Vishay Semiconductor Diodes Division 產品

VS-22RIA20M

Vishay Semiconductor Diodes Division

SCR 200V 35A TO48

• Voltage - Off State: 200V
• Voltage - Gate Trigger (Vgt) (Max): 2V
• Current - Gate Trigger (Igt) (Max): 60mA
• Voltage - On State (Vtm) (Max): 1.7V
• Current - On State (It (AV)) (Max): 22A
• Current - On State (It (RMS)) (Max): 35A
• Current - Hold (Ih) (Max): 130mA
• Current - Off State (Max): 10mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 335A, 355A
• SCR Type: Standard Recovery
• Operating Temperature: -65°C ~ 125°C
• Mounting Type: Chassis, Stud Mount
• Package / Case: TO-208AA, TO-48-3, Stud
• Supplier Device Package: TO-208AA (TO-48)

封裝: TO-208AA, TO-48-3, Stud

VS-VSKL71/08

Vishay Semiconductor Diodes Division

MODULE THYRISTOR 75A ADD-A-PAK

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 800V
• Current - On State (It (AV)) (Max): 75A
• Current - On State (It (RMS)) (Max): 165A
• Voltage - Gate Trigger (Vgt) (Max): 2.5V
• Current - Gate Trigger (Igt) (Max): 150mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 1300A, 1360A
• Current - Hold (Ih) (Max): 250mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: ADD-A-PAK (3 + 4)

封裝: ADD-A-PAK (3 + 4)

BZD27C6V2P-M3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 800MW SMF DO219-M3

• Voltage - Zener (Nom) (Vz): 6.2V
• Tolerance: -
• Power - Max: 800mW
• Impedance (Max) (Zzt): 3 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: DO-219AB (SMF)

封裝: DO-219AB

MMSZ5232C-HE3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 5.6V 500MW SOD123

• Voltage - Zener (Nom) (Vz): 5.6V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 11 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 3V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

封裝: SOD-123

BZM55B18-TR

Vishay Semiconductor Diodes Division

DIODE ZENER 500MW MICROMELF

• Voltage - Zener (Nom) (Vz): 18V
• Tolerance: -
• Power - Max: 500mW
• Impedance (Max) (Zzt): 170 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 13V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, No Lead
• Supplier Device Package: MicroMELF

封裝: 2-SMD, No Lead

AZ23B11-HE3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 11V 300MW SOT23

• Configuration: 1 Pair Common Anode
• Voltage - Zener (Nom) (Vz): 11V
• Tolerance: ±2%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 20 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 8.5V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

封裝: TO-236-3, SC-59, SOT-23-3

DZ23C8V2-G3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 8.2V 300MW SOT23

• Configuration: 1 Pair Common Cathode
• Voltage - Zener (Nom) (Vz): 8.2V
• Tolerance: ±5%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 6V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

封裝: TO-236-3, SC-59, SOT-23-3

60APU06

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 60A TO247AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 60A
• Voltage - Forward (Vf) (Max) @ If: 1.68V @ 60A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 81ns
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC
• Operating Temperature - Junction: -55°C ~ 175°C

封裝: TO-247-3

8EWF12S

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 8A DPAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 270ns
• Current - Reverse Leakage @ Vr: 100µA @ 1200V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-Pak
• Operating Temperature - Junction: -40°C ~ 150°C

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

VS-20ETF10SPBF

Vishay Semiconductor Diodes Division

DIODE INPUT 20A D2PAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 1.31V @ 20A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 95ns
• Current - Reverse Leakage @ Vr: 100µA @ 1000V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB (D2PAK)
• Operating Temperature - Junction: -40°C ~ 150°C

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FESF8GTHE3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 8A ITO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 10µA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: TO-220-2 Full Pack, Isolated Tab

NS8DT-E3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 8A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: TO-220-2

1N5405-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 500V 3A DO201AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 500V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 500V
• Capacitance @ Vr, F: 30pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -50°C ~ 150°C

封裝: DO-201AD, Axial

1N6480HE3/96

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO213AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Capacitance @ Vr, F: 8pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF (Glass)
• Supplier Device Package: DO-213AB
• Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-213AB, MELF (Glass)

MBRF3045CTHE3/45

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 45V ITO220

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io) (per Diode): 15A
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 20A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 45V
• Operating Temperature - Junction: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AB

封裝: TO-220-3 Full Pack, Isolated Tab

SS6P4CHM3/86A

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 40V TO277A

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io) (per Diode): 3A
• Voltage - Forward (Vf) (Max) @ If: 650mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 40V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)

封裝: TO-277, 3-PowerDFN

3N259-E4/72

Vishay Semiconductor Diodes Division

BRIDGE RECT 1PHASE 1KV 2A KBPM

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1000V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
• Current - Reverse Leakage @ Vr: 5µA @ 1000V
• Operating Temperature: -55°C ~ 165°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, KBPM
• Supplier Device Package: KBPM

封裝: 4-SIP, KBPM

GBU4G-M3/51

Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 4A 400V GBU

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 400V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
• Current - Reverse Leakage @ Vr: 5µA @ 400V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBU
• Supplier Device Package: GBU

封裝: 4-SIP, GBU

3N259-E4/51

Vishay Semiconductor Diodes Division

DIODE BRIDGE 2A 1000V 4SIP

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1000V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
• Current - Reverse Leakage @ Vr: 5µA @ 1000V
• Operating Temperature: -55°C ~ 165°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, KBPM
• Supplier Device Package: KBPM

封裝: 4-SIP, KBPM

VS-2KBB100R

Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 1000V 1.9A D-37

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1000V
• Current - Average Rectified (Io): 1.9A
• Voltage - Forward (Vf) (Max) @ If: -
• Current - Reverse Leakage @ Vr: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, 2KBB
• Supplier Device Package: 2KBB

封裝: 4-SIP, 2KBB

GBU6K-E3/51

Vishay Semiconductor Diodes Division

DIODE GPP 6A 800V GPP INLINE GBU

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 800V
• Current - Average Rectified (Io): 3.8A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
• Current - Reverse Leakage @ Vr: 5µA @ 800V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBU
• Supplier Device Package: GBU

封裝: 4-SIP, GBU

5KP64HE3/54

Vishay Semiconductor Diodes Division

TVS DIODE 64VWM 114VC P600

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 64V
• Voltage - Breakdown (Min): 71.1V
• Voltage - Clamping (Max) @ Ipp: 114V
• Current - Peak Pulse (10/1000µs): 43.9A
• Power - Peak Pulse: 5000W (5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: P600, Axial
• Supplier Device Package: P600

封裝: P600, Axial

TPSMA12AHE3/61T

Vishay Semiconductor Diodes Division

TVS DIODE 10.2VWM 16.7VC SMA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 10.2V
• Voltage - Breakdown (Min): 11.4V
• Voltage - Clamping (Max) @ Ipp: 16.7V
• Current - Peak Pulse (10/1000µs): 24A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 185°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

封裝: DO-214AC, SMA

TPSMP30AHE3/85A

Vishay Semiconductor Diodes Division

TVS DIODE 25.6VWM DO220AA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 25.6V
• Voltage - Breakdown (Min): 28.5V
• Voltage - Clamping (Max) @ Ipp: 41.4V
• Current - Peak Pulse (10/1000µs): 9.7A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 185°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-220AA
• Supplier Device Package: DO-220AA (SMP)

封裝: DO-220AA

P6KE110CAHE3/54

Vishay Semiconductor Diodes Division

TVS DIODE 94VWM 152VC DO204AC

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 94V
• Voltage - Breakdown (Min): 105V
• Voltage - Clamping (Max) @ Ipp: 152V
• Current - Peak Pulse (10/1000µs): 3.9A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

封裝: DO-204AC, DO-15, Axial

P4KE27A-E3/73

Vishay Semiconductor Diodes Division

TVS DIODE 23.1VWM 37.5VC AXIAL

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 23.1V
• Voltage - Breakdown (Min): 25.7V
• Voltage - Clamping (Max) @ Ipp: 37.5V
• Current - Peak Pulse (10/1000µs): 10.7A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封裝: DO-204AL, DO-41, Axial

SMCJ188AHE3/57T

Vishay Semiconductor Diodes Division

TVS DIODE 188VWM 328VC SMC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 188V
• Voltage - Breakdown (Min): 209V
• Voltage - Clamping (Max) @ Ipp: 328V
• Current - Peak Pulse (10/1000µs): 4.6A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

封裝: DO-214AB, SMC

P4SMA480AHE3_AIH

Vishay Semiconductor Diodes Division

TVS DIODE 408VWM 658VC SMA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 408V
• Voltage - Breakdown (Min): 456V
• Voltage - Clamping (Max) @ Ipp: 658V
• Current - Peak Pulse (10/1000µs): 460mA
• Power - Peak Pulse: 300W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

封裝: DO-214AC, SMA