頁 37 - Vishay Siliconix 產品 | 黑森爾電子
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Vishay Siliconix 產品

記錄 5,544
頁  37/198
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2N4339-2
Vishay Siliconix

MOSFET N-CH 50V 1.5MA TO-206AA

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 50V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 500µA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 600mV @ 100nA
  • Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-206AA (TO-18)
封裝: TO-206AA, TO-18-3 Metal Can
庫存6,176
2N5116JTX02
Vishay Siliconix

JFET P-CH 30V TO-18

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-206AA (TO-18)
封裝: TO-206AA, TO-18-3 Metal Can
庫存5,040
SI4404DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 15A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 23A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存2,608
hot SIE830DF-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 50A 10-POLARPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 10-PolarPAK? (S)
  • Package / Case: 10-PolarPAK? (S)
封裝: 10-PolarPAK? (S)
庫存8,652
SI1067X-T1-E3
Vishay Siliconix

MOSFET P-CH 20V 1.06A SOT563F

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 236mW (Ta)
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.06A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-89-6
  • Package / Case: SOT-563, SOT-666
封裝: SOT-563, SOT-666
庫存4,624
SI7866ADP-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 40A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5415pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
封裝: PowerPAK? SO-8
庫存5,104
SQM200N04-1M7L_GE3
Vishay Siliconix

MOSFET N-CH 40V 200A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 291nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11168pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7
  • Package / Case: TO-263-7, D2Pak (6 Leads + Tab)
封裝: TO-263-7, D2Pak (6 Leads + Tab)
庫存3,120
hot SIA811ADJ-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 4.5A PPAK SC70-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1.8W (Ta), 6.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 116 mOhm @ 2.8A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SC-70-6 Dual
  • Package / Case: PowerPAK? SC-70-6 Dual
封裝: PowerPAK? SC-70-6 Dual
庫存181,476
SI7633DP-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 60A PPAK 8SO

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9500pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
封裝: PowerPAK? SO-8
庫存2,304
hot IRFP450LCPBF
Vishay Siliconix

MOSFET N-CH 500V 14A TO-247AC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 8.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
封裝: TO-247-3
庫存4,832
hot SI3460BDV-T1-E3
Vishay Siliconix

MOSFET N-CH 20V 8A 6-TSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 3.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 27 mOhm @ 5.1A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
封裝: SOT-23-6 Thin, TSOT-23-6
庫存579,960
hot SI7454DP-T1-E3
Vishay Siliconix

MOSFET N-CH 100V 5A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.9W (Ta)
  • Rds On (Max) @ Id, Vgs: 34 mOhm @ 7.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
封裝: PowerPAK? SO-8
庫存34,476
SI6955ADQ-T1-E3
Vishay Siliconix

MOSFET 2P-CH 30V 2.5A 8-TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.9A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 830mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
封裝: 8-TSSOP (0.173", 4.40mm Width)
庫存3,776
hot SI6925ADQ-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 20V 3.3A 8-TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.3A
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.9A, 4.5V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 800mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
封裝: 8-TSSOP (0.173", 4.40mm Width)
庫存387,024
hot SIP21106DVP-12-E3
Vishay Siliconix

IC REG LINEAR 1.2V 150MA TSC75-6

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 6V
  • Voltage - Output (Min/Fixed): 1.2V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 150mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 85µA
  • PSRR: 75dB ~ 40dB (1kHz ~ 100kHz)
  • Control Features: Enable
  • Protection Features: Over Temperature, Short Circuit
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? TSC-75-6
  • Supplier Device Package: PowerPAK? TSC75-6
封裝: PowerPAK? TSC-75-6
庫存108,000
SI9166BQ-T1-E3
Vishay Siliconix

IC REG BCK BST 1.5A SYNC 16TSSOP

  • Function: Step-Up, Step-Down
  • Output Configuration: Positive
  • Topology: Buck, Boost
  • Output Type: -
  • Number of Outputs: 1
  • Voltage - Input (Min): 2.7V
  • Voltage - Input (Max): 6V
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Current - Output: 1.5A (Switch)
  • Frequency - Switching: 200kHz ~ 2MHz
  • Synchronous Rectifier: Yes
  • Operating Temperature: -25°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 16-TSSOP
封裝: 16-TSSOP (0.173", 4.40mm Width)
庫存6,864
90731022A
Vishay Siliconix

MOSFET

  • Switch Circuit: -
  • Multiplexer/Demultiplexer Circuit: -
  • Number of Circuits: -
  • On-State Resistance (Max): -
  • Channel-to-Channel Matching (ΔRon): -
  • Voltage - Supply, Single (V+): -
  • Voltage - Supply, Dual (V±): -
  • Switch Time (Ton, Toff) (Max): -
  • -3db Bandwidth: -
  • Charge Injection: -
  • Channel Capacitance (CS(off), CD(off)): -
  • Current - Leakage (IS(off)) (Max): -
  • Crosstalk: -
  • Operating Temperature: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存4,000
DG413HSDY-T1
Vishay Siliconix

IC SWITCH QUAD SPST 16-SOIC

  • Switch Circuit: SPST - NO/NC
  • Multiplexer/Demultiplexer Circuit: 1:1
  • Number of Circuits: 4
  • On-State Resistance (Max): 35 Ohm
  • Channel-to-Channel Matching (ΔRon): -
  • Voltage - Supply, Single (V+): 12V
  • Voltage - Supply, Dual (V±): ±5 V ~ 20 V
  • Switch Time (Ton, Toff) (Max): 105ns, 80ns
  • -3db Bandwidth: -
  • Charge Injection: 22pC
  • Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
  • Current - Leakage (IS(off)) (Max): 250pA
  • Crosstalk: -88dB @ 1MHz
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
封裝: 16-SOIC (0.154", 3.90mm Width)
庫存3,600
DG406BDN
Vishay Siliconix

IC ANALOG SWITCH SPDT 28PLCC

  • Switch Circuit: -
  • Multiplexer/Demultiplexer Circuit: 16:1
  • Number of Circuits: 1
  • On-State Resistance (Max): 60 Ohm
  • Channel-to-Channel Matching (ΔRon): 3 Ohm
  • Voltage - Supply, Single (V+): 12V
  • Voltage - Supply, Dual (V±): ±5 V ~ 20 V
  • Switch Time (Ton, Toff) (Max): 107ns, 88ns
  • -3db Bandwidth: -
  • Charge Injection: 11pC
  • Channel Capacitance (CS(off), CD(off)): 6pF, 108pF
  • Current - Leakage (IS(off)) (Max): 500pA
  • Crosstalk: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 28-LCC (J-Lead)
  • Supplier Device Package: 28-PLCC (11.51x11.51)
封裝: 28-LCC (J-Lead)
庫存5,616
DG2517DQ-T1-E3
Vishay Siliconix

IC SWITCH DUAL SPDT 10MSOP

  • Switch Circuit: SPDT
  • Multiplexer/Demultiplexer Circuit: 2:1
  • Number of Circuits: 2
  • On-State Resistance (Max): 4 Ohm
  • Channel-to-Channel Matching (ΔRon): 100 mOhm
  • Voltage - Supply, Single (V+): 1.8 V ~ 5.5 V
  • Voltage - Supply, Dual (V±): -
  • Switch Time (Ton, Toff) (Max): 25ns, 20ns
  • -3db Bandwidth: 242MHz
  • Charge Injection: 2pC
  • Channel Capacitance (CS(off), CD(off)): 8pF
  • Current - Leakage (IS(off)) (Max): 1nA
  • Crosstalk: -73dB @ 1MHz
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 10-MSOP
封裝: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
庫存5,360
hot DG2735DN-T1-E4
Vishay Siliconix

IC SWITCH 2XSPDT 500MOHM MINIQFN

  • Switch Circuit: SPDT
  • Multiplexer/Demultiplexer Circuit: 2:1
  • Number of Circuits: 2
  • On-State Resistance (Max): 500 mOhm
  • Channel-to-Channel Matching (ΔRon): 60 mOhm
  • Voltage - Supply, Single (V+): 1.65 V ~ 4.3 V
  • Voltage - Supply, Dual (V±): -
  • Switch Time (Ton, Toff) (Max): 78ns, 58ns
  • -3db Bandwidth: 50MHz
  • Charge Injection: -
  • Channel Capacitance (CS(off), CD(off)): 55pF
  • Current - Leakage (IS(off)) (Max): 2nA
  • Crosstalk: -70dB @ 100kHz
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 8-UFQFN
  • Supplier Device Package: 8-miniQFN (1.4x1.4)
封裝: 8-UFQFN
庫存226,656
SQD100N03-3M2L_GE3
Vishay Siliconix

MOSFET N-CH 30V 100A TO252AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6316 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封裝: -
Request a Quote
SIC438DED-T1-GE3
Vishay Siliconix

IC REG BUCK ADJ 8A POWERPAK

  • Function: Step-Down
  • Output Configuration: Positive
  • Topology: Buck
  • Output Type: Adjustable
  • Number of Outputs: 1
  • Voltage - Input (Min): 3V
  • Voltage - Input (Max): 28V
  • Voltage - Output (Min/Fixed): 0.6V
  • Voltage - Output (Max): 25.2V
  • Current - Output: 8A
  • Frequency - Switching: 300kHz ~ 1MHz
  • Synchronous Rectifier: Yes
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-PowerWFQFN
  • Supplier Device Package: PowerPAK® MLP44-24
封裝: -
庫存8,184
SIS176LDN-T1-GE3
Vishay Siliconix

N-CHANNEL 70 V (D-S) MOSFET POWE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 70 V
  • Current - Continuous Drain (Id) @ 25°C: 12.9A (Ta), 42.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V
  • Vgs(th) (Max) @ Id: 1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 35 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.9mOhm @ 10A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8
  • Package / Case: PowerPAK® 1212-8
封裝: -
庫存59,349
SQJ211ELP-T1_GE3
Vishay Siliconix

MOSFET P-CH 100V 33.6A PPAK SO-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 33.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
封裝: -
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SISS26LDN-T1-GE3
Vishay Siliconix

MOSFET N-CH 60V 23.7A/81.2A PPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 81.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8S
  • Package / Case: PowerPAK® 1212-8S
封裝: -
庫存3,357
SIHD3N50DT5-GE3
Vishay Siliconix

MOSFET N-CH 500V 3A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 69W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.2Ohm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封裝: -
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SIPQ32433BDN-T1E3
Vishay Siliconix

LOAD SWITCH W/ PROGRAMMABLE OVP

  • Function: Electronic Fuse
  • Sensing Method: High-Side
  • Accuracy: ±8%
  • Voltage - Input: 2.8V ~ 22V
  • Current - Output: 3.5A
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-VFDFN Exposed Pad
  • Supplier Device Package: 10-DFN (3x3)
封裝: -
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