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記憶體

記錄 62,144
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圖片
零件編號
製造商
描述
封裝
庫存
數量
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IS29GL512S-11DHV01-TR
Cypress Semiconductor Corp

IC MEM FLASH NOR

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存6,560
-
-
-
-
-
-
-
-
-
-
-
-
S70GL02GP12FFI023
Cypress Semiconductor Corp

IC FLASH 2GBIT 120NS 64BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 2Gb (256M x 8, 128M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 120ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-FBGA (11x13)
封裝: 64-LBGA
庫存2,400
FLASH
FLASH - NOR
2Gb (256M x 8, 128M x 16)
Parallel
-
-
120ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
64-LBGA
64-FBGA (11x13)
70P269L65BYGI
IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 65NS 100FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 256Kb (16K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 65ns
  • Access Time: 65ns
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-TFBGA
  • Supplier Device Package: 100-CABGA (6x6)
封裝: 100-TFBGA
庫存7,600
SRAM
SRAM - Dual Port, Asynchronous
256Kb (16K x 16)
Parallel
-
65ns
65ns
1.7 V ~ 1.9 V
-40°C ~ 85°C (TA)
Surface Mount
100-TFBGA
100-CABGA (6x6)
MT29C4G96MAYBACKD-5 WT
Micron Technology Inc.

IC FLASH/LPDRAM 8GBIT 137TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH - NAND, Mobile LPDRAM
  • Memory Size: 4Gb (512M x 8)(NAND), 4Gb (128M x 32)(LPDRAM)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -25°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 137-TFBGA
  • Supplier Device Package: 137-TFBGA (10.5x13)
封裝: 137-TFBGA
庫存6,928
FLASH, RAM
FLASH - NAND, Mobile LPDRAM
4Gb (512M x 8)(NAND), 4Gb (128M x 32)(LPDRAM)
Parallel
200MHz
-
-
1.7 V ~ 1.95 V
-25°C ~ 85°C (TA)
Surface Mount
137-TFBGA
137-TFBGA (10.5x13)
MT29C1G12MAADVAMD-5 E IT TR
Micron Technology Inc.

IC FLASH/LPDRAM 1.5GBIT 130VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH - NAND, Mobile LPDRAM
  • Memory Size: 1Gb (64M x 16)(NAND), 512Mb (32M x 16)(LPDRAM)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 130-VFBGA
  • Supplier Device Package: 130-VFBGA (8x9)
封裝: 130-VFBGA
庫存6,208
FLASH, RAM
FLASH - NAND, Mobile LPDRAM
1Gb (64M x 16)(NAND), 512Mb (32M x 16)(LPDRAM)
Parallel
200MHz
-
-
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
130-VFBGA
130-VFBGA (8x9)
STK14CA8-RF45I
Cypress Semiconductor Corp

IC NVSRAM 1MBIT 45NS 48SSOP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-BSSOP (0.295", 7.50mm Width)
  • Supplier Device Package: 48-SSOP
封裝: 48-BSSOP (0.295", 7.50mm Width)
庫存3,632
NVSRAM
NVSRAM (Non-Volatile SRAM)
1Mb (128K x 8)
Parallel
-
45ns
45ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-BSSOP (0.295", 7.50mm Width)
48-SSOP
IDT71P73804S167BQ8
IDT, Integrated Device Technology Inc

IC SRAM 18MBIT 167MHZ 165CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - DDR2
  • Memory Size: 18Mb (1M x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 8.4ns
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-CABGA (13x15)
封裝: 165-TBGA
庫存5,104
SRAM
SRAM - DDR2
18Mb (1M x 18)
Parallel
167MHz
-
8.4ns
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
165-TBGA
165-CABGA (13x15)
STK11C68-5C45M
Cypress Semiconductor Corp

IC NVSRAM 64KBIT 45NS 28CDIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -55°C ~ 125°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 28-CDIP (0.300", 7.62mm)
  • Supplier Device Package: 28-CDIP
封裝: 28-CDIP (0.300", 7.62mm)
庫存2,432
NVSRAM
NVSRAM (Non-Volatile SRAM)
64Kb (8K x 8)
Parallel
-
45ns
45ns
4.5 V ~ 5.5 V
-55°C ~ 125°C (TA)
Through Hole
28-CDIP (0.300", 7.62mm)
28-CDIP
CY7C1523AV18-250BZC
Cypress Semiconductor Corp

IC SRAM 72MBIT 250MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, DDR II
  • Memory Size: 72Mb (4M x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 250MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (15x17)
封裝: 165-LBGA
庫存2,736
SRAM
SRAM - Synchronous, DDR II
72Mb (4M x 18)
Parallel
250MHz
-
-
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-FBGA (15x17)
M50FLW080BK5TG TR
Micron Technology Inc.

IC FLASH 8MBIT 33MHZ 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 8Mb (1M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 33MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 250ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC (11.35x13.89)
封裝: 32-LCC (J-Lead)
庫存2,848
FLASH
FLASH - NOR
8Mb (1M x 8)
Parallel
33MHz
-
250ns
3 V ~ 3.6 V
-20°C ~ 85°C (TA)
Surface Mount
32-LCC (J-Lead)
32-PLCC (11.35x13.89)
CY7C1020CV33-10ZXCT
Cypress Semiconductor Corp

IC SRAM 512KBIT 10NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 512Kb (32K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
封裝: 44-TSOP (0.400", 10.16mm Width)
庫存4,080
SRAM
SRAM - Asynchronous
512Kb (32K x 16)
Parallel
-
10ns
10ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
hot AT49LH00B4-33JC
Microchip Technology

IC FLASH 4MBIT 33MHZ 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 33MHz
  • Write Cycle Time - Word, Page: 50µs
  • Access Time: -
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
封裝: 32-LCC (J-Lead)
庫存90,000
FLASH
FLASH
4Mb (512K x 8)
Parallel
33MHz
50µs
-
3 V ~ 3.6 V
0°C ~ 85°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC
PSD835G2V-90U
STMicroelectronics

IC FLASH 4MBIT 90NS 80LQFP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 90ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 80-LQFP
  • Supplier Device Package: 80-LQFP (12x12)
封裝: 80-LQFP
庫存5,568
FLASH
FLASH
4Mb (512K x 8)
Parallel
-
-
90ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
80-LQFP
80-LQFP (12x12)
AT28C256F-15TI
Microchip Technology

IC EEPROM 256KBIT 150NS 28TSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: 150ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 28-TSSOP (0.465", 11.80mm Width)
  • Supplier Device Package: 28-TSOP
封裝: 28-TSSOP (0.465", 11.80mm Width)
庫存4,784
EEPROM
EEPROM
256Kb (32K x 8)
Parallel
-
3ms
150ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
28-TSSOP (0.465", 11.80mm Width)
28-TSOP
MT29F384G08EBCBBJ4-37:B TR
Micron Technology Inc.

IC FLASH 384GBIT 267MHZ 132VBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 384Gb (48G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 267MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存2,672
FLASH
FLASH - NAND
384Gb (48G x 8)
Parallel
267MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
7016S15J8
IDT, Integrated Device Technology Inc

IC SRAM 144KBIT 15NS 68PLCC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 144Kb (16K x 9)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 15ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 68-LCC (J-Lead)
  • Supplier Device Package: 68-PLCC (24.21x24.21)
封裝: 68-LCC (J-Lead)
庫存4,896
SRAM
SRAM - Dual Port, Asynchronous
144Kb (16K x 9)
Parallel
-
15ns
15ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
68-LCC (J-Lead)
68-PLCC (24.21x24.21)
71V321S55PF
IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 55NS 64TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-TQFP (14x14)
封裝: 64-LQFP
庫存7,984
SRAM
SRAM - Dual Port, Asynchronous
16Kb (2K x 8)
Parallel
-
55ns
55ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
64-LQFP
64-TQFP (14x14)
IS62WV102416DBLL-45TLI-TR
ISSI, Integrated Silicon Solution Inc

IC SRAM 16MBIT 45NS 48TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45ns
  • Voltage - Supply: 2.2 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
封裝: 48-TFSOP (0.724", 18.40mm Width)
庫存2,992
SRAM
SRAM - Asynchronous
16Mb (1M x 16)
Parallel
-
45ns
45ns
2.2 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
MB85RC64APNF-G-JNERE1
Fujitsu Electronics America, Inc.

IC FRAM 64KBIT 1MHZ 8SOP

  • Memory Type: Non-Volatile
  • Memory Format: FRAM
  • Technology: FRAM (Ferroelectric RAM)
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 550ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存116,856
FRAM
FRAM (Ferroelectric RAM)
64Kb (8K x 8)
I2C
1MHz
-
550ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
MT25QU128ABA1ESE-MSIT TR
Micron Technology Inc.

IC FLASH 128M SPI 133MHZ 8SOP2

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (16M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 8ms, 2.8ms
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 2 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOP2
封裝: 8-SOIC (0.209", 5.30mm Width)
庫存7,456
FLASH
FLASH - NOR
128Mb (16M x 8)
SPI
133MHz
8ms, 2.8ms
-
1.7 V ~ 2 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOP2
W25N512GWEIR-TR
Winbond Electronics

IC FLASH 512MBIT SPI/QUAD 8WSON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 512Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 104 MHz
  • Write Cycle Time - Word, Page: 700µs
  • Access Time: 7 ns
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (8x6)
封裝: -
Request a Quote
FLASH
FLASH - NAND (SLC)
512Mbit
SPI - Quad I/O
104 MHz
700µs
7 ns
1.7V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (8x6)
MT62F8D1DCL-DC-TR
Micron Technology Inc.

LPDDR5 FBGA Y42M

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
CG8209AA
Infineon Technologies

IC SRAM MICROPOWER

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
MT53E2G32D4DE-046-AUT-C-TR
Micron Technology Inc.

LPDDR4 64G 2GX32 FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4X
  • Memory Size: 64Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 2.133 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V
  • Operating Temperature: -40°C ~ 125°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-TFBGA
  • Supplier Device Package: 200-TFBGA (10x14.5)
封裝: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4X
64Gbit
Parallel
2.133 GHz
18ns
3.5 ns
1.06V ~ 1.17V
-40°C ~ 125°C (TC)
Surface Mount
200-TFBGA
200-TFBGA (10x14.5)
MT29GZ5A3BPGGA-046IT-87K
Micron Technology Inc.

NAND MCP 6G

  • Memory Type: Non-Volatile, Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH - NAND (SLC), DRAM - LPDDR4
  • Memory Size: 4Gbit
  • Memory Interface: ONFI
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 30ns
  • Access Time: 25 ns
  • Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 149-WFBGA
  • Supplier Device Package: 149-WFBGA (8x9.5)
封裝: -
Request a Quote
FLASH, RAM
FLASH - NAND (SLC), DRAM - LPDDR4
4Gbit
ONFI
-
30ns
25 ns
1.06V ~ 1.17V, 1.7V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
149-WFBGA
149-WFBGA (8x9.5)
GD25VQ20CTIGR
GigaDevice Semiconductor (HK) Limited

IC FLASH 2MBIT SPI/QUAD I/O 8SOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 2Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 104 MHz
  • Write Cycle Time - Word, Page: 50µs, 3ms
  • Access Time: -
  • Voltage - Supply: 2.3V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封裝: -
Request a Quote
FLASH
FLASH - NOR
2Mbit
SPI - Quad I/O
104 MHz
50µs, 3ms
-
2.3V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
X28HC256JZ-12
Renesas Electronics Corporation

32K X 8 EEPROM,CMOS,HIGHSPEED,32

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 256Kbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 120 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC (13.97x11.43)
封裝: -
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EEPROM
EEPROM
256Kbit
Parallel
-
5ms
120 ns
4.5V ~ 5.5V
0°C ~ 70°C (TA)
Surface Mount
32-LCC (J-Lead)
32-PLCC (13.97x11.43)
IS49RL36160A-093EBLI
ISSI, Integrated Silicon Solution Inc

IC DRAM 576MBIT PAR 168FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: RLDRAM 3
  • Memory Size: 576Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 1.066 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 7.5 ns
  • Voltage - Supply: 1.28V ~ 1.42V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 168-LBGA
  • Supplier Device Package: 168-FBGA (13.5x13.5)
封裝: -
庫存345
DRAM
RLDRAM 3
576Mbit
Parallel
1.066 GHz
-
7.5 ns
1.28V ~ 1.42V
-40°C ~ 95°C (TC)
Surface Mount
168-LBGA
168-FBGA (13.5x13.5)