頁 62 - ON Semiconductor 產品 - 電晶體 - FET、MOSFET - 單 | 黑森爾電子
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ON Semiconductor 產品 - 電晶體 - FET、MOSFET - 單

記錄 2,260
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零件編號
製造商
描述
封裝
庫存
數量
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
NTMFS4849NT3G
ON Semiconductor

MOSFET N-CH 30V 10.2A SO-8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 71A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 12V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 870mW (Ta), 42.4W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
封裝: 8-PowerTDFN, 5 Leads
庫存3,312
MOSFET (Metal Oxide)
30V
10.2A (Ta), 71A (Tc)
4.5V, 11.5V
2.5V @ 250µA
22nC @ 4.5V
2040pF @ 12V
±16V
-
870mW (Ta), 42.4W (Tc)
5.1 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
hot NTMFS4849NT1G
ON Semiconductor

MOSFET N-CH 30V 10.2A SO-8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 71A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 12V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 870mW (Ta), 42.4W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
封裝: 8-PowerTDFN, 5 Leads
庫存14,016
MOSFET (Metal Oxide)
30V
10.2A (Ta), 71A (Tc)
4.5V, 11.5V
2.5V @ 250µA
22nC @ 4.5V
2040pF @ 12V
±16V
-
870mW (Ta), 42.4W (Tc)
5.1 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
NTMFS4847NT3G
ON Semiconductor

MOSFET N-CH 30V 11.5A SO-8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 85A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2614pF @ 12V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 880mW (Ta), 48.4W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
封裝: 8-PowerTDFN, 5 Leads
庫存3,072
MOSFET (Metal Oxide)
30V
11.5A (Ta), 85A (Tc)
4.5V, 11.5V
2.5V @ 250µA
28nC @ 4.5V
2614pF @ 12V
±16V
-
880mW (Ta), 48.4W (Tc)
4.1 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
hot NTMFS4847NT1G
ON Semiconductor

MOSFET N-CH 30V 11.5A SO-8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 85A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2614pF @ 12V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 880mW (Ta), 48.4W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
封裝: 8-PowerTDFN, 5 Leads
庫存152,832
MOSFET (Metal Oxide)
30V
11.5A (Ta), 85A (Tc)
4.5V, 11.5V
2.5V @ 250µA
28nC @ 4.5V
2614pF @ 12V
±16V
-
880mW (Ta), 48.4W (Tc)
4.1 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
hot NTMFS4846NT3G
ON Semiconductor

MOSFET N-CH 30V 12.7A SO-8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 53nC @ 11.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 890mW (Ta), 55.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
封裝: 8-PowerTDFN, 5 Leads
庫存5,664
MOSFET (Metal Oxide)
30V
12.7A (Ta), 100A (Tc)
4.5V, 11.5V
2.5V @ 250µA
53nC @ 11.5V
3250pF @ 12V
±20V
-
890mW (Ta), 55.5W (Tc)
3.4 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
NTMFS4845NT3G
ON Semiconductor

MOSFET N-CH 30V 13.7A SO-8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta), 115A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 62nC @ 11.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 12V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 890mW (Ta), 62.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
封裝: 8-PowerTDFN, 5 Leads
庫存5,328
MOSFET (Metal Oxide)
30V
13.7A (Ta), 115A (Tc)
4.5V, 10V
2.5V @ 250µA
62nC @ 11.5V
3720pF @ 12V
±16V
-
890mW (Ta), 62.5W (Tc)
2.9 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
hot NTMFS4821NT3G
ON Semiconductor

MOSFET N-CH 30V 8.8A SO-8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 58.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 870mW (Ta), 38.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.95 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
封裝: 8-PowerTDFN, 5 Leads
庫存6,848
MOSFET (Metal Oxide)
30V
8.8A (Ta), 58.5A (Tc)
4.5V, 10V
2.5V @ 250µA
16nC @ 4.5V
1400pF @ 12V
±20V
-
870mW (Ta), 38.5W (Tc)
6.95 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
NTK3043NAT5G
ON Semiconductor

MOSFET N-CH 20V 210MA SOT-723

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.65V, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 310mW (Ta)
  • Rds On (Max) @ Id, Vgs: 3.4 Ohm @ 10mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-723
  • Package / Case: SOT-723
封裝: SOT-723
庫存4,128
MOSFET (Metal Oxide)
20V
210mA (Ta)
1.65V, 4.5V
1.3V @ 250µA
-
11pF @ 10V
±10V
-
310mW (Ta)
3.4 Ohm @ 10mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-723
SOT-723
NTHS5441PT1G
ON Semiconductor

MOSFET P-CH 20V 3.9A CHIPFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 5V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 46 mOhm @ 3.9A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ChipFET?
  • Package / Case: 8-SMD, Flat Lead
封裝: 8-SMD, Flat Lead
庫存2,880
MOSFET (Metal Oxide)
20V
3.9A (Ta)
-
1.2V @ 250µA
22nC @ 4.5V
710pF @ 5V
-
-
1.3W (Ta)
46 mOhm @ 3.9A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
ChipFET?
8-SMD, Flat Lead
NTHD2110TT1G
ON Semiconductor

MOSFET P-CH 12V 4.5A CHIPFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 850mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1072pF @ 6V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 6.4A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ChipFET?
  • Package / Case: 8-SMD, Flat Lead
封裝: 8-SMD, Flat Lead
庫存4,896
MOSFET (Metal Oxide)
12V
4.5A (Ta)
1.8V, 4.5V
850mV @ 250µA
14nC @ 4.5V
1072pF @ 6V
±8V
-
1.1W (Ta)
40 mOhm @ 6.4A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
ChipFET?
8-SMD, Flat Lead
hot NTGD3147FT1G
ON Semiconductor

MOSFET P-CH 20V 2.2A 6-TSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 145 mOhm @ 2.2A, 4.5V
  • Operating Temperature: -25°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6
封裝: SOT-23-6
庫存324,000
MOSFET (Metal Oxide)
20V
2.2A (Ta)
2.5V, 4.5V
1.5V @ 250µA
5.5nC @ 4.5V
400pF @ 10V
±12V
Schottky Diode (Isolated)
1W (Ta)
145 mOhm @ 2.2A, 4.5V
-25°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6
NTD4804NAT4G
ON Semiconductor

MOSFET N-CH 30V 14.5A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 124A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4490pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.43W (Ta), 93.75W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存5,760
MOSFET (Metal Oxide)
30V
14.5A (Ta), 124A (Tc)
4.5V, 11.5V
2.5V @ 250µA
40nC @ 4.5V
4490pF @ 12V
±20V
-
1.43W (Ta), 93.75W (Tc)
4 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTMS4872NR2G
ON Semiconductor

MOSFET N-CH 30V 6A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 10.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 820mW (Ta)
  • Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 10.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存570,708
MOSFET (Metal Oxide)
30V
6A (Ta), 10.2A (Tc)
4.5V, 10V
2.5V @ 250µA
15nC @ 4.5V
1700pF @ 15V
±20V
-
820mW (Ta)
13.5 mOhm @ 10.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
hot NTMS4176PR2G
ON Semiconductor

MOSFET P-CH 30V 5.5A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 24V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 810mW (Ta)
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 9.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存937,548
MOSFET (Metal Oxide)
30V
5.5A (Ta)
4.5V, 10V
2.5V @ 250µA
17nC @ 4.5V
1720pF @ 24V
±25V
-
810mW (Ta)
18 mOhm @ 9.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
hot NTMD4884NFR2G
ON Semiconductor

MOSFET N-CH 30V 3.3A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 770mW (Ta)
  • Rds On (Max) @ Id, Vgs: 48 mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存71,808
MOSFET (Metal Oxide)
30V
3.3A (Ta)
4.5V, 10V
2.5V @ 250µA
4.2nC @ 4.5V
360pF @ 15V
±20V
Schottky Diode (Isolated)
770mW (Ta)
48 mOhm @ 4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
hot NTGD4169FT1G
ON Semiconductor

MOSFET N-CH 30V 2.6A 6-TSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 900mW (Ta)
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.6A, 4.5V
  • Operating Temperature: -25°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6
封裝: SOT-23-6
庫存360,012
MOSFET (Metal Oxide)
30V
2.6A (Ta)
2.5V, 4.5V
1.5V @ 250µA
5.5nC @ 4.5V
295pF @ 15V
±12V
Schottky Diode (Isolated)
900mW (Ta)
90 mOhm @ 2.6A, 4.5V
-25°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6
hot NTF2955PT1G
ON Semiconductor

MOSFET P-CH 60V 1.7A SOT-223

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 492pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 185 mOhm @ 2.4A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
封裝: TO-261-4, TO-261AA
庫存120,636
MOSFET (Metal Oxide)
60V
1.7A (Ta)
10V
4V @ 1mA
14.3nC @ 10V
492pF @ 25V
±20V
-
1W (Ta)
185 mOhm @ 2.4A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
hot NTD4863NAT4G
ON Semiconductor

MOSFET N-CH 25V 9.2A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 12V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 1.27W (Ta), 36.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存253,140
MOSFET (Metal Oxide)
25V
9.2A (Ta), 49A (Tc)
-
2.5V @ 250µA
13.5nC @ 4.5V
990pF @ 12V
-
-
1.27W (Ta), 36.6W (Tc)
9.3 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTD4860NAT4G
ON Semiconductor

MOSFET N-CH 25V 10.4A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 65A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1308pF @ 12V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 1.28W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存196,764
MOSFET (Metal Oxide)
25V
10.4A (Ta), 65A (Tc)
-
2.5V @ 250µA
16.5nC @ 4.5V
1308pF @ 12V
-
-
1.28W (Ta), 50W (Tc)
7.5 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTD4857NAT4G
ON Semiconductor

MOSFET N-CH 25V 12A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 78A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 12V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存120,012
MOSFET (Metal Oxide)
25V
12A (Ta), 78A (Tc)
-
2.5V @ 250µA
24nC @ 4.5V
1960pF @ 12V
-
-
-
5.7 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
NTD3817NT4G
ON Semiconductor

MOSFET N-CH 16V 7.6A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 16V
  • Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 34.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 702pF @ 12V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta), 25.9W (Tc)
  • Rds On (Max) @ Id, Vgs: 13.9 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存5,248
MOSFET (Metal Oxide)
16V
7.6A (Ta), 34.5A (Tc)
4.5V, 10V
2.5V @ 250µA
10.5nC @ 4.5V
702pF @ 12V
±16V
-
1.2W (Ta), 25.9W (Tc)
13.9 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
NTD3817N-35G
ON Semiconductor

MOSFET N-CH 16V 7.6A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 16V
  • Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 34.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 702pF @ 12V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta), 25.9W (Tc)
  • Rds On (Max) @ Id, Vgs: 13.9 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Stub Leads, IPak
封裝: TO-251-3 Stub Leads, IPak
庫存2,992
MOSFET (Metal Oxide)
16V
7.6A (Ta), 34.5A (Tc)
4.5V, 10V
2.5V @ 250µA
10.5nC @ 4.5V
702pF @ 12V
±16V
-
1.2W (Ta), 25.9W (Tc)
13.9 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Stub Leads, IPak
NTD3817N-1G
ON Semiconductor

MOSFET N-CH 16V 7.6A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 16V
  • Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 34.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 702pF @ 12V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta), 25.9W (Tc)
  • Rds On (Max) @ Id, Vgs: 13.9 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封裝: TO-251-3 Short Leads, IPak, TO-251AA
庫存2,992
MOSFET (Metal Oxide)
16V
7.6A (Ta), 34.5A (Tc)
4.5V, 10V
2.5V @ 250µA
10.5nC @ 4.5V
702pF @ 12V
±16V
-
1.2W (Ta), 25.9W (Tc)
13.9 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
NTD3813NT4G
ON Semiconductor

MOSFET N-CH 16V 9.6A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 16V
  • Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 51A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 963pF @ 12V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta), 34.9W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.75 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存2,112
MOSFET (Metal Oxide)
16V
9.6A (Ta), 51A (Tc)
4.5V, 10V
2.5V @ 250µA
12.8nC @ 4.5V
963pF @ 12V
±16V
-
1.2W (Ta), 34.9W (Tc)
8.75 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
NTD3813N-35G
ON Semiconductor

MOSFET N-CH 16V 9.6A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 16V
  • Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 51A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 963pF @ 12V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta), 34.9W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.75 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Stub Leads, IPak
封裝: TO-251-3 Stub Leads, IPak
庫存3,712
MOSFET (Metal Oxide)
16V
9.6A (Ta), 51A (Tc)
4.5V, 10V
2.5V @ 250µA
12.8nC @ 4.5V
963pF @ 12V
±16V
-
1.2W (Ta), 34.9W (Tc)
8.75 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Stub Leads, IPak
NTD3813N-1G
ON Semiconductor

MOSFET N-CH 16V 9.6A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 16V
  • Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 51A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 963pF @ 12V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta), 34.9W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.75 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封裝: TO-251-3 Short Leads, IPak, TO-251AA
庫存6,112
MOSFET (Metal Oxide)
16V
9.6A (Ta), 51A (Tc)
4.5V, 10V
2.5V @ 250µA
12.8nC @ 4.5V
963pF @ 12V
±16V
-
1.2W (Ta), 34.9W (Tc)
8.75 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
hot NTD3808NT4G
ON Semiconductor

MOSFET N-CH 16V 12A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 16V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 76A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 12V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta), 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存120,048
MOSFET (Metal Oxide)
16V
12A (Ta), 76A (Tc)
4.5V, 10V
2.5V @ 250µA
21nC @ 4.5V
1660pF @ 12V
±16V
-
1.3W (Ta), 52W (Tc)
5.8 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
NTD3808N-35G
ON Semiconductor

MOSFET N-CH 16V 12A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 16V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 76A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 12V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta), 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Stub Leads, IPak
封裝: TO-251-3 Stub Leads, IPak
庫存4,512
MOSFET (Metal Oxide)
16V
12A (Ta), 76A (Tc)
4.5V, 10V
2.5V @ 250µA
21nC @ 4.5V
1660pF @ 12V
±16V
-
1.3W (Ta), 52W (Tc)
5.8 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Stub Leads, IPak