頁 613 - Microsemi Corporation 產品 | 黑森爾電子
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Microsemi Corporation 產品

記錄 46,511
頁  613/1,662
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2N4860
Microsemi Corporation

N CHANNEL JFET

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): 30V
  • Current - Drain (Idss) @ Vds (Vgs=0): 100mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 6V @ 500pA
  • Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
  • Resistance - RDS(On): 40 Ohm
  • Power - Max: 360mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
封裝: TO-206AA, TO-18-3 Metal Can
庫存5,856
APT30GF60JU3
Microsemi Corporation

IGBT 600V 58A 192W SOT227

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 58A
  • Power - Max: 192W
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
  • Current - Collector Cutoff (Max): 40µA
  • Input Capacitance (Cies) @ Vce: 1.85nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: ISOTOP?
封裝: SOT-227-4, miniBLOC
庫存2,464
APTC80H29T1G
Microsemi Corporation

MOSFET 4N-CH 800V 15A SP1

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 15A
  • Rds On (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V
  • Power - Max: 156W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
封裝: SP1
庫存6,816
hot MRF5812R2
Microsemi Corporation

RF TRANS NPN 18V 200MA 8SOIC

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 2dB @ 500MHz
  • Gain: 15.5dB
  • Power - Max: 1.25W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 200mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存266,268
SG2803J-883B
Microsemi Corporation

TRANS 8NPN DARL 50V 0.5A 18DIP

  • Transistor Type: 8 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 125°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: -
  • Supplier Device Package: 18-CDIP
封裝: -
庫存4,144
1PMT5923C/TR7
Microsemi Corporation

DIODE ZENER 8.2V 3W DO216AA

  • Voltage - Zener (Nom) (Vz): 8.2V
  • Tolerance: ±2%
  • Power - Max: 3W
  • Impedance (Max) (Zzt): 3.5 Ohms
  • Current - Reverse Leakage @ Vr: 5µA @ 6.5V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: DO-216AA
  • Supplier Device Package: DO-216AA
封裝: DO-216AA
庫存6,304
1EZ110D5/TR8
Microsemi Corporation

DIODE ZENER 110V 1W DO204AL

  • Voltage - Zener (Nom) (Vz): 110V
  • Tolerance: ±5%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 570 Ohms
  • Current - Reverse Leakage @ Vr: 500nA @ 83.6V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
封裝: DO-204AL, DO-41, Axial
庫存5,088
JANTXV1N3019DUR-1
Microsemi Corporation

DIODE ZENER 9.1V 1W DO213AB

  • Voltage - Zener (Nom) (Vz): 9.1V
  • Tolerance: ±1%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 6 Ohms
  • Current - Reverse Leakage @ Vr: 25µA @ 6.9V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF (Glass)
  • Supplier Device Package: DO-213AB (MELF, LL41)
封裝: DO-213AB, MELF (Glass)
庫存2,752
JANTXV1N5523BUR-1
Microsemi Corporation

DIODE ZENER 5.1V 500MW DO213AA

  • Voltage - Zener (Nom) (Vz): 5.1V
  • Tolerance: ±5%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 26 Ohms
  • Current - Reverse Leakage @ Vr: 2µA @ 2.5V
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
  • Operating Temperature: -65°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AA (Glass)
  • Supplier Device Package: DO-213AA
封裝: DO-213AA (Glass)
庫存4,112
CDLL3042A
Microsemi Corporation

DIODE ZENER 82V 1W DO213AB

  • Voltage - Zener (Nom) (Vz): 82V
  • Tolerance: ±10%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 200 Ohms
  • Current - Reverse Leakage @ Vr: 500nA @ 62.2V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF
  • Supplier Device Package: DO-213AB
封裝: DO-213AB, MELF
庫存3,888
CDLL4101
Microsemi Corporation

DIODE ZENER 8.2V 500MW DO213AB

  • Voltage - Zener (Nom) (Vz): 8.2V
  • Tolerance: ±5%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 200 Ohms
  • Current - Reverse Leakage @ Vr: 500nA @ 6.3V
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
  • Operating Temperature: -65°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF
  • Supplier Device Package: DO-213AB
封裝: DO-213AB, MELF
庫存2,448
1N5377BE3/TR8
Microsemi Corporation

DIODE ZENER 91V 5W T18

  • Voltage - Zener (Nom) (Vz): 91V
  • Tolerance: ±5%
  • Power - Max: 5W
  • Impedance (Max) (Zzt): 75 Ohms
  • Current - Reverse Leakage @ Vr: 500nA @ 65.5V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: T-18, Axial
  • Supplier Device Package: T-18
封裝: T-18, Axial
庫存3,216
1PMT5929C/TR13
Microsemi Corporation

DIODE ZENER 15V 3W DO216AA

  • Voltage - Zener (Nom) (Vz): 15V
  • Tolerance: ±2%
  • Power - Max: 3W
  • Impedance (Max) (Zzt): 8 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 11.4V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: DO-216AA
  • Supplier Device Package: DO-216AA
封裝: DO-216AA
庫存3,232
SMBJ5373C/TR13
Microsemi Corporation

DIODE ZENER 68V 5W SMBJ

  • Voltage - Zener (Nom) (Vz): 68V
  • Tolerance: ±2%
  • Power - Max: 5W
  • Impedance (Max) (Zzt): 44 Ohms
  • Current - Reverse Leakage @ Vr: 500nA @ 49V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMBJ (DO-214AA)
封裝: DO-214AA, SMB
庫存4,560
1PMT5946B/TR13
Microsemi Corporation

DIODE ZENER 75V 3W DO216AA

  • Voltage - Zener (Nom) (Vz): 75V
  • Tolerance: ±5%
  • Power - Max: 3W
  • Impedance (Max) (Zzt): 140 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 56V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: DO-216AA
  • Supplier Device Package: DO-216AA
封裝: DO-216AA
庫存2,496
1PMT4132/TR7
Microsemi Corporation

DIODE ZENER 82V 1W DO216

  • Voltage - Zener (Nom) (Vz): 82V
  • Tolerance: ±5%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 250 Ohms
  • Current - Reverse Leakage @ Vr: 10nA @ 62.32V
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: DO-216AA
  • Supplier Device Package: DO-216
封裝: DO-216AA
庫存4,976
SK19E3/TR13
Microsemi Corporation

DIODE SCHOTTKY 90V 1A DO214AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 90V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 90V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMBJ)
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: DO-214AA, SMB
庫存4,704
UPS760/TR13
Microsemi Corporation

DIODE SCHOTTKY 60V 7A POWERMITE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 7A
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 7A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 60V
  • Capacitance @ Vr, F: 375pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-216AA
  • Supplier Device Package: Powermite
  • Operating Temperature - Junction: -55°C ~ 125°C
封裝: DO-216AA
庫存3,136
UFT7020A
Microsemi Corporation

DIODE MODULE 200V 35A

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io) (per Diode): 35A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 35A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 25µA @ 200V
  • Operating Temperature - Junction: -
  • Mounting Type: Screw Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封裝: Module
庫存3,936
EX64-TQG100A
Microsemi Corporation

IC FPGA 56 I/O 100TQFP

  • Number of LABs/CLBs: -
  • Number of Logic Elements/Cells: 128
  • Total RAM Bits: -
  • Number of I/O: 56
  • Number of Gates: 3000
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Mounting Type: Surface Mount
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
封裝: 100-LQFP
庫存2,880
A3PE1500-FGG676
Microsemi Corporation

IC FPGA 444 I/O 676FBGA

  • Number of LABs/CLBs: -
  • Number of Logic Elements/Cells: -
  • Total RAM Bits: 276480
  • Number of I/O: 444
  • Number of Gates: 1500000
  • Voltage - Supply: 1.425 V ~ 1.575 V
  • Mounting Type: Surface Mount
  • Operating Temperature: 0°C ~ 85°C (TJ)
  • Package / Case: 676-BGA
  • Supplier Device Package: 676-FBGA (27x27)
封裝: 676-BGA
庫存5,504
M2GL025TS-VF400
Microsemi Corporation

IC FPGA 207 I/O 400VFBGA

  • Number of LABs/CLBs: -
  • Number of Logic Elements/Cells: 27696
  • Total RAM Bits: 1130496
  • Number of I/O: 207
  • Number of Gates: -
  • Voltage - Supply: 1.14 V ~ 2.625 V
  • Mounting Type: Surface Mount
  • Operating Temperature: 0°C ~ 85°C (TJ)
  • Package / Case: 400-LFBGA
  • Supplier Device Package: 400-VFBGA (17x17)
封裝: 400-LFBGA
庫存2,100
JANTXV1N6169AUS
Microsemi Corporation

TVS DIODE 98.8VWM 178.8VC CPKG

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 98.8V
  • Voltage - Breakdown (Min): 123.5V
  • Voltage - Clamping (Max) @ Ipp: 178.8V
  • Current - Peak Pulse (10/1000µs): 8.4A
  • Power - Peak Pulse: 1500W (1.5kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, C
  • Supplier Device Package: C, SQ-MELF
封裝: SQ-MELF, C
庫存6,966
M5KP28AE3
Microsemi Corporation

TVS DIODE 28VWM 45.4VC DO204AR

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 28V
  • Voltage - Breakdown (Min): 31.1V
  • Voltage - Clamping (Max) @ Ipp: 45.5V
  • Current - Peak Pulse (10/1000µs): 110A
  • Power - Peak Pulse: 5000W (5kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AR, Axial
  • Supplier Device Package: DO-204AR
封裝: DO-204AR, Axial
庫存4,950
MXPLAD18KP8.5CA
Microsemi Corporation

TVS DIODE 137VC 132A PLAD

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 85V
  • Voltage - Breakdown (Min): 94.4V
  • Voltage - Clamping (Max) @ Ipp: 137V
  • Current - Peak Pulse (10/1000µs): 132A
  • Power - Peak Pulse: 18000W (18kW)
  • Power Line Protection: No
  • Applications: Automotive
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Nonstandard SMD
  • Supplier Device Package: PLAD
封裝: Nonstandard SMD
庫存2,016
MXPLAD6.5KP22CAE3
Microsemi Corporation

TVS DIODE 22VWM 35.5VC PLAD

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 22V
  • Voltage - Breakdown (Min): 24.4V
  • Voltage - Clamping (Max) @ Ipp: 35.5V
  • Current - Peak Pulse (10/1000µs): 183A
  • Power - Peak Pulse: 6500W (6.5kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Nonstandard SMD
  • Supplier Device Package: PLAD
封裝: Nonstandard SMD
庫存6,606
MASMBG64A
Microsemi Corporation

TVS DIODE 64VWM 103VC DO215AA

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 64V
  • Voltage - Breakdown (Min): 71.1V
  • Voltage - Clamping (Max) @ Ipp: 103V
  • Current - Peak Pulse (10/1000µs): 5.8A
  • Power - Peak Pulse: 600W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-215AA, SMB Gull Wing
  • Supplier Device Package: SMBG (DO-215AA)
封裝: DO-215AA, SMB Gull Wing
庫存4,626
MRF5812MR1
Microsemi Corporation

TRANS NPN 15V 200MA

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
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