Microsemi Corporation 產品

APTM10UM02FAG

Microsemi Corporation

MOSFET N-CH 100V 570A SP6

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 570A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 10mA
• Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 1660W (Tc)
• Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 200A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SP6
• Package / Case: SP6

封裝: SP6

JANTX2N5685

Microsemi Corporation

TRANS NPN 60V 50A TO-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 50A
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 5V @ 10A, 50A
• Current - Collector Cutoff (Max): 500µA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 25A, 2V
• Power - Max: 300W
• Frequency - Transition: -
• Operating Temperature: -55°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-204AA, TO-3
• Supplier Device Package: TO-3 (TO-204AA)

封裝: TO-204AA, TO-3

1214-55

Microsemi Corporation

TRANS BIPO 55AW-1

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 50V
• Frequency - Transition: 1.2GHz ~ 1.4GHz
• Noise Figure (dB Typ @ f): -
• Gain: 7dB
• Power - Max: 175W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
• Current - Collector (Ic) (Max): 8A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: 55AW
• Supplier Device Package: 55AW

封裝: 55AW

JANTX1N935B-1

Microsemi Corporation

DIODE ZENER 9.45V 500MW DO35

• Voltage - Zener (Nom) (Vz): 9V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 20 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 6V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

封裝: DO-204AH, DO-35, Axial

1N5258B (DO-35)

Microsemi Corporation

DIODE ZENER 36V 500MW DO35

• Voltage - Zener (Nom) (Vz): 36V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 70 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 27V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

封裝: DO-204AH, DO-35, Axial

JANTXV1N4102D-1

Microsemi Corporation

DIODE ZENER 8.7V 500MW DO35

• Voltage - Zener (Nom) (Vz): 8.7V
• Tolerance: ±1%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 200 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 6.7V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35 (DO-204AH)

封裝: DO-204AH, DO-35, Axial

CDLL5533A

Microsemi Corporation

DIODE ZENER 13V 500MW DO213AB

• Voltage - Zener (Nom) (Vz): 13V
• Tolerance: ±10%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 90 Ohms
• Current - Reverse Leakage @ Vr: 10nA @ 10.5V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB

封裝: DO-213AB, MELF

CDLL5938B

Microsemi Corporation

DIODE ZENER 36V 1.25W DO213AB

• Voltage - Zener (Nom) (Vz): 36V
• Tolerance: ±5%
• Power - Max: 1.25W
• Impedance (Max) (Zzt): 38 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 27.4V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB

封裝: DO-213AB, MELF

2EZ17D5E3/TR8

Microsemi Corporation

DIODE ZENER 17V 2W DO204AL

• Voltage - Zener (Nom) (Vz): 17V
• Tolerance: ±5%
• Power - Max: 2W
• Impedance (Max) (Zzt): 9 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 13V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封裝: DO-204AL, DO-41, Axial

1N6073US

Microsemi Corporation

DIODE GEN PURP 50V 3A D5A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 2.04V @ 9.4A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Current - Reverse Leakage @ Vr: 1µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, A
• Supplier Device Package: D-5A
• Operating Temperature - Junction: -65°C ~ 155°C

封裝: SQ-MELF, A

JANTX1N3595A-1

Microsemi Corporation

DIODE GEN PURP 125V 150MA DO35

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 125V
• Current - Average Rectified (Io): 150mA
• Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 3µs
• Current - Reverse Leakage @ Vr: 2nA @ 125V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35
• Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-204AH, DO-35, Axial

HSM320J/TR13

Microsemi Corporation

DIODE SCHOTTKY 3A 20V SMCJ

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

封裝: -

HSM330GE3/TR13

Microsemi Corporation

DIODE SCHOTTKY 3A 30V SMCG

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

封裝: -

803-2

Microsemi Corporation

DIODE BRIDGE 22.5A SMD

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 100V
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Current - Reverse Leakage @ Vr: 20µA @ 100V
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-Square, MB
• Supplier Device Package: MB

封裝: 4-Square, MB

MSD160-18

Microsemi Corporation

MOD BRIDGE 3PH 1800V 160A M3

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1800V
• Current - Average Rectified (Io): 160A
• Voltage - Forward (Vf) (Max) @ If: 1.65V @ 300A
• Current - Reverse Leakage @ Vr: 500µA @ 1800V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: M3
• Supplier Device Package: M3

封裝: M3

UC3842AM

Microsemi Corporation

IC REG CTRLR PWM CM 8-DIP

• Output Isolation: Isolated
• Internal Switch(s): No
• Voltage - Breakdown: -
• Topology: Boost, Buck, Flyback, Forward
• Voltage - Start Up: 16V
• Voltage - Supply (Vcc/Vdd): 10 V ~ 30 V
• Duty Cycle: 96%
• Frequency - Switching: 500kHz
• Power (Watts): -
• Fault Protection: Current Limiting
• Control Features: Frequency Control
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-DIP
• Mounting Type: Through Hole

封裝: 8-DIP (0.300", 7.62mm)

M1AFS600-FG484K

Microsemi Corporation

IC FPGA 172 I/O 484FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 110592
• Number of I/O: 172
• Number of Gates: 600000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 100°C (TJ)
• Package / Case: 484-BGA
• Supplier Device Package: 484-FPBGA (23x23)

封裝: 484-BGA

A3PE3000-FG896

Microsemi Corporation

IC FPGA 620 I/O 896FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 516096
• Number of I/O: 620
• Number of Gates: 3000000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 85°C (TJ)
• Package / Case: 896-BGA
• Supplier Device Package: 896-FBGA (31x31)

封裝: 896-BGA

M2GL060T-FG484I

Microsemi Corporation

IC FPGA 267 I/O 484FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 56520
• Total RAM Bits: 1869824
• Number of I/O: 267
• Number of Gates: -
• Voltage - Supply: 1.14 V ~ 2.625 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 484-BGA
• Supplier Device Package: 484-FPBGA (23x23)

封裝: 484-BGA

M2GL060T-VF400

Microsemi Corporation

IC FPGA 207 I/O 400VFBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 56520
• Total RAM Bits: 1869824
• Number of I/O: 207
• Number of Gates: -
• Voltage - Supply: 1.14 V ~ 2.625 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 85°C (TJ)
• Package / Case: 400-LFBGA
• Supplier Device Package: 400-VFBGA (17x17)

封裝: 400-LFBGA

A3P060-VQ100

Microsemi Corporation

IC FPGA 71 I/O 100VQFP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 18432
• Number of I/O: 71
• Number of Gates: 60000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 85°C (TJ)
• Package / Case: 100-TQFP
• Supplier Device Package: 100-VQFP (14x14)

封裝: 100-TQFP

JANTX1N6160AUS

Microsemi Corporation

TVS DIODE 42.6VWM 77VC CPKG

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 42.6V
• Voltage - Breakdown (Min): 53.2V
• Voltage - Clamping (Max) @ Ipp: 77V
• Current - Peak Pulse (10/1000µs): 19.5A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, C
• Supplier Device Package: C, SQ-MELF

封裝: SQ-MELF, C

MXPLAD36KP120CA

Microsemi Corporation

TVS DIODE 193VC 187A PLAD

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 120V
• Voltage - Breakdown (Min): 133V
• Voltage - Clamping (Max) @ Ipp: 193V
• Current - Peak Pulse (10/1000µs): 187A
• Power - Peak Pulse: 36000W (36kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

封裝: Nonstandard SMD

MXRT100KP70CA

Microsemi Corporation

TVS DIODE 70VWM 138VC CASE5A

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 70V
• Voltage - Breakdown (Min): 77.8V
• Voltage - Clamping (Max) @ Ipp: 138V
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: 100000W (100kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AR, Axial
• Supplier Device Package: Case 5A (DO-204AR)

封裝: DO-204AR, Axial

MXPLAD6.5KP14AE3

Microsemi Corporation

TVS DIODE 14VWM 23.2VC PLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 14V
• Voltage - Breakdown (Min): 15.6V
• Voltage - Clamping (Max) @ Ipp: 23.2V
• Current - Peak Pulse (10/1000µs): 280A
• Power - Peak Pulse: 6500W (6.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

封裝: Nonstandard SMD

MAPLAD6.5KP36AE3

Microsemi Corporation

TVS DIODE 36VWM 58.1VC MINIPLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 36V
• Voltage - Breakdown (Min): 40V
• Voltage - Clamping (Max) @ Ipp: 58.1V
• Current - Peak Pulse (10/1000µs): 111A
• Power - Peak Pulse: 6500W (6.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: Mini-PLAD

封裝: Nonstandard SMD

MASMBG51A

Microsemi Corporation

TVS DIODE 51VWM 82.4VC DO215AA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 51V
• Voltage - Breakdown (Min): 56.7V
• Voltage - Clamping (Max) @ Ipp: 82.4V
• Current - Peak Pulse (10/1000µs): 7.3A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: SMBG (DO-215AA)

封裝: DO-215AA, SMB Gull Wing

SMAJ300CAE3/TR13

Microsemi Corporation

TVS DIODE 300VWM SMAJ

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 300V
• Voltage - Breakdown (Min): -
• Voltage - Clamping (Max) @ Ipp: -
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

封裝: DO-214AC, SMA