Vishay Semiconductor Diodes Division 產品

VS-ST330S04P1

Vishay Semiconductor Diodes Division

SCR 400V 520A TO-118

• Voltage - Off State: 400V
• Voltage - Gate Trigger (Vgt) (Max): 3V
• Current - Gate Trigger (Igt) (Max): 200mA
• Voltage - On State (Vtm) (Max): 1.52V
• Current - On State (It (AV)) (Max): 330A
• Current - On State (It (RMS)) (Max): 520A
• Current - Hold (Ih) (Max): 600mA
• Current - Off State (Max): 50mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 7570A, 7920A
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis, Stud Mount
• Package / Case: TO-209AE, TO-118-4, Stud
• Supplier Device Package: TO-209AE (TO-118)

封裝: TO-209AE, TO-118-4, Stud

IRKT56/04A

Vishay Semiconductor Diodes Division

SCR DBL 2SCR 400V 60A ADD-A-PAK

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 400V
• Current - On State (It (AV)) (Max): 60A
• Current - On State (It (RMS)) (Max): 135A
• Voltage - Gate Trigger (Vgt) (Max): 2.5V
• Current - Gate Trigger (Igt) (Max): 150mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 1310A, 1370A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: ADD-A-PAK (3 + 4)

封裝: ADD-A-PAK (3 + 4)

VS-VSKU56/14

Vishay Semiconductor Diodes Division

MODULE THYRISTOR 60A ADD-A-PAK

• Structure: Common Cathode - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 1400V
• Current - On State (It (AV)) (Max): 60A
• Current - On State (It (RMS)) (Max): 95A
• Voltage - Gate Trigger (Vgt) (Max): 2.5V
• Current - Gate Trigger (Igt) (Max): 150mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 1200A, 1256A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: ADD-A-PAK (3 + 4)

封裝: ADD-A-PAK (3 + 4)

VS-VSKT41/08

Vishay Semiconductor Diodes Division

MODULE THYRISTOR 45A ADD-A-PAK

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 800V
• Current - On State (It (AV)) (Max): 45A
• Current - On State (It (RMS)) (Max): 100A
• Voltage - Gate Trigger (Vgt) (Max): 2.5V
• Current - Gate Trigger (Igt) (Max): 150mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 850A, 890A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: ADD-A-PAK (3 + 4)

封裝: ADD-A-PAK (3 + 4)

1N4757A-T

Vishay Semiconductor Diodes Division

DIODE ZENER 1.3W DO41

• Voltage - Zener (Nom) (Vz): 51V
• Tolerance: ±5%
• Power - Max: 1.3W
• Impedance (Max) (Zzt): 1500 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 38.8V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41

封裝: DO-204AL, DO-41, Axial

ZPY4V3-TR

Vishay Semiconductor Diodes Division

DIODE ZENER 4.3V 1.3W DO41

• Voltage - Zener (Nom) (Vz): 4.3V
• Tolerance: ±5%
• Power - Max: 1.3W
• Impedance (Max) (Zzt): 4 Ohms
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41

封裝: DO-204AL, DO-41, Axial

BZT52B3V6-G3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 3.6V 410MW SOD123

• Voltage - Zener (Nom) (Vz): 3.6V
• Tolerance: ±2%
• Power - Max: 410mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

封裝: SOD-123

MMSZ5240C-HE3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 10V 500MW SOD123

• Voltage - Zener (Nom) (Vz): 10V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 17 Ohms
• Current - Reverse Leakage @ Vr: 3µA @ 8V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

封裝: SOD-123

BZX384C3V9-G3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 3.9V 200MW SOD323

• Voltage - Zener (Nom) (Vz): 3.9V
• Tolerance: ±5%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 90 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

封裝: SC-76, SOD-323

MBRF1650-E3/45

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY ITO-220AC

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

封裝: -

EGP10A-M3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 5µA @ 50V
• Capacitance @ Vr, F: 22pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -65°C ~ 150°C

封裝: DO-204AL, DO-41, Axial

SS2P4-E3/85A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 2A DO220AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 150µA @ 40V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-220AA
• Supplier Device Package: DO-220AA (SMP)
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-220AA

1N4246GPHE3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1µA @ 400V
• Capacitance @ Vr, F: 8pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -65°C ~ 160°C

封裝: DO-204AL, DO-41, Axial

VS-87HF80

Vishay Semiconductor Diodes Division

DIODE GENERAL PURPOSE 85A DO-5

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 85A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 267A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB (DO-5)
• Operating Temperature - Junction: -65°C ~ 180°C

封裝: DO-203AB, DO-5, Stud

S5GHM3/57T

Vishay Semiconductor Diodes Division

DIODE GP 400V 5A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2.5µs
• Current - Reverse Leakage @ Vr: 10µA @ 400V
• Capacitance @ Vr, F: 40pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-214AB, SMC

SB560A-E3/73

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 5A DO201AD

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 700mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 60V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -65°C ~ 150°C

封裝: DO-201AD, Axial

S3G-M3/9AT

Vishay Semiconductor Diodes Division

DIODE GPP 3A 400V DO-214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2.5A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2.5µs
• Current - Reverse Leakage @ Vr: 10µA @ 400V
• Capacitance @ Vr, F: 60pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-214AB, SMC

GP08GE-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 800MA DO204

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 800mA
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Current - Reverse Leakage @ Vr: 5µA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-204AL, DO-41, Axial

U1B-E3/61T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO214AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 24ns
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-214AC, SMA

S2B-M3/52T

Vishay Semiconductor Diodes Division

DIODE GPP 1.5A 100V DO-214AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Current - Reverse Leakage @ Vr: 1µA @ 100V
• Capacitance @ Vr, F: 16pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-214AA, SMB

GSD2004W-G3-08

Vishay Semiconductor Diodes Division

DIODE GEN PURP 240V 225MA SOD123

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 240V
• Current - Average Rectified (Io): 225mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 100nA @ 240V
• Capacitance @ Vr, F: 5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123
• Operating Temperature - Junction: 150°C (Max)

封裝: SOD-123

HFA180MD60C

Vishay Semiconductor Diodes Division

DIODE MODULE 600V TO244AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io) (per Diode): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 140ns
• Current - Reverse Leakage @ Vr: -
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: TO-244AB
• Supplier Device Package: TO-244AB

封裝: TO-244AB

HFA16TA60C

Vishay Semiconductor Diodes Division

DIODE ARRAY GP 600V 8A TO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io) (per Diode): 8A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 55ns
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

封裝: TO-220-3

3KASMC16AHM3_A/I

Vishay Semiconductor Diodes Division

TVS DIODE 16VWM 26VC SMCJ

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 16V
• Voltage - Breakdown (Min): 17.8V
• Voltage - Clamping (Max) @ Ipp: 28.8V
• Current - Peak Pulse (10/1000µs): 104A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 185°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

封裝: DO-214AB, SMC

SMA5J36-E3/61

Vishay Semiconductor Diodes Division

TVS DIODE 36VWM 64.3VC SMA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 36V
• Voltage - Breakdown (Min): 40V
• Voltage - Clamping (Max) @ Ipp: 64.3V
• Current - Peak Pulse (10/1000µs): 7.8A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

封裝: DO-214AC, SMA

TMPG06-15AHE3_A/C

Vishay Semiconductor Diodes Division

TVS DIODE 21.2VC 18.9A MPG06

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 12.8V
• Voltage - Breakdown (Min): 14.3V
• Voltage - Clamping (Max) @ Ipp: 21.2V
• Current - Peak Pulse (10/1000µs): 18.9A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 185°C (TJ)
• Mounting Type: Through Hole
• Package / Case: MPG06, Axial
• Supplier Device Package: MPG06

封裝: MPG06, Axial

SMBG10CAHE3/52

Vishay Semiconductor Diodes Division

TVS DIODE 10VWM 17VC SMB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 10V
• Voltage - Breakdown (Min): 11.1V
• Voltage - Clamping (Max) @ Ipp: 17V
• Current - Peak Pulse (10/1000µs): 35.3A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: DO-215AA (SMBG)

封裝: DO-215AA, SMB Gull Wing

VTVS33ASMF-HM3-18

Vishay Semiconductor Diodes Division

TVS DIODE 55VC 6.91A DO219AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 33.3V
• Voltage - Breakdown (Min): 37.1V
• Voltage - Clamping (Max) @ Ipp: 55V
• Current - Peak Pulse (10/1000µs): 6.91A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: 379pF @ 1MHz
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: DO-219AB (SMF)

封裝: DO-219AB