Rohm Semiconductor 產品

SP8M3FU6TB

Rohm Semiconductor

MOSFET N/P-CH 30V 5A/4.5A 8SOIC

• FET Type: N and P-Channel
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 5A, 4.5A
• Rds On (Max) @ Id, Vgs: 51 mOhm @ 5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
• Power - Max: 2W
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

封裝: 8-SOIC (0.154", 3.90mm Width)

2SC4115STPQ

Rohm Semiconductor

TRANS NPN 20V 2A 3-PIN SPT

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 20V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
• Power - Max: 400mW
• Frequency - Transition: 290MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: SC-72 Formed Leads
• Supplier Device Package: SPT

封裝: SC-72 Formed Leads

2SD2142KT146

Rohm Semiconductor

TRANS NPN DARL 30V 0.3A SOT23-3

• Transistor Type: NPN - Darlington
• Current - Collector (Ic) (Max): 300mA
• Voltage - Collector Emitter Breakdown (Max): 30V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
• Power - Max: 200mW
• Frequency - Transition: 200MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SMT3

封裝: TO-236-3, SC-59, SOT-23-3

DTA023JEBTL

Rohm Semiconductor

TRANS PREBIAS PNP 50V 0.15W SC89

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 2.2k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
• Current - Collector Cutoff (Max): -
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SC-89, SOT-490
• Supplier Device Package: EMT3F (SOT-416FL)

封裝: SC-89, SOT-490

RLZTE-1110A

Rohm Semiconductor

DIODE ZENER 9.7V 500MW LLDS

• Voltage - Zener (Nom) (Vz): 9.7V
• Tolerance: ±3%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 8 Ohms
• Current - Reverse Leakage @ Vr: 200nA @ 7V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: LLDS

封裝: DO-213AC, MINI-MELF, SOD-80

MTZJT-777.5C

Rohm Semiconductor

DIODE ZENER 7.5V 500MW MSD

• Voltage - Zener (Nom) (Vz): 7.5V
• Tolerance: ±3%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 20 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 4V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: DO-204AG, DO-34, Axial
• Supplier Device Package: MSD

封裝: DO-204AG, DO-34, Axial

BU30UA3WNVX-TL

Rohm Semiconductor

IC REG LIN 3V 300MA SSON004X1010

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.22V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 90µA
• PSRR: 70dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-UDFN Exposed Pad
• Supplier Device Package: SSON004X1010

封裝: 4-UDFN Exposed Pad

BU4837FVE-TR

Rohm Semiconductor

IC VOLT DETECTOR STD 5-VSOF

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Open Drain or Open Collector
• Reset: Active High/Active Low
• Reset Timeout: -
• Voltage - Threshold: 3.7V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SOT-665
• Supplier Device Package: 5-VSOF

封裝: SOT-665

MCR18ERTF3242

Rohm Semiconductor

RES SMD 32.4K OHM 1% 1/4W 1206

• Resistance: 32.4 kOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.120" L x 0.061" W (3.05mm x 1.55mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: 1206 (3216 Metric)

MCR25JZHF1543

Rohm Semiconductor

RES SMD 154K OHM 1% 1/4W 1210

• Resistance: 154 kOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1210 (3225 Metric)
• Supplier Device Package: 1210
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: 1210 (3225 Metric)

MCR50JZHJLR39

Rohm Semiconductor

RES SMD 0.39 OHM 5% 1/2W 2010

• Resistance: 390 mOhms
• Tolerance: ±5%
• Power (Watts): 0.5W, 1/2W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 2010 (5025 Metric)
• Supplier Device Package: 2010
• Size / Dimension: 0.197" L x 0.098" W (5.00mm x 2.50mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: 2010 (5025 Metric)

MCR18EZPF5230

Rohm Semiconductor

RES SMD 523 OHM 1% 1/4W 1206

• Resistance: 523 Ohms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: 1206 (3216 Metric)

LTR50UZPJ334

Rohm Semiconductor

RES SMD 330K OHM 1W 2010 WIDE

• Resistance: 330 kOhms
• Tolerance: ±5%
• Power (Watts): 1W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: Wide 2010 (5025 Metric), 1020
• Supplier Device Package: 2010
• Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: Wide 2010 (5025 Metric), 1020

KTR10EZPJ2R7

Rohm Semiconductor

RES SMD 2.7 OHM 5% 1/8W 0805

• Resistance: 2.7 Ohms
• Tolerance: ±5%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: 0805 (2012 Metric)

MCR25JZHJ162

Rohm Semiconductor

RES SMD 1.6K OHM 5% 1/4W 1210

• Resistance: 1.6 kOhms
• Tolerance: ±5%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1210 (3225 Metric)
• Supplier Device Package: 1210
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: 1210 (3225 Metric)

MCR18ERTF9760

Rohm Semiconductor

RES SMD 976 OHM 1% 1/4W 1206

• Resistance: 976 Ohms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.120" L x 0.061" W (3.05mm x 1.55mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: 1206 (3216 Metric)

MCR18ERTF2154

Rohm Semiconductor

RES SMD 2.15M OHM 1% 1/4W 1206

• Resistance: 2.15 MOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.120" L x 0.061" W (3.05mm x 1.55mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: 1206 (3216 Metric)

MCR10ERTF3000

Rohm Semiconductor

RES SMD 300 OHM 1% 1/8W 0805

• Resistance: 300 Ohms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: 0805 (2012 Metric)

TRR03EZPF1210

Rohm Semiconductor

RES SMD 121 OHM 1% 1/10W 0603

• Resistance: 121 Ohms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Anti-Sulfur
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: 0603 (1608 Metric)

BR93H56RFJ-WCE2

Rohm Semiconductor

EEPROMS MICROWIRE SERIAL BUS, HI

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 2Kb (128 x 16)
• Memory Interface: SPI
• Clock Frequency: 1.25MHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: -
• Voltage - Supply: 2.7 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP-J

封裝: 8-SOIC (0.154", 3.90mm Width)

BD48L49G-TL

Rohm Semiconductor

STANDARD VOLTAGE DETECTORS

• Type: Voltage Detector
• Number of Voltages Monitored: 1
• Output: Open Drain or Open Collector
• Reset: Active Low
• Reset Timeout: -
• Voltage - Threshold: 4.9V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: 3-SSOP

封裝: TO-236-3, SC-59, SOT-23-3

LM324F-E2

Rohm Semiconductor

IC OP AMP GRND SENSE SOP14

• Amplifier Type: General Purpose
• Number of Circuits: 4
• Output Type: -
• Slew Rate: 0.3V/µs
• Gain Bandwidth Product: 800kHz
• -3db Bandwidth: -
• Current - Input Bias: 20nA
• Voltage - Input Offset: 1mV
• Current - Supply: 1mA
• Current - Output / Channel: 30mA
• Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 14-SOIC (0.173", 4.40mm Width)
• Supplier Device Package: 14-SOP

封裝: 14-SOIC (0.173", 4.40mm Width)

BA82903YFVM-CTR

Rohm Semiconductor

IC COMPARATOR 2 GEN PUR 8MSOP

• Type: General Purpose
• Number of Elements: 2
• Output Type: Open-Collector
• Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
• Voltage - Input Offset (Max): 5mV @ 5V
• Current - Input Bias (Max): 0.25µA @ 5V
• Current - Output (Typ): 16mA @ 5V
• Current - Quiescent (Max): 1mA
• CMRR, PSRR (Typ): -
• Propagation Delay (Max): 400ns (Typ)
• Hysteresis: -
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-MSOP

封裝: -

DTA113ZMT2L

Rohm Semiconductor

TRANS PREBIAS PNP 50V 0.1A VMT3

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 1 kOhms
• Resistor - Emitter Base (R2) (Ohms): 10 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250 MHz
• Power - Max: 150 mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Supplier Device Package: VMT3

封裝: -

TLR376YG-CTR

Rohm Semiconductor

TLR SERIES, AUTOMOTIVE HIGH PREC

• Amplifier Type: CMOS
• Number of Circuits: 1
• Output Type: Push-Pull, Rail-to-Rail
• Slew Rate: 2V/µs
• Gain Bandwidth Product: 4 MHz
• -3db Bandwidth: -
• Current - Input Bias: 0.5 pA
• Voltage - Input Offset: 1.7 µV
• Current - Supply: 645µA
• Current - Output / Channel: 50 mA
• Voltage - Supply, Single/Dual (±): -
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: 5-SSOP

封裝: -

RD3L07BBGTL1

Rohm Semiconductor

NCH 60V 115A, TO-252, POWER MOSF

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 102W (Tc)
• Rds On (Max) @ Id, Vgs: 3.9mOhm @ 70A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封裝: -

RD3H200SNTL1

Rohm Semiconductor

MOSFET N-CH 45V 20A TO252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 45 V
• Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
• Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 20W (Tc)
• Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封裝: -

SCT4062KWAHRTL

Rohm Semiconductor

1200V, 24A, 7-PIN SMD, TRENCH-ST

• FET Type: N-Channel
• Technology: SiC (Silicon Carbide Junction Transistor)
• Drain to Source Voltage (Vdss): 1200 V
• Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 18V
• Vgs(th) (Max) @ Id: 4.8V @ 6.45mA
• Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V
• Vgs (Max): +21V, -4V
• FET Feature: -
• Power Dissipation (Max): 93W
• Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263-7LA
• Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

封裝: -

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