頁 805 - 記憶體 | 積體電路 (IC) | 黑森爾電子
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記憶體

記錄 62,144
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圖片
零件編號
製造商
描述
封裝
庫存
數量
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MT29F256G08CMAAAC5:A
Micron Technology Inc.

IC FLASH 256GBIT 52VLGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 256Gb (32G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 52-VLGA
  • Supplier Device Package: 52-VLGA (18x14)
封裝: 52-VLGA
庫存5,312
FLASH
FLASH - NAND
256Gb (32G x 8)
Parallel
-
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
52-VLGA
52-VLGA (18x14)
hot MT29F16G08ABABAWP-IT:B TR
Micron Technology Inc.

IC FLASH 16GBIT 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 16Gb (2G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
封裝: 48-TFSOP (0.724", 18.40mm Width)
庫存17,220
FLASH
FLASH - NAND
16Gb (2G x 8)
Parallel
-
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
CY14E256L-SZ25XI
Cypress Semiconductor Corp

IC NVSRAM 256KBIT 25NS 32SOIC

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 32-SOIC
封裝: 32-SOIC (0.295", 7.50mm Width)
庫存6,720
NVSRAM
NVSRAM (Non-Volatile SRAM)
256Kb (32K x 8)
Parallel
-
25ns
25ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
32-SOIC (0.295", 7.50mm Width)
32-SOIC
IDT71V3577SA80BGGI8
IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 8NS 119BGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 4.5Mb (128K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 8ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 119-BGA
  • Supplier Device Package: 119-PBGA (14x22)
封裝: 119-BGA
庫存5,632
SRAM
SRAM - Synchronous
4.5Mb (128K x 36)
Parallel
-
-
8ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
119-BGA
119-PBGA (14x22)
NAND128W3A0BN6F TR
Micron Technology Inc.

IC FLASH 128MBIT 50NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 128Mb (16M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 50ns
  • Access Time: 50ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP
封裝: 48-TFSOP (0.724", 18.40mm Width)
庫存6,336
FLASH
FLASH - NAND
128Mb (16M x 8)
Parallel
-
50ns
50ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP
AT28C256E-15SI
Microchip Technology

IC EEPROM 256KBIT 150NS 28SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 150ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 28-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 28-SOIC
封裝: 28-SOIC (0.295", 7.50mm Width)
庫存5,952
EEPROM
EEPROM
256Kb (32K x 8)
Parallel
-
10ms
150ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
28-SOIC (0.295", 7.50mm Width)
28-SOIC
hot AT27C010-12JC
Microchip Technology

IC OTP 1MBIT 120NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 120ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
封裝: 32-LCC (J-Lead)
庫存309,480
EPROM
EPROM - OTP
1Mb (128K x 8)
Parallel
-
-
120ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC
70P255L65BYGI
IDT, Integrated Device Technology Inc

IC SRAM 128KBIT 65NS 100FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 128Kb (8K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 65ns
  • Access Time: 65ns
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-TFBGA
  • Supplier Device Package: 100-CABGA (6x6)
封裝: 100-TFBGA
庫存2,816
SRAM
SRAM - Dual Port, Asynchronous
128Kb (8K x 16)
Parallel
-
65ns
65ns
1.7 V ~ 1.9 V
-40°C ~ 85°C (TA)
Surface Mount
100-TFBGA
100-CABGA (6x6)
IS42VM32160D-75BLI
ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 133MHZ 90BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile
  • Memory Size: 512Mb (16M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 6ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-TFBGA (8x13)
封裝: 90-TFBGA
庫存4,224
DRAM
SDRAM - Mobile
512Mb (16M x 32)
Parallel
133MHz
-
6ns
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
90-TFBGA
90-TFBGA (8x13)
CY62158H-45ZSXI
Cypress Semiconductor Corp

MICROPOWER SRAMS

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 8Mb (1M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存6,496
SRAM
SRAM - Asynchronous
8Mb (1M x 8)
Parallel
-
45ns
45ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
-
-
-
71321LA45J8
IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 45NS 52PLCC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 52-LCC (J-Lead)
  • Supplier Device Package: 52-PLCC (19.13x19.13)
封裝: 52-LCC (J-Lead)
庫存7,264
SRAM
SRAM - Dual Port, Asynchronous
16Kb (2K x 8)
Parallel
-
45ns
45ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
52-LCC (J-Lead)
52-PLCC (19.13x19.13)
AS7C32098A-12TCN
Alliance Memory, Inc.

IC SRAM 2MBIT 12NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 2Mb (128K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
封裝: 44-TSOP (0.400", 10.16mm Width)
庫存5,952
SRAM
SRAM - Asynchronous
2Mb (128K x 16)
Parallel
-
12ns
12ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
AS7C1024B-15JCNTR
Alliance Memory, Inc.

IC SRAM 1MBIT 15NS 32SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 15ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package: 32-SOJ
封裝: 32-BSOJ (0.400", 10.16mm Width)
庫存4,336
SRAM
SRAM - Asynchronous
1Mb (128K x 8)
Parallel
-
15ns
15ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
32-BSOJ (0.400", 10.16mm Width)
32-SOJ
AT88SC0404CA-MPTG
Microchip Technology

IC EEPROM 4KBIT 4MHZ M2P

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (512 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 4MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 250ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: M2 P, Smart Card Module (TWI)
  • Supplier Device Package: M2 - P Module (TWI)
封裝: M2 P, Smart Card Module (TWI)
庫存5,904
EEPROM
EEPROM
4Kb (512 x 8)
I2C
4MHz
5ms
250ns
2.7 V ~ 3.6 V
0°C ~ 70°C (TC)
Surface Mount
M2 P, Smart Card Module (TWI)
M2 - P Module (TWI)
hot M95010-RDW6TP
STMicroelectronics

IC EEPROM 1KBIT 5MHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (128 x 8)
  • Memory Interface: SPI
  • Clock Frequency: 20MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
封裝: 8-TSSOP (0.173", 4.40mm Width)
庫存135,828
EEPROM
EEPROM
1Kb (128 x 8)
SPI
20MHz
5ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
MX68GL1G0GHT2I-10G
Macronix

IC FLASH 1GBIT

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存2,416
-
-
-
-
-
-
-
-
-
-
-
-
S29GL256S10FHI010
Cypress Semiconductor Corp

IC FLASH 256M PARALLEL 64BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 100ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-FBGA (13x11)
封裝: 64-LBGA
庫存3,968
FLASH
FLASH - NOR
256Mb (16M x 16)
Parallel
-
60ns
100ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
64-LBGA
64-FBGA (13x11)
IS61NLF51236-6.5B3I-TR
ISSI, Integrated Silicon Solution Inc

IC SRAM 18M PARALLEL 165TFBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 18Mb (512K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 6.5ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-TFBGA (13x15)
封裝: 165-TBGA
庫存6,512
SRAM
SRAM - Synchronous
18Mb (512K x 36)
Parallel
133MHz
-
6.5ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
165-TBGA
165-TFBGA (13x15)
W631GG6KB-11
Winbond Electronics

IC DRAM 1G PARALLEL 96WBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 1Gb (64M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 933MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 20ns
  • Voltage - Supply: 1.425V ~ 1.575V
  • Operating Temperature: 0°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-WBGA (9x13)
封裝: 96-TFBGA
庫存3,216
DRAM
SDRAM - DDR3
1Gb (64M x 16)
Parallel
933MHz
-
20ns
1.425V ~ 1.575V
0°C ~ 85°C (TC)
Surface Mount
96-TFBGA
96-WBGA (9x13)
UPD44325362BF5-E50-FQ1-A
Renesas Electronics Corporation

QDR SRAM, 1MX36, 0.45NS

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
AS4C256M16D4A-75BCN
Alliance Memory, Inc.

IC DRAM 4GBIT POD 96FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 4Gbit
  • Memory Interface: POD
  • Clock Frequency: 1.333 GHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 18 ns
  • Voltage - Supply: 1.14V ~ 1.26V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-FBGA (7.5x13)
封裝: -
庫存2,880
DRAM
SDRAM - DDR4
4Gbit
POD
1.333 GHz
15ns
18 ns
1.14V ~ 1.26V
0°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-FBGA (7.5x13)
MT53E1G16D1ZW-046-AUT-C
Micron Technology Inc.

LPDDR4 16GBIT 16 200/264 TFBGA 1

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4X
  • Memory Size: 16Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 2.133 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-TFBGA
  • Supplier Device Package: 200-TFBGA (10x14.5)
封裝: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4X
16Gbit
Parallel
2.133 GHz
18ns
3.5 ns
1.06V ~ 1.17V
-40°C ~ 105°C (TC)
Surface Mount
200-TFBGA
200-TFBGA (10x14.5)
S71VS128RB0AHK4L3
Infineon Technologies

IC FLSH RAM 128MBIT PAR 56VFRBGA

  • Memory Type: Non-Volatile, Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH, PSRAM
  • Memory Size: 128Mbit (FLASH), 32Mbit (RAM)
  • Memory Interface: Parallel
  • Clock Frequency: 108 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -25°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 56-VFBGA
  • Supplier Device Package: 56-VFRBGA (7.7x6.2)
封裝: -
Request a Quote
FLASH, RAM
FLASH, PSRAM
128Mbit (FLASH), 32Mbit (RAM)
Parallel
108 MHz
-
-
1.7V ~ 1.95V
-25°C ~ 85°C (TA)
Surface Mount
56-VFBGA
56-VFRBGA (7.7x6.2)
FEMC008GTTG7-T13-17
Flexxon Pte Ltd

IC FLASH 64GBIT EMMC 153FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (pSLC)
  • Memory Size: 64Gbit
  • Memory Interface: eMMC
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -25°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 153-VFBGA
  • Supplier Device Package: 153-FBGA (11.5x13)
封裝: -
庫存231
FLASH
FLASH - NAND (pSLC)
64Gbit
eMMC
200 MHz
-
-
2.7V ~ 3.6V
-25°C ~ 85°C
Surface Mount
153-VFBGA
153-FBGA (11.5x13)
MT62F1G64D4CZ-023-FAAT-C
Micron Technology Inc.

LPDDR5 64GBIT 64 561/570 TFBGA 4

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
EM63B165TS-5ISG
Etron Technology, Inc.

IC DRAM 512MBIT PAR 54TSOP II

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 512Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 4.5 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
封裝: -
Request a Quote
DRAM
SDRAM
512Mbit
Parallel
200 MHz
10ns
4.5 ns
3V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
MT53E1G64D4HJ-046-AIT-A
Micron Technology Inc.

LPDDR4 64G 1GX64 FBGA QDP

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
W66CM2NQUAGJ-TR
Winbond Electronics

IC DRAM 4GBIT LVSTL 11 200WFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4X
  • Memory Size: 4Gbit
  • Memory Interface: LVSTL_11
  • Clock Frequency: 1.866 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-WFBGA
  • Supplier Device Package: 200-WFBGA (10x14.5)
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DRAM
SDRAM - Mobile LPDDR4X
4Gbit
LVSTL_11
1.866 GHz
18ns
3.5 ns
1.06V ~ 1.17V, 1.7V ~ 1.95V
-40°C ~ 105°C (TC)
Surface Mount
200-WFBGA
200-WFBGA (10x14.5)