Microsemi Corporation 產品

APT45GR65B2DU30

Microsemi Corporation

INSULATED GATE BIPOLAR TRANSISTO

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 118A
• Current - Collector Pulsed (Icm): 224A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 45A
• Power - Max: 543W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 203nC
• Td (on/off) @ 25°C: 15ns/100ns
• Test Condition: 433V, 45A, 4.3 Ohm, 15V
• Reverse Recovery Time (trr): 80ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: T-MAX? [B2]

封裝: TO-247-3

APTGT200H60G

Microsemi Corporation

IGBT MOD TRENCH FULL BRIDGE SP6

• IGBT Type: Trench Field Stop
• Configuration: Full Bridge Inverter
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 290A
• Power - Max: 625W
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
• Current - Collector Cutoff (Max): 250µA
• Input Capacitance (Cies) @ Vce: 12.3nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Supplier Device Package: SP6

封裝: SP6

APTGT300DU60G

Microsemi Corporation

IGBT MOD TRENCH DUAL SOURCE SP6

• IGBT Type: Trench Field Stop
• Configuration: Dual, Common Source
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 430A
• Power - Max: 1150W
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 300A
• Current - Collector Cutoff (Max): 350µA
• Input Capacitance (Cies) @ Vce: 24nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Supplier Device Package: SP6

封裝: SP6

APT25SM120S

Microsemi Corporation

POWER MOSFET - SIC

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 1200V
• Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 72nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): 175W (Tc)
• Rds On (Max) @ Id, Vgs: 175 mOhm @ 10A, 20V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: D3
• Package / Case: D-3 Module

封裝: D-3 Module

JANTXV2N2325AU4

Microsemi Corporation

SCR 150V 3SMD

• Voltage - Off State: 150V
• Voltage - Gate Trigger (Vgt) (Max): 600mV
• Current - Gate Trigger (Igt) (Max): 20µA
• Voltage - On State (Vtm) (Max): 2.2V
• Current - On State (It (AV)) (Max): 1.6A
• Current - On State (It (RMS)) (Max): -
• Current - Hold (Ih) (Max): 2mA
• Current - Off State (Max): 10µA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
• SCR Type: Sensitive Gate
• Operating Temperature: -65°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 3-SMD, No Lead
• Supplier Device Package: U4

封裝: 3-SMD, No Lead

SMBG5919BE3/TR13

Microsemi Corporation

DIODE ZENER 5.6V 2W SMBG

• Voltage - Zener (Nom) (Vz): 5.6V
• Tolerance: ±5%
• Power - Max: 2W
• Impedance (Max) (Zzt): 2 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 3V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: SMBG (DO-215AA)

封裝: DO-215AA, SMB Gull Wing

1N5339/TR12

Microsemi Corporation

DIODE ZENER 5.6V 5W T18

• Voltage - Zener (Nom) (Vz): 5.6V
• Tolerance: ±20%
• Power - Max: 5W
• Impedance (Max) (Zzt): 1 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

封裝: T-18, Axial

JANTX1N3035D-1

Microsemi Corporation

DIODE ZENER 43V 1W DO41

• Voltage - Zener (Nom) (Vz): 43V
• Tolerance: ±1%
• Power - Max: 1W
• Impedance (Max) (Zzt): 70 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 32.7V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41

封裝: DO-204AL, DO-41, Axial

JANTX1N4978US

Microsemi Corporation

DIODE ZENER 68V 5W D5B

• Voltage - Zener (Nom) (Vz): 68V
• Tolerance: ±5%
• Power - Max: 5W
• Impedance (Max) (Zzt): 50 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 51.7V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: E-MELF
• Supplier Device Package: D-5B

封裝: E-MELF

JANTX1N967C-1

Microsemi Corporation

DIODE ZENER 18V 500MW DO35

• Voltage - Zener (Nom) (Vz): 18V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 21 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 14V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35 (DO-204AH)

封裝: DO-204AH, DO-35, Axial

JANTXV1N755A-1

Microsemi Corporation

DIODE ZENER 7.5V 500MW DO35

• Voltage - Zener (Nom) (Vz): 7.5V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 6 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 5V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

封裝: DO-204AH, DO-35, Axial

1N5932PE3/TR8

Microsemi Corporation

DIODE ZENER 20V 1.5W DO204AL

• Voltage - Zener (Nom) (Vz): 20V
• Tolerance: ±20%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 14 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 15.2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封裝: DO-204AL, DO-41, Axial

UFS505J/TR13

Microsemi Corporation

DIODE ULT FAST 5A 50V SMCJ

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

封裝: -

JAN1N6660DT1

Microsemi Corporation

DIODE ARRAY SCHOTTKY 45V TO254AA

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io) (per Diode): 15A
• Voltage - Forward (Vf) (Max) @ If: 750mV @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 45V
• Operating Temperature - Junction: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-254-3, TO-254AA (Straight Leads)
• Supplier Device Package: TO-254AA

封裝: TO-254-3, TO-254AA (Straight Leads)

JAN1N5294-1

Microsemi Corporation

DIODE CURRENT REG 100V

• Function: Current Regulator
• Sensing Method: -
• Accuracy: ±10%
• Voltage - Input: 100V (Max)
• Current - Output: 750µA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AA, DO-7, Axial
• Supplier Device Package: DO-7

封裝: DO-204AA, DO-7, Axial

JAN1N5307UR-1

Microsemi Corporation

DIODE CURRENT REG 100V

• Function: Current Regulator
• Sensing Method: -
• Accuracy: ±10%
• Voltage - Input: 100V (Max)
• Current - Output: 2.4mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB (MELF, LL41)

封裝: DO-213AB, MELF

M2S050T-FGG484

Microsemi Corporation

IC FPGA SOC 50K LUTS 484FBGA

• Architecture: MCU, FPGA
• Core Processor: ARM? Cortex?-M3
• Flash Size: 256KB
• RAM Size: 64KB
• Peripherals: DDR, PCIe, SERDES
• Connectivity: CAN, Ethernet, I2C, SPI, UART/USART, USB
• Speed: 166MHz
• Primary Attributes: FPGA - 50K Logic Modules
• Operating Temperature: 0°C ~ 85°C (TJ)
• Package / Case: 484-BGA
• Supplier Device Package: 484-FPBGA (23x23)

封裝: 484-BGA

A54SX16P-TQ144M

Microsemi Corporation

IC FPGA 113 I/O 144TQFP

• Number of LABs/CLBs: 1452
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 113
• Number of Gates: 24000
• Voltage - Supply: 3 V ~ 3.6 V, 4.75 V ~ 5.25 V
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 125°C (TC)
• Package / Case: 144-LQFP
• Supplier Device Package: 144-TQFP (20x20)

封裝: 144-LQFP

AX1000-1FGG484I

Microsemi Corporation

IC FPGA 317 I/O 484FBGA

• Number of LABs/CLBs: 18144
• Number of Logic Elements/Cells: -
• Total RAM Bits: 165888
• Number of I/O: 317
• Number of Gates: 1000000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 484-BGA
• Supplier Device Package: 484-FPBGA (23x23)

封裝: 484-BGA

MXLPLAD30KP300AE3

Microsemi Corporation

TVS DIODE 300VWM 483VC PLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 300V
• Voltage - Breakdown (Min): 333V
• Voltage - Clamping (Max) @ Ipp: 483V
• Current - Peak Pulse (10/1000µs): 62A
• Power - Peak Pulse: 30000W (30kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

封裝: Nonstandard SMD

MPLAD18KP70CAE3

Microsemi Corporation

TVS DIODE 113VC 160A PLAD

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 70V
• Voltage - Breakdown (Min): 77.8V
• Voltage - Clamping (Max) @ Ipp: 113V
• Current - Peak Pulse (10/1000µs): 160A
• Power - Peak Pulse: 18000W (18kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

封裝: Nonstandard SMD

LC8.5

Microsemi Corporation

TVS DIODE 8.5VWM 15.9VC DO202AA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 8.5V
• Voltage - Breakdown (Min): 9.44V
• Voltage - Clamping (Max) @ Ipp: 15.9V
• Current - Peak Pulse (10/1000µs): 94A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 100pF @ 1MHz
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-13
• Supplier Device Package: DO-202AA (DO-13)

封裝: DO-13

MXL1.5KE39CA

Microsemi Corporation

TVS DIODE 33.3VWM 53.9VC CASE1

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 33.3V
• Voltage - Breakdown (Min): 37.1V
• Voltage - Clamping (Max) @ Ipp: 53.9V
• Current - Peak Pulse (10/1000µs): 28A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: CASE-1

封裝: DO-201AA, DO-27, Axial

MXL1.5KE10AE3

Microsemi Corporation

TVS DIODE 8.55VWM 14.5VC CASE1

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 8.55V
• Voltage - Breakdown (Min): 9.5V
• Voltage - Clamping (Max) @ Ipp: 14.5V
• Current - Peak Pulse (10/1000µs): 103A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: CASE-1

封裝: DO-201AA, DO-27, Axial

MASMLG7.0CAE3

Microsemi Corporation

TVS DIODE 7VWM 12VC DO215AB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 7V
• Voltage - Breakdown (Min): 7.78V
• Voltage - Clamping (Max) @ Ipp: 12V
• Current - Peak Pulse (10/1000µs): 250A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: SMLG (DO-215AB)

封裝: DO-215AB, SMC Gull Wing

MASMCJ85AE3

Microsemi Corporation

TVS DIODE 85VWM 137VC DO214AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 85V
• Voltage - Breakdown (Min): 94.4V
• Voltage - Clamping (Max) @ Ipp: 137V
• Current - Peak Pulse (10/1000µs): 10.4A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

封裝: DO-214AB, SMC

MSMCJ5.0AE3

Microsemi Corporation

TVS DIODE 5VWM 9.2VC DO214AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 5V
• Voltage - Breakdown (Min): 6.4V
• Voltage - Clamping (Max) @ Ipp: 9.2V
• Current - Peak Pulse (10/1000µs): 163A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

封裝: DO-214AB, SMC

SMAJ60AE3/TR13

Microsemi Corporation

TVS DIODE 60VWM 96.8VC SMAJ

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 60V
• Voltage - Breakdown (Min): 66.7V
• Voltage - Clamping (Max) @ Ipp: 96.8V
• Current - Peak Pulse (10/1000µs): 5.2A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

封裝: DO-214AC, SMA