圖片 |
零件編號 |
製造商 |
描述 |
封裝 |
庫存 |
數量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 30A TO-3PN
|
封裝: TO-3P-3, SC-65-3 |
庫存5,440 |
|
MOSFET (Metal Oxide) | 250V | 30A (Ta) | 10V | 3.5V @ 1mA | 132nC @ 10V | 5400pF @ 10V | ±20V | - | 90W (Tc) | 68 mOhm @ 15A, 10V | 150°C (TJ) | Through Hole | TO-3P(N)IS | TO-3P-3, SC-65-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 20A TO220SM
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存6,768 |
|
MOSFET (Metal Oxide) | 250V | 20A (Ta) | 10V | 3.5V @ 1mA | 100nC @ 10V | 4000pF @ 10V | ±20V | - | 100W (Tc) | 105 mOhm @ 10A, 10V | 150°C (TJ) | Surface Mount | TO-220SM | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 30A TO-3PN
|
封裝: TO-3P-3, SC-65-3 |
庫存3,392 |
|
MOSFET (Metal Oxide) | 250V | 30A (Ta) | 10V | 3.5V @ 1mA | 132nC @ 10V | 5400pF @ 10V | ±20V | - | 150W (Tc) | 68 mOhm @ 15A, 10V | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 18A TO-3PN
|
封裝: TO-3P-3, SC-65-3 |
庫存6,896 |
|
MOSFET (Metal Oxide) | 500V | 18A (Ta) | 10V | 4V @ 1mA | 80nC @ 10V | 3720pF @ 10V | ±30V | - | 90W (Tc) | 270 mOhm @ 10A, 10V | 150°C (TJ) | Through Hole | TO-3P(N)IS | TO-3P-3, SC-65-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 14A TO-3PN
|
封裝: TO-3P-3, SC-65-3 |
庫存3,392 |
|
MOSFET (Metal Oxide) | 500V | 14A (Ta) | 10V | 4V @ 1mA | 58nC @ 10V | 2600pF @ 10V | ±30V | - | 80W (Tc) | 400 mOhm @ 7A, 10V | 150°C (TJ) | Through Hole | TO-3P(N)IS | TO-3P-3, SC-65-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 900V 8A TO-3PN
|
封裝: TO-3P-3, SC-65-3 |
庫存5,424 |
|
MOSFET (Metal Oxide) | 900V | 8A (Ta) | 10V | 4V @ 1mA | 58nC @ 10V | 2040pF @ 25V | ±30V | - | 85W (Tc) | 1.4 Ohm @ 4A, 10V | 150°C (TJ) | Through Hole | TO-3P(N)IS | TO-3P-3, SC-65-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 900V 3A TO-3PN
|
封裝: TO-3P-3, SC-65-3 |
庫存5,696 |
|
MOSFET (Metal Oxide) | 900V | 3A (Ta) | 10V | 4V @ 1mA | 25nC @ 10V | 750pF @ 25V | ±30V | - | 125W (Tc) | 4.3 Ohm @ 1.5A, 10V | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 1A PW-MINI
|
封裝: TO-243AA |
庫存19,800 |
|
MOSFET (Metal Oxide) | 100V | 1A (Ta) | 4V, 10V | 2V @ 1mA | 6.3nC @ 10V | 140pF @ 10V | ±20V | - | 500mW (Ta) | 700 mOhm @ 500mA, 10V | 150°C (TJ) | Surface Mount | PW-MINI | TO-243AA |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 2.7A VS-8
|
封裝: 8-SMD, Flat Lead |
庫存3,328 |
|
MOSFET (Metal Oxide) | 20V | 2.7A (Ta) | 1.8V, 4.5V | 1.2V @ 200µA | 6nC @ 5V | 470pF @ 10V | ±8V | Schottky Diode (Isolated) | 330mW (Ta) | 110 mOhm @ 1.4A, 4.5V | 150°C (TJ) | Surface Mount | VS-8 (2.9x1.5) | 8-SMD, Flat Lead |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 5A PW-MOLD
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存4,928 |
|
MOSFET (Metal Oxide) | 60V | 5A (Ta) | 4V, 10V | 2V @ 1mA | 22nC @ 10V | 630pF @ 10V | ±20V | - | 20W (Tc) | 190 mOhm @ 2.5A, 10V | 150°C (TJ) | Surface Mount | PW-MOLD | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 4A 8-SOPA
|
封裝: 8-PowerVDFN |
庫存6,416 |
|
MOSFET (Metal Oxide) | 250V | 4A (Ta) | 10V | 4V @ 1mA | 10nC @ 10V | 600pF @ 10V | ±20V | - | 1.6W (Ta), 45W (Tc) | 580 mOhm @ 2A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 200V 5.5A 8-SOPA
|
封裝: 8-PowerVDFN |
庫存4,096 |
|
MOSFET (Metal Oxide) | 200V | 5.5A (Ta) | 10V | 4V @ 1mA | 10nC @ 10V | 600pF @ 10V | ±20V | - | 1.6W (Ta), 45W (Tc) | 450 mOhm @ 2.7A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 150V 7A 8-SOPA
|
封裝: 8-PowerVDFN |
庫存5,808 |
|
MOSFET (Metal Oxide) | 150V | 7A (Ta) | 10V | 4V @ 1mA | 10nC @ 10V | 600pF @ 10V | ±20V | - | 1.6W (Ta), 45W (Tc) | 350 mOhm @ 3.5A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 35A TO-247
|
封裝: TO-247-3 |
庫存4,416 |
|
MOSFET (Metal Oxide) | 650V | 35A (Ta) | 10V | 4.5V @ 2.1mA | 115nC @ 10V | 4100pF @ 300V | ±30V | - | 270W (Tc) | 95 mOhm @ 17.5A, 10V | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 30.8A TO-3P(N)
|
封裝: TO-3P-3, SC-65-3 |
庫存7,888 |
|
MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 3.7V @ 1.5mA | 105nC @ 10V | 3000pF @ 300V | ±30V | Super Junction | 230W (Tc) | 88 mOhm @ 15.4A, 10V | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 30.8A TO-220SIS
|
封裝: TO-220-3 Full Pack, Isolated Tab |
庫存3,536 |
|
MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 3.7V @ 1.5mA | 86nC @ 10V | 3000pF @ 300V | ±30V | Super Junction | 45W (Tc) | 88 mOhm @ 15.4A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 30.8A TO-220
|
封裝: TO-220-3 |
庫存7,856 |
|
MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 3.7V @ 1.5mA | 86nC @ 10V | 3000pF @ 300V | ±30V | Super Junction | 230W (Tc) | 88 mOhm @ 15.4A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 20A TO-247
|
封裝: TO-247-3 |
庫存3,344 |
|
MOSFET (Metal Oxide) | 600V | 20A (Ta) | 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | ±30V | - | 165W (Tc) | 155 mOhm @ 10A, 10V | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 30.8A 5DFN
|
封裝: 4-VSFN Exposed Pad |
庫存270,000 |
|
MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 3.7V @ 1.5mA | 86nC @ 10V | 3000pF @ 300V | ±30V | Super Junction | 240W (Tc) | 98 mOhm @ 15.4A, 10V | 150°C (TJ) | Surface Mount | 5-DFN (8x8) | 4-VSFN Exposed Pad |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 20A TO-220
|
封裝: TO-220-3 |
庫存6,224 |
|
MOSFET (Metal Oxide) | 600V | 20A (Ta) | 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | ±30V | - | 165W (Tc) | 155 mOhm @ 10A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 11.5A TO-220SIS
|
封裝: TO-220-3 Full Pack |
庫存6,800 |
|
MOSFET (Metal Oxide) | 600V | 11.5A (Ta) | 10V | 3.7V @ 600µA | 25nC @ 10V | 890pF @ 300V | ±30V | Super Junction | 35W (Tc) | 300 mOhm @ 5.8A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 19A TO-220SIS
|
封裝: TO-220-3 Full Pack |
庫存3,200 |
|
MOSFET (Metal Oxide) | 450V | 19A (Ta) | 10V | 4V @ 1mA | 45nC @ 10V | 2600pF @ 25V | ±30V | - | 50W (Tc) | 250 mOhm @ 9.5A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 18A TO-220SIS
|
封裝: TO-220-3 Full Pack |
庫存4,736 |
|
MOSFET (Metal Oxide) | 500V | 18A (Ta) | 10V | 4V @ 1mA | 45nC @ 10V | 2600pF @ 25V | ±30V | - | 50W (Tc) | 270 mOhm @ 9A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 9.7A TO-220SIS
|
封裝: TO-220-3 Full Pack |
庫存4,192 |
|
MOSFET (Metal Oxide) | 600V | 9.7A (Ta) | 10V | 3.7V @ 500µA | 20nC @ 10V | 700pF @ 300V | ±30V | Super Junction | 30W (Tc) | 380 mOhm @ 4.9A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 15A TO-220SIS
|
封裝: TO-220-3 Full Pack |
庫存4,832 |
|
MOSFET (Metal Oxide) | 600V | 15A (Ta) | 10V | 4V @ 1mA | 45nC @ 10V | 2600pF @ 25V | ±30V | - | 50W (Tc) | 370 mOhm @ 7.5A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 9.7A IPAK
|
封裝: TO-251-3 Stub Leads, IPak |
庫存4,384 |
|
MOSFET (Metal Oxide) | 600V | 9.7A (Ta) | 10V | 3.7V @ 500µA | 20nC @ 10V | 700pF @ 300V | ±30V | - | 80W (Tc) | 430 mOhm @ 4.9A, 10V | 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Stub Leads, IPak |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13.7A I2PAK
|
封裝: TO-262-3 Long Leads, I2Pak, TO-262AA |
庫存6,688 |
|
MOSFET (Metal Oxide) | 650V | 13.7A (Ta) | 10V | 4.5V @ 690µA | 40nC @ 10V | 1300pF @ 300V | ±30V | - | 130W (Tc) | 300 mOhm @ 6.9A, 10V | 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 14A TO-220SIS
|
封裝: TO-220-3 Full Pack |
庫存2,976 |
|
MOSFET (Metal Oxide) | 550V | 14A (Ta) | 10V | 4V @ 1mA | 40nC @ 10V | 2300pF @ 25V | ±30V | - | 50W (Tc) | 370 mOhm @ 7A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |