Microsemi Corporation 產品

APTGT100A60TG

Microsemi Corporation

IGBT MODULE TRENCH PH LEG SP4

• IGBT Type: Trench Field Stop
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 150A
• Power - Max: 340W
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
• Current - Collector Cutoff (Max): 250µA
• Input Capacitance (Cies) @ Vce: 6.1nF @ 25V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Supplier Device Package: SP4

封裝: SP4

APT77N60SC6

Microsemi Corporation

MOSFET N-CH 600V 77A D3PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.6V @ 2.96mA
• Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 25V
• Vgs (Max): ±20V
• FET Feature: Super Junction
• Power Dissipation (Max): 481W (Tc)
• Rds On (Max) @ Id, Vgs: 41 mOhm @ 44.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D3Pak
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JAN2N5154L

Microsemi Corporation

TRANS NPN 80V 2A TO5

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 80V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
• Current - Collector Cutoff (Max): 50µA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
• Power - Max: 1W
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-205AA, TO-5-3 Metal Can
• Supplier Device Package: TO-5

封裝: TO-205AA, TO-5-3 Metal Can

SMBG5950B/TR13

Microsemi Corporation

DIODE ZENER 110V 2W SMBG

• Voltage - Zener (Nom) (Vz): 110V
• Tolerance: ±5%
• Power - Max: 2W
• Impedance (Max) (Zzt): 300 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 83.6V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: SMBG (DO-215AA)

封裝: DO-215AA, SMB Gull Wing

1N5386E3/TR13

Microsemi Corporation

DIODE ZENER 180V 5W T18

• Voltage - Zener (Nom) (Vz): 180V
• Tolerance: ±20%
• Power - Max: 5W
• Impedance (Max) (Zzt): 430 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 130V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

封裝: T-18, Axial

JANTX1N3031CUR-1

Microsemi Corporation

DIODE ZENER 30V 1W DO213AB

• Voltage - Zener (Nom) (Vz): 30V
• Tolerance: ±2%
• Power - Max: 1W
• Impedance (Max) (Zzt): 40 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 22.8V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF (Glass)
• Supplier Device Package: DO-213AB (MELF, LL41)

封裝: DO-213AB, MELF (Glass)

CDLL5238A

Microsemi Corporation

DIODE ZENER 8.7V 10W DO213AB

• Voltage - Zener (Nom) (Vz): 8.7V
• Tolerance: ±10%
• Power - Max: 10mW
• Impedance (Max) (Zzt): 8 Ohms
• Current - Reverse Leakage @ Vr: 3µA @ 6.5V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB

封裝: DO-213AB, MELF

1PMT5929A/TR13

Microsemi Corporation

DIODE ZENER 15V 3W DO216AA

• Voltage - Zener (Nom) (Vz): 15V
• Tolerance: ±10%
• Power - Max: 3W
• Impedance (Max) (Zzt): 8 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 11.4V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: DO-216AA

封裝: DO-216AA

SMBJ5935A/TR13

Microsemi Corporation

DIODE ZENER 27V 2W SMBJ

• Voltage - Zener (Nom) (Vz): 27V
• Tolerance: ±10%
• Power - Max: 2W
• Impedance (Max) (Zzt): 23 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 20.6V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

封裝: DO-214AA, SMB

1PMT4625E3/TR7

Microsemi Corporation

DIODE ZENER 5.1V 1W DO216

• Voltage - Zener (Nom) (Vz): 5.1V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 1500 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 3V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: DO-216

封裝: DO-216AA

JANTXV1N5621

Microsemi Corporation

DIODE GEN PURP 800V 1A AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 300ns
• Current - Reverse Leakage @ Vr: 500nA @ 800V
• Capacitance @ Vr, F: 20pF @ 12V, 1MHz
• Mounting Type: Through Hole
• Package / Case: A, Axial
• Supplier Device Package: -
• Operating Temperature - Junction: -65°C ~ 175°C

封裝: A, Axial

UFS560G/TR13

Microsemi Corporation

DIODE GEN PURP 600V 5A DO215AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.35V @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 60ns
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: DO-215AB
• Operating Temperature - Junction: -55°C ~ 175°C

封裝: DO-215AB, SMC Gull Wing

M2S005S-1VF256

Microsemi Corporation

IC FPGA SOC 5K LUTS

• Architecture: MCU, FPGA
• Core Processor: ARM? Cortex?-M3
• Flash Size: 128KB
• RAM Size: 64KB
• Peripherals: DDR
• Connectivity: CAN, Ethernet, I2C, SPI, UART/USART, USB
• Speed: 166MHz
• Primary Attributes: FPGA - 5K Logic Modules
• Operating Temperature: 0°C ~ 85°C (TJ)
• Package / Case: 256-VFBGA
• Supplier Device Package: 256-BGA (17x17)

封裝: 256-VFBGA

AX1000-2FG896

Microsemi Corporation

IC FPGA 516 I/O 896FBGA

• Number of LABs/CLBs: 18144
• Number of Logic Elements/Cells: -
• Total RAM Bits: 165888
• Number of I/O: 516
• Number of Gates: 1000000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 896-BGA
• Supplier Device Package: 896-FBGA (31x31)

封裝: 896-BGA

A3PE1500-FGG484I

Microsemi Corporation

IC FPGA 280 I/O 484FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 276480
• Number of I/O: 280
• Number of Gates: 1500000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 484-BGA
• Supplier Device Package: 484-FPBGA (23x23)

封裝: 484-BGA

A40MX02-3VQ80

Microsemi Corporation

IC FPGA 57 I/O 80VQFP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 57
• Number of Gates: 3000
• Voltage - Supply: 3 V ~ 3.6 V, 4.75 V ~ 5.25 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 80-TQFP
• Supplier Device Package: 80-VQFP (14x14)

封裝: 80-TQFP

AGLP060V5-VQ176

Microsemi Corporation

IC FPGA 137 I/O 176VQFP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 1584
• Total RAM Bits: 18432
• Number of I/O: 137
• Number of Gates: 60000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 85°C (TJ)
• Package / Case: 176-TQFP
• Supplier Device Package: 176-VQFP (20x20)

封裝: 176-TQFP

M1A3P250-2FG144

Microsemi Corporation

IC FPGA 97 I/O 144FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 36864
• Number of I/O: 97
• Number of Gates: 250000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 85°C (TJ)
• Package / Case: 144-LBGA
• Supplier Device Package: 144-FPBGA (13x13)

封裝: 144-LBGA

A3PN010-1QNG48I

Microsemi Corporation

IC FPGA 34 I/O 48QFN

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 34
• Number of Gates: 10000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: 48-QFN (6x6)

封裝: 48-VFQFN Exposed Pad

MXLSMCJLCE80A

Microsemi Corporation

TVS DIODE 80VWM 129VC DO214AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 80V
• Voltage - Breakdown (Min): 88.7V
• Voltage - Clamping (Max) @ Ipp: 129V
• Current - Peak Pulse (10/1000µs): 11.6A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 90pF @ 1MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

封裝: DO-214AB, SMC

MXPLAD36KP58A

Microsemi Corporation

TVS DIODE 93.6VC 385A PLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 58V
• Voltage - Breakdown (Min): 64.4V
• Voltage - Clamping (Max) @ Ipp: 93.6V
• Current - Peak Pulse (10/1000µs): 385A
• Power - Peak Pulse: 36000W (36kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

封裝: Nonstandard SMD

MXPLAD18KP33A

Microsemi Corporation

TVS DIODE 53.3VC 338A PLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 33V
• Voltage - Breakdown (Min): 36.7V
• Voltage - Clamping (Max) @ Ipp: 53.3V
• Current - Peak Pulse (10/1000µs): 338A
• Power - Peak Pulse: 18000W (18kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

封裝: Nonstandard SMD

MPLAD18KP130CA

Microsemi Corporation

TVS DIODE 209VC 87A PLAD

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 130V
• Voltage - Breakdown (Min): 144V
• Voltage - Clamping (Max) @ Ipp: 209V
• Current - Peak Pulse (10/1000µs): 87A
• Power - Peak Pulse: 18000W (18kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

封裝: Nonstandard SMD

MPLAD15KP43AE3

Microsemi Corporation

TVS DIODE 43VWM 69.4VC PLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 43V
• Voltage - Breakdown (Min): 47.8V
• Voltage - Clamping (Max) @ Ipp: 69.4V
• Current - Peak Pulse (10/1000µs): 216A
• Power - Peak Pulse: 15000W (15kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

封裝: Nonstandard SMD

MXLSMLJ22CA

Microsemi Corporation

TVS DIODE 22VWM 35.5VC DO214AB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 22V
• Voltage - Breakdown (Min): 24.4V
• Voltage - Clamping (Max) @ Ipp: 35.5V
• Current - Peak Pulse (10/1000µs): 84.4A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB

封裝: DO-214AB, SMC

MASMLJ160CAE3

Microsemi Corporation

TVS DIODE 160VWM 259VC DO214AB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 160V
• Voltage - Breakdown (Min): 178V
• Voltage - Clamping (Max) @ Ipp: 259V
• Current - Peak Pulse (10/1000µs): 11.6A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB

封裝: DO-214AB, SMC

MSMBJ64CA

Microsemi Corporation

TVS DIODE 64VWM 103VC DO214AA

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 64V
• Voltage - Breakdown (Min): 71.1V
• Voltage - Clamping (Max) @ Ipp: 103V
• Current - Peak Pulse (10/1000µs): 5.8A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

封裝: DO-214AA, SMB

ZL30701LDG6

Microsemi Corporation

SINGLE CHANNEL IEEE1588 SYNCHRON

• PLL: -
• Main Purpose: -
• Input: -
• Output: -
• Number of Circuits: -
• Ratio - Input:Output: -
• Differential - Input:Output: -
• Frequency - Max: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -