頁 112 - Micron Technology Inc. 產品 - 記憶體

零件編號	製造商	描述	封裝	庫存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT25QL01GBBB8ESF-0AAT	Micron Technology Inc.	IC FLASH 1G SPI 133MHZ 16SOP2 Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Gb (128M x 8) Memory Interface: SPI Clock Frequency: 133MHz Write Cycle Time - Word, Page: 8ms, 2.8ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOP2	封裝: 16-SOIC (0.295", 7.50mm Width)	庫存5,952	FLASH	FLASH - NOR	1Gb (128M x 8)	SPI	133MHz	8ms, 2.8ms	-	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOP2
MT25QL01GBBB8E12-0AAT	Micron Technology Inc.	IC FLASH 1G SPI 133MHZ 24TPBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Gb (128M x 8) Memory Interface: SPI Clock Frequency: 133MHz Write Cycle Time - Word, Page: 8ms, 2.8ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-T-PBGA (6x8)	封裝: 24-TBGA	庫存4,480	FLASH	FLASH - NOR	1Gb (128M x 8)	SPI	133MHz	8ms, 2.8ms	-	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	24-TBGA	24-T-PBGA (6x8)
MT25QL01GBBB1EW9-0SIT	Micron Technology Inc.	IC FLASH 1G SPI 133MHZ 8WPDFN Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Gb (128M x 8) Memory Interface: SPI Clock Frequency: 133MHz Write Cycle Time - Word, Page: 8ms, 2.8ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: - Supplier Device Package: 8-WPDFN (6x8) (MLP8)	封裝: -	庫存6,128	FLASH	FLASH - NOR	1Gb (128M x 8)	SPI	133MHz	8ms, 2.8ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	-	8-WPDFN (6x8) (MLP8)
MT44K32M18RB-107E:B	Micron Technology Inc.	IC DRAM 576M PARALLEL 933MHZ Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 576Mb (32M x 18) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: 8ns Voltage - Supply: 1.28 V ~ 1.42 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存3,520	DRAM	DRAM	576Mb (32M x 18)	Parallel	933MHz	-	8ns	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	-	-	-
MT44K16M36RB-107E:B	Micron Technology Inc.	IC DRAM 576M PARALLEL 933MHZ Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 576Mb (16M x 36) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: 8ns Voltage - Supply: 1.28 V ~ 1.42 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存4,576	DRAM	DRAM	576Mb (16M x 36)	Parallel	933MHz	-	8ns	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	-	-	-
MT44K32M18RB-093E:B	Micron Technology Inc.	IC DRAM 576M PARALLEL 1067MHZ Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 576Mb (32M x 18) Memory Interface: Parallel Clock Frequency: 1067MHz Write Cycle Time - Word, Page: - Access Time: 8ns Voltage - Supply: 1.28 V ~ 1.42 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存7,744	DRAM	DRAM	576Mb (32M x 18)	Parallel	1067MHz	-	8ns	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	-	-	-
MT44K16M36RB-093E IT:B	Micron Technology Inc.	IC DRAM 576M PARALLEL 1067MHZ Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 576Mb (16M x 36) Memory Interface: Parallel Clock Frequency: 1067MHz Write Cycle Time - Word, Page: - Access Time: 8ns Voltage - Supply: 1.28 V ~ 1.42 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存6,528	DRAM	DRAM	576Mb (16M x 36)	Parallel	1067MHz	-	8ns	1.28 V ~ 1.42 V	-40°C ~ 95°C (TC)	-	-	-
MT29F128G08AMCDBJ5-6IT:D	Micron Technology Inc.	IC FLASH 128G PARALLEL 167MHZ Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 128Gb (16G x 8) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存5,648	FLASH	FLASH - NAND	128Gb (16G x 8)	Parallel	167MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MTA8ATF1G64HZ-2G6E1	Micron Technology Inc.	IC DRAM 64G PARALLEL 1333MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 64Gb (1G x 64) Memory Interface: Parallel Clock Frequency: 1333MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存5,600	DRAM	SDRAM - DDR4	64Gb (1G x 64)	Parallel	1333MHz	-	-	1.2V	0°C ~ 95°C (TC)	-	-	-
MTA4ATF51264HZ-2G6E1	Micron Technology Inc.	IC DRAM 32G PARALLEL 1333MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 32Gb (512M x 64) Memory Interface: Parallel Clock Frequency: 1333MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存3,424	DRAM	SDRAM - DDR4	32Gb (512M x 64)	Parallel	1333MHz	-	-	1.2V	0°C ~ 95°C (TC)	-	-	-
MTA4ATF51264AZ-2G6E1	Micron Technology Inc.	IC DRAM 32G PARALLEL 1333MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 32Gb (512M x 64) Memory Interface: Parallel Clock Frequency: 1333MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存4,480	DRAM	SDRAM - DDR4	32Gb (512M x 64)	Parallel	1333MHz	-	-	1.2V	0°C ~ 95°C (TC)	-	-	-
MT53B512M64D4PV-053 WT:C	Micron Technology Inc.	IC DRAM 32G 1866MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 32Gb (512M x 64) Memory Interface: - Clock Frequency: 1866MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存4,720	DRAM	SDRAM - Mobile LPDDR4	32Gb (512M x 64)	-	1866MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT44K32M36RB-093F:A	Micron Technology Inc.	IC DRAM 1.125G PARALLEL 1067MHZ Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 1.125Gb (32Mb x 36) Memory Interface: Parallel Clock Frequency: 1067MHz Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 1.28 V ~ 1.42 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存5,488	DRAM	DRAM	1.125Gb (32Mb x 36)	Parallel	1067MHz	-	7.5ns	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	-	-	-
MT52L512M64D4PQ-093 WT:B	Micron Technology Inc.	IC DRAM 32G 1067MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 32Gb (512M x 64) Memory Interface: - Clock Frequency: 1067MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存2,624	DRAM	SDRAM - Mobile LPDDR3	32Gb (512M x 64)	-	1067MHz	-	-	1.2V	-30°C ~ 85°C (TC)	-	-	-
MT44K32M18RB-093F:B	Micron Technology Inc.	IC DRAM 576M PARALLEL 1067MHZ Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 576Mb (32M x 18) Memory Interface: Parallel Clock Frequency: 1067MHz Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 1.28 V ~ 1.42 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存3,456	DRAM	DRAM	576Mb (32M x 18)	Parallel	1067MHz	-	7.5ns	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	-	-	-
MT40A1G16HBA-083E:A	Micron Technology Inc.	IC DRAM 16G PARALLEL 1.2GHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 16Gb (1G x 16) Memory Interface: Parallel Clock Frequency: 1.2GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.26 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存6,032	DRAM	SDRAM - DDR4	16Gb (1G x 16)	Parallel	1.2GHz	-	-	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	-	-	-
MT44K16M36RB-107E IT:B	Micron Technology Inc.	IC DRAM 576M PARALLEL 933MHZ Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 576Mb (16M x 36) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: 8ns Voltage - Supply: 1.28 V ~ 1.42 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存5,776	DRAM	DRAM	576Mb (16M x 36)	Parallel	933MHz	-	8ns	1.28 V ~ 1.42 V	-40°C ~ 95°C (TC)	-	-	-
MT52L256M64D2PP-093 WT:B	Micron Technology Inc.	IC DRAM 16G 1067MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 16Gb (256M x 64) Memory Interface: - Clock Frequency: 1067MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存4,112	DRAM	SDRAM - Mobile LPDDR3	16Gb (256M x 64)	-	1067MHz	-	-	1.2V	-30°C ~ 85°C (TC)	-	-	-
MT52L256M64D2GN-107 WT:B	Micron Technology Inc.	IC DRAM 16G 933MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 16Gb (256M x 64) Memory Interface: - Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存6,608	DRAM	SDRAM - Mobile LPDDR3	16Gb (256M x 64)	-	933MHz	-	-	1.2V	-30°C ~ 85°C (TC)	-	-	-
MT41K512M16HA-107 IT:A	Micron Technology Inc.	IC DRAM 8G PARALLEL 933MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 8Gb (512M x 16) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (14x9)	封裝: 96-TFBGA	庫存5,168	DRAM	SDRAM - DDR3L	8Gb (512M x 16)	Parallel	933MHz	-	20ns	1.283 V ~ 1.45 V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (14x9)
MT46H256M32L4LE-48 WT:C	Micron Technology Inc.	IC DRAM 8G PARALLEL 208MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 8Gb (256M x 32) Memory Interface: Parallel Clock Frequency: 208MHz Write Cycle Time - Word, Page: 14.4ns Access Time: 5.0ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存4,592	DRAM	SDRAM - Mobile LPDDR	8Gb (256M x 32)	Parallel	208MHz	14.4ns	5.0ns	1.7 V ~ 1.95 V	-25°C ~ 85°C (TA)	-	-	-
MT47H512M4THN-25E:M	Micron Technology Inc.	IC DRAM 2G PARALLEL 400MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 2Gb (512M x 4) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: 400ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存4,400	DRAM	SDRAM - DDR2	2Gb (512M x 4)	Parallel	400MHz	15ns	400ps	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	-	-	-
MT40A512M16HA-083E IT:A	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.2GHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 8Gb (512M x 16) Memory Interface: Parallel Clock Frequency: 1.2GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.26 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存4,112	DRAM	SDRAM - DDR4	8Gb (512M x 16)	Parallel	1.2GHz	-	-	1.14 V ~ 1.26 V	-40°C ~ 95°C (TC)	-	-	-
MT40A512M16HA-083E:A	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.2GHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 8Gb (512M x 16) Memory Interface: Parallel Clock Frequency: 1.2GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.26 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存7,712	DRAM	SDRAM - DDR4	8Gb (512M x 16)	Parallel	1.2GHz	-	-	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	-	-	-
MT41K512M8DA-093 IT:P	Micron Technology Inc.	IC DRAM 4G PARALLEL 1067MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: 1067MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (8x10.5)	封裝: 78-TFBGA	庫存7,920	DRAM	SDRAM - DDR3L	4Gb (512M x 8)	Parallel	1067MHz	-	20ns	1.283 V ~ 1.45 V	-40°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-FBGA (8x10.5)
MT41K256M16TW-093 IT:P	Micron Technology Inc.	IC DRAM 4G PARALLEL 1067MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 1067MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (8x14)	封裝: 96-TFBGA	庫存5,728	DRAM	SDRAM - DDR3L	4Gb (256M x 16)	Parallel	1067MHz	-	20ns	1.283 V ~ 1.45 V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (8x14)
MT46H64M32LFKQ-5 IT:C	Micron Technology Inc.	IC DRAM 2G PARALLEL 167MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 2Gb (64M x 32) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.0ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存4,304	DRAM	SDRAM - Mobile LPDDR	2Gb (64M x 32)	Parallel	167MHz	15ns	5.0ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	-	-	-
MT40A512M8RH-075E IT:B	Micron Technology Inc.	IC DRAM 4G PARALLEL 1.33GHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: 1.33GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.26 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存5,152	DRAM	SDRAM - DDR4	4Gb (512M x 8)	Parallel	1.33GHz	-	-	1.14 V ~ 1.26 V	-40°C ~ 95°C (TC)	-	-	-

MT25QL01GBBB8ESF-0AAT

Micron Technology Inc.

IC FLASH 1G SPI 133MHZ 16SOP2

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gb (128M x 8)
Memory Interface: SPI
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 8ms, 2.8ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOP2

封裝: 16-SOIC (0.295", 7.50mm Width)

庫存5,952

FLASH

FLASH - NOR

1Gb (128M x 8)

SPI

133MHz

8ms, 2.8ms

-

2.7 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOP2

MT25QL01GBBB8E12-0AAT

Micron Technology Inc.

IC FLASH 1G SPI 133MHZ 24TPBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gb (128M x 8)
Memory Interface: SPI
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 8ms, 2.8ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-T-PBGA (6x8)

封裝: 24-TBGA

庫存4,480

FLASH

FLASH - NOR

1Gb (128M x 8)

SPI

133MHz

8ms, 2.8ms

-

2.7 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

24-TBGA

24-T-PBGA (6x8)

MT25QL01GBBB1EW9-0SIT

Micron Technology Inc.

IC FLASH 1G SPI 133MHZ 8WPDFN

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gb (128M x 8)
Memory Interface: SPI
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 8ms, 2.8ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: 8-WPDFN (6x8) (MLP8)

封裝: -

庫存6,128

FLASH

FLASH - NOR

1Gb (128M x 8)

SPI

133MHz

8ms, 2.8ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

-

8-WPDFN (6x8) (MLP8)

MT44K32M18RB-107E:B

Micron Technology Inc.

IC DRAM 576M PARALLEL 933MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 576Mb (32M x 18)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: 8ns
Voltage - Supply: 1.28 V ~ 1.42 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存3,520

DRAM

576Mb (32M x 18)

Parallel

933MHz

-

8ns

1.28 V ~ 1.42 V

0°C ~ 95°C (TC)

-

MT44K16M36RB-107E:B

Micron Technology Inc.

IC DRAM 576M PARALLEL 933MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 576Mb (16M x 36)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: 8ns
Voltage - Supply: 1.28 V ~ 1.42 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存4,576

DRAM

576Mb (16M x 36)

Parallel

933MHz

-

8ns

1.28 V ~ 1.42 V

0°C ~ 95°C (TC)

-

MT44K32M18RB-093E:B

Micron Technology Inc.

IC DRAM 576M PARALLEL 1067MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 576Mb (32M x 18)
Memory Interface: Parallel
Clock Frequency: 1067MHz
Write Cycle Time - Word, Page: -
Access Time: 8ns
Voltage - Supply: 1.28 V ~ 1.42 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存7,744

DRAM

576Mb (32M x 18)

Parallel

1067MHz

-

8ns

1.28 V ~ 1.42 V

0°C ~ 95°C (TC)

-

MT44K16M36RB-093E IT:B

Micron Technology Inc.

IC DRAM 576M PARALLEL 1067MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 576Mb (16M x 36)
Memory Interface: Parallel
Clock Frequency: 1067MHz
Write Cycle Time - Word, Page: -
Access Time: 8ns
Voltage - Supply: 1.28 V ~ 1.42 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存6,528

DRAM

576Mb (16M x 36)

Parallel

1067MHz

-

8ns

1.28 V ~ 1.42 V

-40°C ~ 95°C (TC)

-

MT29F128G08AMCDBJ5-6IT:D

Micron Technology Inc.

IC FLASH 128G PARALLEL 167MHZ

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存5,648

FLASH

FLASH - NAND

128Gb (16G x 8)

Parallel

167MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

MTA8ATF1G64HZ-2G6E1

Micron Technology Inc.

IC DRAM 64G PARALLEL 1333MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 64Gb (1G x 64)
Memory Interface: Parallel
Clock Frequency: 1333MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存5,600

DRAM

SDRAM - DDR4

64Gb (1G x 64)

Parallel

1333MHz

-

1.2V

0°C ~ 95°C (TC)

-

MTA4ATF51264HZ-2G6E1

Micron Technology Inc.

IC DRAM 32G PARALLEL 1333MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 32Gb (512M x 64)
Memory Interface: Parallel
Clock Frequency: 1333MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存3,424

DRAM

SDRAM - DDR4

32Gb (512M x 64)

Parallel

1333MHz

-

1.2V

0°C ~ 95°C (TC)

-

MTA4ATF51264AZ-2G6E1

Micron Technology Inc.

IC DRAM 32G PARALLEL 1333MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 32Gb (512M x 64)
Memory Interface: Parallel
Clock Frequency: 1333MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存4,480

DRAM

SDRAM - DDR4

32Gb (512M x 64)

Parallel

1333MHz

-

1.2V

0°C ~ 95°C (TC)

-

MT53B512M64D4PV-053 WT:C

Micron Technology Inc.

IC DRAM 32G 1866MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gb (512M x 64)
Memory Interface: -
Clock Frequency: 1866MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存4,720

DRAM

SDRAM - Mobile LPDDR4

32Gb (512M x 64)

-

1866MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT44K32M36RB-093F:A

Micron Technology Inc.

IC DRAM 1.125G PARALLEL 1067MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 1.125Gb (32Mb x 36)
Memory Interface: Parallel
Clock Frequency: 1067MHz
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 1.28 V ~ 1.42 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存5,488

DRAM

1.125Gb (32Mb x 36)

Parallel

1067MHz

-

7.5ns

1.28 V ~ 1.42 V

0°C ~ 95°C (TC)

-

MT52L512M64D4PQ-093 WT:B

Micron Technology Inc.

IC DRAM 32G 1067MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 32Gb (512M x 64)
Memory Interface: -
Clock Frequency: 1067MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存2,624

DRAM

SDRAM - Mobile LPDDR3

32Gb (512M x 64)

-

1067MHz

-

1.2V

-30°C ~ 85°C (TC)

-

MT44K32M18RB-093F:B

Micron Technology Inc.

IC DRAM 576M PARALLEL 1067MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 576Mb (32M x 18)
Memory Interface: Parallel
Clock Frequency: 1067MHz
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 1.28 V ~ 1.42 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存3,456

DRAM

576Mb (32M x 18)

Parallel

1067MHz

-

7.5ns

1.28 V ~ 1.42 V

0°C ~ 95°C (TC)

-

MT40A1G16HBA-083E:A

Micron Technology Inc.

IC DRAM 16G PARALLEL 1.2GHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 16Gb (1G x 16)
Memory Interface: Parallel
Clock Frequency: 1.2GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.26 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存6,032

DRAM

SDRAM - DDR4

16Gb (1G x 16)

Parallel

1.2GHz

-

1.14 V ~ 1.26 V

0°C ~ 95°C (TC)

-

MT44K16M36RB-107E IT:B

Micron Technology Inc.

IC DRAM 576M PARALLEL 933MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 576Mb (16M x 36)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: 8ns
Voltage - Supply: 1.28 V ~ 1.42 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存5,776

DRAM

576Mb (16M x 36)

Parallel

933MHz

-

8ns

1.28 V ~ 1.42 V

-40°C ~ 95°C (TC)

-

MT52L256M64D2PP-093 WT:B

Micron Technology Inc.

IC DRAM 16G 1067MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 16Gb (256M x 64)
Memory Interface: -
Clock Frequency: 1067MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存4,112

DRAM

SDRAM - Mobile LPDDR3

16Gb (256M x 64)

-

1067MHz

-

1.2V

-30°C ~ 85°C (TC)

-

MT52L256M64D2GN-107 WT:B

Micron Technology Inc.

IC DRAM 16G 933MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 16Gb (256M x 64)
Memory Interface: -
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存6,608

DRAM

SDRAM - Mobile LPDDR3

16Gb (256M x 64)

-

933MHz

-

1.2V

-30°C ~ 85°C (TC)

-

MT41K512M16HA-107 IT:A

Micron Technology Inc.

IC DRAM 8G PARALLEL 933MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 8Gb (512M x 16)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (14x9)

封裝: 96-TFBGA

庫存5,168

DRAM

SDRAM - DDR3L

8Gb (512M x 16)

Parallel

933MHz

-

20ns

1.283 V ~ 1.45 V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (14x9)

MT46H256M32L4LE-48 WT:C

Micron Technology Inc.

IC DRAM 8G PARALLEL 208MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 8Gb (256M x 32)
Memory Interface: Parallel
Clock Frequency: 208MHz
Write Cycle Time - Word, Page: 14.4ns
Access Time: 5.0ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存4,592

DRAM

SDRAM - Mobile LPDDR

8Gb (256M x 32)

Parallel

208MHz

14.4ns

5.0ns

1.7 V ~ 1.95 V

-25°C ~ 85°C (TA)

-

MT47H512M4THN-25E:M

Micron Technology Inc.

IC DRAM 2G PARALLEL 400MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 2Gb (512M x 4)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存4,400

DRAM

SDRAM - DDR2

2Gb (512M x 4)

Parallel

400MHz

15ns

400ps

1.7 V ~ 1.9 V

0°C ~ 85°C (TC)

-

MT40A512M16HA-083E IT:A

Micron Technology Inc.

IC DRAM 8G PARALLEL 1.2GHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 8Gb (512M x 16)
Memory Interface: Parallel
Clock Frequency: 1.2GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.26 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存4,112

DRAM

SDRAM - DDR4

8Gb (512M x 16)

Parallel

1.2GHz

-

1.14 V ~ 1.26 V

-40°C ~ 95°C (TC)

-

MT40A512M16HA-083E:A

Micron Technology Inc.

IC DRAM 8G PARALLEL 1.2GHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 8Gb (512M x 16)
Memory Interface: Parallel
Clock Frequency: 1.2GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.26 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存7,712

DRAM

SDRAM - DDR4

8Gb (512M x 16)

Parallel

1.2GHz

-

1.14 V ~ 1.26 V

0°C ~ 95°C (TC)

-

MT41K512M8DA-093 IT:P

Micron Technology Inc.

IC DRAM 4G PARALLEL 1067MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: 1067MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (8x10.5)

封裝: 78-TFBGA

庫存7,920

DRAM

SDRAM - DDR3L

4Gb (512M x 8)

Parallel

1067MHz

-

20ns

1.283 V ~ 1.45 V

-40°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-FBGA (8x10.5)

MT41K256M16TW-093 IT:P

Micron Technology Inc.

IC DRAM 4G PARALLEL 1067MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 1067MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (8x14)

封裝: 96-TFBGA

庫存5,728

DRAM

SDRAM - DDR3L

4Gb (256M x 16)

Parallel

1067MHz

-

20ns

1.283 V ~ 1.45 V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (8x14)

MT46H64M32LFKQ-5 IT:C

Micron Technology Inc.

IC DRAM 2G PARALLEL 167MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 2Gb (64M x 32)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.0ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存4,304

DRAM

SDRAM - Mobile LPDDR

2Gb (64M x 32)

Parallel

167MHz

15ns

5.0ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

-

MT40A512M8RH-075E IT:B

Micron Technology Inc.

IC DRAM 4G PARALLEL 1.33GHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: 1.33GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.26 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存5,152

DRAM

SDRAM - DDR4

4Gb (512M x 8)

Parallel

1.33GHz

-

1.14 V ~ 1.26 V

-40°C ~ 95°C (TC)

-