頁 19 - Vishay Siliconix 產品

零件編號	製造商	描述	封裝	庫存
IRL3303D1STRR	Vishay Siliconix	MOSFET N-CH 30V 38A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存6,128
SI7880ADP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 40A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.4W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	封裝: PowerPAK? SO-8	庫存38,388
SQM40N15-38_GE3	Vishay Siliconix	MOSFET N-CH 150V 40A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3390pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 166W (Tc) Rds On (Max) @ Id, Vgs: 38 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存7,088
SI5853DDC-T1-E3	Vishay Siliconix	MOSFET P-CH 20V 4A 1206-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V Vgs (Max): ±8V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.3W (Ta), 3.1W (Tc) Rds On (Max) @ Id, Vgs: 105 mOhm @ 2.9A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET? Package / Case: 8-SMD, Flat Lead	封裝: 8-SMD, Flat Lead	庫存1,627,944
SI7858BDP-T1-GE3	Vishay Siliconix	MOSFET N-CH 12V 40A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 84nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5760pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 5W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 15A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	封裝: PowerPAK? SO-8	庫存4,912
SI7149DP-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 50A PPAK SO-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 147nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4590pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 5.2W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	封裝: PowerPAK? SO-8	庫存100,104
SQD50P04-13L_GE3	Vishay Siliconix	MOSFET P-CH 40V 50A FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3590pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封裝: TO-252-3, DPak (2 Leads + Tab), SC-63	庫存4,720
SQJ411EP-T1_GE3	Vishay Siliconix	MOSFET P-CH 12V 60A SO8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 9100pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 15A, 4.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	封裝: PowerPAK? SO-8	庫存3,024
SI3469DV-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 5A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.14W (Ta) Rds On (Max) @ Id, Vgs: 30 mOhm @ 6.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	封裝: SOT-23-6 Thin, TSOT-23-6	庫存416,340
SQJ860EP-T1_GE3	Vishay Siliconix	MOSFET N-CH 40V 60A SO8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	封裝: PowerPAK? SO-8	庫存3,328
SIHF30N60E-GE3	Vishay Siliconix	MOSFET N-CH 600V 29A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 125 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	封裝: TO-220-3 Full Pack	庫存14,526
SIS436DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 25V 16A PPAK 1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 855pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 27.7W (Tc) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	封裝: PowerPAK? 1212-8	庫存36,000
SI7948DP-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 60V 3A PPAK SO-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 75 mOhm @ 4.6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	封裝: PowerPAK? SO-8 Dual	庫存2,880
SIP21123DR-T1-E3	Vishay Siliconix	IC REG LINEAR SC70-5 Output Configuration: - Output Type: - Number of Regulators: - Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: - Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: SC-70-5	封裝: 5-TSSOP, SC-70-5, SOT-353	庫存796,248
SIP21107DR-18-E3	Vishay Siliconix	IC REG LINEAR 1.8V 150MA SC70-5 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 6V Voltage - Output (Min/Fixed): 1.8V Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 150mA Current - Quiescent (Iq): - Current - Supply (Max): 85µA PSRR: 72dB ~ 38dB (1kHz ~ 100kHz) Control Features: Enable, Power Good Protection Features: Over Temperature, Short Circuit Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: SC-70-5	封裝: 5-TSSOP, SC-70-5, SOT-353	庫存3,472
SIP32451DB-T2-GE1	Vishay Siliconix	IC SWITCH HIGH SIDE N-CH WCSP4 Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: N-Channel Interface: On/Off Voltage - Load: 0.9 V ~ 2.5 V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.2A Rds On (Typ): 54 mOhm Input Type: Non-Inverting Features: Load Discharge Fault Protection: Reverse Current Operating Temperature: -40°C ~ 125°C (TJ) Package / Case: 4-UFBGA, CSPBGA Supplier Device Package: 4-WCSP (0.79x0.79)	封裝: 4-UFBGA, CSPBGA	庫存2,848
SIP32467DB-T2-GE1	Vishay Siliconix	LOAD SWITCH 4WCSP Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: N-Channel Interface: On/Off Voltage - Load: 1.2 V ~ 5.5 V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.2A Rds On (Typ): 50 mOhm Input Type: Non-Inverting Features: Slew Rate Controlled Fault Protection: Reverse Current Operating Temperature: -40°C ~ 125°C (TJ) Package / Case: 4-UFBGA, WLCSP Supplier Device Package: 4-WLCSP (0.76x0.76)	封裝: 4-UFBGA, WLCSP	庫存7,312
SJM304BCC01	Vishay Siliconix	IC ANALOG SWITCH Switch Circuit: - Multiplexer/Demultiplexer Circuit: - Number of Circuits: - On-State Resistance (Max): - Channel-to-Channel Matching (ΔRon): - Voltage - Supply, Single (V+): - Voltage - Supply, Dual (V±): - Switch Time (Ton, Toff) (Max): - -3db Bandwidth: - Charge Injection: - Channel Capacitance (CS(off), CD(off)): - Current - Leakage (IS(off)) (Max): - Crosstalk: - Operating Temperature: - Package / Case: - Supplier Device Package: -	封裝: -	庫存6,896
DG2721DN-T1-E4	Vishay Siliconix	IC SWITCH DUAL SPDT 10MINIQFN Switch Circuit: DTDT Multiplexer/Demultiplexer Circuit: 2:2 Number of Circuits: 1 On-State Resistance (Max): 7 Ohm Channel-to-Channel Matching (ΔRon): 350 mOhm Voltage - Supply, Single (V+): 3V Voltage - Supply, Dual (V±): - Switch Time (Ton, Toff) (Max): 30ns, 25ns -3db Bandwidth: 620MHz Charge Injection: 0.5pC Channel Capacitance (CS(off), CD(off)): 4pF Current - Leakage (IS(off)) (Max): 100nA Crosstalk: -49dB @ 240MHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 10-UFQFN Supplier Device Package: 10-miniQFN (1.4x1.8)	封裝: 10-UFQFN	庫存4,624
DG2612DX-T1-E3	Vishay Siliconix	IC SWITCH LV SPST SC89-6 Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Circuits: 1 On-State Resistance (Max): 1.4 Ohm Channel-to-Channel Matching (ΔRon): 100 mOhm (Max) Voltage - Supply, Single (V+): 1.8 V ~ 5.5 V Voltage - Supply, Dual (V±): - Switch Time (Ton, Toff) (Max): 60ns, 35ns -3db Bandwidth: - Charge Injection: 2.4pC Channel Capacitance (CS(off), CD(off)): 36pF Current - Leakage (IS(off)) (Max): 2nA Crosstalk: -73dB @ 100kHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89	封裝: SOT-563, SOT-666	庫存2,544
DG212BDJ-E3	Vishay Siliconix	IC SWITCH QUAD SPST 16DIP Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 4 On-State Resistance (Max): 85 Ohm Channel-to-Channel Matching (ΔRon): 2 Ohm Voltage - Supply, Single (V+): 4.5 V ~ 25 V Voltage - Supply, Dual (V±): ±4.5 V ~ 22 V Switch Time (Ton, Toff) (Max): 300ns, 200ns -3db Bandwidth: - Charge Injection: 1pC Channel Capacitance (CS(off), CD(off)): 5pF, 5pF Current - Leakage (IS(off)) (Max): 500pA Crosstalk: -95dB @ 100kHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-PDIP	封裝: 16-DIP (0.300", 7.62mm)	庫存192,900
DG308BDY-E3	Vishay Siliconix	IC SWITCH QUAD CMOS 16SOIC Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 4 On-State Resistance (Max): 85 Ohm Channel-to-Channel Matching (ΔRon): 1.7 Ohm Voltage - Supply, Single (V+): 4 V ~ 44 V Voltage - Supply, Dual (V±): ±4 V ~ 22 V Switch Time (Ton, Toff) (Max): 200ns, 150ns -3db Bandwidth: - Charge Injection: 1pC Channel Capacitance (CS(off), CD(off)): 5pF, 5pF Current - Leakage (IS(off)) (Max): 500pA Crosstalk: -95dB @ 100kHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	封裝: 16-SOIC (0.154", 3.90mm Width)	庫存11,052
SI4953ADY-T1-E3	Vishay Siliconix	MOSFET 2P-CH 30V 3.7A 8-SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.7A Rds On (Max) @ Id, Vgs: 53mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: -	Request a Quote
SIHF35N60EF-GE3	Vishay Siliconix	MOSFET N-CH 600V 32A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 97mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	封裝: -	Request a Quote
SI2307BDS-T1-BE3	Vishay Siliconix	P-CHANNEL 30-V (D-S) MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 750mW (Ta) Rds On (Max) @ Id, Vgs: 78mOhm @ 3.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	封裝: -	庫存10,230
SQM120N10-09_GE3	Vishay Siliconix	MOSFET N-CH 100V 120A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8645 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封裝: -	Request a Quote
SIC654CD-T1-GE3	Vishay Siliconix	IC HALF BRIDGE DRIVER 50A PPAK Output Configuration: Half Bridge Applications: General Purpose Interface: Logic, PWM Load Type: Inductive, Capacitive, Resistive Technology: Power MOSFET Rds On (Typ): - Current - Output / Channel: 50A Current - Peak Output: 100A Voltage - Supply: 4.5V ~ 5.5V Voltage - Load: 24V Operating Temperature: -40°C ~ 150°C (TJ) Features: Bootstrap Circuit, Diode Emulation Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO Mounting Type: Surface Mount Package / Case: PowerPAK® MLP55-31L Supplier Device Package: PowerPAK® MLP55-31L	封裝: -	庫存771
SQR100N04-3M8R_GE3	Vishay Siliconix	N-CHANNEL 40-V (D-S) 175C MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	Request a Quote

IRL3303D1STRR

Vishay Siliconix

MOSFET N-CH 30V 38A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存6,128

SI7880ADP-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 40A PPAK SO-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? SO-8
Package / Case: PowerPAK? SO-8

封裝: PowerPAK? SO-8

庫存38,388

SQM40N15-38_GE3

Vishay Siliconix

MOSFET N-CH 150V 40A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3390pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 166W (Tc)
Rds On (Max) @ Id, Vgs: 38 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存7,088

SI5853DDC-T1-E3

Vishay Siliconix

MOSFET P-CH 20V 4A 1206-8

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
Vgs (Max): ±8V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.3W (Ta), 3.1W (Tc)
Rds On (Max) @ Id, Vgs: 105 mOhm @ 2.9A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 1206-8 ChipFET?
Package / Case: 8-SMD, Flat Lead

封裝: 8-SMD, Flat Lead

庫存1,627,944

SI7858BDP-T1-GE3

Vishay Siliconix

MOSFET N-CH 12V 40A PPAK SO-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 84nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 5760pF @ 6V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 15A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? SO-8
Package / Case: PowerPAK? SO-8

封裝: PowerPAK? SO-8

庫存4,912

SI7149DP-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 50A PPAK SO-8

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 147nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4590pF @ 15V
Vgs (Max): ±25V
FET Feature: -
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? SO-8
Package / Case: PowerPAK? SO-8

封裝: PowerPAK? SO-8

庫存100,104

SQD50P04-13L_GE3

Vishay Siliconix

MOSFET P-CH 40V 50A

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3590pF @ 20V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 13 mOhm @ 17A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存4,720

SQJ411EP-T1_GE3

Vishay Siliconix

MOSFET P-CH 12V 60A SO8

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 9100pF @ 6V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 15A, 4.5V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? SO-8
Package / Case: PowerPAK? SO-8

封裝: PowerPAK? SO-8

庫存3,024

SI3469DV-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 5A 6-TSOP

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.14W (Ta)
Rds On (Max) @ Id, Vgs: 30 mOhm @ 6.7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6

封裝: SOT-23-6 Thin, TSOT-23-6

庫存416,340

SQJ860EP-T1_GE3

Vishay Siliconix

MOSFET N-CH 40V 60A SO8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 6 mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? SO-8
Package / Case: PowerPAK? SO-8

封裝: PowerPAK? SO-8

庫存3,328

SIHF30N60E-GE3

Vishay Siliconix

MOSFET N-CH 600V 29A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 100V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 37W (Tc)
Rds On (Max) @ Id, Vgs: 125 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220 Full Pack
Package / Case: TO-220-3 Full Pack

封裝: TO-220-3 Full Pack

庫存14,526

SIS436DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 25V 16A PPAK 1212-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 855pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.5W (Ta), 27.7W (Tc)
Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? 1212-8
Package / Case: PowerPAK? 1212-8

封裝: PowerPAK? 1212-8

庫存36,000

SI7948DP-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 60V 3A PPAK SO-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 75 mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

封裝: PowerPAK? SO-8 Dual

庫存2,880

SIP21123DR-T1-E3

Vishay Siliconix

IC REG LINEAR SC70-5

Output Configuration: -
Output Type: -
Number of Regulators: -
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: -
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: SC-70-5

封裝: 5-TSSOP, SC-70-5, SOT-353

庫存796,248

SIP21107DR-18-E3

Vishay Siliconix

IC REG LINEAR 1.8V 150MA SC70-5

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 6V
Voltage - Output (Min/Fixed): 1.8V
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 150mA
Current - Quiescent (Iq): -
Current - Supply (Max): 85µA
PSRR: 72dB ~ 38dB (1kHz ~ 100kHz)
Control Features: Enable, Power Good
Protection Features: Over Temperature, Short Circuit
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: SC-70-5

封裝: 5-TSSOP, SC-70-5, SOT-353

庫存3,472

SIP32451DB-T2-GE1

Vishay Siliconix

IC SWITCH HIGH SIDE N-CH WCSP4

Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 0.9 V ~ 2.5 V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Rds On (Typ): 54 mOhm
Input Type: Non-Inverting
Features: Load Discharge
Fault Protection: Reverse Current
Operating Temperature: -40°C ~ 125°C (TJ)
Package / Case: 4-UFBGA, CSPBGA
Supplier Device Package: 4-WCSP (0.79x0.79)

封裝: 4-UFBGA, CSPBGA

庫存2,848

SIP32467DB-T2-GE1

Vishay Siliconix

LOAD SWITCH 4WCSP

Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 1.2 V ~ 5.5 V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Rds On (Typ): 50 mOhm
Input Type: Non-Inverting
Features: Slew Rate Controlled
Fault Protection: Reverse Current
Operating Temperature: -40°C ~ 125°C (TJ)
Package / Case: 4-UFBGA, WLCSP
Supplier Device Package: 4-WLCSP (0.76x0.76)

封裝: 4-UFBGA, WLCSP

庫存7,312

SJM304BCC01

Vishay Siliconix

IC ANALOG SWITCH

Switch Circuit: -
Multiplexer/Demultiplexer Circuit: -
Number of Circuits: -
On-State Resistance (Max): -
Channel-to-Channel Matching (ΔRon): -
Voltage - Supply, Single (V+): -
Voltage - Supply, Dual (V±): -
Switch Time (Ton, Toff) (Max): -
-3db Bandwidth: -
Charge Injection: -
Channel Capacitance (CS(off), CD(off)): -
Current - Leakage (IS(off)) (Max): -
Crosstalk: -
Operating Temperature: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存6,896

DG2721DN-T1-E4

Vishay Siliconix

IC SWITCH DUAL SPDT 10MINIQFN

Switch Circuit: DTDT
Multiplexer/Demultiplexer Circuit: 2:2
Number of Circuits: 1
On-State Resistance (Max): 7 Ohm
Channel-to-Channel Matching (ΔRon): 350 mOhm
Voltage - Supply, Single (V+): 3V
Voltage - Supply, Dual (V±): -
Switch Time (Ton, Toff) (Max): 30ns, 25ns
-3db Bandwidth: 620MHz
Charge Injection: 0.5pC
Channel Capacitance (CS(off), CD(off)): 4pF
Current - Leakage (IS(off)) (Max): 100nA
Crosstalk: -49dB @ 240MHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 10-UFQFN
Supplier Device Package: 10-miniQFN (1.4x1.8)

封裝: 10-UFQFN

庫存4,624

DG2612DX-T1-E3

Vishay Siliconix

IC SWITCH LV SPST SC89-6

Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Circuits: 1
On-State Resistance (Max): 1.4 Ohm
Channel-to-Channel Matching (ΔRon): 100 mOhm (Max)
Voltage - Supply, Single (V+): 1.8 V ~ 5.5 V
Voltage - Supply, Dual (V±): -
Switch Time (Ton, Toff) (Max): 60ns, 35ns
-3db Bandwidth: -
Charge Injection: 2.4pC
Channel Capacitance (CS(off), CD(off)): 36pF
Current - Leakage (IS(off)) (Max): 2nA
Crosstalk: -73dB @ 100kHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89

封裝: SOT-563, SOT-666

庫存2,544

DG212BDJ-E3

Vishay Siliconix

IC SWITCH QUAD SPST 16DIP

Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 85 Ohm
Channel-to-Channel Matching (ΔRon): 2 Ohm
Voltage - Supply, Single (V+): 4.5 V ~ 25 V
Voltage - Supply, Dual (V±): ±4.5 V ~ 22 V
Switch Time (Ton, Toff) (Max): 300ns, 200ns
-3db Bandwidth: -
Charge Injection: 1pC
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Current - Leakage (IS(off)) (Max): 500pA
Crosstalk: -95dB @ 100kHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-PDIP

封裝: 16-DIP (0.300", 7.62mm)

庫存192,900

DG308BDY-E3

Vishay Siliconix

IC SWITCH QUAD CMOS 16SOIC

Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 85 Ohm
Channel-to-Channel Matching (ΔRon): 1.7 Ohm
Voltage - Supply, Single (V+): 4 V ~ 44 V
Voltage - Supply, Dual (V±): ±4 V ~ 22 V
Switch Time (Ton, Toff) (Max): 200ns, 150ns
-3db Bandwidth: -
Charge Injection: 1pC
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Current - Leakage (IS(off)) (Max): 500pA
Crosstalk: -95dB @ 100kHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

封裝: 16-SOIC (0.154", 3.90mm Width)

庫存11,052

SI4953ADY-T1-E3

Vishay Siliconix

MOSFET 2P-CH 30V 3.7A 8-SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: -

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SIHF35N60EF-GE3

Vishay Siliconix

MOSFET N-CH 600V 32A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 100 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 97mOhm @ 17A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220 Full Pack
Package / Case: TO-220-3 Full Pack

封裝: -

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SI2307BDS-T1-BE3

Vishay Siliconix

P-CHANNEL 30-V (D-S) MOSFET

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 750mW (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 3.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3

封裝: -

庫存10,230

SQM120N10-09_GE3

Vishay Siliconix

MOSFET N-CH 100V 120A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8645 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封裝: -

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SIC654CD-T1-GE3

Vishay Siliconix

IC HALF BRIDGE DRIVER 50A PPAK

Output Configuration: Half Bridge
Applications: General Purpose
Interface: Logic, PWM
Load Type: Inductive, Capacitive, Resistive
Technology: Power MOSFET
Rds On (Typ): -
Current - Output / Channel: 50A
Current - Peak Output: 100A
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Load: 24V
Operating Temperature: -40°C ~ 150°C (TJ)
Features: Bootstrap Circuit, Diode Emulation
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Supplier Device Package: PowerPAK® MLP55-31L

封裝: -

庫存771

SQR100N04-3M8R_GE3

Vishay Siliconix

N-CHANNEL 40-V (D-S) 175C MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

Request a Quote