頁 5 - Vishay Siliconix 產品 - 電晶體 - FET、MOSFET - 陣列

零件編號	製造商	描述	封裝	庫存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
SIZF5300DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 35A PWRPAIR FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 125A (Tc) Rds On (Max) @ Id, Vgs: 2.43mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 15V Power - Max: 4.5W (Ta), 56.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 12-PowerPair™ Supplier Device Package: PowerPAIR® 3x3FS	封裝: -	庫存16,227	-	30V	35A (Ta), 125A (Tc)	2.43mOhm @ 10A, 10V	2V @ 250µA	32nC @ 10V	1480pF @ 15V	4.5W (Ta), 56.8W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	12-PowerPair™	PowerPAIR® 3x3FS
SI7844DP-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 6.4A PPAK SO-8 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.4A Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: - Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	封裝: -	Request a Quote	Logic Level Gate	30V	6.4A	22mOhm @ 10A, 10V	2.4V @ 250µA	20nC @ 10V	-	1.4W	-	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
SQJ910AEP-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 30V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1869pF @ 15V Power - Max: 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	封裝: -	庫存8,910	-	30V	30A (Tc)	7mOhm @ 12A, 10V	2.5V @ 250µA	39nC @ 10V	1869pF @ 15V	48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
SQJ910AEP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 30V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1869pF @ 15V Power - Max: 48W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	封裝: -	Request a Quote	-	30V	30A (Tc)	7mOhm @ 12A, 10V	2.5V @ 250µA	39nC @ 10V	1869pF @ 15V	48W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
SQJB80EP-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 80V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Power - Max: 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	封裝: -	庫存8,820	-	80V	30A (Tc)	19mOhm @ 8A, 10V	2.5V @ 250µA	32nC @ 10V	1400pF @ 25V	48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
SQ4282EY-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 30V 8A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 12.3mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2367pF @ 15V Power - Max: 3.9W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: -	庫存7,488	-	30V	8A (Tc)	12.3mOhm @ 15A, 10V	2.5V @ 250µA	47nC @ 10V	2367pF @ 15V	3.9W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SQ4282EY-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 30V 8A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 12.3mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2367pF @ 15V Power - Max: 3.9W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: -	庫存6,255	-	30V	8A (Tc)	12.3mOhm @ 15A, 10V	2.5V @ 250µA	47nC @ 10V	2367pF @ 15V	3.9W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SI7223DN-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 30V 6A PPAK 1212 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 26.4mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1425pF @ 15V Power - Max: 2.6W (Ta), 23W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Dual Supplier Device Package: PowerPAK® 1212-8 Dual	封裝: -	庫存24,579	-	30V	6A (Tc)	26.4mOhm @ 8A, 10V	2.5V @ 250µA	40nC @ 10V	1425pF @ 15V	2.6W (Ta), 23W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8 Dual	PowerPAK® 1212-8 Dual
SIA922EDJ-T4-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 4.4A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 4.5A (Tc) Rds On (Max) @ Id, Vgs: 64mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.9W (Ta), 7.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SC-70-6 Dual Supplier Device Package: PowerPAK® SC-70-6 Dual	封裝: -	Request a Quote	-	30V	4.4A (Ta), 4.5A (Tc)	64mOhm @ 3A, 4.5V	1.4V @ 250µA	12nC @ 10V	-	1.9W (Ta), 7.8W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SC-70-6 Dual	PowerPAK® SC-70-6 Dual
SQJB04ELP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 40V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 25V Power - Max: 27W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	封裝: -	庫存70,419	-	40V	30A (Tc)	11mOhm @ 5A, 10V	2.2V @ 250µA	20nC @ 10V	1055pF @ 25V	27W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
SQJ942EP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 40V 15A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 45A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 7.8A, 10V, 11mOhm @ 10.1A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.7nC @ 10V, 33.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 809pF @ 20V, 1451pF @ 20V Power - Max: 17W, 48W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8	封裝: -	庫存9,000	-	40V	15A (Tc), 45A (Tc)	22mOhm @ 7.8A, 10V, 11mOhm @ 10.1A, 10V	2.3V @ 250µA	19.7nC @ 10V, 33.8nC @ 10V	809pF @ 20V, 1451pF @ 20V	17W, 48W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SIA938DJT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 4.5A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 4.5A (Tc) Rds On (Max) @ Id, Vgs: 21.5mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 10V Power - Max: 1.9W (Ta), 7.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SC-70-6 Dual Supplier Device Package: PowerPAK® SC-70-6 Dual	封裝: -	庫存35,379	-	20V	4.5A (Ta), 4.5A (Tc)	21.5mOhm @ 5A, 10V	1.5V @ 250µA	11.5nC @ 10V	425pF @ 10V	1.9W (Ta), 7.8W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SC-70-6 Dual	PowerPAK® SC-70-6 Dual
SQJ500AEP-T1_BE3	Vishay Siliconix	MOSFET N/P-CH 40V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 9.2mOhm @ 9.8A, 10V, 27mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38.3nC @ 10V, 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1843pF @ 20V, 1628pF @ 20V Power - Max: 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8	封裝: -	庫存17,814	-	40V	30A (Tc)	9.2mOhm @ 9.8A, 10V, 27mOhm @ 6A, 10V	2.3V @ 250µA, 2.5V @ 250µA	38.3nC @ 10V, 45nC @ 10V	1843pF @ 20V, 1628pF @ 20V	48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SQJ202EP-T2_GE3	Vishay Siliconix	MOSFET 2N-CH 12V 20A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V, 3.3mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V, 2525pF @ 6V Power - Max: 27W (Tc), 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric	封裝: -	庫存27,000	-	12V	20A (Tc), 60A (Tc)	6.5mOhm @ 15A, 10V, 3.3mOhm @ 20A, 10V	2V @ 250µA	22nC @ 10V, 54nC @ 10V	975pF @ 6V, 2525pF @ 6V	27W (Tc), 48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual Asymmetric
SI4511DY-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 20V 7.2A 8-SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.2A, 4.6A Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.6A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: -	Request a Quote	Logic Level Gate	20V	7.2A, 4.6A	14.5mOhm @ 9.6A, 10V	1.8V @ 250µA	18nC @ 4.5V	-	1.1W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SQJ264EP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 60V 20A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 54A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V, 8.6mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V, 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V, 2100pF @ 25V Power - Max: 27W (Tc), 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric	封裝: -	庫存17,100	-	60V	20A (Tc), 54A (Tc)	20mOhm @ 6A, 10V, 8.6mOhm @ 10A, 10V	3.5V @ 250µA	16nC @ 10V, 32nC @ 10V	1000pF @ 25V, 2100pF @ 25V	27W (Tc), 48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual Asymmetric
SQJ974EP-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 100V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V Power - Max: 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	封裝: -	庫存18,000	-	100V	30A (Tc)	25.5mOhm @ 10A, 10V	2.5V @ 250µA	30nC @ 10V	1050pF @ 25V	48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
SI1900DL-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 0.63A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 630mA (Ta), 590mA (Ta) Rds On (Max) @ Id, Vgs: 480mOhm @ 590mA, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 300mW, 270mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	封裝: -	庫存9,000	-	30V	630mA (Ta), 590mA (Ta)	480mOhm @ 590mA, 10V	3V @ 250µA	1.4nC @ 10V	-	300mW, 270mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
SQJB68EP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 100V 11A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V Power - Max: 27W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	封裝: -	庫存51,204	-	100V	11A (Tc)	92mOhm @ 4A, 10V	2.5V @ 250µA	8nC @ 10V	280pF @ 25V	27W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
SQJB68EP-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 100V 11A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V Power - Max: 27W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	封裝: -	庫存53,844	-	100V	11A (Tc)	92mOhm @ 4A, 10V	2.5V @ 250µA	8nC @ 10V	280pF @ 25V	27W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
SISF02DN-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 25V 30.5A/60A PPAK FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 30.5A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 10V Power - Max: 5.2W (Ta), 69.4W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8SCD Supplier Device Package: PowerPAK® 1212-8SCD	封裝: -	庫存72	-	25V	30.5A (Ta), 60A (Tc)	3.5mOhm @ 7A, 10V	2.3V @ 250µA	56nC @ 10V	2650pF @ 10V	5.2W (Ta), 69.4W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8SCD	PowerPAK® 1212-8SCD
SI8902AEDB-T2-E1	Vishay Siliconix	MOSFET 2N-CH 24V 11A 6MICRO FOOT FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 11A Rds On (Max) @ Id, Vgs: 28mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 5.7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFBGA Supplier Device Package: 6-Micro Foot™ (1.5x1)	封裝: -	Request a Quote	-	24V	11A	28mOhm @ 1A, 4.5V	900mV @ 250µA	-	-	5.7W	-55°C ~ 150°C (TJ)	Surface Mount	6-UFBGA	6-Micro Foot™ (1.5x1)
SQ1539EH-T1_GE3	Vishay Siliconix	MOSFET N/P-CH 30V 0.85A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 850mA (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 1A, 10V, 940mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V, 1.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 15V, 50pF @ 15V Power - Max: 1.5W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SC-70-6 Dual Supplier Device Package: PowerPAK® SC-70-6 Dual	封裝: -	庫存42,579	-	30V	850mA (Tc)	280mOhm @ 1A, 10V, 940mOhm @ 500mA, 10V	2.6V @ 250µA	1.4nC @ 4.5V, 1.6nC @ 4.5V	48pF @ 15V, 50pF @ 15V	1.5W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SC-70-6 Dual	PowerPAK® SC-70-6 Dual
SIZ250DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 60V 14A 8PWRPAIR FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 38A (Tc) Rds On (Max) @ Id, Vgs: 12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V, 790pF @ 30V Power - Max: 4.3W (Ta), 33W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PowerPair® (3.3x3.3)	封裝: -	庫存1,410	-	60V	14A (Ta), 38A (Tc)	12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V	2.4V @ 250µA	21nC @ 10V	840pF @ 30V, 790pF @ 30V	4.3W (Ta), 33W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PowerPair® (3.3x3.3)
SI7946ADP-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 150V 7.7A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Rds On (Max) @ Id, Vgs: 186mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 7.5V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 75V Power - Max: 19.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	封裝: -	Request a Quote	-	150V	7.7A (Tc)	186mOhm @ 3A, 10V	3.5V @ 250µA	6.5nC @ 7.5V	230pF @ 75V	19.8W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
SQJ844AEP-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 30V 8A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 16.6mOhm @ 7.6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1161pF @ 15V Power - Max: 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	封裝: -	庫存9,000	-	30V	8A (Tc)	16.6mOhm @ 7.6A, 10V	2.5V @ 250µA	26nC @ 10V	1161pF @ 15V	48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
SI7844DP-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 6.4A PPAK SO-8 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.4A Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: - Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	封裝: -	Request a Quote	Logic Level Gate	30V	6.4A	22mOhm @ 10A, 10V	2.4V @ 250µA	20nC @ 10V	-	1.4W	-	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
SI6926ADQ-T1-BE3	Vishay Siliconix	MOSFET 2N-CH 20V 4.1A 8TSSOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封裝: -	庫存26,955	-	20V	4.1A (Ta)	30mOhm @ 4.5A, 4.5V	1V @ 250µA	10.5nC @ 4.5V	-	830mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP

SIZF5300DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 35A PWRPAIR

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 125A (Tc)
Rds On (Max) @ Id, Vgs: 2.43mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 15V
Power - Max: 4.5W (Ta), 56.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-PowerPair™
Supplier Device Package: PowerPAIR® 3x3FS

封裝: -

庫存16,227

-

30V

35A (Ta), 125A (Tc)

2.43mOhm @ 10A, 10V

2V @ 250µA

32nC @ 10V

1480pF @ 15V

4.5W (Ta), 56.8W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

12-PowerPair™

PowerPAIR® 3x3FS

SI7844DP-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 6.4A PPAK SO-8

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.4A
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

封裝: -

Request a Quote

Logic Level Gate

30V

6.4A

22mOhm @ 10A, 10V

2.4V @ 250µA

20nC @ 10V

-

1.4W

-

Surface Mount

PowerPAK® SO-8 Dual

SQJ910AEP-T1_BE3

Vishay Siliconix

MOSFET 2N-CH 30V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1869pF @ 15V
Power - Max: 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

封裝: -

庫存8,910

-

30V

30A (Tc)

7mOhm @ 12A, 10V

2.5V @ 250µA

39nC @ 10V

1869pF @ 15V

48W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

SQJ910AEP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 30V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1869pF @ 15V
Power - Max: 48W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

封裝: -

Request a Quote

-

30V

30A (Tc)

7mOhm @ 12A, 10V

2.5V @ 250µA

39nC @ 10V

1869pF @ 15V

48W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

SQJB80EP-T1_BE3

Vishay Siliconix

MOSFET 2N-CH 80V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
Power - Max: 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

封裝: -

庫存8,820

-

80V

30A (Tc)

19mOhm @ 8A, 10V

2.5V @ 250µA

32nC @ 10V

1400pF @ 25V

48W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

SQ4282EY-T1_BE3

Vishay Siliconix

MOSFET 2N-CH 30V 8A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2367pF @ 15V
Power - Max: 3.9W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: -

庫存7,488

-

30V

8A (Tc)

12.3mOhm @ 15A, 10V

2.5V @ 250µA

47nC @ 10V

2367pF @ 15V

3.9W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SQ4282EY-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 30V 8A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2367pF @ 15V
Power - Max: 3.9W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: -

庫存6,255

-

30V

8A (Tc)

12.3mOhm @ 15A, 10V

2.5V @ 250µA

47nC @ 10V

2367pF @ 15V

3.9W

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SI7223DN-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 30V 6A PPAK 1212

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 26.4mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1425pF @ 15V
Power - Max: 2.6W (Ta), 23W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Supplier Device Package: PowerPAK® 1212-8 Dual

封裝: -

庫存24,579

-

30V

6A (Tc)

26.4mOhm @ 8A, 10V

2.5V @ 250µA

40nC @ 10V

1425pF @ 15V

2.6W (Ta), 23W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK® 1212-8 Dual

SIA922EDJ-T4-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 4.4A SC70-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.9W (Ta), 7.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Supplier Device Package: PowerPAK® SC-70-6 Dual

封裝: -

Request a Quote

-

30V

4.4A (Ta), 4.5A (Tc)

64mOhm @ 3A, 4.5V

1.4V @ 250µA

12nC @ 10V

-

1.9W (Ta), 7.8W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK® SC-70-6 Dual

SQJB04ELP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 40V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 25V
Power - Max: 27W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

封裝: -

庫存70,419

-

40V

30A (Tc)

11mOhm @ 5A, 10V

2.2V @ 250µA

20nC @ 10V

1055pF @ 25V

27W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

SQJ942EP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 40V 15A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 45A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.8A, 10V, 11mOhm @ 10.1A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19.7nC @ 10V, 33.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 809pF @ 20V, 1451pF @ 20V
Power - Max: 17W, 48W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8

封裝: -

庫存9,000

-

40V

15A (Tc), 45A (Tc)

22mOhm @ 7.8A, 10V, 11mOhm @ 10.1A, 10V

2.3V @ 250µA

19.7nC @ 10V, 33.8nC @ 10V

809pF @ 20V, 1451pF @ 20V

17W, 48W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8

SIA938DJT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 4.5A SC70-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 10V
Power - Max: 1.9W (Ta), 7.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Supplier Device Package: PowerPAK® SC-70-6 Dual

封裝: -

庫存35,379

-

20V

4.5A (Ta), 4.5A (Tc)

21.5mOhm @ 5A, 10V

1.5V @ 250µA

11.5nC @ 10V

425pF @ 10V

1.9W (Ta), 7.8W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK® SC-70-6 Dual

SQJ500AEP-T1_BE3

Vishay Siliconix

MOSFET N/P-CH 40V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 9.8A, 10V, 27mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38.3nC @ 10V, 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1843pF @ 20V, 1628pF @ 20V
Power - Max: 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8

封裝: -

庫存17,814

-

40V

30A (Tc)

9.2mOhm @ 9.8A, 10V, 27mOhm @ 6A, 10V

2.3V @ 250µA, 2.5V @ 250µA

38.3nC @ 10V, 45nC @ 10V

1843pF @ 20V, 1628pF @ 20V

48W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8

SQJ202EP-T2_GE3

Vishay Siliconix

MOSFET 2N-CH 12V 20A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V, 3.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 54nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V, 2525pF @ 6V
Power - Max: 27W (Tc), 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric

封裝: -

庫存27,000

-

12V

20A (Tc), 60A (Tc)

6.5mOhm @ 15A, 10V, 3.3mOhm @ 20A, 10V

2V @ 250µA

22nC @ 10V, 54nC @ 10V

975pF @ 6V, 2525pF @ 6V

27W (Tc), 48W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

PowerPAK® SO-8 Dual Asymmetric

SI4511DY-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 20V 7.2A 8-SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.2A, 4.6A
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: -

Request a Quote

Logic Level Gate

20V

7.2A, 4.6A

14.5mOhm @ 9.6A, 10V

1.8V @ 250µA

18nC @ 4.5V

-

1.1W

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SQJ264EP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 60V 20A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 54A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V, 8.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V, 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V, 2100pF @ 25V
Power - Max: 27W (Tc), 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric

封裝: -

庫存17,100

-

60V

20A (Tc), 54A (Tc)

20mOhm @ 6A, 10V, 8.6mOhm @ 10A, 10V

3.5V @ 250µA

16nC @ 10V, 32nC @ 10V

1000pF @ 25V, 2100pF @ 25V

27W (Tc), 48W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

PowerPAK® SO-8 Dual Asymmetric

SQJ974EP-T1_BE3

Vishay Siliconix

MOSFET 2N-CH 100V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
Power - Max: 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

封裝: -

庫存18,000

-

100V

30A (Tc)

25.5mOhm @ 10A, 10V

2.5V @ 250µA

30nC @ 10V

1050pF @ 25V

48W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

SI1900DL-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 0.63A SC70-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 630mA (Ta), 590mA (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 590mA, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 300mW, 270mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

封裝: -

庫存9,000

-

30V

630mA (Ta), 590mA (Ta)

480mOhm @ 590mA, 10V

3V @ 250µA

1.4nC @ 10V

-

300mW, 270mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

SQJB68EP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 100V 11A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
Power - Max: 27W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

封裝: -

庫存51,204

-

100V

11A (Tc)

92mOhm @ 4A, 10V

2.5V @ 250µA

8nC @ 10V

280pF @ 25V

27W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

SQJB68EP-T1_BE3

Vishay Siliconix

MOSFET 2N-CH 100V 11A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
Power - Max: 27W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

封裝: -

庫存53,844

-

100V

11A (Tc)

92mOhm @ 4A, 10V

2.5V @ 250µA

8nC @ 10V

280pF @ 25V

27W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

SISF02DN-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 25V 30.5A/60A PPAK

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 30.5A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 10V
Power - Max: 5.2W (Ta), 69.4W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SCD
Supplier Device Package: PowerPAK® 1212-8SCD

封裝: -

庫存72

-

25V

30.5A (Ta), 60A (Tc)

3.5mOhm @ 7A, 10V

2.3V @ 250µA

56nC @ 10V

2650pF @ 10V

5.2W (Ta), 69.4W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK® 1212-8SCD

SI8902AEDB-T2-E1

Vishay Siliconix

MOSFET 2N-CH 24V 11A 6MICRO FOOT

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 11A
Rds On (Max) @ Id, Vgs: 28mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 5.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFBGA
Supplier Device Package: 6-Micro Foot™ (1.5x1)

封裝: -

Request a Quote

-

24V

11A

28mOhm @ 1A, 4.5V

900mV @ 250µA

-

5.7W

-55°C ~ 150°C (TJ)

Surface Mount

6-UFBGA

6-Micro Foot™ (1.5x1)

SQ1539EH-T1_GE3

Vishay Siliconix

MOSFET N/P-CH 30V 0.85A SC70-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 850mA (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 1A, 10V, 940mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V, 1.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 15V, 50pF @ 15V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Supplier Device Package: PowerPAK® SC-70-6 Dual

封裝: -

庫存42,579

-

30V

850mA (Tc)

280mOhm @ 1A, 10V, 940mOhm @ 500mA, 10V

2.6V @ 250µA

1.4nC @ 4.5V, 1.6nC @ 4.5V

48pF @ 15V, 50pF @ 15V

1.5W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SC-70-6 Dual

SIZ250DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 60V 14A 8PWRPAIR

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 38A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V, 790pF @ 30V
Power - Max: 4.3W (Ta), 33W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (3.3x3.3)

封裝: -

庫存1,410

-

60V

14A (Ta), 38A (Tc)

12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V

2.4V @ 250µA

21nC @ 10V

840pF @ 30V, 790pF @ 30V

4.3W (Ta), 33W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PowerPair® (3.3x3.3)

SI7946ADP-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 150V 7.7A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 186mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 7.5V
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 75V
Power - Max: 19.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

封裝: -

Request a Quote

-

150V

7.7A (Tc)

186mOhm @ 3A, 10V

3.5V @ 250µA

6.5nC @ 7.5V

230pF @ 75V

19.8W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

SQJ844AEP-T1_BE3

Vishay Siliconix

MOSFET 2N-CH 30V 8A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 16.6mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1161pF @ 15V
Power - Max: 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

封裝: -

庫存9,000

-

30V

8A (Tc)

16.6mOhm @ 7.6A, 10V

2.5V @ 250µA

26nC @ 10V

1161pF @ 15V

48W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

SI7844DP-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 6.4A PPAK SO-8

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.4A
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

封裝: -

Request a Quote

Logic Level Gate

30V

6.4A

22mOhm @ 10A, 10V

2.4V @ 250µA

20nC @ 10V

-

1.4W

-

Surface Mount

PowerPAK® SO-8 Dual

SI6926ADQ-T1-BE3

Vishay Siliconix

MOSFET 2N-CH 20V 4.1A 8TSSOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 830mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封裝: -

庫存26,955

-

20V

4.1A (Ta)

30mOhm @ 4.5A, 4.5V

1V @ 250µA

10.5nC @ 4.5V

-

830mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP