頁 124 - Vishay Siliconix 產品

零件編號	製造商	描述	封裝	庫存
2N4416A	Vishay Siliconix	MOSFET N-CH 35V 5MA TO-206AF FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 35V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 2.5V @ 1nA Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V Resistance - RDS(On): - Power - Max: 300mW Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-206AF (TO-72)	封裝: TO-206AF, TO-72-4 Metal Can	庫存10,236
SI4409DY-T1-E3	Vishay Siliconix	MOSFET P-CH 150V 1.3A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 332pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta), 4.6W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存375,240
SI5433BDC-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 4.8A 1206-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 37 mOhm @ 4.8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET? Package / Case: 8-SMD, Flat Lead	封裝: 8-SMD, Flat Lead	庫存72,000
SIHP14N50D-GE3	Vishay Siliconix	MOSFET N-CH 500V 14A TO-200AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1144pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	封裝: TO-220-3	庫存3,856
IRF730STRLPBF	Vishay Siliconix	MOSFET N-CH 400V 5.5A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 74W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存4,640
SI7106DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 20V 12.5A 1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 19.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	封裝: PowerPAK? 1212-8	庫存398,040
SIHB35N60E-GE3	Vishay Siliconix	MOSFET N-CH 600V 32A D2PAK TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2760pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 94 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存20,328
SIE818DF-T1-E3	Vishay Siliconix	MOSFET N-CH 75V 60A 10-POLARPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 38V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.2W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PolarPAK? (L) Package / Case: 10-PolarPAK? (L)	封裝: 10-PolarPAK? (L)	庫存48,408
SI5511DC-T1-E3	Vishay Siliconix	MOSFET N/P-CH 30V 4A 1206-8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A, 3.6A Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.8A, 4.5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V Power - Max: 3.1W, 2.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET?	封裝: 8-SMD, Flat Lead	庫存108,000
SIZ700DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 16A PPAK 1212-8 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 16A Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V Power - Max: 2.36W, 2.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerPair? Supplier Device Package: 6-PowerPair?	封裝: 6-PowerPair?	庫存2,414,892
SI1033X-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 0.145A SC89 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 145mA Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	封裝: SOT-563, SOT-666	庫存36,600
SISB46DN-T1-GE3	Vishay Siliconix	MOSFET ARRAY 2N-CH 40V 1212-8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 11.71 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 20V Power - Max: 23W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 1212-8 Dual Supplier Device Package: PowerPAK? 1212-8 Dual	封裝: PowerPAK? 1212-8 Dual	庫存22,164
SIP21106DVP-33-E3	Vishay Siliconix	IC REG LINEAR 3.3V 150MA TSC75-6 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 6V Voltage - Output (Min/Fixed): 3.3V Voltage - Output (Max): - Voltage Dropout (Max): 0.22V @ 150mA Current - Output: 150mA Current - Quiescent (Iq): - Current - Supply (Max): 85µA PSRR: 75dB ~ 40dB (1kHz ~ 100kHz) Control Features: Enable Protection Features: Over Temperature, Short Circuit Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: PowerPAK? TSC-75-6 Supplier Device Package: PowerPAK? TSC75-6	封裝: PowerPAK? TSC-75-6	庫存6,944
SIP21106DR-28-E3	Vishay Siliconix	IC REG LINEAR 2.8V 150MA SC70-5 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 6V Voltage - Output (Min/Fixed): 2.8V Voltage - Output (Max): - Voltage Dropout (Max): 0.22V @ 150mA Current - Output: 150mA Current - Quiescent (Iq): - Current - Supply (Max): 85µA PSRR: 75dB ~ 40dB (1kHz ~ 100kHz) Control Features: Enable Protection Features: Over Temperature, Short Circuit Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: SC-70-5	封裝: 5-TSSOP, SC-70-5, SOT-353	庫存675,552
SIC533CD-T1-GE3	Vishay Siliconix	IC POWER STAGE 35A POWERPAK MLP4 Output Configuration: Half Bridge Applications: Synchronous Buck Converters Interface: PWM Load Type: Inductive Technology: Power MOSFET Rds On (Typ): - Current - Output / Channel: 35A Current - Peak Output: 40A Voltage - Supply: 4.5 V ~ 5.5 V Voltage - Load: 4.5 V ~ 24 V Operating Temperature: -40°C ~ 150°C (TJ) Features: Bootstrap Circuit, Diode Emulation Fault Protection: UVLO Mounting Type: Surface Mount Package / Case: PowerPAK? MLP4535-22L Supplier Device Package: POWERPAK? MLP4535-22L	封裝: PowerPAK? MLP4535-22L	庫存25,074
DG441DY	Vishay Siliconix	IC SWITCH QUAD SPST 16SOIC Switch Circuit: SPST - NC Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 4 On-State Resistance (Max): 85 Ohm Channel-to-Channel Matching (ΔRon): 4 Ohm (Max) Voltage - Supply, Single (V+): 12V Voltage - Supply, Dual (V±): ±15V Switch Time (Ton, Toff) (Max): 220ns, 120ns -3db Bandwidth: - Charge Injection: -1pC Channel Capacitance (CS(off), CD(off)): 4pF, 4pF Current - Leakage (IS(off)) (Max): 500pA Crosstalk: -100dB @ 1MHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	封裝: 16-SOIC (0.154", 3.90mm Width)	庫存540,408
DG445DY-E3	Vishay Siliconix	IC SWITCH QUAD SPST 16SOIC Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 4 On-State Resistance (Max): 85 Ohm Channel-to-Channel Matching (ΔRon): - Voltage - Supply, Single (V+): 5 V ~ 36 V Voltage - Supply, Dual (V±): ±5 V ~ 20 V Switch Time (Ton, Toff) (Max): 250ns, 210ns -3db Bandwidth: - Charge Injection: -1pC Channel Capacitance (CS(off), CD(off)): 4pF, 4pF Current - Leakage (IS(off)) (Max): 500pA Crosstalk: -100dB @ 1MHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	封裝: 16-SOIC (0.154", 3.90mm Width)	庫存7,428
DG211BDQ-T1-E3	Vishay Siliconix	IC SWITCH QUAD SPST 16TSSOP Switch Circuit: SPST - NC Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 4 On-State Resistance (Max): 85 Ohm Channel-to-Channel Matching (ΔRon): 2 Ohm Voltage - Supply, Single (V+): 4.5 V ~ 25 V Voltage - Supply, Dual (V±): ±4.5 V ~ 22 V Switch Time (Ton, Toff) (Max): 300ns, 200ns -3db Bandwidth: - Charge Injection: 1pC Channel Capacitance (CS(off), CD(off)): 5pF, 5pF Current - Leakage (IS(off)) (Max): 500pA Crosstalk: -95dB @ 100kHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 16-TSSOP	封裝: 16-TSSOP (0.173", 4.40mm Width)	庫存36,300
DG538ADN-T1-E3	Vishay Siliconix	IC AMP/VIDEO/MUX LP 4/8CH 28PLCC Applications: Ultrasound, Video Multiplexer/Demultiplexer Circuit: 4:1 Switch Circuit: - Number of Channels: 2 On-State Resistance (Max): 90 Ohm Voltage - Supply, Single (V+): 10 V ~ 21 V Voltage - Supply, Dual (V±): - -3db Bandwidth: 500MHz Features: T-Switch Configuration Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 28-LCC (J-Lead) Supplier Device Package: 28-PLCC (11.51x11.51)	封裝: 28-LCC (J-Lead)	庫存7,200
SIC438AED-T1-GE3	Vishay Siliconix	MICROBUCK POWERSAVE Function: Step-Down Output Configuration: Positive Topology: Buck Output Type: Adjustable Number of Outputs: 1 Voltage - Input (Min): 3V Voltage - Input (Max): 28V Voltage - Output (Min/Fixed): 0.6V Voltage - Output (Max): 20V Current - Output: 8A Frequency - Switching: 300kHz ~ 1MHz Synchronous Rectifier: Yes Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 24-PowerWFQFN Supplier Device Package: PowerPAK® MLP44-24	封裝: 24-PowerWFQFN	庫存7,808
SIR880BDP-T1-RE3	Vishay Siliconix	N-CHANNEL 80-V (D-S) MOSFET POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 18.6A (Ta), 70.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 71.4W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	封裝: -	庫存2,367
SISA26DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 25V 60A PPAK1212-8S FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2247 pF @ 10 V Vgs (Max): +16V, -12V FET Feature: - Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 2.65mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8	封裝: -	庫存17,046
SI3464DV-T1-BE3	Vishay Siliconix	N-CHANNEL 20-V (D-S) MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1065 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2W (Ta), 3.6W (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	封裝: -	庫存19,764
SQS140ENW-T1_GE3	Vishay Siliconix	AUTOMOTIVE N-CHANNEL 40 V (D-S) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 214A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3111 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 197W (Tc) Rds On (Max) @ Id, Vgs: 2.53mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerPAK® 1212-8SLW Package / Case: PowerPAK® 1212-8SLW	封裝: -	庫存4,470
SI4946CDY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 60V 5.2A/6.1A 8SO FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 6.1A (Tc) Rds On (Max) @ Id, Vgs: 40.9mOhm @ 5.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V Power - Max: 2W (Ta), 2.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: -	Request a Quote
SQ1902AEL-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 20V 0.78A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 780mA (Tc) Rds On (Max) @ Id, Vgs: 415mOhm @ 660mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V Power - Max: 430mW Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SC-70-6 Dual Supplier Device Package: PowerPAK® SC-70-6 Dual	封裝: -	Request a Quote
SQJ160EP-T1_GE3	Vishay Siliconix	AUTOMOTIVE N-CHANNEL 60 V (D-S) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 362A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6697 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	封裝: -	Request a Quote
SI4434ADY-T1-GE3	Vishay Siliconix	MOSFET N-CH 250V 2.8A/4.1A 8SO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 4.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 125 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.9W (Ta), 6W (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	封裝: -	庫存29,520

2N4416A

Vishay Siliconix

MOSFET N-CH 35V 5MA TO-206AF

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 2.5V @ 1nA
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
Resistance - RDS(On): -
Power - Max: 300mW
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Supplier Device Package: TO-206AF (TO-72)

封裝: TO-206AF, TO-72-4 Metal Can

庫存10,236

SI4409DY-T1-E3

Vishay Siliconix

MOSFET P-CH 150V 1.3A 8-SOIC

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 332pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.2W (Ta), 4.6W (Tc)
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存375,240

SI5433BDC-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 4.8A 1206-8

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 37 mOhm @ 4.8A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 1206-8 ChipFET?
Package / Case: 8-SMD, Flat Lead

封裝: 8-SMD, Flat Lead

庫存72,000

SIHP14N50D-GE3

Vishay Siliconix

MOSFET N-CH 500V 14A TO-200AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1144pF @ 100V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 400 mOhm @ 7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封裝: TO-220-3

庫存3,856

IRF730STRLPBF

Vishay Siliconix

MOSFET N-CH 400V 5.5A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 400V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存4,640

SI7106DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 12.5A 1212-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 19.5A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? 1212-8
Package / Case: PowerPAK? 1212-8

封裝: PowerPAK? 1212-8

庫存398,040

SIHB35N60E-GE3

Vishay Siliconix

MOSFET N-CH 600V 32A D2PAK TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2760pF @ 100V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 94 mOhm @ 17A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK (TO-263)
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存20,328

SIE818DF-T1-E3

Vishay Siliconix

MOSFET N-CH 75V 60A 10-POLARPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 38V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 16A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 10-PolarPAK? (L)
Package / Case: 10-PolarPAK? (L)

封裝: 10-PolarPAK? (L)

庫存48,408

SI5511DC-T1-E3

Vishay Siliconix

MOSFET N/P-CH 30V 4A 1206-8

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.6A
Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.8A, 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Power - Max: 3.1W, 2.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET?

封裝: 8-SMD, Flat Lead

庫存108,000

SIZ700DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 16A PPAK 1212-8

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 16A
Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V
Power - Max: 2.36W, 2.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerPair?
Supplier Device Package: 6-PowerPair?

封裝: 6-PowerPair?

庫存2,414,892

SI1033X-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 20V 0.145A SC89

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 145mA
Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6

封裝: SOT-563, SOT-666

庫存36,600

SISB46DN-T1-GE3

Vishay Siliconix

MOSFET ARRAY 2N-CH 40V 1212-8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 11.71 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 20V
Power - Max: 23W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 1212-8 Dual
Supplier Device Package: PowerPAK? 1212-8 Dual

封裝: PowerPAK? 1212-8 Dual

庫存22,164

SIP21106DVP-33-E3

Vishay Siliconix

IC REG LINEAR 3.3V 150MA TSC75-6

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 6V
Voltage - Output (Min/Fixed): 3.3V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.22V @ 150mA
Current - Output: 150mA
Current - Quiescent (Iq): -
Current - Supply (Max): 85µA
PSRR: 75dB ~ 40dB (1kHz ~ 100kHz)
Control Features: Enable
Protection Features: Over Temperature, Short Circuit
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: PowerPAK? TSC-75-6
Supplier Device Package: PowerPAK? TSC75-6

封裝: PowerPAK? TSC-75-6

庫存6,944

SIP21106DR-28-E3

Vishay Siliconix

IC REG LINEAR 2.8V 150MA SC70-5

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 6V
Voltage - Output (Min/Fixed): 2.8V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.22V @ 150mA
Current - Output: 150mA
Current - Quiescent (Iq): -
Current - Supply (Max): 85µA
PSRR: 75dB ~ 40dB (1kHz ~ 100kHz)
Control Features: Enable
Protection Features: Over Temperature, Short Circuit
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: SC-70-5

封裝: 5-TSSOP, SC-70-5, SOT-353

庫存675,552

SIC533CD-T1-GE3

Vishay Siliconix

IC POWER STAGE 35A POWERPAK MLP4

Output Configuration: Half Bridge
Applications: Synchronous Buck Converters
Interface: PWM
Load Type: Inductive
Technology: Power MOSFET
Rds On (Typ): -
Current - Output / Channel: 35A
Current - Peak Output: 40A
Voltage - Supply: 4.5 V ~ 5.5 V
Voltage - Load: 4.5 V ~ 24 V
Operating Temperature: -40°C ~ 150°C (TJ)
Features: Bootstrap Circuit, Diode Emulation
Fault Protection: UVLO
Mounting Type: Surface Mount
Package / Case: PowerPAK? MLP4535-22L
Supplier Device Package: POWERPAK? MLP4535-22L

封裝: PowerPAK? MLP4535-22L

庫存25,074

DG441DY

Vishay Siliconix

IC SWITCH QUAD SPST 16SOIC

Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 85 Ohm
Channel-to-Channel Matching (ΔRon): 4 Ohm (Max)
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±15V
Switch Time (Ton, Toff) (Max): 220ns, 120ns
-3db Bandwidth: -
Charge Injection: -1pC
Channel Capacitance (CS(off), CD(off)): 4pF, 4pF
Current - Leakage (IS(off)) (Max): 500pA
Crosstalk: -100dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

封裝: 16-SOIC (0.154", 3.90mm Width)

庫存540,408

DG445DY-E3

Vishay Siliconix

IC SWITCH QUAD SPST 16SOIC

Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 85 Ohm
Channel-to-Channel Matching (ΔRon): -
Voltage - Supply, Single (V+): 5 V ~ 36 V
Voltage - Supply, Dual (V±): ±5 V ~ 20 V
Switch Time (Ton, Toff) (Max): 250ns, 210ns
-3db Bandwidth: -
Charge Injection: -1pC
Channel Capacitance (CS(off), CD(off)): 4pF, 4pF
Current - Leakage (IS(off)) (Max): 500pA
Crosstalk: -100dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

封裝: 16-SOIC (0.154", 3.90mm Width)

庫存7,428

DG211BDQ-T1-E3

Vishay Siliconix

IC SWITCH QUAD SPST 16TSSOP

Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 85 Ohm
Channel-to-Channel Matching (ΔRon): 2 Ohm
Voltage - Supply, Single (V+): 4.5 V ~ 25 V
Voltage - Supply, Dual (V±): ±4.5 V ~ 22 V
Switch Time (Ton, Toff) (Max): 300ns, 200ns
-3db Bandwidth: -
Charge Injection: 1pC
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Current - Leakage (IS(off)) (Max): 500pA
Crosstalk: -95dB @ 100kHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 16-TSSOP

封裝: 16-TSSOP (0.173", 4.40mm Width)

庫存36,300

DG538ADN-T1-E3

Vishay Siliconix

IC AMP/VIDEO/MUX LP 4/8CH 28PLCC

Applications: Ultrasound, Video
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: -
Number of Channels: 2
On-State Resistance (Max): 90 Ohm
Voltage - Supply, Single (V+): 10 V ~ 21 V
Voltage - Supply, Dual (V±): -
-3db Bandwidth: 500MHz
Features: T-Switch Configuration
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 28-LCC (J-Lead)
Supplier Device Package: 28-PLCC (11.51x11.51)

封裝: 28-LCC (J-Lead)

庫存7,200

SIC438AED-T1-GE3

Vishay Siliconix

MICROBUCK POWERSAVE

Function: Step-Down
Output Configuration: Positive
Topology: Buck
Output Type: Adjustable
Number of Outputs: 1
Voltage - Input (Min): 3V
Voltage - Input (Max): 28V
Voltage - Output (Min/Fixed): 0.6V
Voltage - Output (Max): 20V
Current - Output: 8A
Frequency - Switching: 300kHz ~ 1MHz
Synchronous Rectifier: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-PowerWFQFN
Supplier Device Package: PowerPAK® MLP44-24

封裝: 24-PowerWFQFN

庫存7,808

SIR880BDP-T1-RE3

Vishay Siliconix

N-CHANNEL 80-V (D-S) MOSFET POWE

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 18.6A (Ta), 70.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 5W (Ta), 71.4W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8

封裝: -

庫存2,367

SISA26DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 25V 60A PPAK1212-8S

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2247 pF @ 10 V
Vgs (Max): +16V, -12V
FET Feature: -
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8

封裝: -

庫存17,046

SI3464DV-T1-BE3

Vishay Siliconix

N-CHANNEL 20-V (D-S) MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1065 pF @ 10 V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6

封裝: -

庫存19,764

SQS140ENW-T1_GE3

Vishay Siliconix

AUTOMOTIVE N-CHANNEL 40 V (D-S)

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 214A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3111 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 197W (Tc)
Rds On (Max) @ Id, Vgs: 2.53mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Supplier Device Package: PowerPAK® 1212-8SLW
Package / Case: PowerPAK® 1212-8SLW

封裝: -

庫存4,470

SI4946CDY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 60V 5.2A/6.1A 8SO

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 40.9mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V
Power - Max: 2W (Ta), 2.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: -

Request a Quote

SQ1902AEL-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 20V 0.78A SC70-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 780mA (Tc)
Rds On (Max) @ Id, Vgs: 415mOhm @ 660mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
Power - Max: 430mW
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Supplier Device Package: PowerPAK® SC-70-6 Dual

封裝: -

Request a Quote

SQJ160EP-T1_GE3

Vishay Siliconix

AUTOMOTIVE N-CHANNEL 60 V (D-S)

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 362A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6697 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8

封裝: -

Request a Quote

SI4434ADY-T1-GE3

Vishay Siliconix

MOSFET N-CH 250V 2.8A/4.1A 8SO

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 125 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.9W (Ta), 6W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封裝: -

庫存29,520