Diodes Incorporated 產品

FL400WFMT1

Diodes Incorporated

CRYSTAL 40.0000MHZ 12PF SMD

• Type: MHz Crystal
• Frequency: 40MHz
• Frequency Stability: ±17ppm
• Frequency Tolerance: ±7ppm
• Load Capacitance: 12pF
• ESR (Equivalent Series Resistance): 30 Ohm
• Operating Mode: Fundamental
• Operating Temperature: -40°C ~ 100°C
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.031" (0.78mm)

封裝: 4-SMD, No Lead

DMN4800LSSL-13

Diodes Incorporated

MOSFET N-CH 30V 8A 8-SO

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1.6V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.46W (Ta)
• Rds On (Max) @ Id, Vgs: 14 mOhm @ 8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封裝: 8-SOIC (0.154", 3.90mm Width)

DMN53D0U-7

Diodes Incorporated

MOSFET N-CH 50V 0.3A SOT23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 50V
• Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 25V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 520mW (Ta)
• Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23
• Package / Case: TO-236-3, SC-59, SOT-23-3

封裝: TO-236-3, SC-59, SOT-23-3

DMN2028UFU-7

Diodes Incorporated

MOSFET 2N-CH 20V 7.5A UDFN2030-6

• FET Type: 2 N-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 7.5A
• Rds On (Max) @ Id, Vgs: 20.2 mOhm @ 4.5A, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 18.4nC @ 8V
• Input Capacitance (Ciss) (Max) @ Vds: 887pF @ 10V
• Power - Max: 900mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-UFDFN Exposed Pad
• Supplier Device Package: U-DFN2030-6 (Type B)

封裝: 6-UFDFN Exposed Pad

MMSTA56-7-F

Diodes Incorporated

TRANS PNP 80V 0.5A SC70-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 80V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
• Power - Max: 200mW
• Frequency - Transition: 50MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

封裝: SC-70, SOT-323

FZT789ATA

Diodes Incorporated

TRANS PNP 25V 3A SOT-223

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 3A
• Voltage - Collector Emitter Breakdown (Max): 25V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 3A
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
• Power - Max: 2W
• Frequency - Transition: 100MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

封裝: TO-261-4, TO-261AA

DCX142JH-7

Diodes Incorporated

TRANS PREBIAS NPN/PNP SOT563

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 470
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): -
• Frequency - Transition: 200MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: SOT-563

封裝: SOT-563, SOT-666

BZX84C18W-7

Diodes Incorporated

DIODE ZENER 18V 200MW SOT323

• Voltage - Zener (Nom) (Vz): 18V
• Tolerance: ±6%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 45 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 12.6V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

封裝: SC-70, SOT-323

DDZ33DSF-7

Diodes Incorporated

DIODE ZENER 32.3V 500MW SOD323F

• Voltage - Zener (Nom) (Vz): 32.3V
• Tolerance: ±3%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 65 Ohms
• Current - Reverse Leakage @ Vr: 70nA @ 29.9V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F

封裝: SC-90, SOD-323F

PR1503S-A

Diodes Incorporated

DIODE GEN PURP 200V 1.5A AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1.5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Capacitance @ Vr, F: 20pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41
• Operating Temperature - Junction: -65°C ~ 150°C

封裝: DO-204AL, DO-41, Axial

FR805

Diodes Incorporated

DIODE GEN PURP 600V 8A TO220A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 250ns
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220a
• Operating Temperature - Junction: -65°C ~ 175°C

封裝: TO-220-2

MBR5H150VPA-E1

Diodes Incorporated

DIODE SCHOTTKY 150V 5A DO27

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 920mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 8µA @ 150V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: DO-27
• Operating Temperature - Junction: 175°C (Max)

封裝: DO-201AA, DO-27, Axial

AP2210K-2.8TRE1

Diodes Incorporated

IC REG LINEAR 2.8V 300MA SOT23-5

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 13.2V
• Voltage - Output (Min/Fixed): 2.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.5V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 180µA ~ 15mA
• PSRR: 75dB (100Hz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature, Reverse Polarity
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SOT-23-5

封裝: SC-74A, SOT-753

APX810S05-44SA-7

Diodes Incorporated

RESET GENERATOR SOT23

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Push-Pull, Totem Pole
• Reset: Active High
• Reset Timeout: 20 ms Minimum
• Voltage - Threshold: 4.38V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

PS8A0081WEX

Diodes Incorporated

HEATER CONTROLLER SO-8

• Applications: -
• Current - Supply: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

PT8A3518BWEX

Diodes Incorporated

IRON CONTROLLER SO-8

• Applications: -
• Current - Supply: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

74LVC1G00Z-7

Diodes Incorporated

IC GATE NAND 1CH 2-INP SOT-553

• Logic Type: NAND Gate
• Number of Circuits: 1
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 1.65 V ~ 5.5 V
• Current - Quiescent (Max): 200µA
• Current - Output High, Low: 32mA, 32mA
• Logic Level - Low: 0.7 V ~ 0.8 V
• Logic Level - High: 1.7 V ~ 2 V
• Max Propagation Delay @ V, Max CL: 1.8ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-553
• Package / Case: SOT-553

封裝: SOT-553

74AHC1G00W5-7

Diodes Incorporated

IC GATE NAND 1CH 2-INP SOT-25

• Logic Type: NAND Gate
• Number of Circuits: 1
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 2 V ~ 5.5 V
• Current - Quiescent (Max): 1µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.5 V ~ 1.65 V
• Logic Level - High: 1.5 V ~ 3.85 V
• Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-25
• Package / Case: SC-74A, SOT-753

封裝: SC-74A, SOT-753

PI2EQX4432DZDE

Diodes Incorporated

IC REDRIVER PCIE 4CH 48TQFN

• Type: Buffer, ReDriver
• Applications: PCIe
• Input: CML
• Output: CML
• Data Rate (Max): 2.5Gbps
• Number of Channels: 4
• Delay Time: -
• Signal Conditioning: Input Equalization, Output De-Emphasis
• Capacitance - Input: -
• Voltage - Supply: 1.7 V ~ 1.9 V
• Current - Supply: -
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: -
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: 48-TQFN (7x7)

封裝: 48-VFQFN Exposed Pad

PT7C4501WEX

Diodes Incorporated

FREQUENCY MULTIPLIER

• Type: -
• PLL: -
• Input: -
• Output: -
• Number of Circuits: -
• Ratio - Input:Output: -
• Differential - Input:Output: -
• Frequency - Max: -
• Divider/Multiplier: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

PI49FCT805TSE

Diodes Incorporated

IC CLK BUFFER 1:5 50MHZ 20SOIC

• Type: Fanout Buffer (Distribution)
• Number of Circuits: 2
• Ratio - Input:Output: 1:5
• Differential - Input:Output: No/No
• Input: CMOS, TTL
• Output: CMOS
• Frequency - Max: 50MHz
• Voltage - Supply: 4.75 V ~ 5.25 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 20-SOIC

封裝: 20-SOIC (0.295", 7.50mm Width)

PI6C20400BLE-2017

Diodes Incorporated

CLOCK BUFFER TSSOP-28

• Type: -
• Number of Circuits: -
• Ratio - Input:Output: -
• Differential - Input:Output: -
• Input: -
• Output: -
• Frequency - Max: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

SMBJ22CA-13

Diodes Incorporated

TVS DIODE 22VWM 35.5VC SMB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 22V
• Voltage - Breakdown (Min): 24.4V
• Voltage - Clamping (Max) @ Ipp: 35.5V
• Current - Peak Pulse (10/1000µs): 16.9A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB

封裝: DO-214AA, SMB

AH3775-P-A

Diodes Incorporated

MAGNETIC SWITCH LATCH 3SIP

• Function: Latch
• Technology: Hall Effect
• Polarization: South Pole
• Sensing Range: 9mT Trip, -9mT Release
• Test Condition: -40°C ~ 125°C
• Voltage - Supply: 3 V ~ 28 V
• Current - Supply (Max): 4mA
• Current - Output (Max): 60mA
• Output Type: Open Drain
• Features: Temperature Compensated
• Operating Temperature: -40°C ~ 125°C (TA)
• Package / Case: 3-SIP, Formed Leads
• Supplier Device Package: 3-SIP

封裝: 3-SIP, Formed Leads

AH3766Q-P-B

Diodes Incorporated

MAGNETIC SWITCH LATCH 3SIP

• Function: Latch
• Technology: Hall Effect
• Polarization: South Pole
• Sensing Range: 14mT Trip, -14mT Release
• Test Condition: -40°C ~ 150°C
• Voltage - Supply: 3 V ~ 28 V
• Current - Supply (Max): 4mA
• Current - Output (Max): 60mA
• Output Type: Open Drain
• Features: Temperature Compensated
• Operating Temperature: -40°C ~ 150°C (TA)
• Package / Case: 3-SIP Module
• Supplier Device Package: 3-SIP

封裝: 3-SIP Module

BAT54SW-13-F-2477

Diodes Incorporated

DIODE ARR SCHOT 30V 200MA SOT323

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io) (per Diode): 200mA
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5 ns
• Current - Reverse Leakage @ Vr: 2 µA @ 25 V
• Operating Temperature - Junction: -65°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

封裝: -

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ADC144EUQ-7

Diodes Incorporated

PREBIAS TRANSISTOR SOT363 T&R 3K

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 47kOhms
• Resistor - Emitter Base (R2) (Ohms): 47kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 270mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

封裝: -

DMT615MLFV-13

Diodes Incorporated

MOSFET N-CH 60V PWRDI3333

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 38A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1039 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.76W (Ta)
• Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerDI3333-8 (Type UX)
• Package / Case: 8-PowerVDFN

封裝: -

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