Microsemi Corporation 產品

APT34M120J

Microsemi Corporation

MOSFET N-CH 1200V 34A SOT-227

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1200V
• Current - Continuous Drain (Id) @ 25°C: 34A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 18200pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 960W (Tc)
• Rds On (Max) @ Id, Vgs: 300 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227
• Package / Case: SOT-227-4, miniBLOC

封裝: SOT-227-4, miniBLOC

2N2907AL

Microsemi Corporation

TRANS PNP 60V 0.6A TO-18

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 600mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
• Current - Collector Cutoff (Max): 50nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 500mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-206AA, TO-18-3 Metal Can
• Supplier Device Package: TO-18

封裝: TO-206AA, TO-18-3 Metal Can

2304

Microsemi Corporation

TRANS BIPO 20V 4W 55BT

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 45V
• Frequency - Transition: 2.3GHz
• Noise Figure (dB Typ @ f): -
• Gain: 8dB
• Power - Max: 10.2W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V
• Current - Collector (Ic) (Max): 600mA
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: 55BT
• Supplier Device Package: 55BT

封裝: 55BT

1PMT5916CE3/TR13

Microsemi Corporation

DIODE ZENER 4.3V 3W DO216AA

• Voltage - Zener (Nom) (Vz): 4.3V
• Tolerance: ±2%
• Power - Max: 3W
• Impedance (Max) (Zzt): 6 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: DO-216AA

封裝: DO-216AA

JANTXV1N5546D-1

Microsemi Corporation

DIODE ZENER 33V 500MW DO35

• Voltage - Zener (Nom) (Vz): 33V
• Tolerance: ±1%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 10nA @ 29.7V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35 (DO-204AH)

封裝: DO-204AH, DO-35, Axial

JAN1N4482CUS

Microsemi Corporation

DIODE ZENER 51V 1.5W D-5A

• Voltage - Zener (Nom) (Vz): 51V
• Tolerance: ±2%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 60 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 40.8V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, A
• Supplier Device Package: D-5A

封裝: SQ-MELF, A

JANTX1N4565AUR-1

Microsemi Corporation

DIODE ZENER 3V 500MW DO213AA

• Voltage - Zener (Nom) (Vz): 3V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 200 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 3V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA (Glass)
• Supplier Device Package: DO-213AA

封裝: DO-213AA (Glass)

CDLL963B

Microsemi Corporation

DIODE ZENER 12V 500MW DO213AB

• Voltage - Zener (Nom) (Vz): 12V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 11.5 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 9.1V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB

封裝: DO-213AB, MELF

1N5346C/TR8

Microsemi Corporation

DIODE ZENER 9.1V 5W T18

• Voltage - Zener (Nom) (Vz): 9.1V
• Tolerance: ±2%
• Power - Max: 5W
• Impedance (Max) (Zzt): 2 Ohms
• Current - Reverse Leakage @ Vr: 7.5µA @ 6.6V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

封裝: T-18, Axial

1N5368B/TR8

Microsemi Corporation

DIODE ZENER 47V 5W T18

• Voltage - Zener (Nom) (Vz): 47V
• Tolerance: ±5%
• Power - Max: 5W
• Impedance (Max) (Zzt): 25 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 33.8V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

封裝: T-18, Axial

3EZ91D/TR12

Microsemi Corporation

DIODE ZENER 91V 3W DO204AL

• Voltage - Zener (Nom) (Vz): 91V
• Tolerance: ±20%
• Power - Max: 3W
• Impedance (Max) (Zzt): 115 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 69.2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封裝: DO-204AL, DO-41, Axial

3EZ100D10E3/TR12

Microsemi Corporation

DIODE ZENER 100V 3W DO204AL

• Voltage - Zener (Nom) (Vz): 100V
• Tolerance: ±10%
• Power - Max: 3W
• Impedance (Max) (Zzt): 160 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 76V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封裝: DO-204AL, DO-41, Axial

S16-4150/TR7

Microsemi Corporation

DIODE ARRAY GP 50V 400MA 16SOIC

• Diode Configuration: 8 Independent
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io) (per Diode): 400mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 100nA @ 50V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOIC

封裝: 16-SOIC (0.154", 3.90mm Width)

PD70201ILQ-TR

Microsemi Corporation

IC POE CONTROLLER PD PSE 32QFN

• Type: Controller (PD)
• Number of Channels: 1
• Power - Max: 47.7W
• Internal Switch(s): No
• Auxiliary Sense: No
• Standards: 802.3at (PoE+), 802.3af (PoE)
• Voltage - Supply: 0 V ~ 57 V
• Current - Supply: 200µA
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-VFQFN Exposed Pad
• Supplier Device Package: 32-QFN (5x5)

封裝: 32-VFQFN Exposed Pad

JANTXV1N5285UR-1

Microsemi Corporation

DIODE CURRENT REG 100V

• Function: Current Regulator
• Sensing Method: -
• Accuracy: ±10%
• Voltage - Input: 100V (Max)
• Current - Output: 270µA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB (MELF, LL41)

封裝: DO-213AB, MELF

A54SX16-1VQ100

Microsemi Corporation

IC FPGA 81 I/O 100VQFP

• Number of LABs/CLBs: 1452
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 81
• Number of Gates: 24000
• Voltage - Supply: 3 V ~ 3.6 V, 4.75 V ~ 5.25 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 100-TQFP
• Supplier Device Package: 100-VQFP (14x14)

封裝: 100-TQFP

A3PE3000-2FGG484

Microsemi Corporation

IC FPGA 341 I/O 484FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 516096
• Number of I/O: 341
• Number of Gates: 3000000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 85°C (TJ)
• Package / Case: 484-BGA
• Supplier Device Package: 484-FPBGA (23x23)

封裝: 484-BGA

AGLP030V5-VQG128I

Microsemi Corporation

IC FPGA 101 I/O 128VQFN

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 792
• Total RAM Bits: -
• Number of I/O: 101
• Number of Gates: 30000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 128-TQFP
• Supplier Device Package: 128-VTQFP (14x14)

封裝: 128-TQFP

ZL30310GKG2

Microsemi Corporation

IC TIMING-OVER-PACKET 256TEBGA-2

• PLL: Yes
• Main Purpose: Ethernet
• Input: Clock
• Output: Clock
• Number of Circuits: 1
• Ratio - Input:Output: 11:8
• Differential - Input:Output: No/No
• Frequency - Max: 125MHz
• Voltage - Supply: -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 256-BGA
• Supplier Device Package: 256-BGA (17x17)

封裝: 256-BGA

M1.5KE350CA

Microsemi Corporation

TVS DIODE 300VWM 482VC CASE1

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 300V
• Voltage - Breakdown (Min): 332V
• Voltage - Clamping (Max) @ Ipp: 482V
• Current - Peak Pulse (10/1000µs): 4A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: CASE-1

封裝: DO-201AA, DO-27, Axial

MXPLAD30KP60A

Microsemi Corporation

TVS DIODE 60VWM 96.8VC PLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 60V
• Voltage - Breakdown (Min): 66.7V
• Voltage - Clamping (Max) @ Ipp: 96.8V
• Current - Peak Pulse (10/1000µs): 312A
• Power - Peak Pulse: 30000W (30kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

封裝: Nonstandard SMD

MXP6KE6.8CAE3

Microsemi Corporation

TVS DIODE 5.8VWM 10.5VC T18

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 5.8V
• Voltage - Breakdown (Min): 6.45V
• Voltage - Clamping (Max) @ Ipp: 10.5V
• Current - Peak Pulse (10/1000µs): 57A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

封裝: T-18, Axial

MXLSMLJ7.0A

Microsemi Corporation

TVS DIODE 7VWM 12VC DO214AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 7V
• Voltage - Breakdown (Min): 7.78V
• Voltage - Clamping (Max) @ Ipp: 12V
• Current - Peak Pulse (10/1000µs): 250A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB

封裝: DO-214AB, SMC

MASMLJ75CAE3

Microsemi Corporation

TVS DIODE 75VWM 121VC DO214AB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 75V
• Voltage - Breakdown (Min): 83.3V
• Voltage - Clamping (Max) @ Ipp: 121V
• Current - Peak Pulse (10/1000µs): 24.8A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB

封裝: DO-214AB, SMC

MASMLJ150AE3

Microsemi Corporation

TVS DIODE 150VWM 243VC DO214AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 150V
• Voltage - Breakdown (Min): 167V
• Voltage - Clamping (Max) @ Ipp: 243V
• Current - Peak Pulse (10/1000µs): 12.4A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB

封裝: DO-214AB, SMC

MASMCJ75AE3

Microsemi Corporation

TVS DIODE 75VWM 121VC DO214AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 75V
• Voltage - Breakdown (Min): 83.3V
• Voltage - Clamping (Max) @ Ipp: 121V
• Current - Peak Pulse (10/1000µs): 12.4A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

封裝: DO-214AB, SMC

SMCG6057/TR13

Microsemi Corporation

TVS DIODE 45VWM 80.5VC DO215AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 45V
• Voltage - Breakdown (Min): 50.4V
• Voltage - Clamping (Max) @ Ipp: 80.5V
• Current - Peak Pulse (10/1000µs): 18.6A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: DO-215AB (SMCG)

封裝: DO-215AB, SMC Gull Wing

2N6249

Microsemi Corporation

NPN TRANSISTOR

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 10 A
• Voltage - Collector Emitter Breakdown (Max): 200 V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 10A
• Current - Collector Cutoff (Max): 1mA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10A, 3V
• Power - Max: 6 W
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C
• Mounting Type: Through Hole
• Package / Case: TO-204AA, TO-3
• Supplier Device Package: TO-204AA (TO-3)

封裝: -

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