Rohm Semiconductor 產品

SP8J66TB1

Rohm Semiconductor

MOSFET 2P-CH 30V 9A 8SOIC

• FET Type: 2 P-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 9A
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

封裝: 8-SOIC (0.154", 3.90mm Width)

US6J11TR

Rohm Semiconductor

MOSFET 2P-CH 12V 1.3A TUMT6

• FET Type: 2 P-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 1.3A
• Rds On (Max) @ Id, Vgs: 260 mOhm @ 1.3A, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 6V
• Power - Max: 320mW
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: UMT6

封裝: 6-TSSOP, SC-88, SOT-363

BC858BT116

Rohm Semiconductor

TRANS PNP 30V 0.1A SST3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 30V
• Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 5V
• Power - Max: 350mW
• Frequency - Transition: 250MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SST3

封裝: TO-236-3, SC-59, SOT-23-3

IMX17T110

Rohm Semiconductor

TRANS 2NPN 50V 0.5A 6SMT

• Transistor Type: 2 NPN (Dual)
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
• Power - Max: 300mW
• Frequency - Transition: 250MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-74, SOT-457
• Supplier Device Package: SMT6

封裝: SC-74, SOT-457

MTZJT-727.5C

Rohm Semiconductor

DIODE ZENER 7.5V 500MW DO34

• Voltage - Zener (Nom) (Vz): 7.5V
• Tolerance: ±3%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 20 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 4V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: DO-204AG, DO-34, Axial
• Supplier Device Package: MSD

封裝: DO-204AG, DO-34, Axial

RR2L4STE25

Rohm Semiconductor

DIODE GEN PURP 400V 2A PMDS

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: PMDS
• Operating Temperature - Junction: 150°C (Max)

封裝: DO-214AC, SMA

BU5255HFV-TR

Rohm Semiconductor

IC COMPARATOR P-P HVSOF5

• Type: CMOS
• Number of Elements: 1
• Output Type: Push-Pull
• Voltage - Supply, Single/Dual (±): 1.8 V ~ 5.5 V, ±0.9 V ~ 2.75 V
• Voltage - Input Offset (Max): 6mV @ 3V
• Current - Input Bias (Max): 1pA (Typ)
• Current - Output (Typ): 5mA
• Current - Quiescent (Max): 15mA
• CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR
• Propagation Delay (Max): 1.6µs (Typ)
• Hysteresis: -
• Operating Temperature: -40°C ~ 85°C
• Package / Case: SOT-665
• Mounting Type: Surface Mount
• Supplier Device Package: HVSOF5

封裝: SOT-665

MNR35J5RJ222

Rohm Semiconductor

RES ARRAY 8 RES 2.2K OHM 2512

• Circuit Type: Bussed
• Resistance (Ohms): 2.2k
• Tolerance: ±5%
• Number of Resistors: 8
• Number of Pins: 10
• Power Per Element: 62.5mW
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Applications: Automotive AEC-Q200
• Mounting Type: Surface Mount
• Package / Case: 2512 (6432 Metric), Convex, Long Side Terminals
• Supplier Device Package: -
• Size / Dimension: 0.252" L x 0.122" W (6.40mm x 3.10mm)
• Height - Seated (Max): 0.026" (0.65mm)

封裝: 2512 (6432 Metric), Convex, Long Side Terminals

MCR18EZPF2941

Rohm Semiconductor

RES SMD 2.94K OHM 1% 1/4W 1206

• Resistance: 2.94 kOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: 1206 (3216 Metric)

MCR18EZPF11R8

Rohm Semiconductor

RES SMD 11.8 OHM 1% 1/4W 1206

• Resistance: 11.8 Ohms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: 1206 (3216 Metric)

MCR10EZHJ114

Rohm Semiconductor

RES SMD 110K OHM 5% 1/8W 0805

• Resistance: 110 kOhms
• Tolerance: ±5%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: 0805 (2012 Metric)

MCR10EZHF3921

Rohm Semiconductor

RES SMD 3.92K OHM 1% 1/8W 0805

• Resistance: 3.92 kOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: 0805 (2012 Metric)

MCR10EZHF1050

Rohm Semiconductor

RES SMD 105 OHM 1% 1/8W 0805

• Resistance: 105 Ohms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: 0805 (2012 Metric)

KTR03EZPF8203

Rohm Semiconductor

RES SMD 820K OHM 1% 1/10W 0603

• Resistance: 820 kOhms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: 0603 (1608 Metric)

KTR10EZPF1542

Rohm Semiconductor

RES SMD 15.4K OHM 1% 1/8W 0805

• Resistance: 15.4 kOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: 0805 (2012 Metric)

KTR10EZPF3922

Rohm Semiconductor

RES SMD 39.2K OHM 1% 1/8W 0805

• Resistance: 39.2 kOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: 0805 (2012 Metric)

MCR01MRTJ822

Rohm Semiconductor

RES SMD 8.2K OHM 5% 1/16W 0402

• Resistance: 8.2 kOhms
• Tolerance: ±5%
• Power (Watts): 0.063W, 1/16W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0402 (1005 Metric)
• Supplier Device Package: 0402
• Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
• Height - Seated (Max): 0.016" (0.40mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: 0402 (1005 Metric)

MCR006YRTJ181

Rohm Semiconductor

RES SMD 180 OHM 5% 1/20W 0201

• Resistance: 180 Ohms
• Tolerance: ±5%
• Power (Watts): 0.05W, 1/20W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 0201 (0603 Metric)
• Supplier Device Package: 0201
• Size / Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm)
• Height - Seated (Max): 0.010" (0.26mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: 0201 (0603 Metric)

MCR01MRTF1243

Rohm Semiconductor

RES SMD 124K OHM 1% 1/16W 0402

• Resistance: 124 kOhms
• Tolerance: ±1%
• Power (Watts): 0.063W, 1/16W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0402 (1005 Metric)
• Supplier Device Package: 0402
• Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
• Height - Seated (Max): 0.016" (0.40mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: 0402 (1005 Metric)

BR93H86RFJ-2CE2

Rohm Semiconductor

AUTOMOTIVE MICROWIRE BUS 16KBIT(

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 16Kb (1K x 16)
• Memory Interface: SPI
• Clock Frequency: 2MHz
• Write Cycle Time - Word, Page: 4ms
• Access Time: -
• Voltage - Supply: 2.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP-J

封裝: 8-SOIC (0.154", 3.90mm Width)

LM358F-E2

Rohm Semiconductor

IC COMP 2CH GRND SENSE SOP8

• Amplifier Type: General Purpose
• Number of Circuits: 2
• Output Type: -
• Slew Rate: 0.3V/µs
• Gain Bandwidth Product: 800kHz
• -3db Bandwidth: -
• Current - Input Bias: 20nA
• Voltage - Input Offset: 1mV
• Current - Supply: 600µA
• Current - Output / Channel: 30mA
• Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.173", 4.40mm Width)
• Supplier Device Package: 8-SOP

封裝: 8-SOIC (0.173", 4.40mm Width)

RD3L07BATTL1

Rohm Semiconductor

PCH -60V -70A POWER MOSFET - RD3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 101W (Tc)
• Rds On (Max) @ Id, Vgs: 12.7mOhm @ 70A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封裝: -

BR24H256NUX-5ACTR

Rohm Semiconductor

IC EEPROM 256KBIT I2C 8VSON

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 256Kbit
• Memory Interface: I2C
• Clock Frequency: 1 MHz
• Write Cycle Time - Word, Page: 3.5ms
• Access Time: -
• Voltage - Supply: 1.7V ~ 5.5V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-UFDFN Exposed Pad
• Supplier Device Package: VSON008X2030

封裝: -

RBR30NS30AFHTL

Rohm Semiconductor

DIODE ARRAY SCHOTT 30V 30A LPDS

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io) (per Diode): 30A
• Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 300 µA @ 30 V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: LPDS

封裝: -

KDZVTR3-3B

Rohm Semiconductor

DIODE ZENER 3.5V 1W PMDU

• Voltage - Zener (Nom) (Vz): 3.5 V
• Tolerance: ±6.06%
• Power - Max: 1 W
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: 80 µA @ 1 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: PMDU

封裝: -

BD450S2FP3-CE2

Rohm Semiconductor

AUTOMOTIVE 200MA 5.0V, FIXED OUT

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 42V
• Voltage - Output (Min/Fixed): 5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.35V @ 100mA
• Current - Output: 200mA
• Current - Quiescent (Iq): 90 µA
• Current - Supply (Max): 150 µA
• PSRR: 65dB (120Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223-4

封裝: -

RGS30TSX2HRC11

Rohm Semiconductor

IGBT TRENCH FLD 1200V 30A TO247N

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 30 A
• Current - Collector Pulsed (Icm): 45 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
• Power - Max: 267 W
• Switching Energy: 740µJ (on), 600µJ (off)
• Input Type: Standard
• Gate Charge: 41 nC
• Td (on/off) @ 25°C: 30ns/70ns
• Test Condition: 600V, 15A, 10Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247N

封裝: -

RGS50TSX2DHRC11

Rohm Semiconductor

IGBT TRENCH FLD 1200V 50A TO247N

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 50 A
• Current - Collector Pulsed (Icm): 75 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
• Power - Max: 395 W
• Switching Energy: 1.4mJ (on), 1.65mJ (off)
• Input Type: Standard
• Gate Charge: 67 nC
• Td (on/off) @ 25°C: 37ns/140ns
• Test Condition: 600V, 25A, 10Ohm, 15V
• Reverse Recovery Time (trr): 182 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247N

封裝: -