頁 62 - PMIC - 閘極驅動器 | 積體電路 (IC) | 黑森爾電子
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PMIC - 閘極驅動器

記錄 7,713
頁  62/276
圖片
零件編號
製造商
描述
封裝
庫存
數量
Channel Type
Number of Drivers
Gate Type
Voltage - Supply
Logic Voltage - VIL, VIH
Current - Peak Output (Source, Sink)
Input Type
High Side Voltage - Max (Bootstrap)
Rise / Fall Time (Typ)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
FAN73711M
Fairchild/ON Semiconductor

IC GATE DVR HIGH SIDE 8-SOIC

  • Driven Configuration: High-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 25ns, 15ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存4,432
Single
1
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.5V
4A, 4A
Non-Inverting
600V
25ns, 15ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot LM5100ASDX/NOPB
Texas Instruments

IC DVR HALF-BRIDGE HV 10WSON

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 9 V ~ 14 V
  • Logic Voltage - VIL, VIH: 2.3V, -
  • Current - Peak Output (Source, Sink): 3A, 3A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 118V
  • Rise / Fall Time (Typ): 430ns, 260ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-WDFN Exposed Pad
  • Supplier Device Package: 10-WSON (4x4)
封裝: 10-WDFN Exposed Pad
庫存7,808
Independent
2
N-Channel MOSFET
9 V ~ 14 V
2.3V, -
3A, 3A
Non-Inverting
118V
430ns, 260ns
-40°C ~ 125°C (TJ)
Surface Mount
10-WDFN Exposed Pad
10-WSON (4x4)
hot IXDN409YI
IXYS

IC MOSFET DRVR 9A LOSIDE TO263-5

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3.5V
  • Current - Peak Output (Source, Sink): 9A, 9A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 10ns, 10ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
  • Supplier Device Package: TO-263 (D2Pak)
封裝: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
庫存17,052
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3.5V
9A, 9A
Non-Inverting
-
10ns, 10ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
TO-263 (D2Pak)
IXDD509SIAT/R
IXYS

IC GATE DRIVER 9A 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 30 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 9A, 9A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 23ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存2,608
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 30 V
0.8V, 2.4V
9A, 9A
Non-Inverting
-
25ns, 23ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MAX5062CASA+T
Maxim Integrated

IC MOSFET DRIVER 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 8 V ~ 12.6 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 125V
  • Rise / Fall Time (Typ): 65ns, 65ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
封裝: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
庫存6,784
Independent
2
N-Channel MOSFET
8 V ~ 12.6 V
-
2A, 2A
Non-Inverting
125V
65ns, 65ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
ISL6613BIRZ-T
Intersil

IC MOSFET DRVR SYNC BUCK 10-DFN

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 7 V ~ 13.2 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 1.25A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 36V
  • Rise / Fall Time (Typ): 26ns, 18ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-VFDFN Exposed Pad
  • Supplier Device Package: 10-DFN (3x3)
封裝: 10-VFDFN Exposed Pad
庫存7,824
Synchronous
2
N-Channel MOSFET
7 V ~ 13.2 V
-
1.25A, 2A
Non-Inverting
36V
26ns, 18ns
-40°C ~ 125°C (TJ)
Surface Mount
10-VFDFN Exposed Pad
10-DFN (3x3)
ISL6612BIB-T
Intersil

IC MOSFET DRVR SYNC BUCK 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 7 V ~ 13.2 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 1.25A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 36V
  • Rise / Fall Time (Typ): 26ns, 18ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存2,176
Synchronous
2
N-Channel MOSFET
7 V ~ 13.2 V
-
1.25A, 2A
Non-Inverting
36V
26ns, 18ns
-40°C ~ 125°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MIC5016YWM
Microchip Technology

IC DRIVER MOSF DUAL HI/LO 16SOIC

  • Driven Configuration: High-Side or Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 2.75 V ~ 30 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): -
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
封裝: 16-SOIC (0.295", 7.50mm Width)
庫存4,368
Independent
2
N-Channel MOSFET
2.75 V ~ 30 V
0.8V, 2V
-
Non-Inverting
-
-
-40°C ~ 150°C (TJ)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
IRS2334STRPBF
Infineon Technologies

IC MOSFET DRIVER

  • Driven Configuration: Half-Bridge
  • Channel Type: 3-Phase
  • Number of Drivers: 6
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 200mA, 350mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 125ns, 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 20-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 20-SOIC
封裝: 20-SOIC (0.295", 7.50mm Width)
庫存7,072
3-Phase
6
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.5V
200mA, 350mA
Non-Inverting
600V
125ns, 50ns
-40°C ~ 150°C (TJ)
Surface Mount
20-SOIC (0.295", 7.50mm Width)
20-SOIC
UC2705NG4
Texas Instruments

IC COMPLEMENTARY PWR DRVR 8-DIP

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 5 V ~ 40 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.2V
  • Current - Peak Output (Source, Sink): 1.5A, 1.5A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 60ns, 60ns
  • Operating Temperature: -25°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
封裝: 8-DIP (0.300", 7.62mm)
庫存2,400
Single
1
N-Channel MOSFET
5 V ~ 40 V
0.8V, 2.2V
1.5A, 1.5A
Inverting, Non-Inverting
-
60ns, 60ns
-25°C ~ 85°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
TC4626EPA
Microchip Technology

IC CMOS DRVR W/BOOST 1.5A 8-DIP

  • Driven Configuration: High-Side or Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4 V ~ 6 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 1.5A, 1.5A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 33ns, 27ns
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
封裝: 8-DIP (0.300", 7.62mm)
庫存2,704
Single
1
N-Channel, P-Channel MOSFET
4 V ~ 6 V
0.8V, 2.4V
1.5A, 1.5A
Inverting
-
33ns, 27ns
-40°C ~ 85°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
UCC27210DPRR
Texas Instruments

IC DVR HIGH/LOW SIDE 4A 10WSON

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 8 V ~ 17 V
  • Logic Voltage - VIL, VIH: 2.4V, 5.8V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 120V
  • Rise / Fall Time (Typ): 7.2ns, 5.5ns
  • Operating Temperature: -40°C ~ 140°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-WDFN Exposed Pad
  • Supplier Device Package: 10-WSON (4x4)
封裝: 10-WDFN Exposed Pad
庫存4,848
Independent
2
N-Channel MOSFET
8 V ~ 17 V
2.4V, 5.8V
4A, 4A
Non-Inverting
120V
7.2ns, 5.5ns
-40°C ~ 140°C (TJ)
Surface Mount
10-WDFN Exposed Pad
10-WSON (4x4)
NCV5104DR2G
ON Semiconductor

IC MOSFET DRIVER LOW SIDE 8SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.3V
  • Current - Peak Output (Source, Sink): 250mA, 500mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 85ns, 35ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存4,304
Synchronous
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.3V
250mA, 500mA
Non-Inverting
600V
85ns, 35ns
-40°C ~ 125°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
2SP0115T2A0-17
Power Integrations

IC DUAL GATE DRIVER

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT
  • Voltage - Supply: 14.5 V ~ 15.5 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 8A, 15A
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): 1700V
  • Rise / Fall Time (Typ): 5ns, 10ns
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存6,352
Independent
2
IGBT
14.5 V ~ 15.5 V
-
8A, 15A
-
1700V
5ns, 10ns
-20°C ~ 85°C (TA)
-
-
-
LM5114BMF/S7003110
Texas Instruments

IC GATE DVR 7.6A LOSIDE SOT23-6

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 12.6 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 1.3A, 7.6A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 82ns, 12.5ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6
封裝: SOT-23-6
庫存7,072
Single
1
N-Channel MOSFET
4 V ~ 12.6 V
0.8V, 2.4V
1.3A, 7.6A
Inverting, Non-Inverting
-
82ns, 12.5ns
-40°C ~ 125°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
hot IRS2113PBF
Infineon Technologies

IC DRIVER HI/LO SIDE 600V 14-DIP

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 6V, 9.5V
  • Current - Peak Output (Source, Sink): 2.5A, 2.5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 25ns, 17ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP (0.300", 7.62mm)
  • Supplier Device Package: 14-DIP
封裝: 14-DIP (0.300", 7.62mm)
庫存24,060
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
6V, 9.5V
2.5A, 2.5A
Non-Inverting
600V
25ns, 17ns
-40°C ~ 150°C (TJ)
Through Hole
14-DIP (0.300", 7.62mm)
14-DIP
hot NCP81071ADR2G
ON Semiconductor

IC MOSFET DRIVER BUCK DUAL 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 20 V
  • Logic Voltage - VIL, VIH: 1.2V, 1.8V
  • Current - Peak Output (Source, Sink): 5A, 5A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 8ns, 8ns
  • Operating Temperature: -40°C ~ 140°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存5,984
Independent
2
N-Channel MOSFET
4.5 V ~ 20 V
1.2V, 1.8V
5A, 5A
Inverting
-
8ns, 8ns
-40°C ~ 140°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot TD310IDT
STMicroelectronics

IC DRIVER MOS/IGBT TRIPLE 16SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 3
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 16 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): -
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SO
封裝: 16-SOIC (0.154", 3.90mm Width)
庫存27,504
Independent
3
IGBT, N-Channel MOSFET
4 V ~ 16 V
0.8V, 2V
-
Inverting, Non-Inverting
-
-
-40°C ~ 150°C (TJ)
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SO
hot SN75452BPSR
Texas Instruments

IC DUAL PERIPHERAL DRVR 8SO

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 500mA, 500mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 5ns, 7ns
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SO
封裝: 8-SOIC (0.209", 5.30mm Width)
庫存76,092
Independent
2
N-Channel, P-Channel MOSFET
4.75 V ~ 5.25 V
0.8V, 2V
500mA, 500mA
Non-Inverting
-
5ns, 7ns
0°C ~ 70°C (TA)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SO
FAN3223CMX-F085
ON Semiconductor

IC GATE DVR DUAL INV 4A 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 5A, 5A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 12ns, 9ns
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存3,968
Independent
2
N-Channel MOSFET
4.5 V ~ 18 V
-
5A, 5A
Inverting
-
12ns, 9ns
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
ISL89162FRTAZ-T
Renesas Electronics America

IC MOSFET DRIVER 2CH 6A 8TDFN

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 16 V
  • Logic Voltage - VIL, VIH: 1.22V, 2.08V
  • Current - Peak Output (Source, Sink): 6A, 6A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 20ns, 20ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-TDFN (3x3)
封裝: 8-WDFN Exposed Pad
庫存4,320
Independent
2
N-Channel MOSFET
4.5 V ~ 16 V
1.22V, 2.08V
6A, 6A
Inverting, Non-Inverting
-
20ns, 20ns
-40°C ~ 125°C (TJ)
Surface Mount
8-WDFN Exposed Pad
8-TDFN (3x3)
ISL6614CBZ-TR5214
Renesas Electronics America

IC DRVR DUAL SYNC BUCK 14-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 4
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 10.8 V ~ 13.2 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 1.25A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 36V
  • Rise / Fall Time (Typ): 26ns, 18ns
  • Operating Temperature: 0°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SOIC
封裝: 14-SOIC (0.154", 3.90mm Width)
庫存2,016
Synchronous
4
N-Channel MOSFET
10.8 V ~ 13.2 V
-
1.25A, 2A
Non-Inverting
36V
26ns, 18ns
0°C ~ 125°C (TJ)
Surface Mount
14-SOIC (0.154", 3.90mm Width)
14-SOIC
ISL6612IRZ
Renesas Electronics America

IC MOSFET DRVR SYNC BUCK 10-DFN

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 10.8 V ~ 13.2 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 1.25A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 36V
  • Rise / Fall Time (Typ): 26ns, 18ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-VFDFN Exposed Pad
  • Supplier Device Package: 10-DFN (3x3)
封裝: 10-VFDFN Exposed Pad
庫存4,672
Synchronous
2
N-Channel MOSFET
10.8 V ~ 13.2 V
-
1.25A, 2A
Non-Inverting
36V
26ns, 18ns
-40°C ~ 125°C (TJ)
Surface Mount
10-VFDFN Exposed Pad
10-DFN (3x3)
MPQ18021HN-A-AEC1-LF-P
Monolithic Power Systems Inc.

100V, 2.5A, HIGH-FREQUENCY, HALF

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 9V ~ 18V
  • Logic Voltage - VIL, VIH: 1V, 2.4V
  • Current - Peak Output (Source, Sink): 2.5A, 2.5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 115 V
  • Rise / Fall Time (Typ): 12ns, 9ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOICE
封裝: -
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Independent
2
N-Channel MOSFET
9V ~ 18V
1V, 2.4V
2.5A, 2.5A
Non-Inverting
115 V
12ns, 9ns
-40°C ~ 125°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOICE
FL73293MX
onsemi

IC

  • Driven Configuration: -
  • Channel Type: -
  • Number of Drivers: -
  • Gate Type: -
  • Voltage - Supply: -
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
TDA88240AUMA1
Infineon Technologies

IFX POWERSTAGE/DRIVER PG-IQFN-30

  • Driven Configuration: -
  • Channel Type: -
  • Number of Drivers: -
  • Gate Type: -
  • Voltage - Supply: -
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
RAA228006GNP-AA0
Renesas Electronics Corporation

48V INFRA 1OUT/12PH DIGITAL CONT

  • Driven Configuration: -
  • Channel Type: -
  • Number of Drivers: -
  • Gate Type: -
  • Voltage - Supply: -
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
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-
-
-
TCK424G-L3F
Toshiba Semiconductor and Storage

LOAD SWITCH (GATE DRIVER) IC WCS

  • Driven Configuration: High-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 2.7V ~ 28V
  • Logic Voltage - VIL, VIH: 0.4V, 1.2V
  • Current - Peak Output (Source, Sink): -
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFBGA, WLCSP
  • Supplier Device Package: 6-WCSPG (0.8x1.2)
封裝: -
庫存29,985
Single
1
N-Channel MOSFET
2.7V ~ 28V
0.4V, 1.2V
-
Non-Inverting
-
-
-40°C ~ 85°C (TA)
Surface Mount
6-XFBGA, WLCSP
6-WCSPG (0.8x1.2)