Vishay Semiconductor Diodes Division 產品

VS-GA200SA60SP

Vishay Semiconductor Diodes Division

MODULE IGBT SOT-227

• IGBT Type: -
• Configuration: Single
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): -
• Power - Max: 781W
• Vce(on) (Max) @ Vge, Ic: 1.3V @ 15V, 100A
• Current - Collector Cutoff (Max): 1mA
• Input Capacitance (Cies) @ Vce: 16.25nF @ 30V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

封裝: SOT-227-4, miniBLOC

VS-16TTS08SPBF

Vishay Semiconductor Diodes Division

SCR 800V 16A D2PAK

• Voltage - Off State: 800V
• Voltage - Gate Trigger (Vgt) (Max): 2V
• Current - Gate Trigger (Igt) (Max): 60mA
• Voltage - On State (Vtm) (Max): 1.4V
• Current - On State (It (AV)) (Max): 10A
• Current - On State (It (RMS)) (Max): 16A
• Current - Hold (Ih) (Max): 150mA
• Current - Off State (Max): 10mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 170A @ 50Hz
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

BZD17C180P-E3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 800MW SMF DO219AB

• Voltage - Zener (Nom) (Vz): 180V
• Tolerance: -
• Power - Max: 800mW
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: 1µA @ 130V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: DO-219AB (SMF)

封裝: DO-219AB

BZD17C82P-E3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 800MW SMF DO219AB

• Voltage - Zener (Nom) (Vz): 82V
• Tolerance: -
• Power - Max: 800mW
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: 1µA @ 62V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: DO-219AB (SMF)

封裝: DO-219AB

BZG03C22TR3

Vishay Semiconductor Diodes Division

DIODE ZENER 22V 1.25 VA DO214AC

• Voltage - Zener (Nom) (Vz): 22V
• Tolerance: -
• Power - Max: 1.25 VA
• Impedance (Max) (Zzt): 6 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 16V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 500mA
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC

封裝: DO-214AC, SMA

BZD27B8V2P-HE3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 8.2V 0.8W DO-219AB

• Voltage - Zener (Nom) (Vz): 8.2V
• Tolerance: -
• Power - Max: 800mW
• Impedance (Max) (Zzt): 2 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 3V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: DO-219AB (SMF)

封裝: DO-219AB

BZD27B180P-HE3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 180V 0.8W DO-219AB

• Voltage - Zener (Nom) (Vz): 180V
• Tolerance: -
• Power - Max: 800mW
• Impedance (Max) (Zzt): 400 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 130V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: DO-219AB (SMF)

封裝: DO-219AB

GDZ3V3B-HG3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 3.3V 200MW SOD323

• Voltage - Zener (Nom) (Vz): 3.3V
• Tolerance: ±2%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 120 Ohms
• Current - Reverse Leakage @ Vr: 20µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

封裝: SC-76, SOD-323

BZT52B68-E3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 68V 410MW SOD123

• Voltage - Zener (Nom) (Vz): 68V
• Tolerance: ±2%
• Power - Max: 410mW
• Impedance (Max) (Zzt): 200 Ohms
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

封裝: SOD-123

BZX84C12-G3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 12V 300MW SOT23-3

• Voltage - Zener (Nom) (Vz): 12V
• Tolerance: ±5%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 25 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 8V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

封裝: TO-236-3, SC-59, SOT-23-3

TZMB47-GS18

Vishay Semiconductor Diodes Division

DIODE ZENER 47V 500MW SOD80

• Voltage - Zener (Nom) (Vz): 47V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 110 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 36V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: SOD-80 MiniMELF

封裝: DO-213AC, MINI-MELF, SOD-80

BZX55B43-TAP

Vishay Semiconductor Diodes Division

DIODE ZENER 43V 500MW DO35

• Voltage - Zener (Nom) (Vz): 43V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 90 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 33V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

封裝: DO-204AH, DO-35, Axial

BZD27C43P-M3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 800MW SMF DO219-M3

• Voltage - Zener (Nom) (Vz): 43V
• Tolerance: -
• Power - Max: 800mW
• Impedance (Max) (Zzt): 45 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 33V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: DO-219AB (SMF)

封裝: DO-219AB

AS3PDHM3/87A

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 2.1A TO277A

• Diode Type: Avalanche
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 2.1A (DC)
• Voltage - Forward (Vf) (Max) @ If: 920mV @ 1.5A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.2µs
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Capacitance @ Vr, F: 37pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)
• Operating Temperature - Junction: -55°C ~ 175°C

封裝: TO-277, 3-PowerDFN

SS1P4-E3/85A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 1A DO220AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 530mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 150µA @ 40V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-220AA
• Supplier Device Package: DO-220AA (SMP)
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-220AA

RS2BHE3/5BT

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1.5A DO214AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Capacitance @ Vr, F: 20pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-214AA, SMB

HFA06TB120

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 6A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 3V @ 6A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 80ns
• Current - Reverse Leakage @ Vr: 5µA @ 1200V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: TO-220-2

SS16/1

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 1A DO214AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 750mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 60V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -65°C ~ 150°C

封裝: DO-214AC, SMA

VS-1N3880

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 6A DO203AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 1.4V @ 6A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 300ns
• Current - Reverse Leakage @ Vr: 15µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: DO-203AA
• Operating Temperature - Junction: -65°C ~ 150°C

封裝: DO-203AA, DO-4, Stud

V20150SG-M3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20A 150V TO-220AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 1.6V @ 20A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 150V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: TO-220-3

1N4934GPE-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 200ns
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-204AL, DO-41, Axial

SSC54-E3/9AT

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 5A DO214AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 490mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 40V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)
• Operating Temperature - Junction: -65°C ~ 150°C

封裝: DO-214AB, SMC

10CTQ150STRL

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 150V D2PAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io) (per Diode): 5A
• Voltage - Forward (Vf) (Max) @ If: 930mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50µA @ 150V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

20CTQ035

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 35V TO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 35V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 640mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2mA @ 35V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

封裝: TO-220-3

VS-2KBP06

Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 600V 2.0A D-44

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, D-44
• Supplier Device Package: D-44

封裝: 4-SIP, D-44

5KP64-E3/54

Vishay Semiconductor Diodes Division

TVS DIODE 64VWM 114VC P600

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 64V
• Voltage - Breakdown (Min): 71.1V
• Voltage - Clamping (Max) @ Ipp: 114V
• Current - Peak Pulse (10/1000µs): 43.9A
• Power - Peak Pulse: 5000W (5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: P600, Axial
• Supplier Device Package: P600

封裝: P600, Axial

SA7.0CHE3/73

Vishay Semiconductor Diodes Division

TVS DIODE 7VWM 13.3VC DO204AC

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 7V
• Voltage - Breakdown (Min): 7.78V
• Voltage - Clamping (Max) @ Ipp: 13.3V
• Current - Peak Pulse (10/1000µs): 37.6A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

封裝: DO-204AC, DO-15, Axial

SMC3K24CAHM3/57

Vishay Semiconductor Diodes Division

TVS DIODE 24VWM 38.9VC DO-214AB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 24V
• Voltage - Breakdown (Min): 26.7V
• Voltage - Clamping (Max) @ Ipp: 38.9V
• Current - Peak Pulse (10/1000µs): 77.1A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

封裝: DO-214AB, SMC