頁 90 - Micron Technology Inc. 產品 - 記憶體 | 黑森爾電子
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Micron Technology Inc. 產品 - 記憶體

記錄 10,993
頁  90/393
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封裝
庫存
數量
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MT53E128M32D2DS-046 AIT:A
Micron Technology Inc.

IC DRAM LPDDR4 WFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 4Gb (128M x 32)
  • Memory Interface: -
  • Clock Frequency: 2.133GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 0.6V, 1.1V
  • Operating Temperature: -40°C ~ 95°C
  • Mounting Type: Surface Mount
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存6,240
DRAM
SDRAM - Mobile LPDDR4
4Gb (128M x 32)
-
2.133GHz
-
-
0.6V, 1.1V
-40°C ~ 95°C
Surface Mount
-
-
MT29F2G08ABBGAH4-AATES:G
Micron Technology Inc.

IC FLASH 2G NAND SLC 63VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 2Gb (256M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 30ns
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 63-VFBGA
  • Supplier Device Package: 63-VFBGA (9x11)
封裝: 63-VFBGA
庫存4,848
FLASH
FLASH - NAND (SLC)
2Gb (256M x 8)
Parallel
-
30ns
-
1.7V ~ 1.95V
-40°C ~ 105°C (TA)
Surface Mount
63-VFBGA
63-VFBGA (9x11)
MT53E128M32D2DS-053 AIT:A TR
Micron Technology Inc.

IC DRAM LPDDR4 WFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 4Gb (128M x 32)
  • Memory Interface: -
  • Clock Frequency: 1.866GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 0.6V, 1.1V
  • Operating Temperature: -40°C ~ 95°C
  • Mounting Type: Surface Mount
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存6,576
DRAM
SDRAM - Mobile LPDDR4
4Gb (128M x 32)
-
1.866GHz
-
-
0.6V, 1.1V
-40°C ~ 95°C
Surface Mount
-
-
MT53E128M32D2DS-046 AIT:A TR
Micron Technology Inc.

IC DRAM LPDDR4 WFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 4Gb (128M x 32)
  • Memory Interface: -
  • Clock Frequency: 2.133GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 0.6V, 1.1V
  • Operating Temperature: -40°C ~ 95°C
  • Mounting Type: Surface Mount
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存5,600
DRAM
SDRAM - Mobile LPDDR4
4Gb (128M x 32)
-
2.133GHz
-
-
0.6V, 1.1V
-40°C ~ 95°C
Surface Mount
-
-
MT29F8G08ADBFAH4-AAT:F TR
Micron Technology Inc.

IC FLASH NAND 8G PAR VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 8Gb (1G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 63-VFBGA
  • Supplier Device Package: 63-VFBGA (9x11)
封裝: 63-VFBGA
庫存4,816
FLASH
FLASH - NAND (SLC)
8Gb (1G x 8)
Parallel
-
-
-
1.7V ~ 1.95V
-40°C ~ 105°C (TA)
Surface Mount
63-VFBGA
63-VFBGA (9x11)
MT29F8G08ADAFAH4-AAT:F TR
Micron Technology Inc.

IC FLASH NAND 8G PAR VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 8Gb (1G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 63-VFBGA
  • Supplier Device Package: 63-VFBGA (9x11)
封裝: 63-VFBGA
庫存5,280
FLASH
FLASH - NAND (SLC)
8Gb (1G x 8)
Parallel
-
-
-
2.7V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
63-VFBGA
63-VFBGA (9x11)
MT29F8G01ADBFD12-AAT:F TR
Micron Technology Inc.

IC FLASH NAND 8G PAR TBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 8Gb (8G x 1)
  • Memory Interface: SPI
  • Clock Frequency: 83MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-T-PBGA (6x8)
封裝: 24-TBGA
庫存4,112
FLASH
FLASH - NAND (SLC)
8Gb (8G x 1)
SPI
83MHz
-
-
1.7V ~ 1.95V
-40°C ~ 105°C (TA)
Surface Mount
24-TBGA
24-T-PBGA (6x8)
MT29F8G01ADAFD12-AAT:F TR
Micron Technology Inc.

IC FLASH NAND 8G PAR TBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 8Gb (8G x 1)
  • Memory Interface: SPI
  • Clock Frequency: 83MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-T-PBGA (6x8)
封裝: 24-TBGA
庫存4,480
FLASH
FLASH - NAND (SLC)
8Gb (8G x 1)
SPI
83MHz
-
-
2.7V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
24-TBGA
24-T-PBGA (6x8)
MT29F8G08ADAFAWP-AIT:F TR
Micron Technology Inc.

IC FLASH NAND 8G PAR TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 8Gb (1G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
封裝: 48-TFSOP (0.724", 18.40mm Width)
庫存5,760
FLASH
FLASH - NAND (SLC)
8Gb (1G x 8)
Parallel
-
-
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
MT53E256M16D1DS-046 WT:B
Micron Technology Inc.

IC DRAM LPDDR4 WFBGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存7,920
-
-
-
-
-
-
-
-
-
-
-
-
MT46V32M16CY-5B XIT:J
Micron Technology Inc.

IC SDRAM DDR 512M 60FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR
  • Memory Size: 512M (32M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 700ps
  • Voltage - Supply: 2.5V ~ 2.7V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-FBGA (8x12.5)
封裝: 60-TFBGA
庫存5,392
DRAM
SDRAM - DDR
512M (32M x 16)
Parallel
200MHz
15ns
700ps
2.5V ~ 2.7V
-40°C ~ 85°C (TA)
Surface Mount
60-TFBGA
60-FBGA (8x12.5)
MT46V32M16CY-5B XIT:J TR
Micron Technology Inc.

IC SDRAM DDR 512M 60FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR
  • Memory Size: 512M (32M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 700ps
  • Voltage - Supply: 2.5V ~ 2.7V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-FBGA (8x12.5)
封裝: 60-TFBGA
庫存4,512
DRAM
SDRAM - DDR
512M (32M x 16)
Parallel
200MHz
15ns
700ps
2.5V ~ 2.7V
-40°C ~ 85°C (TA)
Surface Mount
60-TFBGA
60-FBGA (8x12.5)
MT53E256M16D1DS-046 WT:B TR
Micron Technology Inc.

IC DRAM LPDDR4 WFBGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存6,336
-
-
-
-
-
-
-
-
-
-
-
-
MT53E128M32D2DS-053 WT:A
Micron Technology Inc.

IC DRAM LPDDR4 WFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 4Gb (128M x 32)
  • Memory Interface: -
  • Clock Frequency: 1.866GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 0.6V, 1.1V
  • Operating Temperature: -30°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存4,288
DRAM
SDRAM - Mobile LPDDR4
4Gb (128M x 32)
-
1.866GHz
-
-
0.6V, 1.1V
-30°C ~ 85°C
Surface Mount
-
-
MT53E128M32D2DS-046 WT:A
Micron Technology Inc.

IC DRAM LPDDR4 WFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 4Gb (128M x 32)
  • Memory Interface: -
  • Clock Frequency: 2.133GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 0.6V, 1.1V
  • Operating Temperature: -30°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存5,664
DRAM
SDRAM - Mobile LPDDR4
4Gb (128M x 32)
-
2.133GHz
-
-
0.6V, 1.1V
-30°C ~ 85°C
Surface Mount
-
-
MT41K256M16TW-107 IT:P
Micron Technology Inc.

IC SDRAM 4GBIT 933MHZ 96FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 4Gb (256M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 933MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 20ns
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-FBGA (8x14)
封裝: 96-TFBGA
庫存7,936
DRAM
SDRAM - DDR3L
4Gb (256M x 16)
Parallel
933MHz
-
20ns
1.283V ~ 1.45V
-40°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-FBGA (8x14)
MT40A512M8RH-083E:B TR
Micron Technology Inc.

IC SDRAM DDR4 4G 78FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 4Gb (512M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 1.2GHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 19ns
  • Voltage - Supply: 1.14V ~ 1.26V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-TFBGA
  • Supplier Device Package: 78-FBGA (9x10.5)
封裝: 78-TFBGA
庫存5,680
DRAM
SDRAM - DDR4
4Gb (512M x 8)
Parallel
1.2GHz
15ns
19ns
1.14V ~ 1.26V
0°C ~ 95°C (TC)
Surface Mount
78-TFBGA
78-FBGA (9x10.5)
MT40A256M16GE-083E:B TR
Micron Technology Inc.

IC SDRAM DDR4 4G PAR 96FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 4Gb (256M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 1.2GHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 19ns
  • Voltage - Supply: 1.14V ~ 1.26V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-FBGA (9x14)
封裝: 96-TFBGA
庫存4,896
DRAM
SDRAM - DDR4
4Gb (256M x 16)
Parallel
1.2GHz
15ns
19ns
1.14V ~ 1.26V
0°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-FBGA (9x14)
MT40A256M16GE-075E:B TR
Micron Technology Inc.

IC SDRAM DDR4 4G PAR 96FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 4Gb (256M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 1.333GHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 19ns
  • Voltage - Supply: 1.14V ~ 1.26V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-FBGA (9x14)
封裝: 96-TFBGA
庫存7,328
DRAM
SDRAM - DDR4
4Gb (256M x 16)
Parallel
1.333GHz
15ns
19ns
1.14V ~ 1.26V
0°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-FBGA (9x14)
MT53E128M32D2DS-053 WT:A TR
Micron Technology Inc.

IC DRAM LPDDR4 WFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 4Gb (128M x 32)
  • Memory Interface: -
  • Clock Frequency: 1.866GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 0.6V, 1.1V
  • Operating Temperature: -30°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存5,184
DRAM
SDRAM - Mobile LPDDR4
4Gb (128M x 32)
-
1.866GHz
-
-
0.6V, 1.1V
-30°C ~ 85°C
Surface Mount
-
-
MT53E128M32D2DS-046 WT:A TR
Micron Technology Inc.

IC DRAM LPDDR4 WFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 4Gb (128M x 32)
  • Memory Interface: -
  • Clock Frequency: 2.133GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 0.6V, 1.1V
  • Operating Temperature: -30°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存4,944
DRAM
SDRAM - Mobile LPDDR4
4Gb (128M x 32)
-
2.133GHz
-
-
0.6V, 1.1V
-30°C ~ 85°C
Surface Mount
-
-
MT41K512M8DA-107 IT:P TR
Micron Technology Inc.

IC SDRAM DDR3 4GB 78FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 4Gb (512M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 933MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20ns
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-TFBGA
  • Supplier Device Package: 78-FBGA (8x10.5)
封裝: 78-TFBGA
庫存2,512
DRAM
SDRAM - DDR3L
4Gb (512M x 8)
Parallel
933MHz
15ns
20ns
1.283V ~ 1.45V
-40°C ~ 95°C (TC)
Surface Mount
78-TFBGA
78-FBGA (8x10.5)
MT41K256M16TW-107 IT:P TR
Micron Technology Inc.

IC SDRAM DDR3 4GB 96FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 4Gb (256M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 933MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20ns
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-FBGA (8x14)
封裝: 96-TFBGA
庫存2,448
DRAM
SDRAM - DDR3L
4Gb (256M x 16)
Parallel
933MHz
15ns
20ns
1.283V ~ 1.45V
-40°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-FBGA (8x14)
MT47H256M4SH-25E:M TR
Micron Technology Inc.

IC SDRAM DDR2 1G 60FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 1Gb (256M x 4)
  • Memory Interface: Parallel
  • Clock Frequency: 400MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 400ps
  • Voltage - Supply: 1.7V ~ 1.9V
  • Operating Temperature: 0°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-FBGA (8x10)
封裝: 60-TFBGA
庫存2,736
DRAM
SDRAM - DDR2
1Gb (256M x 4)
Parallel
400MHz
15ns
400ps
1.7V ~ 1.9V
0°C ~ 85°C (TC)
Surface Mount
60-TFBGA
60-FBGA (8x10)
MT53E128M16D1DS-053 AAT:A
Micron Technology Inc.

IC DRAM LPDDR4 WFBGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存3,344
-
-
-
-
-
-
-
-
-
-
-
-
MT53E128M16D1DS-046 AAT:A
Micron Technology Inc.

IC DRAM LPDDR4 WFBGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存3,760
-
-
-
-
-
-
-
-
-
-
-
-
MT41K512M8DA-093:P TR
Micron Technology Inc.

IC SDRAM DDR3 4GB 78FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 4Gb (512M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 1.066GHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20ns
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-TFBGA
  • Supplier Device Package: 78-FBGA (8x10.5)
封裝: 78-TFBGA
庫存6,880
DRAM
SDRAM - DDR3L
4Gb (512M x 8)
Parallel
1.066GHz
15ns
20ns
1.283V ~ 1.45V
0°C ~ 95°C (TC)
Surface Mount
78-TFBGA
78-FBGA (8x10.5)
MTFC4GACAALT-4M IT
Micron Technology Inc.

MODULE EMMC 4GB 100TBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 32Gb (4G x 8)
  • Memory Interface: MMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-TBGA
  • Supplier Device Package: 100-TBGA (14x18)
封裝: 100-TBGA
庫存4,768
FLASH
FLASH - NAND
32Gb (4G x 8)
MMC
-
-
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
100-TBGA
100-TBGA (14x18)