頁 34 - Taiwan Semiconductor Corporation 產品 | 黑森爾電子
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Taiwan Semiconductor Corporation 產品

記錄 4,299
頁  34/154
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BZD27C8V2P R3G
Taiwan Semiconductor Corporation

DIODE, ZENER, 8.2V, 1000MW, %, S

  • Voltage - Zener (Nom) (Vz): 8.2V
  • Tolerance: ±6.09%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 2 Ohms
  • Current - Reverse Leakage @ Vr: 10µA @ 3V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
封裝: DO-219AB
庫存2,720
BZD27C62PHRVG
Taiwan Semiconductor Corporation

DIODE, ZENER, 62V, 1000MW, %, AE

  • Voltage - Zener (Nom) (Vz): 62V
  • Tolerance: ±6.45%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 80 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 47V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
封裝: DO-219AB
庫存7,056
BZD27C180PHM2G
Taiwan Semiconductor Corporation

DIODE, ZENER, 180V, 1000MW, %, A

  • Voltage - Zener (Nom) (Vz): 179.5V
  • Tolerance: ±6.4%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 450 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 130V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
封裝: DO-219AB
庫存4,640
BZD27C180P M2G
Taiwan Semiconductor Corporation

DIODE, ZENER, 180V, 1000MW, %, S

  • Voltage - Zener (Nom) (Vz): 179.5V
  • Tolerance: ±6.4%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 450 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 130V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
封裝: DO-219AB
庫存2,640
BZD27C20P MQG
Taiwan Semiconductor Corporation

DIODE, ZENER, 20V, 1000MW, %, SU

  • Voltage - Zener (Nom) (Vz): 20V
  • Tolerance: ±6%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 15 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 15V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
封裝: DO-219AB
庫存2,304
1SMA5934 M2G
Taiwan Semiconductor Corporation

DIODE, ZENER, 24V, 1500MW, 5%, D

  • Voltage - Zener (Nom) (Vz): 24V
  • Tolerance: ±5%
  • Power - Max: 1.5W
  • Impedance (Max) (Zzt): 19 Ohms
  • Current - Reverse Leakage @ Vr: 500nA @ 18.2V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
封裝: DO-214AC, SMA
庫存3,056
1N4752G A0G
Taiwan Semiconductor Corporation

DIODE, ZENER, 33V, 1000MW, 5%, D

  • Voltage - Zener (Nom) (Vz): 33V
  • Tolerance: ±5%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 45 Ohms
  • Current - Reverse Leakage @ Vr: 5µA @ 25.1V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -65°C ~ 200°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
封裝: DO-204AL, DO-41, Axial
庫存3,344
BZT52B30S RRG
Taiwan Semiconductor Corporation

DIODE, ZENER, 30V, 200MW, 2%, SO

  • Voltage - Zener (Nom) (Vz): 30V
  • Tolerance: ±2%
  • Power - Max: 200mW
  • Impedance (Max) (Zzt): 80 Ohms
  • Current - Reverse Leakage @ Vr: 45nA @ 21V
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: SOD-323F
封裝: SC-90, SOD-323F
庫存7,840
BZT52C10-G RHG
Taiwan Semiconductor Corporation

DIODE, ZENER, 10V, 350MW, 5%, SO

  • Voltage - Zener (Nom) (Vz): 10V
  • Tolerance: ±5%
  • Power - Max: 350mW
  • Impedance (Max) (Zzt): 20 Ohms
  • Current - Reverse Leakage @ Vr: 200nA @ 7V
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
封裝: SOD-123
庫存3,424
BZX85C33 R0G
Taiwan Semiconductor Corporation

DIODE, ZENER, 33V, 1300MW, 5%, D

  • Voltage - Zener (Nom) (Vz): 33V
  • Tolerance: ±5%
  • Power - Max: 1.3W
  • Impedance (Max) (Zzt): 35 Ohms
  • Current - Reverse Leakage @ Vr: 500nA @ 24V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
封裝: DO-204AL, DO-41, Axial
庫存2,112
BZS55B13 RXG
Taiwan Semiconductor Corporation

DIODE, ZENER, 13V, 500MW, 2%, 12

  • Voltage - Zener (Nom) (Vz): 13V
  • Tolerance: ±2%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 26 Ohms
  • Current - Reverse Leakage @ Vr: 100nA @ 10V
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 1206 (3216 Metric)
  • Supplier Device Package: 1206
封裝: 1206 (3216 Metric)
庫存5,808
BZV55B24 L1G
Taiwan Semiconductor Corporation

DIODE, ZENER, 24V, 500MW, 2%, MM

  • Voltage - Zener (Nom) (Vz): 24V
  • Tolerance: ±2%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 80 Ohms
  • Current - Reverse Leakage @ Vr: 100nA @ 18V
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AC, MINI-MELF, SOD-80
  • Supplier Device Package: Mini MELF
封裝: DO-213AC, MINI-MELF, SOD-80
庫存2,976
BZX79C30 A0G
Taiwan Semiconductor Corporation

DIODE, ZENER, 30V, 500MW, 5%, DO

  • Voltage - Zener (Nom) (Vz): 30V
  • Tolerance: ±5%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 80 Ohms
  • Current - Reverse Leakage @ Vr: 50nA @ 21V
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100mA
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
封裝: DO-204AH, DO-35, Axial
庫存7,936
GBLA005HD2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 4A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
封裝: 4-SIP, GBL
庫存3,392
TS35P05GH
Taiwan Semiconductor Corporation

BRIDGE RECT 1P 600V 35A TS-6P

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 35 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
封裝: -
庫存3,600
DBLS103G
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 200V 1A DBLS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200 V
  • Current - Average Rectified (Io): 1 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Current - Reverse Leakage @ Vr: 2 µA @ 200 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DBLS
封裝: -
Request a Quote
MUR160AH
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 27pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
庫存15,000
RS2B
Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 2A DO214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
庫存17,970
KBU1005G
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 600V 10A KBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 10 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBU
  • Supplier Device Package: KBU
封裝: -
庫存384
TSM4425CS-RLG
Taiwan Semiconductor Corporation

MOSFET P-CH 30V 11A 8SOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 8 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封裝: -
Request a Quote
SS520ALH
Taiwan Semiconductor Corporation

5A, 200V, SCHOTTKY RECTIFIER

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Capacitance @ Vr, F: 100pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: Thin SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
Request a Quote
1PGSMA4745-R3G
Taiwan Semiconductor Corporation

DIODE ZENER 16V 1.25W DO214AC

  • Voltage - Zener (Nom) (Vz): 16 V
  • Tolerance: ±5%
  • Power - Max: 1.25 W
  • Impedance (Max) (Zzt): 16 Ohms
  • Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
封裝: -
庫存7,800
1PGSMB5928HR5G
Taiwan Semiconductor Corporation

DIODE ZENER 13V 3W DO214AA

  • Voltage - Zener (Nom) (Vz): 13 V
  • Tolerance: ±5%
  • Power - Max: 3 W
  • Impedance (Max) (Zzt): 7 Ohms
  • Current - Reverse Leakage @ Vr: 1 µA @ 9.9 V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
封裝: -
Request a Quote
M3Z4V3C-RRG
Taiwan Semiconductor Corporation

SOD-323F, 200MW, 5%, ZENER DIODE

  • Voltage - Zener (Nom) (Vz): 4.3 V
  • Tolerance: ±5%
  • Power - Max: 200 mW
  • Impedance (Max) (Zzt): 80 Ohms
  • Current - Reverse Leakage @ Vr: 5 µA @ 1 V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: SOD-323F
封裝: -
庫存9,000
SS24H
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 40V 2A DO214AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 125°C
封裝: -
庫存24,000
HER105G
Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
庫存44,955
1SMB5943
Taiwan Semiconductor Corporation

DIODE ZENER 56V 3W DO214AA

  • Voltage - Zener (Nom) (Vz): 56 V
  • Tolerance: ±5%
  • Power - Max: 3 W
  • Impedance (Max) (Zzt): 86 Ohms
  • Current - Reverse Leakage @ Vr: 1 µA @ 42.6 V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
封裝: -
Request a Quote
PU2DLWH
Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 2A SOD123W

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 200 V
  • Capacitance @ Vr, F: 33pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123W
  • Supplier Device Package: SOD-123W
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
庫存51,882