Vishay Semiconductor Diodes Division 產品

VS-ST180S04P0VPBF

Vishay Semiconductor Diodes Division

SCR 400V 314A TO-93

• Voltage - Off State: 400V
• Voltage - Gate Trigger (Vgt) (Max): 3V
• Current - Gate Trigger (Igt) (Max): 150mA
• Voltage - On State (Vtm) (Max): 1.75V
• Current - On State (It (AV)) (Max): 200A
• Current - On State (It (RMS)) (Max): 314A
• Current - Hold (Ih) (Max): 600mA
• Current - Off State (Max): 30mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 4200A, 4400A
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis, Stud Mount
• Package / Case: TO-209AB, TO-93-4, Stud
• Supplier Device Package: TO-209AB (TO-93)

封裝: TO-209AB, TO-93-4, Stud

BZD27B6V2P-E3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 6.2V 0.8W DO-219AB

• Voltage - Zener (Nom) (Vz): 6.2V
• Tolerance: -
• Power - Max: 800mW
• Impedance (Max) (Zzt): 3 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: DO-219AB (SMF)

封裝: DO-219AB

MMBZ5236C-G3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 7.5V 225MW SOT23-3

• Voltage - Zener (Nom) (Vz): 7.5V
• Tolerance: ±2%
• Power - Max: 225mW
• Impedance (Max) (Zzt): 6 Ohms
• Current - Reverse Leakage @ Vr: 3µA @ 6V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

封裝: TO-236-3, SC-59, SOT-23-3

GDZ8V2B-HE3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 8.2V 200MW SOD323

• Voltage - Zener (Nom) (Vz): 8.2V
• Tolerance: ±2%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 5V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

封裝: SC-76, SOD-323

BZX84C3V0-G3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 3V 300MW SOT23-3

• Voltage - Zener (Nom) (Vz): 3V
• Tolerance: ±5%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 95 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

封裝: TO-236-3, SC-59, SOT-23-3

BZT55C10-GS18

Vishay Semiconductor Diodes Division

DIODE ZENER 10V 500MW SOD80

• Voltage - Zener (Nom) (Vz): 10V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 7.5V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: SOD-80 Variant
• Supplier Device Package: SOD-80 QuadroMELF

封裝: SOD-80 Variant

BZX55B8V2-TAP

Vishay Semiconductor Diodes Division

DIODE ZENER 8.2V 500MW DO35

• Voltage - Zener (Nom) (Vz): 8.2V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 6.2V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

封裝: DO-204AH, DO-35, Axial

BZD27B30P-M3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 30V 0.8W DO-219AB

• Voltage - Zener (Nom) (Vz): 30V
• Tolerance: -
• Power - Max: 800mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 22V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: DO-219AB (SMF)

封裝: DO-219AB

SS5P10HM3/86A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 5A 100V TO-277A

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 680mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 15µA @ 100V
• Capacitance @ Vr, F: 130pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: TO-277, 3-PowerDFN

1N4003GPEHE3/53

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Capacitance @ Vr, F: 8pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-204AL, DO-41, Axial

ES1PBHE3/84A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO220AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Capacitance @ Vr, F: 10pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-220AA
• Supplier Device Package: DO-220AA (SMP)
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-220AA

15TQ060STRR

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 15A D2PAK

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 620mV @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 800µA @ 60V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

VSKE250-16

Vishay Semiconductor Diodes Division

DIODE MODULE 1.6KV 250A MAGNAPAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1600V
• Current - Average Rectified (Io): 250A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50mA @ 1600V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: 3-MAGN-A-PAK?
• Supplier Device Package: MAGN-A-PAK?
• Operating Temperature - Junction: -

封裝: 3-MAGN-A-PAK?

S1J-M3/5AT

Vishay Semiconductor Diodes Division

DIODE GPP 1A 600V DO-214AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.8µs
• Current - Reverse Leakage @ Vr: 1µA @ 600V
• Capacitance @ Vr, F: 12pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-214AC, SMA

V1PL45-M3/H

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 1A MICROSMP

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 530mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 250µA @ 45V
• Capacitance @ Vr, F: 200pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-220AA
• Supplier Device Package: MicroSMP
• Operating Temperature - Junction: -40°C ~ 150°C

封裝: DO-220AA

VS-50WQ06FNHM3

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 5.5A TO252AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 5.5A
• Voltage - Forward (Vf) (Max) @ If: 570mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3mA @ 60V
• Capacitance @ Vr, F: 360pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-PAK (TO-252AA)
• Operating Temperature - Junction: -40°C ~ 150°C

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

VS-440CNQ030PBF

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 30V TO244

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io) (per Diode): 220A
• Voltage - Forward (Vf) (Max) @ If: 630mV @ 440A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20mA @ 30V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Screw Mount
• Package / Case: TO-244AB
• Supplier Device Package: TO-244AB

封裝: TO-244AB

VS-HFA70FA120

Vishay Semiconductor Diodes Division

DIODE HEXFRED 70A 1200V SOT-227

• Diode Configuration: 2 Independent
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io) (per Diode): 70A
• Voltage - Forward (Vf) (Max) @ If: 3.8V @ 60A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 51ns
• Current - Reverse Leakage @ Vr: 75µA @ 1200V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

封裝: SOT-227-4, miniBLOC

VS-MBR20100CT-1HM3

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 10A TO262

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 800mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 100V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
• Supplier Device Package: TO-262

封裝: TO-262-3 Long Leads, I2Pak, TO-262AA

VFT1045CBP-M3/4W

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 45V ITO220

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io) (per Diode): 5A
• Voltage - Forward (Vf) (Max) @ If: 580mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 45V
• Operating Temperature - Junction: 200°C (Max)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AB

封裝: TO-220-3 Full Pack, Isolated Tab

VS-8CSH01-M3/87A

Vishay Semiconductor Diodes Division

DIODE STANDARD 100V 4A TO277A

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io) (per Diode): 4A
• Voltage - Forward (Vf) (Max) @ If: 950mV @ 4A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 2µA @ 100V
• Operating Temperature - Junction: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)

封裝: TO-277, 3-PowerDFN

VS-16CTQ100PBF

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 100V TO220

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io) (per Diode): 8A
• Voltage - Forward (Vf) (Max) @ If: 720mV @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 550µA @ 100V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

封裝: TO-220-3

GBPC35005/1

Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 35A 50V GBPC

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 50V
• Current - Average Rectified (Io): 35A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
• Current - Reverse Leakage @ Vr: 5µA @ 50V
• Operating Temperature: -
• Mounting Type: QC Terminal
• Package / Case: 4-Square, GBPC
• Supplier Device Package: GBPC

封裝: 4-Square, GBPC

VS-2KBB60R

Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 600V 1.9A D-37

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600V
• Current - Average Rectified (Io): 1.9A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.9V
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, 2KBB
• Supplier Device Package: 2KBB

封裝: 4-SIP, 2KBB

TPC24AHM3/86A

Vishay Semiconductor Diodes Division

TVS DIODE 20.5VWM 33.2VC SMPC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 20.5V
• Voltage - Breakdown (Min): 22.8V
• Voltage - Clamping (Max) @ Ipp: 33.2V
• Current - Peak Pulse (10/1000µs): 45.2A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 185°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)

封裝: TO-277, 3-PowerDFN

SMB8J33C-E3/52

Vishay Semiconductor Diodes Division

TVS DIODE 33VWM 59VC SMB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 33V
• Voltage - Breakdown (Min): 36.7V
• Voltage - Clamping (Max) @ Ipp: 59V
• Current - Peak Pulse (10/1000µs): 13.6A
• Power - Peak Pulse: 800W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)

封裝: DO-214AA, SMB

5KP54A-E3/73

Vishay Semiconductor Diodes Division

TVS DIODE 54VWM 87.1VC P600

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 54V
• Voltage - Breakdown (Min): 60V
• Voltage - Clamping (Max) @ Ipp: 87.1V
• Current - Peak Pulse (10/1000µs): 57.4A
• Power - Peak Pulse: 5000W (5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: P600, Axial
• Supplier Device Package: P600

封裝: P600, Axial

SM15T150CA-M3/9AT

Vishay Semiconductor Diodes Division

TVS DIODE 128VWM 207VC DO-214AB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 128V
• Voltage - Breakdown (Min): 143V
• Voltage - Clamping (Max) @ Ipp: 207V
• Current - Peak Pulse (10/1000µs): 7.2A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

封裝: DO-214AB, SMC