Taiwan Semiconductor Corporation 產品

1SMB5938 R5G

Taiwan Semiconductor Corporation

DIODE, ZENER, 36V, 3000MW, 5%, D

• Voltage - Zener (Nom) (Vz): 36V
• Tolerance: ±5%
• Power - Max: 3W
• Impedance (Max) (Zzt): 38 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 27.4V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)

封裝: DO-214AA, SMB

BZD27C130P RVG

Taiwan Semiconductor Corporation

DIODE, ZENER, 130V, 1000MW, %, S

• Voltage - Zener (Nom) (Vz): 132.5V
• Tolerance: ±6.41%
• Power - Max: 1W
• Impedance (Max) (Zzt): 300 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 100V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

封裝: DO-219AB

BZD27C11P MTG

Taiwan Semiconductor Corporation

DIODE, ZENER, 11V, 1000MW, %, SU

• Voltage - Zener (Nom) (Vz): 11V
• Tolerance: ±5.45%
• Power - Max: 1W
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: 4µA @ 8.2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

封裝: DO-219AB

1SMA120Z R3G

Taiwan Semiconductor Corporation

DIODE, ZENER, 120V, 1000MW, %, D

• Voltage - Zener (Nom) (Vz): 120V
• Tolerance: ±5%
• Power - Max: 1.25W
• Impedance (Max) (Zzt): 550 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 91.2V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

封裝: DO-214AC, SMA

1N4748A A0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 22V, 1000MW, 5%, D

• Voltage - Zener (Nom) (Vz): 22V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 23 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 16.7V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封裝: DO-204AL, DO-41, Axial

1N4742A R1G

Taiwan Semiconductor Corporation

DIODE, ZENER, 12V, 1000MW, 5%, D

• Voltage - Zener (Nom) (Vz): 12V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 35 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 20.6V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封裝: DO-204AL, DO-41, Axial

BZX584B5V1 RKG

Taiwan Semiconductor Corporation

DIODE, ZENER, 5.1V, 150MW, 2%, S

• Voltage - Zener (Nom) (Vz): 5.1V
• Tolerance: ±2%
• Power - Max: 150mW
• Impedance (Max) (Zzt): 60 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 2V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523F

封裝: SC-79, SOD-523

TSZU52C2V7 RGG

Taiwan Semiconductor Corporation

DIODE, ZENER, 2.7V, 150MW, 5%, 0

• Voltage - Zener (Nom) (Vz): 2.7V
• Tolerance: ±5%
• Power - Max: 150mW
• Impedance (Max) (Zzt): 83 Ohms
• Current - Reverse Leakage @ Vr: 75µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -55°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 0201 (0603 Metric)
• Supplier Device Package: 0603

封裝: 0201 (0603 Metric)

BZV55C5V6 L0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 5.6V, 500MW, 5%, M

• Voltage - Zener (Nom) (Vz): 5.6V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 25 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: Mini MELF

封裝: DO-213AC, MINI-MELF, SOD-80

TS25PL05G D2G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 25A,

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600V
• Current - Average Rectified (Io): 25A
• Voltage - Forward (Vf) (Max) @ If: 920mV @ 12.5A
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, TS-6P
• Supplier Device Package: TS-6P

封裝: 4-SIP, TS-6P

TS8P05G D2G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 8A,

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, TS-6P
• Supplier Device Package: TS-6P

封裝: 4-SIP, TS-6P

MBRF16H45

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 45V 16A ITO220AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45 V
• Current - Average Rectified (Io): 16A
• Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 45 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack
• Supplier Device Package: ITO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

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TS35P07GH

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 1KV 35A TS-6P

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1 kV
• Current - Average Rectified (Io): 35 A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
• Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, TS-6P
• Supplier Device Package: TS-6P

封裝: -

RS2J

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 2A DO214AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 250 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 600 V
• Capacitance @ Vr, F: 50pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

RS5G-T-M6G

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 5A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 400 V
• Capacitance @ Vr, F: 57pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

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S12GC

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 12A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 12A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1 µA @ 400 V
• Capacitance @ Vr, F: 78pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

S1GFS

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 1A SOD128

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1 µA @ 400 V
• Capacitance @ Vr, F: 9pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: SOD-128
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

SS12LH

Taiwan Semiconductor Corporation

1A, 20V, SCHOTTKY RECTIFIER

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 400 µA @ 20 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: Sub SMA
• Operating Temperature - Junction: -55°C ~ 125°C

封裝: -

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1SMA5934H

Taiwan Semiconductor Corporation

DIODE ZENER 24V 1.5W DO214AC

• Voltage - Zener (Nom) (Vz): 24 V
• Tolerance: ±5%
• Power - Max: 1.5 W
• Impedance (Max) (Zzt): 19 Ohms
• Current - Reverse Leakage @ Vr: 500 nA @ 18.2 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

封裝: -

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1SMA5940H

Taiwan Semiconductor Corporation

DIODE ZENER 43V 1.5W DO214AC

• Voltage - Zener (Nom) (Vz): 43 V
• Tolerance: ±5%
• Power - Max: 1.5 W
• Impedance (Max) (Zzt): 53 Ohms
• Current - Reverse Leakage @ Vr: 500 nA @ 32.7 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

封裝: -

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HERAF1008G

Taiwan Semiconductor Corporation

DIODE GEN PURP 1KV 10A ITO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000 V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 80 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
• Capacitance @ Vr, F: 60pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack
• Supplier Device Package: ITO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

BZX55B5V1

Taiwan Semiconductor Corporation

DO-35, 500MW, 2%, SMALL SIGNAL Z

• Voltage - Zener (Nom) (Vz): 5.1 V
• Tolerance: ±2%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 35 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 1 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

封裝: -

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BZX55B2V7

Taiwan Semiconductor Corporation

DO-35, 500MW, 2%, SMALL SIGNAL Z

• Voltage - Zener (Nom) (Vz): 2.7 V
• Tolerance: ±2%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 85 Ohms
• Current - Reverse Leakage @ Vr: 10 µA @ 1 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

封裝: -

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SR1620PT

Taiwan Semiconductor Corporation

DIODE ARR SCHOTT 20V 16A TO247AD

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20 V
• Current - Average Rectified (Io) (per Diode): 16A (DC)
• Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 20 V
• Operating Temperature - Junction: -55°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (TO-3P)

封裝: -

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SF68G

Taiwan Semiconductor Corporation

DIODE GEN PURP 6A 600V DO-201AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 600 V
• Capacitance @ Vr, F: 50pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

HS2GAF-T

Taiwan Semiconductor Corporation

50NS, 2A, 400V, HIGH EFFICIENT R

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 400 V
• Capacitance @ Vr, F: 21pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-221AC, SMA Flat Leads
• Supplier Device Package: SMAF
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

BZD27C150PWH

Taiwan Semiconductor Corporation

DIODE ZENER 150V 1W SOD123W

• Voltage - Zener (Nom) (Vz): 150 V
• Tolerance: ±5%
• Power - Max: 1 W
• Impedance (Max) (Zzt): 300 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 110 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123W
• Supplier Device Package: SOD-123W

封裝: -

UDZS30B

Taiwan Semiconductor Corporation

SOD-323F, 200MW, 2%, SMALL SIGNA

• Voltage - Zener (Nom) (Vz): 30 V
• Tolerance: ±2%
• Power - Max: 200 mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 45 nA @ 23 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F

封裝: -

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