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記錄 62,144
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圖片
零件編號
製造商
描述
封裝
庫存
數量
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
NAND512R3A2SN6F
Micron Technology Inc.

IC FLASH 512MBIT 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 512Mb (64M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 50ns
  • Access Time: 50ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP
封裝: 48-TFSOP (0.724", 18.40mm Width)
庫存3,504
FLASH
FLASH - NAND
512Mb (64M x 8)
Parallel
-
50ns
50ns
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP
MT41J128M8JP-15E:G TR
Micron Technology Inc.

IC SDRAM 1GBIT 667MHZ 78FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 667MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.425 V ~ 1.575 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-TFBGA
  • Supplier Device Package: 78-FBGA (8x11.5)
封裝: 78-TFBGA
庫存4,336
DRAM
SDRAM - DDR3
1Gb (128M x 8)
Parallel
667MHz
-
-
1.425 V ~ 1.575 V
0°C ~ 95°C (TC)
Surface Mount
78-TFBGA
78-FBGA (8x11.5)
hot RC28F256M29EWHA
Micron Technology Inc.

IC FLASH 256MBIT 100NS 64FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (32M x 8, 16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-FBGA (11x13)
封裝: 64-LBGA
庫存14,880
FLASH
FLASH - NOR
256Mb (32M x 8, 16M x 16)
Parallel
-
100ns
100ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
64-LBGA
64-FBGA (11x13)
IDT709199L7PF8
IDT, Integrated Device Technology Inc

IC SRAM 1.125MBIT 7NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous
  • Memory Size: 1.125Mb (128K x 9)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 7.5ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
封裝: 100-LQFP
庫存6,064
SRAM
SRAM - Dual Port, Synchronous
1.125Mb (128K x 9)
Parallel
-
-
7.5ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
IS42S16800E-75ETL-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 133MHZ 54TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 128Mb (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
封裝: 54-TSOP (0.400", 10.16mm Width)
庫存4,144
DRAM
SDRAM
128Mb (8M x 16)
Parallel
133MHz
-
5.4ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
7026L35J8
IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 35NS 84PLCC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 256Kb (16K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 35ns
  • Access Time: 35ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 84-LCC (J-Lead)
  • Supplier Device Package: 84-PLCC (29.21x29.21)
封裝: 84-LCC (J-Lead)
庫存2,288
SRAM
SRAM - Dual Port, Asynchronous
256Kb (16K x 16)
Parallel
-
35ns
35ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
84-LCC (J-Lead)
84-PLCC (29.21x29.21)
70261S55PF8
IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 55NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 256Kb (16K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
封裝: 100-LQFP
庫存6,400
SRAM
SRAM - Dual Port, Asynchronous
256Kb (16K x 16)
Parallel
-
55ns
55ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
IS45S16320D-7CTLA1
ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 143MHZ 54TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 512Mb (32M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 143MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
封裝: 54-TSOP (0.400", 10.16mm Width)
庫存5,488
DRAM
SDRAM
512Mb (32M x 16)
Parallel
143MHz
-
5.4ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
AS7C31026B-12JCN
Alliance Memory, Inc.

IC SRAM 1MBIT 12NS 44SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (64K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package: 44-SOJ
封裝: 44-BSOJ (0.400", 10.16mm Width)
庫存6,240
SRAM
SRAM - Asynchronous
1Mb (64K x 16)
Parallel
-
12ns
12ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
44-BSOJ (0.400", 10.16mm Width)
44-SOJ
S34ML04G100BHA000
Cypress Semiconductor Corp

IC FLASH 4GBIT 25NS 63BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 4Gb (512M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 63-VFBGA
  • Supplier Device Package: 63-BGA (11x9)
封裝: 63-VFBGA
庫存5,568
FLASH
FLASH - NAND
4Gb (512M x 8)
Parallel
-
25ns
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
63-VFBGA
63-BGA (11x9)
hot BQ2024DBZR
Texas Instruments

IC OTP 1.5KBIT SDQ SOT23-3

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 1.5K (6 pages x 32 bytes)
  • Memory Interface: Single Wire
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.65 V ~ 5.5 V
  • Operating Temperature: -20°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存12,684
EPROM
EPROM - OTP
1.5K (6 pages x 32 bytes)
Single Wire
-
-
-
2.65 V ~ 5.5 V
-20°C ~ 70°C (TA)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
hot CY7C1071DV33-12BAXI
Cypress Semiconductor Corp

IC SRAM 32MBIT 12NS 48FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 32Mb (2M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-FBGA (8x9.5)
封裝: 48-TFBGA
庫存27,000
SRAM
SRAM - Asynchronous
32Mb (2M x 16)
Parallel
-
12ns
12ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFBGA
48-FBGA (8x9.5)
NM24C02LN
ON Semiconductor

IC EEPROM 2K I2C 100KHZ 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: I²C
  • Clock Frequency: 100kHz
  • Write Cycle Time - Word, Page: 15ms
  • Access Time: 3.5µs
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
封裝: 8-DIP (0.300", 7.62mm)
庫存4,832
EEPROM
EEPROM
2Kb (256 x 8)
I²C
100kHz
15ms
3.5µs
2.7 V ~ 5.5 V
0°C ~ 70°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-DIP
S70KL1281DABHI020
Cypress Semiconductor Corp

IC 128 MB FLASH MEMORY

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存3,872
-
-
-
-
-
-
-
-
-
-
-
-
IS46DR81280C-3DBLA2-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 1G PARALLEL 60TWBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 333MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 450ps
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: -40°C ~ 105°C
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-TWBGA (8x10.5)
封裝: 60-TFBGA
庫存6,576
DRAM
SDRAM - DDR2
1Gb (128M x 8)
Parallel
333MHz
15ns
450ps
1.7 V ~ 1.9 V
-40°C ~ 105°C
Surface Mount
60-TFBGA
60-TWBGA (8x10.5)
MTA4ATF51264AZ-2G6E1
Micron Technology Inc.

IC DRAM 32G PARALLEL 1333MHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 32Gb (512M x 64)
  • Memory Interface: Parallel
  • Clock Frequency: 1333MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.2V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存4,480
DRAM
SDRAM - DDR4
32Gb (512M x 64)
Parallel
1333MHz
-
-
1.2V
0°C ~ 95°C (TC)
-
-
-
MX25UM25345GBEI00
Macronix

MEMORY

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 256Mbit
  • Memory Interface: SPI - Octal I/O, DTR
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: 60µs, 750µs
  • Access Time: 5 ns
  • Voltage - Supply: 1.65V ~ 2V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 49-XFBGA, WLCSP
  • Supplier Device Package: 49-WLCSP
封裝: -
Request a Quote
FLASH
FLASH - NOR (SLC)
256Mbit
SPI - Octal I/O, DTR
200 MHz
60µs, 750µs
5 ns
1.65V ~ 2V
-40°C ~ 85°C (TA)
Surface Mount
49-XFBGA, WLCSP
49-WLCSP
70V26L12J8
Renesas Electronics Corporation

IC RAM DUAL PORT

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 256Kbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 84-LCC (J-Lead)
  • Supplier Device Package: 84-PLCC (29.31x29.31)
封裝: -
Request a Quote
SRAM
SRAM - Dual Port, Asynchronous
256Kbit
Parallel
-
12ns
12 ns
3V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
84-LCC (J-Lead)
84-PLCC (29.31x29.31)
MT60B2G8RZ-56B-D
Micron Technology Inc.

DDR5 16GBIT 8 78/117 VFBGA 1 CT

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
MT53E768M64D4HJ-046-AAT-B-TR
Micron Technology Inc.

LPDDR4 48G 768MX64 FBGA QDP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4X
  • Memory Size: 48Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 2.133 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 556-TFBGA
  • Supplier Device Package: 556-WFBGA (12.4x12.4)
封裝: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4X
48Gbit
Parallel
2.133 GHz
18ns
3.5 ns
1.06V ~ 1.17V
-40°C ~ 105°C (TC)
Surface Mount
556-TFBGA
556-WFBGA (12.4x12.4)
MT29F8T08GQLCEG8-QB-C
Micron Technology Inc.

QLC 8T 1TX8 FBGA 8DP

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
IS49NLC96400A-18WBLI
ISSI, Integrated Silicon Solution Inc

RLDRAM2 Memory, 576Mbit, x9, Com

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: RLDRAM 2
  • Memory Size: 576Mbit
  • Memory Interface: HSTL
  • Clock Frequency: 533 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 15 ns
  • Voltage - Supply: 1.7V ~ 1.9V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 144-TFBGA
  • Supplier Device Package: 144-TWBGA (11x18.5)
封裝: -
Request a Quote
DRAM
RLDRAM 2
576Mbit
HSTL
533 MHz
-
15 ns
1.7V ~ 1.9V
-40°C ~ 85°C (TA)
Surface Mount
144-TFBGA
144-TWBGA (11x18.5)
GD25LQ80CEIGR
GigaDevice Semiconductor (HK) Limited

IC FLASH 8MBIT SPI/QUAD 8USON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 8Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 104 MHz
  • Write Cycle Time - Word, Page: 50µs, 2.4ms
  • Access Time: -
  • Voltage - Supply: 1.65V ~ 2.1V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-XFDFN Exposed Pad
  • Supplier Device Package: 8-USON (2x3)
封裝: -
Request a Quote
FLASH
FLASH - NOR
8Mbit
SPI - Quad I/O
104 MHz
50µs, 2.4ms
-
1.65V ~ 2.1V
-40°C ~ 85°C (TA)
Surface Mount
8-XFDFN Exposed Pad
8-USON (2x3)
R1QDA7218ABG-20IB0
Renesas Electronics Corporation

STANDARD SRAM, 4MX18, 0.45NS

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
NDL26PFJ-8KET-TR
Insignis Technology Corporation

IC DRAM 2GBIT PARALLEL 96FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 2Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 800 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-VFBGA
  • Supplier Device Package: 96-FBGA (7.5x13)
封裝: -
Request a Quote
DRAM
SDRAM - DDR3L
2Gbit
Parallel
800 MHz
15ns
20 ns
1.283V ~ 1.45V
0°C ~ 95°C (TC)
Surface Mount
96-VFBGA
96-FBGA (7.5x13)
IS62WV2568FBLL-45BLI
ISSI, Integrated Silicon Solution Inc

2Mb, Low Power/Power Saver,Async

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 2Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45 ns
  • Voltage - Supply: 2.2V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 36-TFBGA
  • Supplier Device Package: 36-TFBGA (6x8)
封裝: -
Request a Quote
SRAM
SRAM - Asynchronous
2Mbit
Parallel
-
45ns
45 ns
2.2V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
36-TFBGA
36-TFBGA (6x8)
S79FL01GSDSBHBC13
Infineon Technologies

IC FLASH 1GBIT SPI 80MHZ 24BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 1Gbit
  • Memory Interface: SPI
  • Clock Frequency: 80 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-BGA (8x6)
封裝: -
Request a Quote
FLASH
FLASH - NOR
1Gbit
SPI
80 MHz
-
-
2.7V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
24-TBGA
24-BGA (8x6)
MT58L512Y36PF-6
Micron Technology Inc.

IC SRAM 18MBIT PARALLEL 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM
  • Memory Size: 18Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.5 ns
  • Voltage - Supply: 3.135V ~ 3.465V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-FBGA (13x15)
封裝: -
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SRAM
SRAM
18Mbit
Parallel
166 MHz
-
3.5 ns
3.135V ~ 3.465V
0°C ~ 70°C (TA)
Surface Mount
165-TBGA
165-FBGA (13x15)