN Exposed Pad
• Supplier Device Package: 72-TQFN (11x5)

封裝: 72-WFQFN Exposed Pad

PI6C185-01QEX

Diodes Incorporated

IC CLK BUFFER 1:5 140MHZ 16QSOP

• Type: Fanout Buffer (Distribution)
• Number of Circuits: 1
• Ratio - Input:Output: 1:5
• Differential - Input:Output: No/No
• Input: TTL
• Output: TTL
• Frequency - Max: 140MHz
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 16-SSOP (0.154", 3.90mm Width)
• Supplier Device Package: 16-QSOP

封裝: 16-SSOP (0.154", 3.90mm Width)

PT7C5006ANEWE

Diodes Incorporated

XO CLOCK SO-8

• PLL: -
• Main Purpose: -
• Input: -
• Output: -
• Number of Circuits: -
• Ratio - Input:Output: -
• Differential - Input:Output: -
• Frequency - Max: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

PS8A0033PEX

Diodes Incorporated

HEATER CONTROLLER DIP-16

• Applications: -
• Current - Supply: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

DMN3066LVTQ-7

Diodes Incorporated

MOSFET BVDSS: 25V~30V TSOT26 T&R

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 10 V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 900mW
• Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TSOT-26
• Package / Case: SOT-23-6 Thin, TSOT-23-6

封裝: -

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B560C-13-F-2477

Diodes Incorporated

DIODE

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 60 V
• Capacitance @ Vr, F: 300pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: SMC
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

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ES3GB_HF

Diodes Incorporated

SUPERFAST RECOVERY RECTIFIER SMB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 400 V
• Capacitance @ Vr, F: 45pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

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DMP45H21DHE-13

Diodes Incorporated

MOSFET P-CH 450V 600MA SOT223

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 450 V
• Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1003 pF @ 25 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 12.5W (Tc)
• Rds On (Max) @ Id, Vgs: 21Ohm @ 300mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-223-3
• Package / Case: TO-261-4, TO-261AA

封裝: -

DMTH43M8LPSWQ-13

Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI506

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3367 pF @ 20 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.7W (Ta), 83.3W (Tc)
• Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount, Wettable Flank
• Supplier Device Package: PowerDI5060-8 (Type UX)
• Package / Case: 8-PowerTDFN

封裝: -

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ZXTP03200GTA

Diodes Incorporated

IC TRANSISTOR HIGH VOLT SOT223

• Transistor Type: -
• Current - Collector (Ic) (Max): -
• Voltage - Collector Emitter Breakdown (Max): -
• Vce Saturation (Max) @ Ib, Ic: -
• Current - Collector Cutoff (Max): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Power - Max: -
• Frequency - Transition: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

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BC847BVNQ-7

Diodes Incorporated

GENERAL PURPOSE TRANSISTOR SOT56

• Transistor Type: 1 NPN, 1 PNP Complementary
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 150mW
• Frequency - Transition: 300MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: SOT-563

封裝: -

DMT8008SK3-13

Diodes Incorporated

MOSFET BVDSS: 61V~100V TO252 T&R

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80 V
• Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.7W (Ta)
• Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252 (DPAK)
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封裝: -

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