頁 24 - Micron Technology Inc. 產品 - 記憶體 | 黑森爾電子
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Micron Technology Inc. 產品 - 記憶體

記錄 10,993
頁  24/393
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Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MT62F1G64D4ZX-026-WT-C
Micron Technology Inc.

LPDDR5 64GBIT 64 496/756 UFBGA 4

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR5
  • Memory Size: 64Gbit
  • Memory Interface: LVSTL
  • Clock Frequency: 3.75 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.01V ~ 1.12V
  • Operating Temperature: -25°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 496-UFBGA
  • Supplier Device Package: 496-UFBGA (14x12.4)
封裝: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR5
64Gbit
LVSTL
3.75 GHz
-
-
1.01V ~ 1.12V
-25°C ~ 85°C (TC)
Surface Mount
496-UFBGA
496-UFBGA (14x12.4)
MT29F2T08GELCEJ4-C
Micron Technology Inc.

QLC 2T 256GX8 VBGA DDP

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
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MT53E768M32D4DE-046-IT-E-TR
Micron Technology Inc.

IC DRAM

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4X
  • Memory Size: 24Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 2.133 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-TFBGA
  • Supplier Device Package: 200-TFBGA (10x14.5)
封裝: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4X
24Gbit
Parallel
2.133 GHz
18ns
3.5 ns
1.06V ~ 1.17V
-40°C ~ 95°C (TC)
Surface Mount
200-TFBGA
200-TFBGA (10x14.5)
MT62F1G64D4EK-023-AUT-C
Micron Technology Inc.

LPDDR5 64GBIT 64 441/441 TFBGA 4

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
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MT62F1G64D4EK-023-AUT-B
Micron Technology Inc.

LPDDR5 64G 1GX64 FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR5
  • Memory Size: 64Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 4.266 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.05V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 441-TFBGA
  • Supplier Device Package: 441-TFBGA (14x14)
封裝: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR5
64Gbit
Parallel
4.266 GHz
-
-
1.05V
-
Surface Mount
441-TFBGA
441-TFBGA (14x14)
MT29F512G08EBLEEJ4-T-E
Micron Technology Inc.

TLC 512G 64GX8 VBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (TLC)
  • Memory Size: 512Gbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.6V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C
  • Mounting Type: Surface Mount
  • Package / Case: 132-VBGA
  • Supplier Device Package: 132-VBGA (12x18)
封裝: -
Request a Quote
FLASH
FLASH - NAND (TLC)
512Gbit
Parallel
-
-
-
2.6V ~ 3.6V
0°C ~ 70°C
Surface Mount
132-VBGA
132-VBGA (12x18)
MT58L256L18F1T-10IT
Micron Technology Inc.

IC SRAM 4MBIT PARALLEL 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Standard
  • Memory Size: 4Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 66 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 10 ns
  • Voltage - Supply: 3.135V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20.1)
封裝: -
Request a Quote
SRAM
SRAM - Standard
4Mbit
Parallel
66 MHz
-
10 ns
3.135V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20.1)
MT53E2G64D8TN-046-AIT-C-TR
Micron Technology Inc.

LPDDR4 128G 2GX64 FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4X
  • Memory Size: 128Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 2.133 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 556-LFBGA
  • Supplier Device Package: 556-LFBGA (12.4x12.4)
封裝: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4X
128Gbit
Parallel
2.133 GHz
18ns
3.5 ns
1.06V ~ 1.17V
-40°C ~ 95°C (TC)
Surface Mount
556-LFBGA
556-LFBGA (12.4x12.4)
MT57V512H36AF-7-5
Micron Technology Inc.

IC SRAM 18MBIT HSTL 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 18Mbit
  • Memory Interface: HSTL
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.6 ns
  • Voltage - Supply: 2.4V ~ 2.6V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-FBGA (13x15)
封裝: -
Request a Quote
SRAM
SRAM - Synchronous
18Mbit
HSTL
133 MHz
-
3.6 ns
2.4V ~ 2.6V
0°C ~ 70°C (TA)
Surface Mount
165-TBGA
165-FBGA (13x15)
MT29F512G08EBLEEJ4-R-E
Micron Technology Inc.

TLC 512G 64GX8 VBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (TLC)
  • Memory Size: 512Gbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.6V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C
  • Mounting Type: Surface Mount
  • Package / Case: 132-VBGA
  • Supplier Device Package: 132-VBGA (12x18)
封裝: -
Request a Quote
FLASH
FLASH - NAND (TLC)
512Gbit
Parallel
-
-
-
2.6V ~ 3.6V
0°C ~ 70°C
Surface Mount
132-VBGA
132-VBGA (12x18)
MT42L32M32D1U08MWC1
Micron Technology Inc.

LPDDR2 1G DIE 32MX32

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
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MT62F512M128D8TE-031-XT-B
Micron Technology Inc.

LPDDR5 64G 512MX128 FBGA 8DP

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
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MT29F16T08GWLCEM5-C
Micron Technology Inc.

QLC 16T 2TX8 LBGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
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MT53E2G64D8TN-046-AAT-C
Micron Technology Inc.

LPDDR4 128G 2GX64 FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4X
  • Memory Size: 128Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 2.133 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 556-LFBGA
  • Supplier Device Package: 556-LFBGA (12.4x12.4)
封裝: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4X
128Gbit
Parallel
2.133 GHz
18ns
3.5 ns
1.06V ~ 1.17V
-40°C ~ 105°C (TC)
Surface Mount
556-LFBGA
556-LFBGA (12.4x12.4)
MT53E2G64D8TN-046-AAT-A
Micron Technology Inc.

LPDDR4 128G X64 LFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4X
  • Memory Size: 128Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 2.133 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 556-LFBGA
  • Supplier Device Package: 556-LFBGA (12.4x12.4)
封裝: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4X
128Gbit
Parallel
2.133 GHz
18ns
3.5 ns
1.06V ~ 1.17V
-40°C ~ 105°C (TC)
Surface Mount
556-LFBGA
556-LFBGA (12.4x12.4)
MT53E512M32D1ZW-046BAIT-B
Micron Technology Inc.

IC DRAM 16GBIT 2.133GHZ 200WFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4X
  • Memory Size: 16Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 2.133 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-TFBGA
  • Supplier Device Package: 200-TFBGA (10x14.5)
封裝: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4X
16Gbit
Parallel
2.133 GHz
18ns
3.5 ns
1.06V ~ 1.17V
-40°C ~ 95°C (TC)
Surface Mount
200-TFBGA
200-TFBGA (10x14.5)
MT41K256M16TW-17-XIT-P-TR
Micron Technology Inc.

IC DRAM 4GBIT PARALLEL 96FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 4Gbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-FBGA (8x14)
封裝: -
Request a Quote
DRAM
SDRAM - DDR3L
4Gbit
Parallel
-
-
-
1.283V ~ 1.45V
0°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-FBGA (8x14)
MT62F1G32D2DS-026-WT-C-TR
Micron Technology Inc.

LPDDR5 32GBIT 32 315/315 TFBGA 2

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR5
  • Memory Size: 32Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 3.2 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.05V
  • Operating Temperature: -25°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 200-WFBGA
  • Supplier Device Package: 200-WFBGA (10x14.5)
封裝: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR5
32Gbit
Parallel
3.2 GHz
-
-
1.05V
-25°C ~ 85°C
Surface Mount
200-WFBGA
200-WFBGA (10x14.5)
MTFC32GASAONS-IT-TR
Micron Technology Inc.

USSD 256G

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 256Gbit
  • Memory Interface: UFS2.1
  • Clock Frequency: 52 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 153-TFBGA
  • Supplier Device Package: 153-TFBGA (11.5x13)
封裝: -
Request a Quote
FLASH
FLASH - NAND (SLC)
256Gbit
UFS2.1
52 MHz
-
-
2.7V ~ 3.6V
-40°C ~ 95°C (TC)
Surface Mount
153-TFBGA
153-TFBGA (11.5x13)
MT29F512G08EBLEEJ4-M-E
Micron Technology Inc.

TLC 512G 64GX8 VBGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
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MT53D1024M32D4BD-046-WT-D
Micron Technology Inc.

IC DRAM 32G 2133MHZ FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 32Gbit
  • Memory Interface: -
  • Clock Frequency: 2.133 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4
32Gbit
-
2.133 GHz
-
-
1.1V
-30°C ~ 85°C (TC)
-
-
-
MT58L256L32DT-7-5
Micron Technology Inc.

IC SRAM 8MBIT PARALLEL 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 8Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 4 ns
  • Voltage - Supply: 3.135V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20.1)
封裝: -
Request a Quote
SRAM
SRAM - Synchronous
8Mbit
Parallel
133 MHz
-
4 ns
3.135V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20.1)
MT53E256M32D2FW-046-IT-B-TR
Micron Technology Inc.

LPDDR4 8G 256MX32 FBGA DDP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4X
  • Memory Size: 8Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 2.133 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-TFBGA
  • Supplier Device Package: 200-TFBGA (10x14.5)
封裝: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4X
8Gbit
Parallel
2.133 GHz
18ns
3.5 ns
1.06V ~ 1.17V
-40°C ~ 95°C (TC)
Surface Mount
200-TFBGA
200-TFBGA (10x14.5)
MT62F2G64D8AK-026-XT-C
Micron Technology Inc.

LPDDR5 128GBIT 64 1159/2021 VFBG

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
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MTFC64GBCAQDQ-AAT
Micron Technology Inc.

EMMC 512G LBGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
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MT62F1536M64D8EK-023-AAT-C-TR
Micron Technology Inc.

LPDDR5 96GBIT 64 441/441 TFBGA 8

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR5X
  • Memory Size: 96Gbit
  • Memory Interface: LVSTL
  • Clock Frequency: 4.266 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.01V ~ 1.12V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 441-TFBGA
  • Supplier Device Package: 441-TFBGA (14x14)
封裝: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR5X
96Gbit
LVSTL
4.266 GHz
-
-
1.01V ~ 1.12V
-40°C ~ 105°C (TC)
Surface Mount
441-TFBGA
441-TFBGA (14x14)
MT40A4G4JC-062E-E
Micron Technology Inc.

DRAMDDR4Z32D16GB

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 16Gbit
  • Memory Interface: POD
  • Clock Frequency: 1.6 GHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 19 ns
  • Voltage - Supply: 1.14V ~ 1.26V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-TFBGA
  • Supplier Device Package: 78-FBGA (9x11)
封裝: -
Request a Quote
DRAM
SDRAM - DDR4
16Gbit
POD
1.6 GHz
15ns
19 ns
1.14V ~ 1.26V
0°C ~ 95°C (TC)
Surface Mount
78-TFBGA
78-FBGA (9x11)
MT62F768M64D4EJ-031-WT-ES-A
Micron Technology Inc.

LPDDR5 48G 768MX64 FBGA QDP

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
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