Nexperia USA Inc. 產品

PMCM650VNE/S500Z

Nexperia USA Inc.

MOSFET SS

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封裝: -

PH4030AL,115

Nexperia USA Inc.

MOSFET N-CH 30V 100A LFPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 2.15V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 36.6nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2090pF @ 12V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 4 mOhm @ 15A, 10V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: LFPAK56, Power-SO8
• Package / Case: SC-100, SOT-669

封裝: SC-100, SOT-669

PBSS302NDH

Nexperia USA Inc.

TRANS NPN 40V 4A 6TSOP

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 4A
• Voltage - Collector Emitter Breakdown (Max): 40V
• Vce Saturation (Max) @ Ib, Ic: 450mV @ 600mA, 6A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2A, 2V
• Power - Max: 360mW
• Frequency - Transition: 150MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-74, SOT-457
• Supplier Device Package: 6-TSOP

封裝: SC-74, SOT-457

PDTC143ZT,235

Nexperia USA Inc.

TRANS PREBIAS NPN 250MW TO236AB

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 1µA
• Frequency - Transition: 230MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB (SOT23)

封裝: TO-236-3, SC-59, SOT-23-3

PDZ2.7B,135

Nexperia USA Inc.

DIODE ZENER 2.7V 400MW SOD323

• Voltage - Zener (Nom) (Vz): 2.7V
• Tolerance: ±2%
• Power - Max: 400mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 20µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

封裝: SC-76, SOD-323

BZV55-B8V2,115

Nexperia USA Inc.

DIODE ZENER 8.2V 500MW SOD80C

• Voltage - Zener (Nom) (Vz): 8.2V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 700nA @ 5V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 200°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: SOD-80C

封裝: DO-213AC, MINI-MELF, SOD-80

BZV55-C16,115

Nexperia USA Inc.

DIODE ZENER 16V 500MW SOD80C

• Voltage - Zener (Nom) (Vz): 16V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 40 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 11.2V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 200°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: SOD-80C

封裝: DO-213AC, MINI-MELF, SOD-80

BZV55-C36,115

Nexperia USA Inc.

DIODE ZENER 36V 500MW SOD80C

• Voltage - Zener (Nom) (Vz): 36V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 90 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 25.2V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 200°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: SOD-80C

封裝: DO-213AC, MINI-MELF, SOD-80

BAT54AWF

Nexperia USA Inc.

BAT54AW/SOT323/SC-70

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

封裝: -

BAS16QAZ

Nexperia USA Inc.

DIODE GP 100V 290MA DFN1010D-3

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 290mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 3-XDFN
• Supplier Device Package: DFN1010D-3
• Operating Temperature - Junction: 150°C (Max)

封裝: 3-XDFN

74HCT280D,652

Nexperia USA Inc.

IC 9-BIT GEN/CHKER 14SO

• Logic Type: Parity Generator/Checker
• Number of Circuits: 9-Bit
• Current - Output High, Low: -
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 14-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 14-SO

封裝: 14-SOIC (0.154", 3.90mm Width)

74ALVC373D,118

Nexperia USA Inc.

IC OCT D TRANSP LTCH 3ST 20SOIC

• Logic Type: D-Type Transparent Latch
• Circuit: 8:8
• Output Type: Tri-State
• Voltage - Supply: 1.65 V ~ 3.6 V
• Independent Circuits: 1
• Delay Time - Propagation: 2.2ns
• Current - Output High, Low: 24mA, 24mA
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 20-SO

封裝: 20-SOIC (0.295", 7.50mm Width)

74HCT373D,653

Nexperia USA Inc.

IC LATCH TRANSP OCT D 3ST 20SOIC

• Logic Type: D-Type Transparent Latch
• Circuit: 8:8
• Output Type: Tri-State
• Voltage - Supply: 4.5 V ~ 5.5 V
• Independent Circuits: 1
• Delay Time - Propagation: 14ns
• Current - Output High, Low: 6mA, 6mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 20-SO

封裝: 20-SOIC (0.295", 7.50mm Width)

74AHC1G00GW,125

Nexperia USA Inc.

IC GATE NAND 1CH 2-INP 5-TSSOP

• Logic Type: NAND Gate
• Number of Circuits: 1
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 2 V ~ 5.5 V
• Current - Quiescent (Max): 1µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.5 V ~ 1.65 V
• Logic Level - High: 1.5 V ~ 3.85 V
• Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 5-TSSOP
• Package / Case: 5-TSSOP, SC-70-5, SOT-353

封裝: 5-TSSOP, SC-70-5, SOT-353

74AUP1G79GF,132

Nexperia USA Inc.

IC D-TYPE POS TRG SNGL 6XSON

• Function: Standard
• Type: D-Type
• Output Type: Non-Inverted
• Number of Elements: 1
• Number of Bits per Element: 1
• Clock Frequency: 309MHz
• Max Propagation Delay @ V, Max CL: 5.8ns @ 3.3V, 30pF
• Trigger Type: Positive Edge
• Current - Output High, Low: 4mA, 4mA
• Voltage - Supply: 0.8 V ~ 3.6 V
• Current - Quiescent (Iq): 500nA
• Input Capacitance: 0.8pF
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 6-XFDFN

封裝: 6-XFDFN

BZA968A,115

Nexperia USA Inc.

TVS DIODE 6.8VWM SOT665

• Type: Zener
• Unidirectional Channels: 4
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 6.8V
• Voltage - Breakdown (Min): -
• Voltage - Clamping (Max) @ Ipp: -
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: 14W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 90pF @ 1MHz
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: SOT-665
• Supplier Device Package: SOT-665

封裝: SOT-665

NCR320UX

Nexperia USA Inc.

250 MA LED DRIVER IN SOT457

• Type: Linear
• Topology: Shift Register
• Internal Switch(s): Yes
• Number of Outputs: 1
• Voltage - Supply (Min): -
• Voltage - Supply (Max): 16V
• Voltage - Output: 16V
• Current - Output / Channel: 250mA
• Frequency: -
• Dimming: PWM
• Applications: Automotive
• Operating Temperature: -55°C ~ 150°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SC-74, SOT-457
• Supplier Device Package: 6-TSOP

封裝: SC-74, SOT-457

BZX84W-C75X

Nexperia USA Inc.

DIODE ZENER 75V 275MW SOT323

• Voltage - Zener (Nom) (Vz): 75 V
• Tolerance: ±5%
• Power - Max: 275 mW
• Impedance (Max) (Zzt): 255 Ohms
• Current - Reverse Leakage @ Vr: 50 nA @ 52.2 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

封裝: -

MM3Z16VT1GX

Nexperia USA Inc.

VOLTAGE REGULATOR DIODES

• Voltage - Zener (Nom) (Vz): 16 V
• Tolerance: ±5%
• Power - Max: 300 mW
• Impedance (Max) (Zzt): 20 Ohms
• Current - Reverse Leakage @ Vr: 50 nA @ 12 V
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

封裝: -

MJD148-QJ

Nexperia USA Inc.

TRANS NPN 45V 4A DPAK

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 4 A
• Voltage - Collector Emitter Breakdown (Max): 45 V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
• Current - Collector Cutoff (Max): 1µA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
• Power - Max: 1.6 W
• Frequency - Transition: 3MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: DPAK

封裝: -

PUMD6H-QF

Nexperia USA Inc.

PUMD6H-QF

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7kOhms
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 100nA
• Frequency - Transition: 230MHz, 180MHz
• Power - Max: 240mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: 6-TSSOP

封裝: -

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PMEG100T200ELPEZ

Nexperia USA Inc.

DIODE SCHOTTKY 100V 20A CFP15B

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 55 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 100 V
• Capacitance @ Vr, F: 1600pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: CFP15B
• Operating Temperature - Junction: 175°C

封裝: -

BAT46GW-QJ

Nexperia USA Inc.

BAT46GW-Q/SOD123/SOD2

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 250mA
• Voltage - Forward (Vf) (Max) @ If: 850 mV @ 250 mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 5.9 ns
• Current - Reverse Leakage @ Vr: 9 µA @ 100 V
• Capacitance @ Vr, F: 39pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123
• Operating Temperature - Junction: 150°C

封裝: -

Request a Quote

PSMN3R2-40YLDX

Nexperia USA Inc.

MOSFET N-CH 40V 120A LFPAK56

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.05V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4103 pF @ 20 V
• Vgs (Max): ±20V
• FET Feature: Schottky Diode (Body)
• Power Dissipation (Max): 115W (Ta)
• Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LFPAK56, Power-SO8
• Package / Case: SC-100, SOT-669

封裝: -

BZX585-C13F

Nexperia USA Inc.

BZX585-C13/SOD523/SC-79

• Voltage - Zener (Nom) (Vz): 13 V
• Tolerance: ±5%
• Power - Max: 300 mW
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 100 µA @ 8 V
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523

封裝: -

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PSMP160-100YSX

Nexperia USA Inc.

MOSFET P-CH 100V LFPAK

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封裝: -

Request a Quote

BUK6D22-30EX

Nexperia USA Inc.

MOSFET N-CH 30V 7.2A/22A 6DFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 22A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta), 19W (Tc)
• Rds On (Max) @ Id, Vgs: 22mOhm @ 7.2A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DFN2020MD-6
• Package / Case: 6-UDFN Exposed Pad

封裝: -

PMEG40T10ERX

Nexperia USA Inc.

DIODE SCHOTTKY 40V 1A SOD123W

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 400 mV @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 11.5 ns
• Current - Reverse Leakage @ Vr: 22 µA @ 40 V
• Capacitance @ Vr, F: 350pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123W
• Supplier Device Package: SOD-123W
• Operating Temperature - Junction: 175°C (Max)

封裝: -