Microsemi Corporation 產品

APTGT150A60T3AG

Microsemi Corporation

MOD IGBT 600V 225A SP3

• IGBT Type: Trench Field Stop
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 225A
• Power - Max: 600W
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 150A
• Current - Collector Cutoff (Max): 250µA
• Input Capacitance (Cies) @ Vce: 9.2nF @ 25V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Supplier Device Package: SP3

封裝: SP3

JANTXV2N6849U

Microsemi Corporation

MOSFET P-CH 100V 6.5A

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 34.8nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 800mW (Ta), 25W (Tc)
• Rds On (Max) @ Id, Vgs: 320 mOhm @ 6.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 18-ULCC (9.14x7.49)
• Package / Case: 18-BQFN Exposed Pad

封裝: 18-BQFN Exposed Pad

JANTX2N6800U

Microsemi Corporation

MOSFET N-CH

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 400V
• Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 34.75nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 800mW (Ta), 25W (Tc)
• Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 18-ULCC (9.14x7.49)
• Package / Case: 18-BQFN Exposed Pad

封裝: 18-BQFN Exposed Pad

APTM120H29FG

Microsemi Corporation

MOSFET 4N-CH 1200V 34A SP6

• FET Type: 4 N-Channel (H-Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 34A
• Rds On (Max) @ Id, Vgs: 348 mOhm @ 17A, 10V
• Vgs(th) (Max) @ Id: 5V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V
• Power - Max: 780W
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Supplier Device Package: SP6

封裝: SP6

JANTX2N6350

Microsemi Corporation

TRANS NPN DARL 80V 5A TO33

• Transistor Type: NPN - Darlington
• Current - Collector (Ic) (Max): 5A
• Voltage - Collector Emitter Breakdown (Max): 80V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 5mA, 5A
• Current - Collector Cutoff (Max): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 5A, 5V
• Power - Max: 1W
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-205AC, TO-33-4 Metal Can
• Supplier Device Package: TO-33

封裝: TO-205AC, TO-33-4 Metal Can

JANTX1N6326DUS

Microsemi Corporation

DIODE ZENER 12V 500MW B SQ-MELF

• Voltage - Zener (Nom) (Vz): 12V
• Tolerance: ±1%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 9V
• Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, B
• Supplier Device Package: B, SQ-MELF

封裝: SQ-MELF, B

JANTXV1N4106-1

Microsemi Corporation

DIODE ZENER 12V 500MW DO35

• Voltage - Zener (Nom) (Vz): 12V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 200 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 9.2V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35 (DO-204AH)

封裝: DO-204AH, DO-35, Axial

1N5931B G

Microsemi Corporation

DIODE ZENER 18V 1.25W DO204AL

• Voltage - Zener (Nom) (Vz): 18V
• Tolerance: ±5%
• Power - Max: 1.25W
• Impedance (Max) (Zzt): 12 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 13.7V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封裝: DO-204AL, DO-41, Axial

1N5952E3/TR13

Microsemi Corporation

DIODE ZENER 130V 1.5W DO204AL

• Voltage - Zener (Nom) (Vz): 130V
• Tolerance: ±20%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 450 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 98.8V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封裝: DO-204AL, DO-41, Axial

1N5383B

Microsemi Corporation

DIODE ZENER 150V 5W T18

• Voltage - Zener (Nom) (Vz): 150V
• Tolerance: ±5%
• Power - Max: 5W
• Impedance (Max) (Zzt): 330 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 108V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

封裝: T-18, Axial

JAN1N5528DUR-1

Microsemi Corporation

DIODE ZENER 8.2V 500MW DO213AA

• Voltage - Zener (Nom) (Vz): 8.2V
• Tolerance: ±1%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 40 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 7.5V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA (Glass)
• Supplier Device Package: -

封裝: DO-213AA (Glass)

JANTXV1N4480C

Microsemi Corporation

DIODE ZENER 43V 1.5W DO41

• Voltage - Zener (Nom) (Vz): 43V
• Tolerance: ±2%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 40 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 34.4V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41

封裝: DO-204AL, DO-41, Axial

1N2984RB

Microsemi Corporation

DIODE ZENER 20V 10W DO213AA

• Voltage - Zener (Nom) (Vz): 20V
• Tolerance: ±5%
• Power - Max: 10W
• Impedance (Max) (Zzt): 4 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 15.2V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 2A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: DO-213AA

封裝: DO-203AA, DO-4, Stud

JAN1N4131CUR-1

Microsemi Corporation

DIODE ZENER 75V DO213AA

• Voltage - Zener (Nom) (Vz): 75V
• Tolerance: ±2%
• Power - Max: -
• Impedance (Max) (Zzt): 700 Ohms
• Current - Reverse Leakage @ Vr: 10nA @ 57V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA
• Supplier Device Package: DO-213AA

封裝: DO-213AA

2EZ56DE3/TR8

Microsemi Corporation

DIODE ZENER 56V 2W DO204AL

• Voltage - Zener (Nom) (Vz): 56V
• Tolerance: ±20%
• Power - Max: 2W
• Impedance (Max) (Zzt): 55 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 42.6V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封裝: DO-204AL, DO-41, Axial

M1AGL600V2-FGG484I

Microsemi Corporation

IC FPGA 235 I/O 484FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 13824
• Total RAM Bits: 110592
• Number of I/O: 235
• Number of Gates: 600000
• Voltage - Supply: 1.14 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 484-BGA
• Supplier Device Package: 484-FPBGA (23x23)

封裝: 484-BGA

AGLE3000V5-FGG484

Microsemi Corporation

IC FPGA 341 I/O 484FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 75264
• Total RAM Bits: 516096
• Number of I/O: 341
• Number of Gates: 3000000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 484-BGA
• Supplier Device Package: 484-FPBGA (23x23)

封裝: 484-BGA

A40MX04-PLG84I

Microsemi Corporation

IC FPGA 69 I/O 84PLCC

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 69
• Number of Gates: 6000
• Voltage - Supply: 3 V ~ 3.6 V, 4.5 V ~ 5.5 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 84-LCC (J-Lead)
• Supplier Device Package: 84-PLCC (29.31x29.31)

封裝: 84-LCC (J-Lead)

MAP4KE47A

Microsemi Corporation

TVS DIODE 40.2VWM 64.8VC DO41

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 40.2V
• Voltage - Breakdown (Min): 44.7V
• Voltage - Clamping (Max) @ Ipp: 64.8V
• Current - Peak Pulse (10/1000µs): 6.2A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封裝: DO-204AL, DO-41, Axial

M1.5KE130AE3

Microsemi Corporation

TVS DIODE 111VWM 179VC CASE1

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 111V
• Voltage - Breakdown (Min): 124V
• Voltage - Clamping (Max) @ Ipp: 179V
• Current - Peak Pulse (10/1000µs): 8.4A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: CASE-1

封裝: DO-201AA, DO-27, Axial

MXLPLAD30KP16CA

Microsemi Corporation

TVS DIODE 16VWM 27.2VC PLAD

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 16V
• Voltage - Breakdown (Min): 17.8V
• Voltage - Clamping (Max) @ Ipp: 27.2V
• Current - Peak Pulse (10/1000µs): 1101A (1.101kA)
• Power - Peak Pulse: 30000W (30kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

封裝: Nonstandard SMD

MXPLAD36KP90AE3

Microsemi Corporation

TVS DIODE 146VC 247A PLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 90V
• Voltage - Breakdown (Min): 100V
• Voltage - Clamping (Max) @ Ipp: 146V
• Current - Peak Pulse (10/1000µs): 247A
• Power - Peak Pulse: 36000W (36kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

封裝: Nonstandard SMD

1N6049A

Microsemi Corporation

TVS DIODE 22VWM 37.5VC DO13

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 22V
• Voltage - Breakdown (Min): 25.7V
• Voltage - Clamping (Max) @ Ipp: 37.5V
• Current - Peak Pulse (10/1000µs): 40A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-13
• Supplier Device Package: DO-13

封裝: DO-13

MXLP5KE7.5CA

Microsemi Corporation

TVS DIODE 7.5VWM 12.9VC DO41

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 7.5V
• Voltage - Breakdown (Min): 8.33V
• Voltage - Clamping (Max) @ Ipp: 12.9V
• Current - Peak Pulse (10/1000µs): 38.8A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封裝: DO-204AL, DO-41, Axial

MASMBJ78CAE3

Microsemi Corporation

TVS DIODE 78VWM 126VC DO214AA

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 78V
• Voltage - Breakdown (Min): 86.7V
• Voltage - Clamping (Max) @ Ipp: 126V
• Current - Peak Pulse (10/1000µs): 4.7A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

封裝: DO-214AA, SMB

MPLAD6.5KP110A

Microsemi Corporation

TVS DIODE 110VWM 177VC PLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 110V
• Voltage - Breakdown (Min): 122V
• Voltage - Clamping (Max) @ Ipp: 177V
• Current - Peak Pulse (10/1000µs): 36.7A
• Power - Peak Pulse: 6500W (6.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

封裝: Nonstandard SMD

SMBJ22CAE3/TR13

Microsemi Corporation

TVS DIODE 22VWM 35.5VC SMBJ

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 22V
• Voltage - Breakdown (Min): 24.4V
• Voltage - Clamping (Max) @ Ipp: 35.5V
• Current - Peak Pulse (10/1000µs): 16.9A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

封裝: DO-214AA, SMB

MPF300XT-1FCG784I

Microsemi Corporation

IC FPGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: -
• Number of Gates: -
• Voltage - Supply: -
• Mounting Type: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

封裝: -