頁 717 - 記憶體 | 積體電路 (IC) | 黑森爾電子
聯繫我們
SalesDept@heisener.com +86-755-83210559 ext. 809
Language Translation

* Please refer to the English Version as our Official Version.

記憶體

記錄 62,144
頁  717/2,220
圖片
零件編號
製造商
描述
封裝
庫存
數量
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IS25LQ016B-JKLE-TR
ISSI, Integrated Silicon Solution Inc

IC FLASH 16MBIT 104MHZ 8WSON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 16Mb (2M x 8)
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 104MHz
  • Write Cycle Time - Word, Page: 1ms
  • Access Time: -
  • Voltage - Supply: 2.3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (6x5)
封裝: 8-WDFN Exposed Pad
庫存2,400
FLASH
FLASH - NOR
16Mb (2M x 8)
SPI - Quad I/O
104MHz
1ms
-
2.3 V ~ 3.6 V
-40°C ~ 105°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (6x5)
IS43TR85120AL-15HBL-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 4GBIT 667MHZ 78BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 4Gb (512M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 667MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20ns
  • Voltage - Supply: 1.283 V ~ 1.45 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-TFBGA
  • Supplier Device Package: 78-TWBGA (9x10.5)
封裝: 78-TFBGA
庫存7,072
DRAM
SDRAM - DDR3L
4Gb (512M x 8)
Parallel
667MHz
15ns
20ns
1.283 V ~ 1.45 V
0°C ~ 95°C (TC)
Surface Mount
78-TFBGA
78-TWBGA (9x10.5)
PC28F256P30BFB TR
Micron Technology Inc.

IC FLASH 256MBIT 100NS 64EASYBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 52MHz
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 1.7 V ~ 2 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-TBGA
  • Supplier Device Package: 64-EasyBGA (10x13)
封裝: 64-TBGA
庫存2,848
FLASH
FLASH - NOR
256Mb (16M x 16)
Parallel
52MHz
100ns
100ns
1.7 V ~ 2 V
-40°C ~ 85°C (TA)
Surface Mount
64-TBGA
64-EasyBGA (10x13)
N01L63W3AB25I
ON Semiconductor

IC SRAM 1MBIT 70NS 48BGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (64K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 2.3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-LFBGA
  • Supplier Device Package: 48-BGA (6x8)
封裝: 48-LFBGA
庫存7,616
SRAM
SRAM - Asynchronous
1Mb (64K x 16)
Parallel
-
55ns
55ns
2.3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-LFBGA
48-BGA (6x8)
7134LA25P
IDT, Integrated Device Technology Inc

IC SRAM 32KBIT 25NS 48DIP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 32Kb (4K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 48-DIP (0.600", 15.24mm)
  • Supplier Device Package: 48-PDIP
封裝: 48-DIP (0.600", 15.24mm)
庫存3,248
SRAM
SRAM - Dual Port, Asynchronous
32Kb (4K x 8)
Parallel
-
25ns
25ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Through Hole
48-DIP (0.600", 15.24mm)
48-PDIP
CY7C1423AV18-267BZC
Cypress Semiconductor Corp

IC SRAM 36MBIT 267MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, DDR II
  • Memory Size: 36Mb (2M x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 267MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (15x17)
封裝: 165-LBGA
庫存5,616
SRAM
SRAM - Synchronous, DDR II
36Mb (2M x 18)
Parallel
267MHz
-
-
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-FBGA (15x17)
CY7C138-25JXC
Cypress Semiconductor Corp

IC SRAM 32KBIT 25NS 68PLCC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 32Kb (4K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 68-LCC (J-Lead)
  • Supplier Device Package: 68-PLCC (24.23x24.23)
封裝: 68-LCC (J-Lead)
庫存5,952
SRAM
SRAM - Dual Port, Asynchronous
32Kb (4K x 8)
Parallel
-
25ns
25ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
68-LCC (J-Lead)
68-PLCC (24.23x24.23)
AT28C010E-12FM/883
Microchip Technology

IC EEPROM 1MBIT 120NS 32FLATPACK

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 120ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -55°C ~ 125°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-CFlatpack
  • Supplier Device Package: 32-Flatpack, Ceramic Bottom-Brazed
封裝: 32-CFlatpack
庫存2,208
EEPROM
EEPROM
1Mb (128K x 8)
Parallel
-
10ms
120ns
4.5 V ~ 5.5 V
-55°C ~ 125°C (TC)
Surface Mount
32-CFlatpack
32-Flatpack, Ceramic Bottom-Brazed
MT35XU01GBBA1G12-0SIT TR
Micron Technology Inc.

SERIAL NOR SLC 128MX8 TBGA DDP

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存5,648
-
-
-
-
-
-
-
-
-
-
-
-
70T633S12BC8
IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 12NS 256CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 9Mb (512K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12ns
  • Voltage - Supply: 2.4 V ~ 2.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-LBGA
  • Supplier Device Package: 256-CABGA (17x17)
封裝: 256-LBGA
庫存2,960
SRAM
SRAM - Dual Port, Asynchronous
9Mb (512K x 18)
Parallel
-
12ns
12ns
2.4 V ~ 2.6 V
0°C ~ 70°C (TA)
Surface Mount
256-LBGA
256-CABGA (17x17)
CY7C1270KV18-400BZXI
Cypress Semiconductor Corp

IC SRAM 36MBIT 400MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, DDR II+
  • Memory Size: 36Mb (1M x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 400MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (13x15)
封裝: 165-LBGA
庫存4,848
SRAM
SRAM - Synchronous, DDR II+
36Mb (1M x 36)
Parallel
400MHz
-
-
1.7 V ~ 1.9 V
-40°C ~ 85°C (TA)
Surface Mount
165-LBGA
165-FBGA (13x15)
MT44K32M18RB-125E:A TR
Micron Technology Inc.

IC RLDRAM 576MBIT 800MHZ 168FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM
  • Memory Size: 576Mb (32M x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 800MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 10ns
  • Voltage - Supply: 1.28 V ~ 1.42 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 168-TBGA
  • Supplier Device Package: 168-BGA
封裝: 168-TBGA
庫存7,760
DRAM
DRAM
576Mb (32M x 18)
Parallel
800MHz
-
10ns
1.28 V ~ 1.42 V
0°C ~ 95°C (TC)
Surface Mount
168-TBGA
168-BGA
hot AS7C1026B-20TCN
Alliance Memory, Inc.

IC SRAM 1MBIT 20NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (64K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20ns
  • Access Time: 20ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
封裝: 44-TSOP (0.400", 10.16mm Width)
庫存14,940
SRAM
SRAM - Asynchronous
1Mb (64K x 16)
Parallel
-
20ns
20ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
M95320-DFMC6TG
STMicroelectronics

IC EEPROM 32KBIT 20MHZ 8UFDFPN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 32Kb (4K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 20MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UFDFN Exposed Pad
  • Supplier Device Package: 8-MLP (2x3)
封裝: 8-UFDFN Exposed Pad
庫存7,520
EEPROM
EEPROM
32Kb (4K x 8)
SPI
20MHz
5ms
-
1.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-UFDFN Exposed Pad
8-MLP (2x3)
hot SST39VF040-70-4I-WHE
Microchip Technology

IC FLASH 4MBIT 70NS 32TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20µs
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-TFSOP (0.488", 12.40mm Width)
  • Supplier Device Package: 32-TSOP
封裝: 32-TFSOP (0.488", 12.40mm Width)
庫存25,620
FLASH
FLASH
4Mb (512K x 8)
Parallel
-
20µs
70ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
32-TFSOP (0.488", 12.40mm Width)
32-TSOP
RM24C256C-LTAI-T
Adesto Technologies

IC EEPROM 256KBIT 1MHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 256kb (64B Page Size)
  • Memory Interface: I2C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 100µs, 5ms
  • Access Time: -
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
封裝: 8-TSSOP (0.173", 4.40mm Width)
庫存3,280
EEPROM
EEPROM
256kb (64B Page Size)
I2C
1MHz
100µs, 5ms
-
1.65 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
BR24G128NUX-3TTR
Rohm Semiconductor

IC EEPROM 128KBIT 400KHZ 8VSON

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 128Kb (16K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.6 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UFDFN Exposed Pad
  • Supplier Device Package: VSON008X2030
封裝: 8-UFDFN Exposed Pad
庫存2,512
EEPROM
EEPROM
128Kb (16K x 8)
I2C
400kHz
5ms
-
1.6 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-UFDFN Exposed Pad
VSON008X2030
hot AT24C01D-SSHM-T
Microchip Technology

IC EEPROM 1KBIT 1MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (128 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 4.5µs
  • Voltage - Supply: 1.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存31,464
EEPROM
EEPROM
1Kb (128 x 8)
I2C
1MHz
5ms
4.5µs
1.7 V ~ 3.6 V
-40°C ~ 85°C (TC)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MX25L8006EM1J-12G
Macronix

IC FLASH 8MBIT

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 8Mb (1M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 86MHz
  • Write Cycle Time - Word, Page: 50µs, 3ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存3,952
FLASH
FLASH - NOR
8Mb (1M x 8)
SPI
86MHz
50µs, 3ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
S29CL016J0PFFM030
Cypress Semiconductor Corp

IC GATE NOR

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 16Mb (512K x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 66MHz
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 54ns
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 80-LBGA
  • Supplier Device Package: 80-FBGA (13x11)
封裝: 80-LBGA
庫存5,296
FLASH
FLASH - NOR
16Mb (512K x 32)
Parallel
66MHz
60ns
54ns
1.65 V ~ 3.6 V
-40°C ~ 125°C (TA)
Surface Mount
80-LBGA
80-FBGA (13x11)
CY62157H30-55ZSXE
Infineon Technologies

ASYNC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 8Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55 ns
  • Voltage - Supply: 2.2V ~ 3.6V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
封裝: -
Request a Quote
SRAM
SRAM - Asynchronous
8Mbit
Parallel
-
55ns
55 ns
2.2V ~ 3.6V
-40°C ~ 125°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
IME1G16D3EEBG-15EI
Intelligent Memory Ltd.

ECC DDR3, 1GB, 1.5V, 64MX16, 667

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 1Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 667 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.425V ~ 1.575V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-FBGA (9x13)
封裝: -
Request a Quote
DRAM
SDRAM - DDR3
1Gbit
Parallel
667 MHz
15ns
20 ns
1.425V ~ 1.575V
-40°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-FBGA (9x13)
W25Q256JVFJM
Winbond Electronics

IC FLASH 256MBIT SPI/QUAD 16SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
封裝: -
Request a Quote
FLASH
FLASH - NOR
256Mbit
SPI - Quad I/O
133 MHz
3ms
-
2.7V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
W29N01HZDINF-TR
Winbond Electronics

IC FLASH 1GBIT ONFI 48VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 1Gbit
  • Memory Interface: ONFI
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 22 ns
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFBGA
  • Supplier Device Package: 48-VFBGA (8x6.5)
封裝: -
Request a Quote
FLASH
FLASH - NAND (SLC)
1Gbit
ONFI
-
25ns
22 ns
1.7V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
48-VFBGA
48-VFBGA (8x6.5)
EM32VSUKN-BA000-2
Delkin Devices, Inc.

IC FLASH 256GBIT EMMC 153FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 256Gbit
  • Memory Interface: eMMC
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 3.3V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 153-VFBGA
  • Supplier Device Package: 153-FBGA (11.5x13)
封裝: -
庫存5,232
FLASH
FLASH - NAND
256Gbit
eMMC
200 MHz
-
-
3.3V
-40°C ~ 85°C
Surface Mount
153-VFBGA
153-FBGA (11.5x13)
EAN62691701
Infineon Technologies

IC FLASH MEM NOR

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
W631GG8NB15J
Winbond Electronics

IC DRAM 1GBIT SSTL 15 78VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 1Gbit
  • Memory Interface: SSTL_15
  • Clock Frequency: 667 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.425V ~ 1.575V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-VFBGA
  • Supplier Device Package: 78-VFBGA (8x10.5)
封裝: -
Request a Quote
DRAM
SDRAM - DDR3
1Gbit
SSTL_15
667 MHz
15ns
20 ns
1.425V ~ 1.575V
-40°C ~ 105°C (TC)
Surface Mount
78-VFBGA
78-VFBGA (8x10.5)
GD25B16ESIGR
GigaDevice Semiconductor (HK) Limited

IC FLASH 16MBIT SPI/QUAD 8SOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 16Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 70µs, 2ms
  • Access Time: 7 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOP
封裝: -
Request a Quote
FLASH
FLASH - NOR (SLC)
16Mbit
SPI - Quad I/O
133 MHz
70µs, 2ms
7 ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOP