圖片 |
零件編號 |
製造商 |
描述 |
封裝 |
庫存 |
數量 |
Channel Type | Number of Drivers | Gate Type | Voltage - Supply | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | Input Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Intersil |
IC MOSFET DRIVER 2CH 6A 8SOIC
|
封裝: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
庫存5,008 |
|
Independent | 2 | N-Channel MOSFET | 4.5 V ~ 16 V | 1.22V, 2.08V | 6A, 6A | Inverting, Non-Inverting | - | 20ns, 20ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
||
Fairchild/ON Semiconductor |
IC MOSFET HALF BRIDGE DVR 16SOIC
|
封裝: 16-SOIC (0.154", 3.90mm Width) |
庫存6,224 |
|
Synchronous | 4 | N-Channel MOSFET | 10 V ~ 13.5 V | 0.8V, 2V | - | Non-Inverting | - | 30ns, 25ns | 0°C ~ 125°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
||
IXYS |
IC DRVR HALF BRIDGE 4A 16-SOIC
|
封裝: 16-SOIC (0.295", 7.50mm Width) |
庫存4,512 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 35 V | 6V, 7V | 4A, 4A | Non-Inverting | 650V | 23ns, 22ns | -40°C ~ 150°C (TJ) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
||
Intersil |
IC MOSFET DRVR SYNC BUCK 8EPSOIC
|
封裝: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
庫存4,624 |
|
Synchronous | 2 | N-Channel MOSFET | 10.8 V ~ 13.2 V | - | 1.25A, 2A | Non-Inverting | 36V | 26ns, 18ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
||
Intersil |
IC PIN DRIVER 40MHZ 3ST 8-SOIC
|
封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存5,968 |
|
Synchronous | 2 | IGBT | 4.5 V ~ 16.5 V | 0.8V, 2.4V | 3.5A, 3.5A | Non-Inverting | - | 14.5ns, 15ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Microchip Technology |
IC DRIVER MOSFET 3A DUAL 16-SOIC
|
封裝: 16-SOIC (0.295", 7.50mm Width) |
庫存2,544 |
|
Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 3A, 3A | Inverting, Non-Inverting | - | 28ns, 32ns | 0°C ~ 150°C (TJ) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
||
Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 14-DIP
|
封裝: 14-DIP (0.300", 7.62mm) |
庫存258,420 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 600V | 100ns, 35ns | -40°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-DIP |
||
Maxim Integrated |
POWER MOSFET DRIVER
|
封裝: - |
庫存2,480 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
||
IXYS Integrated Circuits Division |
14A 8LEAD SOIC EXP MTL INVERTING
|
封裝: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
庫存6,224 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 14A, 14A | Inverting | - | 25ns, 18ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
||
IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV TO263-5
|
封裝: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA |
庫存19,368 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-6, D2Pak (5 Leads + Tab), TO-263BA | TO-263-5 |
||
IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV TO220-5
|
封裝: TO-220-5 |
庫存4,816 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 9A, 9A | Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
||
Microchip Technology |
IC MOSFET DVR 3A DUAL HS 8DFN
|
封裝: 8-VDFN Exposed Pad |
庫存2,448 |
|
Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 4.5A, 4.5A | Non-Inverting | - | 12ns, 12ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-S (6x5) |
||
Microchip Technology |
IC MOSFET DRIVER 6A INV 8DIP
|
封裝: 8-DIP (0.300", 7.62mm) |
庫存193,668 |
|
Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 6A, 6A | Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
||
Microchip Technology |
IC MOSFET DVR 1.5A DUAL HS 8-DIP
|
封裝: 8-DIP (0.300", 7.62mm) |
庫存202,104 |
|
Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 19ns, 19ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
||
Infineon Technologies |
HI/LO SIDE DRVR 8SOIC
|
封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存243,156 |
|
Independent | 2 | N-Channel MOSFET | 10 V ~ 20 V | 0.7V, 2.2V | 1A, 1A | Inverting | 200V | 35ns, 20ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Infineon Technologies |
IC IGBT DVR 1200V DSO8
|
封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存5,360 |
|
Single | 1 | IGBT | 13 V ~ 18 V | 1.5V, 3.5V | 4.4A, 4.1A | Inverting, Non-Inverting | 1200V | 9ns, 6ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | PG-DSO-8-51 |
||
Infineon Technologies |
IC GATE DRVR 8DSO
|
封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存5,264 |
|
Independent | 2 | N-Channel MOSFET | 4.5 V ~ 20 V | - | 5A, 5A | Inverting | - | 5.3ns, 4.5ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | PG-DSO-8 |
||
Maxim Integrated |
IC MOSFET DRIVER HS SOT23
|
封裝: SOT-23-6 |
庫存17,832 |
|
Single | 1 | N-Channel MOSFET | 4 V ~ 14 V | 0.8V, 2V | 3A, 7A | Inverting, Non-Inverting | - | 28ns, 13ns | -40°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |
||
Maxim Integrated |
IC MOSFET DRVR DUAL INV 8-SOIC
|
封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存3,296 |
|
Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 20ns, 20ns | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Renesas Electronics America |
IC MOSFET DRVR SYNC BUCK 10-DFN
|
封裝: 10-VFDFN Exposed Pad |
庫存20,376 |
|
Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 5.5 V | - | -, 4A | Non-Inverting | 36V | 8ns, 8ns | -40°C ~ 125°C (TJ) | Surface Mount | 10-VFDFN Exposed Pad | 10-DFN (3x3) |
||
Power Integrations |
MODULE GATE DVR P&P SCALE 1
|
封裝: - |
庫存4,448 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
||
Renesas Electronics America |
IC DRVR DUAL SYNC BUCK 14-SOIC
|
封裝: 14-SOIC (0.154", 3.90mm Width) |
庫存4,032 |
|
Synchronous | 4 | N-Channel MOSFET | 10.8 V ~ 13.2 V | - | 1.25A, 2A | Non-Inverting | 36V | 26ns, 18ns | 0°C ~ 125°C (TJ) | Surface Mount | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
||
Renesas Electronics America |
IC DVR PIN 40MHZ 3STATE 8DIP
|
封裝: 8-DIP (0.300", 7.62mm) |
庫存3,616 |
|
Synchronous | 2 | IGBT | 4.5 V ~ 16.5 V | 0.8V, 2.4V | 3.5A, 3.5A | Non-Inverting | - | 14.5ns, 15ns | -40°C ~ 125°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
||
Linear Technology |
HI V SYNC N-CH MOSFET DRVR
|
封裝: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad |
庫存6,304 |
|
Independent | 2 | N-Channel MOSFET | 7.2V ~ 13.5V | 1.85V, 3.25V | 2.5A, 3A | Inverting | 114V | 8ns, 5ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-MSOP-EP |
||
Renesas Electronics Corporation |
HALF BRIDGE BASED MOSFET DRIVER
|
封裝: - |
Request a Quote |
|
Independent | 1 | N-Channel MOSFET | 4.5V ~ 16V | 0.8V, 2.6V | - | TTL | 25 V | - | -40°C ~ 150°C (TJ) | Surface Mount | 40-WFQFN Exposed Pad | 40-QFN (6x6) |
||
Analog Devices Inc./Maxim Integrated |
SPI / PARALLEL CONTROLLED QUAD L
|
封裝: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
||
GaNPower |
IC GaN Power 650V 8A DFN6x8
|
封裝: - |
Request a Quote |
|
Single | 1 | Enhanced Mode GaN FET | 3V ~ 8V | - | - | Non-Inverting | - | 8ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN Exposed Pad | 8-DFN (6x8) |
||
Power Integrations |
IGBT DRIVER P/P 1CH COATING
|
封裝: - |
Request a Quote |
|
Single | 1 | IGBT | 15.5V ~ 16.8V | - | 6A, 10A | - | 1200 V | 100ns, 100ns | -40°C ~ 85°C | Chassis Mount | Module | Module |