頁 742 - 記憶體 | 積體電路 (IC)

零件編號	製造商	描述	封裝	庫存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AK93C55BH	AKM Semiconductor Inc.	IC EEPROM 2KBIT 8MSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (128 x 16) Memory Interface: SPI Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: - Supplier Device Package: 8-MSOP	封裝: -	庫存2,656	EEPROM	EEPROM	2Kb (128 x 16)	SPI	-	-	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	-	8-MSOP
MT29C2G24MAAAAHAKC-5 IT	Micron Technology Inc.	IC FLASH/LPDRAM 3GBIT Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存5,824	-	-	-	-	-	-	-	-	-	-	-	-
M58LT128KSB7ZA6F TR	Micron Technology Inc.	IC FLASH 128MBIT 70NS 64TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 52MHz Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-TBGA Supplier Device Package: 64-TBGA (10x13)	封裝: 64-TBGA	庫存7,712	FLASH	FLASH - NOR	128Mb (8M x 16)	Parallel	52MHz	70ns	70ns	1.7 V ~ 2 V	-40°C ~ 85°C (TA)	Surface Mount	64-TBGA	64-TBGA (10x13)
MT29C4G96MAYAMCMJ-5 IT	Micron Technology Inc.	IC FLASH/LPDRAM 8GBIT 200MHZ BGA Memory Type: Non-Volatile Memory Format: FLASH, RAM Technology: FLASH - NAND, Mobile LPDRAM Memory Size: 4Gb (512M x 8)(NAND), 4Gb (256M x 16)(LPDRAM) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: - Supplier Device Package: -	封裝: -	庫存7,392	FLASH, RAM	FLASH - NAND, Mobile LPDRAM	4Gb (512M x 8)(NAND), 4Gb (256M x 16)(LPDRAM)	Parallel	200MHz	-	-	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	-	-
CAT24C02ZI-GT3A	ON Semiconductor	IC EEPROM 2KBIT 400KHZ 8MSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	封裝: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	庫存6,624	EEPROM	EEPROM	2Kb (256 x 8)	I2C	400kHz	5ms	900ns	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
W25X40BVSSIG	Winbond Electronics	IC FLASH 4MBIT 104MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 4Mb (512K x 8) Memory Interface: SPI Clock Frequency: 104MHz Write Cycle Time - Word, Page: 3ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.209", 5.30mm Width)	庫存226,236	FLASH	FLASH	4Mb (512K x 8)	SPI	104MHz	3ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
CY7C1414JV18-267BZC	Cypress Semiconductor Corp	IC SRAM 36MBIT 267MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II Memory Size: 36Mb (1M x 36) Memory Interface: Parallel Clock Frequency: 267MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (15x17)	封裝: 165-LBGA	庫存3,312	SRAM	SRAM - Synchronous, QDR II	36Mb (1M x 36)	Parallel	267MHz	-	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (15x17)
MT29F2G08AADWP:D TR	Micron Technology Inc.	IC FLASH 2GBIT 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	封裝: 48-TFSOP (0.724", 18.40mm Width)	庫存3,392	FLASH	FLASH - NAND	2Gb (256M x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
70V9099L9PFI	IDT, Integrated Device Technology Inc	IC SRAM 1MBIT 9NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 9ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封裝: 100-LQFP	庫存6,352	SRAM	SRAM - Dual Port, Synchronous	1Mb (128K x 8)	Parallel	-	-	9ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
7027S25PF8	IDT, Integrated Device Technology Inc	IC SRAM 512KBIT 25NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 512Kb (32K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封裝: 100-LQFP	庫存5,824	SRAM	SRAM - Dual Port, Asynchronous	512Kb (32K x 16)	Parallel	-	25ns	25ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
IS62WV102416ALL-35MLI	ISSI, Integrated Silicon Solution Inc	IC SRAM 16MBIT 35NS 48MINIBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 1.65 V ~ 2.2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-miniBGA (9x11)	封裝: 48-TFBGA	庫存3,040	SRAM	SRAM - Asynchronous	16Mb (1M x 16)	Parallel	-	35ns	35ns	1.65 V ~ 2.2 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFBGA	48-miniBGA (9x11)
IS43LR32640A-6BLI-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 2GBIT 166MHZ 90BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 2Gb (64M x 32) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 15ns Access Time: 5ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-LFBGA Supplier Device Package: 90-WBGA (8x13)	封裝: 90-LFBGA	庫存4,096	DRAM	SDRAM - DDR	2Gb (64M x 32)	Parallel	166MHz	15ns	5ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	90-LFBGA	90-WBGA (8x13)
M25PE10-VMN6P	Micron Technology Inc.	IC FLASH 1MBIT 75MHZ 8SO Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Mb (128K x 8) Memory Interface: SPI Clock Frequency: 75MHz Write Cycle Time - Word, Page: 15ms, 3ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存5,888	FLASH	FLASH - NOR	1Mb (128K x 8)	SPI	75MHz	15ms, 3ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
CY7C1041GE-10VXI	Cypress Semiconductor Corp	IC SRAM 4MBIT 10NS 44SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 44-SOJ	封裝: 44-BSOJ (0.400", 10.16mm Width)	庫存5,600	SRAM	SRAM - Asynchronous	4Mb (256K x 16)	Parallel	-	10ns	10ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	44-BSOJ (0.400", 10.16mm Width)	44-SOJ
M48Z32V-35MT1F	STMicroelectronics	IC NVSRAM 256KBIT 35NS 44SOH Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 44-BSOP (0.337", 8.56mm Width) Supplier Device Package: 44-SO	封裝: 44-BSOP (0.337", 8.56mm Width)	庫存6,096	NVSRAM	NVSRAM (Non-Volatile SRAM)	256Kb (32K x 8)	Parallel	-	35ns	35ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	44-BSOP (0.337", 8.56mm Width)	44-SO
93C46A/S15K	Microchip Technology	IC EEPROM 1K SPI 2MHZ WAFER Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 2ms Access Time: - Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封裝: Die	庫存4,800	EEPROM	EEPROM	1Kb (128 x 8)	SPI	2MHz	2ms	-	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	Die	Die
S29WS064RABBHI000	Cypress Semiconductor Corp	IC FLASH 64M PARALLEL 84FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (4M x 16) Memory Interface: Parallel Clock Frequency: 108MHz Write Cycle Time - Word, Page: 60ns Access Time: 80ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 84-VFBGA Supplier Device Package: 84-FBGA (11.6x8)	封裝: 84-VFBGA	庫存2,352	FLASH	FLASH - NOR	64Mb (4M x 16)	Parallel	108MHz	60ns	80ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	84-VFBGA	84-FBGA (11.6x8)
AS4C128M16MD2A-25BCNTR	Alliance Memory, Inc.	IC DRAM 2G PARALLEL 134FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 134-VFBGA Supplier Device Package: 134-FBGA (10x11.5)	封裝: 134-VFBGA	庫存7,056	DRAM	SDRAM - Mobile LPDDR2	2Gb (128M x 16)	Parallel	400MHz	15ns	-	1.14 V ~ 1.95 V	-30°C ~ 85°C (TC)	Surface Mount	134-VFBGA	134-FBGA (10x11.5)
MT53D256M16D1NY-046 XT ES:B	Micron Technology Inc.	IC DRAM 16G 2133MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 16Gb (256M x 64) Memory Interface: - Clock Frequency: 2133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 105°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存3,680	DRAM	SDRAM - Mobile LPDDR4	16Gb (256M x 64)	-	2133MHz	-	-	1.1V	-30°C ~ 105°C (TC)	-	-	-
CG7816AAT	Cypress Semiconductor Corp	IC SRAM ASYNC 44TSOP II Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存2,368	-	-	-	-	-	-	-	-	-	-	-	-
AT24C04C-XPD-T	Microchip Technology	400KHZ AUTO TEMP 8-TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (512 x 8) Memory Interface: I²C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封裝: 8-TSSOP (0.173", 4.40mm Width)	庫存5,568	EEPROM	EEPROM	4Kb (512 x 8)	I²C	400kHz	5ms	900ns	2.5V ~ 5.5V	-40°C ~ 125°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
AT24C01C-STPD-TVAO	Microchip Technology	1KB I2C EEPROM AUTO GRADE 1 Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8) Memory Interface: I²C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: SOT-23-5 Thin, TSOT-23-5 Supplier Device Package: TSOT-23-5	封裝: SOT-23-5 Thin, TSOT-23-5	庫存3,584	EEPROM	EEPROM	1Kb (128 x 8)	I²C	1MHz	5ms	900ns	2.5V ~ 5.5V	-40°C ~ 125°C (TA)	Surface Mount	SOT-23-5 Thin, TSOT-23-5	TSOT-23-5
MT58L128L32F1T-6-8	Micron Technology Inc.	IC SRAM 4MBIT PARALLEL 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4Mbit Memory Interface: Parallel Clock Frequency: 133 MHz Write Cycle Time - Word, Page: - Access Time: 6.8 ns Voltage - Supply: 3.135V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20.1)	封裝: -	Request a Quote	SRAM	SRAM - Synchronous	4Mbit	Parallel	133 MHz	-	6.8 ns	3.135V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20.1)
SM662GXC-BESS	Silicon Motion, Inc.	IC FLASH 160GBIT EMMC 100BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 160Gbit Memory Interface: eMMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -25°C ~ 85°C Mounting Type: Surface Mount Package / Case: 100-LBGA Supplier Device Package: 100-BGA (14x18)	封裝: -	Request a Quote	FLASH	FLASH - NAND (SLC)	160Gbit	eMMC	-	-	-	-	-25°C ~ 85°C	Surface Mount	100-LBGA	100-BGA (14x18)
M30042040054X0PSAR	Renesas Electronics Corporation	IC RAM 4MBIT 54MHZ 8SOIC Memory Type: Non-Volatile Memory Format: RAM Technology: MRAM (Magnetoresistive RAM) Memory Size: 4Mbit Memory Interface: - Clock Frequency: 54 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	封裝: -	Request a Quote	RAM	MRAM (Magnetoresistive RAM)	4Mbit	-	54 MHz	-	-	2.7V ~ 3.6V	-40°C ~ 105°C	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
GS8662QT37BGD-333I	GSI Technology Inc.	IC SRAM 72MBIT PARALLEL 165FPBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Quad Port, Synchronous Memory Size: 72Mbit Memory Interface: Parallel Clock Frequency: 333 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: -40°C ~ 100°C (TJ) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FPBGA (15x13)	封裝: -	Request a Quote	SRAM	SRAM - Quad Port, Synchronous	72Mbit	Parallel	333 MHz	-	-	1.7V ~ 1.9V	-40°C ~ 100°C (TJ)	Surface Mount	165-LBGA	165-FPBGA (15x13)
CY6146CV30LL-70BAIT	Cypress Semiconductor Corp	ASYNC RAM Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
IS43LD32128C-18BLI	ISSI, Integrated Silicon Solution Inc	4G, 1.2/1.8V, LPDDR2, 128MX32, 5 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 4Gbit Memory Interface: HSUL_12 Clock Frequency: 533 MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.5 ns Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 134-TFBGA Supplier Device Package: 134-TFBGA (10x11.5)	封裝: -	庫存300	DRAM	SDRAM - Mobile LPDDR2-S4	4Gbit	HSUL_12	533 MHz	15ns	5.5 ns	1.14V ~ 1.3V, 1.7V ~ 1.95V	-40°C ~ 85°C (TC)	Surface Mount	134-TFBGA	134-TFBGA (10x11.5)

AK93C55BH

AKM Semiconductor Inc.

IC EEPROM 2KBIT 8MSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (128 x 16)
Memory Interface: SPI
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: 8-MSOP

封裝: -

庫存2,656

EEPROM

2Kb (128 x 16)

SPI

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

-

8-MSOP

MT29C2G24MAAAAHAKC-5 IT

Micron Technology Inc.

IC FLASH/LPDRAM 3GBIT

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存5,824

-

M58LT128KSB7ZA6F TR

Micron Technology Inc.

IC FLASH 128MBIT 70NS 64TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 52MHz
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-TBGA
Supplier Device Package: 64-TBGA (10x13)

封裝: 64-TBGA

庫存7,712

FLASH

FLASH - NOR

128Mb (8M x 16)

Parallel

52MHz

70ns

1.7 V ~ 2 V

-40°C ~ 85°C (TA)

Surface Mount

64-TBGA

64-TBGA (10x13)

MT29C4G96MAYAMCMJ-5 IT

Micron Technology Inc.

IC FLASH/LPDRAM 8GBIT 200MHZ BGA

Memory Type: Non-Volatile
Memory Format: FLASH, RAM
Technology: FLASH - NAND, Mobile LPDRAM
Memory Size: 4Gb (512M x 8)(NAND), 4Gb (256M x 16)(LPDRAM)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: -

封裝: -

庫存7,392

FLASH, RAM

FLASH - NAND, Mobile LPDRAM

4Gb (512M x 8)(NAND), 4Gb (256M x 16)(LPDRAM)

Parallel

200MHz

-

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

-

CAT24C02ZI-GT3A

ON Semiconductor

IC EEPROM 2KBIT 400KHZ 8MSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

封裝: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

庫存6,624

EEPROM

2Kb (256 x 8)

I2C

400kHz

5ms

900ns

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-MSOP

W25X40BVSSIG

Winbond Electronics

IC FLASH 4MBIT 104MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (512K x 8)
Memory Interface: SPI
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 3ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.209", 5.30mm Width)

庫存226,236

FLASH

4Mb (512K x 8)

SPI

104MHz

3ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

CY7C1414JV18-267BZC

Cypress Semiconductor Corp

IC SRAM 36MBIT 267MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 36Mb (1M x 36)
Memory Interface: Parallel
Clock Frequency: 267MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (15x17)

封裝: 165-LBGA

庫存3,312

SRAM

SRAM - Synchronous, QDR II

36Mb (1M x 36)

Parallel

267MHz

-

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (15x17)

MT29F2G08AADWP:D TR

Micron Technology Inc.

IC FLASH 2GBIT 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Gb (256M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

封裝: 48-TFSOP (0.724", 18.40mm Width)

庫存3,392

FLASH

FLASH - NAND

2Gb (256M x 8)

Parallel

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I

70V9099L9PFI

IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 9NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 9ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封裝: 100-LQFP

庫存6,352

SRAM

SRAM - Dual Port, Synchronous

1Mb (128K x 8)

Parallel

-

9ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

7027S25PF8

IDT, Integrated Device Technology Inc

IC SRAM 512KBIT 25NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 512Kb (32K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封裝: 100-LQFP

庫存5,824

SRAM

SRAM - Dual Port, Asynchronous

512Kb (32K x 16)

Parallel

-

25ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

IS62WV102416ALL-35MLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 16MBIT 35NS 48MINIBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 1.65 V ~ 2.2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-miniBGA (9x11)

封裝: 48-TFBGA

庫存3,040

SRAM

SRAM - Asynchronous

16Mb (1M x 16)

Parallel

-

35ns

1.65 V ~ 2.2 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFBGA

48-miniBGA (9x11)

IS43LR32640A-6BLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 2GBIT 166MHZ 90BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 2Gb (64M x 32)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-LFBGA
Supplier Device Package: 90-WBGA (8x13)

封裝: 90-LFBGA

庫存4,096

DRAM

SDRAM - DDR

2Gb (64M x 32)

Parallel

166MHz

15ns

5ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

90-LFBGA

90-WBGA (8x13)

M25PE10-VMN6P

Micron Technology Inc.

IC FLASH 1MBIT 75MHZ 8SO

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Mb (128K x 8)
Memory Interface: SPI
Clock Frequency: 75MHz
Write Cycle Time - Word, Page: 15ms, 3ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存5,888

FLASH

FLASH - NOR

1Mb (128K x 8)

SPI

75MHz

15ms, 3ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

CY7C1041GE-10VXI

Cypress Semiconductor Corp

IC SRAM 4MBIT 10NS 44SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 44-SOJ

封裝: 44-BSOJ (0.400", 10.16mm Width)

庫存5,600

SRAM

SRAM - Asynchronous

4Mb (256K x 16)

Parallel

-

10ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

44-BSOJ (0.400", 10.16mm Width)

44-SOJ

M48Z32V-35MT1F

STMicroelectronics

IC NVSRAM 256KBIT 35NS 44SOH

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-BSOP (0.337", 8.56mm Width)
Supplier Device Package: 44-SO

封裝: 44-BSOP (0.337", 8.56mm Width)

庫存6,096

NVSRAM

NVSRAM (Non-Volatile SRAM)

256Kb (32K x 8)

Parallel

-

35ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

44-BSOP (0.337", 8.56mm Width)

44-SO

93C46A/S15K

Microchip Technology

IC EEPROM 1K SPI 2MHZ WAFER

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 2ms
Access Time: -
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封裝: Die

庫存4,800

EEPROM

1Kb (128 x 8)

SPI

2MHz

2ms

-

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

Die

S29WS064RABBHI000

Cypress Semiconductor Corp

IC FLASH 64M PARALLEL 84FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (4M x 16)
Memory Interface: Parallel
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 60ns
Access Time: 80ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 84-VFBGA
Supplier Device Package: 84-FBGA (11.6x8)

封裝: 84-VFBGA

庫存2,352

FLASH

FLASH - NOR

64Mb (4M x 16)

Parallel

108MHz

60ns

80ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

84-VFBGA

84-FBGA (11.6x8)

AS4C128M16MD2A-25BCNTR

Alliance Memory, Inc.

IC DRAM 2G PARALLEL 134FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-VFBGA
Supplier Device Package: 134-FBGA (10x11.5)

封裝: 134-VFBGA

庫存7,056

DRAM

SDRAM - Mobile LPDDR2

2Gb (128M x 16)

Parallel

400MHz

15ns

-

1.14 V ~ 1.95 V

-30°C ~ 85°C (TC)

Surface Mount

134-VFBGA

134-FBGA (10x11.5)

MT53D256M16D1NY-046 XT ES:B

Micron Technology Inc.

IC DRAM 16G 2133MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 16Gb (256M x 64)
Memory Interface: -
Clock Frequency: 2133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 105°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存3,680

DRAM

SDRAM - Mobile LPDDR4

16Gb (256M x 64)

-

2133MHz

-

1.1V

-30°C ~ 105°C (TC)

-

CG7816AAT

Cypress Semiconductor Corp

IC SRAM ASYNC 44TSOP II

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存2,368

-

AT24C04C-XPD-T

Microchip Technology

400KHZ AUTO TEMP 8-TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (512 x 8)
Memory Interface: I²C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封裝: 8-TSSOP (0.173", 4.40mm Width)

庫存5,568

EEPROM

4Kb (512 x 8)

I²C

400kHz

5ms

900ns

2.5V ~ 5.5V

-40°C ~ 125°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

AT24C01C-STPD-TVAO

Microchip Technology

1KB I2C EEPROM AUTO GRADE 1

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Memory Interface: I²C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Supplier Device Package: TSOT-23-5

封裝: SOT-23-5 Thin, TSOT-23-5

庫存3,584

EEPROM

1Kb (128 x 8)

I²C

1MHz

5ms

900ns

2.5V ~ 5.5V

-40°C ~ 125°C (TA)

Surface Mount

SOT-23-5 Thin, TSOT-23-5

TSOT-23-5

MT58L128L32F1T-6-8

Micron Technology Inc.

IC SRAM 4MBIT PARALLEL 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4Mbit
Memory Interface: Parallel
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: -
Access Time: 6.8 ns
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20.1)

封裝: -

Request a Quote

SRAM

SRAM - Synchronous

4Mbit

Parallel

133 MHz

-

6.8 ns

3.135V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20.1)

SM662GXC-BESS

Silicon Motion, Inc.

IC FLASH 160GBIT EMMC 100BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 160Gbit
Memory Interface: eMMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -25°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 100-LBGA
Supplier Device Package: 100-BGA (14x18)

封裝: -

Request a Quote

FLASH

FLASH - NAND (SLC)

160Gbit

eMMC

-

-25°C ~ 85°C

Surface Mount

100-LBGA

100-BGA (14x18)

M30042040054X0PSAR

Renesas Electronics Corporation

IC RAM 4MBIT 54MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: RAM
Technology: MRAM (Magnetoresistive RAM)
Memory Size: 4Mbit
Memory Interface: -
Clock Frequency: 54 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

封裝: -

Request a Quote

RAM

MRAM (Magnetoresistive RAM)

4Mbit

-

54 MHz

-

2.7V ~ 3.6V

-40°C ~ 105°C

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

GS8662QT37BGD-333I

GSI Technology Inc.

IC SRAM 72MBIT PARALLEL 165FPBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Quad Port, Synchronous
Memory Size: 72Mbit
Memory Interface: Parallel
Clock Frequency: 333 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 100°C (TJ)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FPBGA (15x13)

封裝: -

Request a Quote

SRAM

SRAM - Quad Port, Synchronous

72Mbit

Parallel

333 MHz

-

1.7V ~ 1.9V

-40°C ~ 100°C (TJ)

Surface Mount

165-LBGA

165-FPBGA (15x13)

CY6146CV30LL-70BAIT

Cypress Semiconductor Corp

ASYNC RAM

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

IS43LD32128C-18BLI

ISSI, Integrated Silicon Solution Inc

4G, 1.2/1.8V, LPDDR2, 128MX32, 5

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 4Gbit
Memory Interface: HSUL_12
Clock Frequency: 533 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.5 ns
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-TFBGA
Supplier Device Package: 134-TFBGA (10x11.5)

封裝: -

庫存300

DRAM

SDRAM - Mobile LPDDR2-S4

4Gbit

HSUL_12

533 MHz

15ns

5.5 ns

1.14V ~ 1.3V, 1.7V ~ 1.95V

-40°C ~ 85°C (TC)

Surface Mount

134-TFBGA

134-TFBGA (10x11.5)