頁 895 - 記憶體 | 積體電路 (IC) | 黑森爾電子
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記憶體

記錄 62,144
頁  895/2,220
圖片
零件編號
製造商
描述
封裝
庫存
數量
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot AT24C512BN-SH25-B
Microchip Technology

IC EEPROM 512KBIT 1MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 550ns
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存164,592
EEPROM
EEPROM
512Kb (64K x 8)
I2C
1MHz
5ms
550ns
2.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot IS64LV51216-12TLA3
ISSI, Integrated Silicon Solution Inc

IC SRAM 8MBIT 12NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 8Mb (512K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12ns
  • Voltage - Supply: 3.135 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
封裝: 44-TSOP (0.400", 10.16mm Width)
庫存35,376
SRAM
SRAM - Asynchronous
8Mb (512K x 16)
Parallel
-
12ns
12ns
3.135 V ~ 3.6 V
-40°C ~ 125°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
DS1245WP-100+
Maxim Integrated

IC NVSRAM 1MBIT 100NS 34PCM

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 34-PowerCap? Module
  • Supplier Device Package: 34-PowerCap Module
封裝: 34-PowerCap? Module
庫存4,592
NVSRAM
NVSRAM (Non-Volatile SRAM)
1Mb (128K x 8)
Parallel
-
100ns
100ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
34-PowerCap? Module
34-PowerCap Module
EDB5432BEBH-1DIT-F-D
Micron Technology Inc.

IC SDRAM 512MBIT 533MHZ 134VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR2
  • Memory Size: 512Mb (16M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 533MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 134-VFBGA
  • Supplier Device Package: 134-VFBGA (10x11.5)
封裝: 134-VFBGA
庫存2,640
DRAM
SDRAM - Mobile LPDDR2
512Mb (16M x 32)
Parallel
533MHz
-
-
1.14 V ~ 1.95 V
-40°C ~ 85°C (TC)
Surface Mount
134-VFBGA
134-VFBGA (10x11.5)
S25FL128SDSNFI001
Cypress Semiconductor Corp

NOR

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (16M x 8)
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 80MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存3,792
FLASH
FLASH - NOR
128Mb (16M x 8)
SPI - Quad I/O
80MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-
IS61LV6416-8KL-TR
ISSI, Integrated Silicon Solution Inc

IC SRAM 1MBIT 8NS 44SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (64K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 8ns
  • Access Time: 8ns
  • Voltage - Supply: 3.135 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package: 44-SOJ
封裝: 44-BSOJ (0.400", 10.16mm Width)
庫存6,176
SRAM
SRAM - Asynchronous
1Mb (64K x 16)
Parallel
-
8ns
8ns
3.135 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
44-BSOJ (0.400", 10.16mm Width)
44-SOJ
M24512-RMC6TG
STMicroelectronics

IC EEPROM 512KBIT 1MHZ 8UFDFPN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 500ns
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UFDFN Exposed Pad
  • Supplier Device Package: 8-UFDFPN (2x3)
封裝: 8-UFDFN Exposed Pad
庫存5,536
EEPROM
EEPROM
512Kb (64K x 8)
I2C
1MHz
5ms
500ns
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-UFDFN Exposed Pad
8-UFDFPN (2x3)
M95320-DRDW6TP
STMicroelectronics

IC EEPROM 32KBIT 5MHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 32Kb (4K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 20MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
封裝: 8-TSSOP (0.173", 4.40mm Width)
庫存6,208
EEPROM
EEPROM
32Kb (4K x 8)
SPI
20MHz
5ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
24LC025/P
Microchip Technology

IC EEPROM 2KBIT 400KHZ 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
封裝: 8-DIP (0.300", 7.62mm)
庫存4,176
EEPROM
EEPROM
2Kb (256 x 8)
I2C
400kHz
5ms
900ns
2.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
hot S29GL128P90TFCR10
Cypress Semiconductor Corp

IC FLASH 128MBIT 90NS 56TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (16M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 90ns
  • Access Time: 90ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 56-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 56-TSOP
封裝: 56-TFSOP (0.724", 18.40mm Width)
庫存83,568
FLASH
FLASH - NOR
128Mb (16M x 8)
Parallel
-
90ns
90ns
3 V ~ 3.6 V
0°C ~ 85°C (TA)
Surface Mount
56-TFSOP (0.724", 18.40mm Width)
56-TSOP
S29GL128S90FHI010
Cypress Semiconductor Corp

IC FLASH 128MBIT 90NS 64BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 90ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-Fortified BGA (13x11)
封裝: 64-LBGA
庫存7,440
FLASH
FLASH - NOR
128Mb (8M x 16)
Parallel
-
60ns
90ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
64-LBGA
64-Fortified BGA (13x11)
hot NM27C010T120
ON Semiconductor

IC EPROM 1M PARALLEL 32TSOP

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 120ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 32-TSOP
封裝: 32-TFSOP (0.724", 18.40mm Width)
庫存15,312
EPROM
EPROM - OTP
1Mb (128K x 8)
Parallel
-
-
120ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
32-TFSOP (0.724", 18.40mm Width)
32-TSOP
S29GL128S10DHV013
Cypress Semiconductor Corp

IC FLASH 128M PARALLEL 64BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 100ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-FBGA (9x9)
封裝: 64-LBGA
庫存6,976
FLASH
FLASH - NOR
128Mb (8M x 16)
Parallel
-
60ns
100ns
2.7 V ~ 3.6 V
-40°C ~ 105°C (TA)
Surface Mount
64-LBGA
64-FBGA (9x9)
AS4C64M16D3B-12BCNTR
Alliance Memory, Inc.

IC DRAM 1G PARALLEL 96FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 1Gb (64M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 800MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20ns
  • Voltage - Supply: 1.425 V ~ 1.575 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-FBGA (13x9)
封裝: 96-TFBGA
庫存2,912
DRAM
SDRAM - DDR3
1Gb (64M x 16)
Parallel
800MHz
15ns
20ns
1.425 V ~ 1.575 V
0°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-FBGA (13x9)
MX30UF1G16AC-XQI
Macronix

IC FLASH 1GBIT

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存4,000
-
-
-
-
-
-
-
-
-
-
-
-
IS61NLP102418-200B3I-TR
ISSI, Integrated Silicon Solution Inc

IC SRAM 18M PARALLEL 165TFBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 18Mb (1M x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.1ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-TFBGA (13x15)
封裝: 165-TBGA
庫存4,848
SRAM
SRAM - Synchronous
18Mb (1M x 18)
Parallel
200MHz
-
3.1ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
165-TBGA
165-TFBGA (13x15)
709089L15PFI8
IDT, Integrated Device Technology Inc

IC SRAM 512K PARALLEL 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 15ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
封裝: 100-LQFP
庫存4,032
SRAM
SRAM - Dual Port, Synchronous
512Kb (64K x 8)
Parallel
-
-
15ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
MT29F1G08ABAEAM68M3WC1
Micron Technology Inc.

IC FLASH 1G PARALLEL WAFER

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存3,168
FLASH
FLASH - NAND
1Gb (128M x 8)
Parallel
-
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
24LC32AT-I/MS16KVAO
Microchip Technology

32K 4KX8 2.5V SER EE IND

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 32Kb (4K x 8)
  • Memory Interface: I²C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 2.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 8-MSOP
封裝: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
庫存5,104
EEPROM
EEPROM
32Kb (4K x 8)
I²C
400kHz
5ms
900ns
2.5V ~ 5.5V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
8-MSOP
MT29VZZZAD8FQFSL-046-WJ-G8K-TR
Micron Technology Inc.

UMCP 544G

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
M30042040054X0ISAR
Renesas Electronics Corporation

IC RAM 4MBIT 54MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: RAM
  • Technology: MRAM (Magnetoresistive RAM)
  • Memory Size: 4Mbit
  • Memory Interface: -
  • Clock Frequency: 54 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOIC
封裝: -
Request a Quote
RAM
MRAM (Magnetoresistive RAM)
4Mbit
-
54 MHz
-
-
2.7V ~ 3.6V
-40°C ~ 85°C
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOIC
CAT25128XE
onsemi

IC EEPROM 128KBIT SPI 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 128Kbit
  • Memory Interface: SPI
  • Clock Frequency: 10 MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.8V ~ 5.5V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOIC
封裝: -
Request a Quote
EEPROM
EEPROM
128Kbit
SPI
10 MHz
5ms
-
1.8V ~ 5.5V
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOIC
MT62F1536M64D8CZ-023-FAAT-C
Micron Technology Inc.

LPDDR5 96GBIT 64 561/570 TFBGA 8

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
7140SA55JI
Renesas Electronics Corporation

IC SRAM

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 8Kbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 52-LCC (J-Lead)
  • Supplier Device Package: 52-PLCC (19.13x19.13)
封裝: -
Request a Quote
SRAM
SRAM - Dual Port, Asynchronous
8Kbit
Parallel
-
55ns
55 ns
4.5V ~ 5.5V
-40°C ~ 85°C (TA)
Surface Mount
52-LCC (J-Lead)
52-PLCC (19.13x19.13)
CG8733AFT
Infineon Technologies

IC BT BLE IEEE 802.15.4

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
MX25V80066ZNI02
Macronix

MEMORY

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 8Mbit
  • Memory Interface: SPI
  • Clock Frequency: 80 MHz
  • Write Cycle Time - Word, Page: 200µs, 5ms
  • Access Time: 8 ns
  • Voltage - Supply: 2.3V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (6x5)
封裝: -
Request a Quote
FLASH
FLASH - NOR (SLC)
8Mbit
SPI
80 MHz
200µs, 5ms
8 ns
2.3V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (6x5)
IS66WVS2M8ALL-104NLI
ISSI, Integrated Silicon Solution Inc

IC PSRAM 16MBIT SPI QPI 8SOIC

  • Memory Type: Volatile
  • Memory Format: PSRAM
  • Technology: PSRAM (Pseudo SRAM)
  • Memory Size: 16Mbit
  • Memory Interface: SPI, QPI
  • Clock Frequency: 104 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 7 ns
  • Voltage - Supply: 1.65V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封裝: -
庫存1,227
PSRAM
PSRAM (Pseudo SRAM)
16Mbit
SPI, QPI
104 MHz
-
7 ns
1.65V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MT55L128L32F1T-10
Micron Technology Inc.

IC SRAM 4MBIT PAR 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - ZBT
  • Memory Size: 4Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 100 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 7.5 ns
  • Voltage - Supply: 3.135V ~ 3.465V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20.1)
封裝: -
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SRAM
SRAM - ZBT
4Mbit
Parallel
100 MHz
-
7.5 ns
3.135V ~ 3.465V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20.1)