頁 797 - 記憶體 | 積體電路 (IC)

零件編號	製造商	描述	封裝	庫存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
CY7C1069AV33-1XW14	Cypress Semiconductor Corp	IC SRAM 16GBIT 56TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Mb (2M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	封裝: 54-TSOP (0.400", 10.16mm Width)	庫存2,496	SRAM	SRAM - Asynchronous	16Mb (2M x 8)	Parallel	-	-	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
MX25R6435FM1IL0	Macronix	IC FLASH 64MBIT 80MHZ 8SOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8) Memory Interface: SPI Clock Frequency: 33MHz Write Cycle Time - Word, Page: 100µs, 10ms Access Time: - Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存7,472	FLASH	FLASH - NOR	64Mb (8M x 8)	SPI	33MHz	100µs, 10ms	-	1.65 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
MTFC16GKQDI-IT	Micron Technology Inc.	IC FLASH 128GBIT 169TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 128Gb (16G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: - Supplier Device Package: -	封裝: -	庫存6,112	FLASH	FLASH - NAND	128Gb (16G x 8)	MMC	-	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	-	-
CY7C11681KV18-400BZC	Cypress Semiconductor Corp	IC SRAM 18MBIT 400MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, DDR II+ Memory Size: 18Mb (1M x 18) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	封裝: 165-LBGA	庫存5,216	SRAM	SRAM - Synchronous, DDR II+	18Mb (1M x 18)	Parallel	400MHz	-	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
CY7C1382S-167AXC	Cypress Semiconductor Corp	IC SRAM 18MBIT 167MHZ 100LQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mb (1M x 18) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: 3.4ns Voltage - Supply: 3.135 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	封裝: 100-LQFP	庫存5,248	SRAM	SRAM - Synchronous	18Mb (1M x 18)	Parallel	167MHz	-	3.4ns	3.135 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
STK12C68-C45I	Cypress Semiconductor Corp	IC NVSRAM 64KBIT 45NS 28CDIP Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 64Kb (8K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 28-CDIP (0.300", 7.62mm) Supplier Device Package: 28-CDIP	封裝: 28-CDIP (0.300", 7.62mm)	庫存4,496	NVSRAM	NVSRAM (Non-Volatile SRAM)	64Kb (8K x 8)	Parallel	-	45ns	45ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Through Hole	28-CDIP (0.300", 7.62mm)	28-CDIP
CY7C1313BV18-167BZCT	Cypress Semiconductor Corp	IC SRAM 18MBIT 167MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II Memory Size: 18Mb (1M x 18) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	封裝: 165-LBGA	庫存5,632	SRAM	SRAM - Synchronous, QDR II	18Mb (1M x 18)	Parallel	167MHz	-	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
IS42S32400B-7BL	ISSI, Integrated Silicon Solution Inc	IC SDRAM 128MBIT 143MHZ 90FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mb (4M x 32) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	封裝: 90-TFBGA	庫存22,344	DRAM	SDRAM	128Mb (4M x 32)	Parallel	143MHz	-	5.4ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
AT24C512N-10SI-1.8	Microchip Technology	IC EEPROM 512KBIT 400KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 512Kb (64K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 10ms Access Time: 900ns Voltage - Supply: 1.8 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存5,600	EEPROM	EEPROM	512Kb (64K x 8)	I2C	400kHz	10ms	900ns	1.8 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
AT24C64W-10SC-1.8	Microchip Technology	IC EEPROM 64KBIT 400KHZ 8SO Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kb (8K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 10ms Access Time: 900ns Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.209", 5.30mm Width)	庫存7,440	EEPROM	EEPROM	64Kb (8K x 8)	I2C	400kHz	10ms	900ns	1.8 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
AT28HC256-12JI	Microchip Technology	IC EEPROM 256KBIT 120NS 32PLCC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ms Access Time: 120ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	封裝: 32-LCC (J-Lead)	庫存7,692	EEPROM	EEPROM	256Kb (32K x 8)	Parallel	-	10ms	120ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	32-LCC (J-Lead)	32-PLCC
AT24C01-10PI	Microchip Technology	IC EEPROM 1KBIT 400KHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 10ms Access Time: 900ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	封裝: 8-DIP (0.300", 7.62mm)	庫存6,304	EEPROM	EEPROM	1Kb (128 x 8)	I2C	400kHz	10ms	900ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
S70FL01GSAGBHBC10	Cypress Semiconductor Corp	NOR Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Gb (128M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存5,696	FLASH	FLASH - NOR	1Gb (128M x 8)	SPI - Quad I/O	133MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	-	-	-
SST38VF6401-90-5C-B3KE	Microchip Technology	IC FLASH 64MBIT 90NS 48TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 64Mb (4M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10µs Access Time: 90ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-TFBGA	封裝: 48-TFBGA	庫存6,288	FLASH	FLASH	64Mb (4M x 16)	Parallel	-	10µs	90ns	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	48-TFBGA	48-TFBGA
CY62128EV30LL-55SXET	Cypress Semiconductor Corp	IC SRAM 1MBIT 55NS 32SOIC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 2.2 V ~ 3.6 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 32-SOIC (0.445", 11.30mm Width) Supplier Device Package: 32-SOIC	封裝: 32-SOIC (0.445", 11.30mm Width)	庫存2,416	SRAM	SRAM - Asynchronous	1Mb (128K x 8)	Parallel	-	55ns	55ns	2.2 V ~ 3.6 V	-40°C ~ 125°C (TA)	Surface Mount	32-SOIC (0.445", 11.30mm Width)	32-SOIC
11LC010-E/P	Microchip Technology	IC EEPROM 1KBIT 100KHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8) Memory Interface: Single Wire Clock Frequency: 100kHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	封裝: 8-DIP (0.300", 7.62mm)	庫存5,232	EEPROM	EEPROM	1Kb (128 x 8)	Single Wire	100kHz	5ms	-	2.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
BR24G02NUX-3ATTR	Rohm Semiconductor	IC EEPROM 2KBIT 1MHZ 8VSON Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.6 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: VSON008X2030	封裝: 8-UFDFN Exposed Pad	庫存5,456	EEPROM	EEPROM	2Kb (256 x 8)	I2C	1MHz	5ms	-	1.6 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-UFDFN Exposed Pad	VSON008X2030
S25FS128SDSBHM203	Cypress Semiconductor Corp	IC NOR Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-BGA (8x6)	封裝: 24-TBGA	庫存4,128	-	-	-	-	-	-	-	-	-	Surface Mount	24-TBGA	24-BGA (8x6)
MSP14LV320-E1-TH-001	Cypress Semiconductor Corp	IC MEMORY FLASH NOR Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存6,752	-	-	-	-	-	-	-	-	-	-	-	-
MT29F2G16ABAEAWP-AIT:E	Micron Technology Inc.	IC FLASH 2G PARALLEL TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP	封裝: 48-TFSOP (0.724", 18.40mm Width)	庫存17,664	FLASH	FLASH - NAND	2Gb (128M x 16)	Parallel	-	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP
IS41C16100D-50KLI	ISSI, Integrated Silicon Solution Inc	IC DRAM 16M PARALLEL 42SOJ Memory Type: Volatile Memory Format: DRAM Technology: DRAM - EDO Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 84ns Access Time: 25ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 42-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 42-SOJ	封裝: 42-BSOJ (0.400", 10.16mm Width)	庫存6,112	DRAM	DRAM - EDO	16Mb (1M x 16)	Parallel	-	84ns	25ns	4.5V ~ 5.5V	-40°C ~ 85°C (TA)	Surface Mount	42-BSOJ (0.400", 10.16mm Width)	42-SOJ
UPD44164185BF5-E33Y-EQ3-A	Renesas Electronics Corporation	DDR SRAM, 1MX18, 0.45NS Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
N08L6182AB7I	onsemi	Standard SRAM, 512KX16, 85ns, CM Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 8Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 85 ns Voltage - Supply: 1.65V ~ 2.2V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-LFBGA Supplier Device Package: 48-BGA (6x8)	封裝: -	Request a Quote	SRAM	SRAM - Asynchronous	8Mbit	Parallel	-	70ns	85 ns	1.65V ~ 2.2V	-40°C ~ 85°C (TA)	Surface Mount	48-LFBGA	48-BGA (6x8)
MT29F1T08EELKEJ4-M-K-TR	Micron Technology Inc.	TLC 1T 128GX8 VBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT53D384M32D2DS-046-AAT-E	Micron Technology Inc.	IC DRAM 12GBIT 2.133GHZ 200WFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 12Gbit Memory Interface: - Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 200-WFBGA Supplier Device Package: 200-WFBGA (10x14.5)	封裝: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4	12Gbit	-	2.133 GHz	-	-	1.1V	-40°C ~ 105°C (TC)	Surface Mount	200-WFBGA	200-WFBGA (10x14.5)
MTFC128GASAONS-IT-TR	Micron Technology Inc.	USSD 1T Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
IS61WV20488FBLL-10T2LI-TR	ISSI, Integrated Silicon Solution Inc	16Mb,High-Speed,Async,2Mbx8,10ns Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10 ns Voltage - Supply: 2.4V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	封裝: -	Request a Quote	SRAM	SRAM - Asynchronous	16Mbit	Parallel	-	10ns	10 ns	2.4V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
NDL26PFG-9MET-TR	Insignis Technology Corporation	IC DRAM 2GBIT PAR 96FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 2Gbit Memory Interface: Parallel Clock Frequency: 933 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (9x13)	封裝: -	Request a Quote	DRAM	SDRAM - DDR3L	2Gbit	Parallel	933 MHz	15ns	20 ns	1.283V ~ 1.45V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (9x13)

CY7C1069AV33-1XW14

Cypress Semiconductor Corp

IC SRAM 16GBIT 56TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (2M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

封裝: 54-TSOP (0.400", 10.16mm Width)

庫存2,496

SRAM

SRAM - Asynchronous

16Mb (2M x 8)

Parallel

-

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

MX25R6435FM1IL0

Macronix

IC FLASH 64MBIT 80MHZ 8SOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8)
Memory Interface: SPI
Clock Frequency: 33MHz
Write Cycle Time - Word, Page: 100µs, 10ms
Access Time: -
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存7,472

FLASH

FLASH - NOR

64Mb (8M x 8)

SPI

33MHz

100µs, 10ms

-

1.65 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

MTFC16GKQDI-IT

Micron Technology Inc.

IC FLASH 128GBIT 169TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: -

封裝: -

庫存6,112

FLASH

FLASH - NAND

128Gb (16G x 8)

MMC

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

-

CY7C11681KV18-400BZC

Cypress Semiconductor Corp

IC SRAM 18MBIT 400MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, DDR II+
Memory Size: 18Mb (1M x 18)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

封裝: 165-LBGA

庫存5,216

SRAM

SRAM - Synchronous, DDR II+

18Mb (1M x 18)

Parallel

400MHz

-

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

CY7C1382S-167AXC

Cypress Semiconductor Corp

IC SRAM 18MBIT 167MHZ 100LQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (1M x 18)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: 3.4ns
Voltage - Supply: 3.135 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

封裝: 100-LQFP

庫存5,248

SRAM

SRAM - Synchronous

18Mb (1M x 18)

Parallel

167MHz

-

3.4ns

3.135 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

STK12C68-C45I

Cypress Semiconductor Corp

IC NVSRAM 64KBIT 45NS 28CDIP

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 64Kb (8K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 28-CDIP (0.300", 7.62mm)
Supplier Device Package: 28-CDIP

封裝: 28-CDIP (0.300", 7.62mm)

庫存4,496

NVSRAM

NVSRAM (Non-Volatile SRAM)

64Kb (8K x 8)

Parallel

-

45ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Through Hole

28-CDIP (0.300", 7.62mm)

28-CDIP

CY7C1313BV18-167BZCT

Cypress Semiconductor Corp

IC SRAM 18MBIT 167MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 18Mb (1M x 18)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

封裝: 165-LBGA

庫存5,632

SRAM

SRAM - Synchronous, QDR II

18Mb (1M x 18)

Parallel

167MHz

-

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

IS42S32400B-7BL

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 143MHZ 90FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (4M x 32)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

封裝: 90-TFBGA

庫存22,344

DRAM

SDRAM

128Mb (4M x 32)

Parallel

143MHz

-

5.4ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

AT24C512N-10SI-1.8

Microchip Technology

IC EEPROM 512KBIT 400KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 512Kb (64K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 10ms
Access Time: 900ns
Voltage - Supply: 1.8 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存5,600

EEPROM

512Kb (64K x 8)

I2C

400kHz

10ms

900ns

1.8 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

AT24C64W-10SC-1.8

Microchip Technology

IC EEPROM 64KBIT 400KHZ 8SO

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kb (8K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 10ms
Access Time: 900ns
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.209", 5.30mm Width)

庫存7,440

EEPROM

64Kb (8K x 8)

I2C

400kHz

10ms

900ns

1.8 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

AT28HC256-12JI

Microchip Technology

IC EEPROM 256KBIT 120NS 32PLCC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ms
Access Time: 120ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

封裝: 32-LCC (J-Lead)

庫存7,692

EEPROM

256Kb (32K x 8)

Parallel

-

10ms

120ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

32-LCC (J-Lead)

32-PLCC

AT24C01-10PI

Microchip Technology

IC EEPROM 1KBIT 400KHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 10ms
Access Time: 900ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

封裝: 8-DIP (0.300", 7.62mm)

庫存6,304

EEPROM

1Kb (128 x 8)

I2C

400kHz

10ms

900ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

S70FL01GSAGBHBC10

Cypress Semiconductor Corp

NOR

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gb (128M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存5,696

FLASH

FLASH - NOR

1Gb (128M x 8)

SPI - Quad I/O

133MHz

-

2.7 V ~ 3.6 V

-40°C ~ 105°C (TA)

-

SST38VF6401-90-5C-B3KE

Microchip Technology

IC FLASH 64MBIT 90NS 48TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 64Mb (4M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10µs
Access Time: 90ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA

封裝: 48-TFBGA

庫存6,288

FLASH

64Mb (4M x 16)

Parallel

-

10µs

90ns

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

48-TFBGA

CY62128EV30LL-55SXET

Cypress Semiconductor Corp

IC SRAM 1MBIT 55NS 32SOIC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 2.2 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Supplier Device Package: 32-SOIC

封裝: 32-SOIC (0.445", 11.30mm Width)

庫存2,416

SRAM

SRAM - Asynchronous

1Mb (128K x 8)

Parallel

-

55ns

2.2 V ~ 3.6 V

-40°C ~ 125°C (TA)

Surface Mount

32-SOIC (0.445", 11.30mm Width)

32-SOIC

11LC010-E/P

Microchip Technology

IC EEPROM 1KBIT 100KHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Memory Interface: Single Wire
Clock Frequency: 100kHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

封裝: 8-DIP (0.300", 7.62mm)

庫存5,232

EEPROM

1Kb (128 x 8)

Single Wire

100kHz

5ms

-

2.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

BR24G02NUX-3ATTR

Rohm Semiconductor

IC EEPROM 2KBIT 1MHZ 8VSON

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.6 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: VSON008X2030

封裝: 8-UFDFN Exposed Pad

庫存5,456

EEPROM

2Kb (256 x 8)

I2C

1MHz

5ms

-

1.6 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-UFDFN Exposed Pad

VSON008X2030

S25FS128SDSBHM203

Cypress Semiconductor Corp

IC NOR

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-BGA (8x6)

封裝: 24-TBGA

庫存4,128

-

Surface Mount

24-TBGA

24-BGA (8x6)

MSP14LV320-E1-TH-001

Cypress Semiconductor Corp

IC MEMORY FLASH NOR

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存6,752

-

MT29F2G16ABAEAWP-AIT:E

Micron Technology Inc.

IC FLASH 2G PARALLEL TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP

封裝: 48-TFSOP (0.724", 18.40mm Width)

庫存17,664

FLASH

FLASH - NAND

2Gb (128M x 16)

Parallel

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP

IS41C16100D-50KLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 16M PARALLEL 42SOJ

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM - EDO
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 84ns
Access Time: 25ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 42-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 42-SOJ

封裝: 42-BSOJ (0.400", 10.16mm Width)

庫存6,112

DRAM

DRAM - EDO

16Mb (1M x 16)

Parallel

-

84ns

25ns

4.5V ~ 5.5V

-40°C ~ 85°C (TA)

Surface Mount

42-BSOJ (0.400", 10.16mm Width)

42-SOJ

UPD44164185BF5-E33Y-EQ3-A

Renesas Electronics Corporation

DDR SRAM, 1MX18, 0.45NS

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

N08L6182AB7I

onsemi

Standard SRAM, 512KX16, 85ns, CM

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 8Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 85 ns
Voltage - Supply: 1.65V ~ 2.2V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-LFBGA
Supplier Device Package: 48-BGA (6x8)

封裝: -

Request a Quote

SRAM

SRAM - Asynchronous

8Mbit

Parallel

-

70ns

85 ns

1.65V ~ 2.2V

-40°C ~ 85°C (TA)

Surface Mount

48-LFBGA

48-BGA (6x8)

MT29F1T08EELKEJ4-M-K-TR

Micron Technology Inc.

TLC 1T 128GX8 VBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

MT53D384M32D2DS-046-AAT-E

Micron Technology Inc.

IC DRAM 12GBIT 2.133GHZ 200WFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 12Gbit
Memory Interface: -
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-WFBGA
Supplier Device Package: 200-WFBGA (10x14.5)

封裝: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR4

12Gbit

-

2.133 GHz

-

1.1V

-40°C ~ 105°C (TC)

Surface Mount

200-WFBGA

200-WFBGA (10x14.5)

MTFC128GASAONS-IT-TR

Micron Technology Inc.

USSD 1T

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

IS61WV20488FBLL-10T2LI-TR

ISSI, Integrated Silicon Solution Inc

16Mb,High-Speed,Async,2Mbx8,10ns

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10 ns
Voltage - Supply: 2.4V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

封裝: -

Request a Quote

SRAM

SRAM - Asynchronous

16Mbit

Parallel

-

10ns

10 ns

2.4V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

NDL26PFG-9MET-TR

Insignis Technology Corporation

IC DRAM 2GBIT PAR 96FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 2Gbit
Memory Interface: Parallel
Clock Frequency: 933 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (9x13)

封裝: -

Request a Quote

DRAM

SDRAM - DDR3L

2Gbit

Parallel

933 MHz

15ns

20 ns

1.283V ~ 1.45V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (9x13)