頁 648 - 記憶體 | 積體電路 (IC)

零件編號	製造商	描述	封裝	庫存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
W25Q32FVTCIG	Winbond Electronics	IC FLASH 32MBIT 104MHZ 24TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (4M x 8) Memory Interface: SPI Clock Frequency: 104MHz Write Cycle Time - Word, Page: 3ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-TFBGA (6x8)	封裝: 24-TBGA	庫存5,760	FLASH	FLASH - NOR	32Mb (4M x 8)	SPI	104MHz	3ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	24-TBGA	24-TFBGA (6x8)
N25Q032A11ESF40F TR	Micron Technology Inc.	IC FLASH 32MBIT 108MHZ 16SO Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (8M x 4) Memory Interface: SPI Clock Frequency: 108MHz Write Cycle Time - Word, Page: 8ms, 5ms Access Time: - Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOP2	封裝: 16-SOIC (0.295", 7.50mm Width)	庫存6,960	FLASH	FLASH - NOR	32Mb (8M x 4)	SPI	108MHz	8ms, 5ms	-	1.7 V ~ 2 V	-40°C ~ 85°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOP2
MT48H4M32LFB5-75:K	Micron Technology Inc.	IC SDRAM 128MBIT 133MHZ 90VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPSDR Memory Size: 128Mb (4M x 32) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.4ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 90-VFBGA Supplier Device Package: 90-VFBGA (8x13)	封裝: 90-VFBGA	庫存6,448	DRAM	SDRAM - Mobile LPSDR	128Mb (4M x 32)	Parallel	133MHz	15ns	5.4ns	1.7 V ~ 1.95 V	0°C ~ 70°C (TA)	Surface Mount	90-VFBGA	90-VFBGA (8x13)
SST39VF512-70-4I-WHE-T	Microchip Technology	IC FLASH 512KBIT 70NS 32TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 512Kb (64K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20µs Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.488", 12.40mm Width) Supplier Device Package: 32-TSOP	封裝: 32-TFSOP (0.488", 12.40mm Width)	庫存6,048	FLASH	FLASH	512Kb (64K x 8)	Parallel	-	20µs	70ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	32-TFSOP (0.488", 12.40mm Width)	32-TSOP
NAND02GW3B2DN6E	Micron Technology Inc.	IC FLASH 2GBIT 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP	封裝: 48-TFSOP (0.724", 18.40mm Width)	庫存148,320	FLASH	FLASH - NAND	2Gb (256M x 8)	Parallel	-	25ns	25ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP
JS28F640P30T85A	Micron Technology Inc.	IC FLASH 64MBIT 85NS 56TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (4M x 16) Memory Interface: Parallel Clock Frequency: 40MHz Write Cycle Time - Word, Page: 85ns Access Time: 85ns Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 56-TSOP (14x20)	封裝: 56-TFSOP (0.724", 18.40mm Width)	庫存13,428	FLASH	FLASH - NOR	64Mb (4M x 16)	Parallel	40MHz	85ns	85ns	1.7 V ~ 2 V	-40°C ~ 85°C (TA)	Surface Mount	56-TFSOP (0.724", 18.40mm Width)	56-TSOP (14x20)
M27C2001-10F1	STMicroelectronics	IC EPROM UV 2MBIT 100NS 32CDIP Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - UV Memory Size: 2Mb (256K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 100ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 32-CDIP (0.600", 15.24mm) Window Supplier Device Package: 32-CDIP Frit Seal with Window	封裝: 32-CDIP (0.600", 15.24mm) Window	庫存41,688	EPROM	EPROM - UV	2Mb (256K x 8)	Parallel	-	-	100ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Through Hole	32-CDIP (0.600", 15.24mm) Window	32-CDIP Frit Seal with Window
AT45D081-RI	Microchip Technology	IC FLASH 8MBIT 15MHZ 28SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 8Mb (264 Bytes x 4096 pages) Memory Interface: SPI Clock Frequency: 10MHz Write Cycle Time - Word, Page: 14ms Access Time: - Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.342", 8.69mm Width) Supplier Device Package: 28-SOIC	封裝: 28-SOIC (0.342", 8.69mm Width)	庫存7,984	FLASH	FLASH	8Mb (264 Bytes x 4096 pages)	SPI	10MHz	14ms	-	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	28-SOIC (0.342", 8.69mm Width)	28-SOIC
CY7C1562XV18-450BZC	Cypress Semiconductor Corp	IC SRAM 72MBIT 450MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II+ Memory Size: 72Mb (4M x 18) Memory Interface: Parallel Clock Frequency: 450MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	封裝: 165-LBGA	庫存5,648	SRAM	SRAM - Synchronous, QDR II+	72Mb (4M x 18)	Parallel	450MHz	-	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
71256L70TDB	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 70NS 28CDIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 28-CDIP (0.300", 7.62mm) Supplier Device Package: 28-CDIP	封裝: 28-CDIP (0.300", 7.62mm)	庫存4,160	SRAM	SRAM - Asynchronous	256Kb (32K x 8)	Parallel	-	70ns	70ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	28-CDIP (0.300", 7.62mm)	28-CDIP
W29GL064CH7T	Winbond Electronics	IC FLASH 64MBIT 70NS 56TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8, 4M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 56-TSOP (14x20)	封裝: 56-TFSOP (0.724", 18.40mm Width)	庫存81,612	FLASH	FLASH - NOR	64Mb (8M x 8, 4M x 16)	Parallel	-	70ns	70ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	56-TFSOP (0.724", 18.40mm Width)	56-TSOP (14x20)
24LC64T-E/ST	Microchip Technology	IC EEPROM 64KBIT 400KHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kb (8K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封裝: 8-TSSOP (0.173", 4.40mm Width)	庫存7,456	EEPROM	EEPROM	64Kb (8K x 8)	I2C	400kHz	5ms	900ns	2.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
25C320/P	Microchip Technology	IC EEPROM 32KBIT 3MHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 32Kb (4K x 8) Memory Interface: SPI Clock Frequency: 3MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	封裝: 8-DIP (0.300", 7.62mm)	庫存18,804	EEPROM	EEPROM	32Kb (4K x 8)	SPI	3MHz	5ms	-	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
CY7C1570KV18-500BZC	Cypress Semiconductor Corp	IC SRAM 72MBIT 500MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, DDR II+ Memory Size: 72Mb (2M x 36) Memory Interface: Parallel Clock Frequency: 500MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	封裝: 165-LBGA	庫存6,960	SRAM	SRAM - Synchronous, DDR II+	72Mb (2M x 36)	Parallel	500MHz	-	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
CY14V101QS-BK108XQ	Cypress Semiconductor Corp	IC NVSRAM 1MBIT 108MHZ 24FBGA Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 1Mb (128K x 8) Memory Interface: SPI Clock Frequency: 108MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-FBGA (6x8)	封裝: 24-TBGA	庫存8,292	NVSRAM	NVSRAM (Non-Volatile SRAM)	1Mb (128K x 8)	SPI	108MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	24-TBGA	24-FBGA (6x8)
AT24CS02-SSHM-T	Microchip Technology	IC EEPROM 2KBIT 1MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 550ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存32,976	EEPROM	EEPROM	2Kb (256 x 8)	I2C	1MHz	5ms	550ns	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
93C66C-I/S15K	Microchip Technology	IC EEPROM 4K SPI 3MHZ WAFER Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (512 x 8, 256 x 16) Memory Interface: SPI Clock Frequency: 3MHz Write Cycle Time - Word, Page: 2ms Access Time: - Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封裝: Die	庫存3,312	EEPROM	EEPROM	4Kb (512 x 8, 256 x 16)	SPI	3MHz	2ms	-	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	Die	Die
MT29F1T08EEHAFJ4-3T:A TR	Micron Technology Inc.	IC FLASH 1T PARALLEL 333MHZ Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Tb (128G x 8) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.5 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存2,480	FLASH	FLASH - NAND	1Tb (128G x 8)	Parallel	333MHz	-	-	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT40A2G4SA-075:E TR	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.33GHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 8Gb (2G x 4) Memory Interface: Parallel Clock Frequency: 1.33GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.26 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存2,192	DRAM	SDRAM - DDR4	8Gb (2G x 4)	Parallel	1.33GHz	-	-	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	-	-	-
MT53E2G32D4DT-046 AAT:A	Micron Technology Inc.	IC DRAM LPDDR4 FBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存4,336	-	-	-	-	-	-	-	-	-	-	-	-
IS46TR16640C-107MBLA2	ISSI, Integrated Silicon Solution Inc	Automotive (Tc: -40 to +105C), 1 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 1Gbit Memory Interface: Parallel Clock Frequency: 933 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	封裝: -	Request a Quote	DRAM	SDRAM - DDR3	1Gbit	Parallel	933 MHz	15ns	20 ns	1.425V ~ 1.575V	-40°C ~ 105°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
FM27C010V120	Fairchild Semiconductor	IC EPROM 1MBIT PARALLEL 32PLCC Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 1Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 120 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC (14x11.46)	封裝: -	Request a Quote	EPROM	EPROM - OTP	1Mbit	Parallel	-	-	120 ns	4.5V ~ 5.5V	0°C ~ 70°C (TA)	Surface Mount	32-LCC (J-Lead)	32-PLCC (14x11.46)
CAT25160YI-GC	onsemi	IC EEPROM 16KBIT SPI 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kbit Memory Interface: SPI Clock Frequency: 10 MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封裝: -	Request a Quote	EEPROM	EEPROM	16Kbit	SPI	10 MHz	5ms	-	1.8V ~ 5.5V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
MT58L64L18DT-7-5TR	Micron Technology Inc.	IC SRAM 1MBIT PARALLEL 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Standard Memory Size: 1Mbit Memory Interface: Parallel Clock Frequency: 133 MHz Write Cycle Time - Word, Page: - Access Time: 4.2 ns Voltage - Supply: 3.135V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20.1)	封裝: -	Request a Quote	SRAM	SRAM - Standard	1Mbit	Parallel	133 MHz	-	4.2 ns	3.135V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20.1)
S-93C66CD0H-T8T2U3	ABLIC Inc.	LINEAR IC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kbit Memory Interface: Microwire Clock Frequency: 2 MHz Write Cycle Time - Word, Page: 4ms Access Time: - Voltage - Supply: 1.6V ~ 5.5V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封裝: -	Request a Quote	EEPROM	EEPROM	4Kbit	Microwire	2 MHz	4ms	-	1.6V ~ 5.5V	-40°C ~ 105°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
CAT28LV64G-20	onsemi	IC EEPROM 64KBIT 32PLCC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kbit Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: 5ms Access Time: 200 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC (13.97x11.43)	封裝: -	Request a Quote	EEPROM	EEPROM	64Kbit	-	-	5ms	200 ns	3V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	32-LCC (J-Lead)	32-PLCC (13.97x11.43)
W634GU6QB-11-TR	Winbond Electronics	IC DRAM 4GBIT PAR 96VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gbit Memory Interface: Parallel Clock Frequency: 933 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-VFBGA Supplier Device Package: 96-VFBGA (7.5x13)	封裝: -	Request a Quote	DRAM	SDRAM - DDR3L	4Gbit	Parallel	933 MHz	15ns	20 ns	1.283V ~ 1.45V	0°C ~ 95°C (TC)	Surface Mount	96-VFBGA	96-VFBGA (7.5x13)
IS29GL256-70FLEB	ISSI, Integrated Silicon Solution Inc	IC FLASH 256MBIT PAR 64LFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 200µs Access Time: 70 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-LFBGA (11x13)	封裝: -	Request a Quote	FLASH	FLASH - NOR	256Mbit	Parallel	-	200µs	70 ns	2.7V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	64-LBGA	64-LFBGA (11x13)

W25Q32FVTCIG

Winbond Electronics

IC FLASH 32MBIT 104MHZ 24TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8)
Memory Interface: SPI
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 3ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-TFBGA (6x8)

封裝: 24-TBGA

庫存5,760

FLASH

FLASH - NOR

32Mb (4M x 8)

SPI

104MHz

3ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

24-TBGA

24-TFBGA (6x8)

N25Q032A11ESF40F TR

Micron Technology Inc.

IC FLASH 32MBIT 108MHZ 16SO

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (8M x 4)
Memory Interface: SPI
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 8ms, 5ms
Access Time: -
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOP2

封裝: 16-SOIC (0.295", 7.50mm Width)

庫存6,960

FLASH

FLASH - NOR

32Mb (8M x 4)

SPI

108MHz

8ms, 5ms

-

1.7 V ~ 2 V

-40°C ~ 85°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOP2

MT48H4M32LFB5-75:K

Micron Technology Inc.

IC SDRAM 128MBIT 133MHZ 90VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPSDR
Memory Size: 128Mb (4M x 32)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.4ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-VFBGA
Supplier Device Package: 90-VFBGA (8x13)

封裝: 90-VFBGA

庫存6,448

DRAM

SDRAM - Mobile LPSDR

128Mb (4M x 32)

Parallel

133MHz

15ns

5.4ns

1.7 V ~ 1.95 V

0°C ~ 70°C (TA)

Surface Mount

90-VFBGA

90-VFBGA (8x13)

SST39VF512-70-4I-WHE-T

Microchip Technology

IC FLASH 512KBIT 70NS 32TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 512Kb (64K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20µs
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.488", 12.40mm Width)
Supplier Device Package: 32-TSOP

封裝: 32-TFSOP (0.488", 12.40mm Width)

庫存6,048

FLASH

512Kb (64K x 8)

Parallel

-

20µs

70ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

32-TFSOP (0.488", 12.40mm Width)

32-TSOP

NAND02GW3B2DN6E

Micron Technology Inc.

IC FLASH 2GBIT 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Gb (256M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP

封裝: 48-TFSOP (0.724", 18.40mm Width)

庫存148,320

FLASH

FLASH - NAND

2Gb (256M x 8)

Parallel

-

25ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP

JS28F640P30T85A

Micron Technology Inc.

IC FLASH 64MBIT 85NS 56TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (4M x 16)
Memory Interface: Parallel
Clock Frequency: 40MHz
Write Cycle Time - Word, Page: 85ns
Access Time: 85ns
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP (14x20)

封裝: 56-TFSOP (0.724", 18.40mm Width)

庫存13,428

FLASH

FLASH - NOR

64Mb (4M x 16)

Parallel

40MHz

85ns

1.7 V ~ 2 V

-40°C ~ 85°C (TA)

Surface Mount

56-TFSOP (0.724", 18.40mm Width)

56-TSOP (14x20)

M27C2001-10F1

STMicroelectronics

IC EPROM UV 2MBIT 100NS 32CDIP

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - UV
Memory Size: 2Mb (256K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 100ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 32-CDIP (0.600", 15.24mm) Window
Supplier Device Package: 32-CDIP Frit Seal with Window

封裝: 32-CDIP (0.600", 15.24mm) Window

庫存41,688

EPROM

EPROM - UV

2Mb (256K x 8)

Parallel

-

100ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Through Hole

32-CDIP (0.600", 15.24mm) Window

32-CDIP Frit Seal with Window

AT45D081-RI

Microchip Technology

IC FLASH 8MBIT 15MHZ 28SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 8Mb (264 Bytes x 4096 pages)
Memory Interface: SPI
Clock Frequency: 10MHz
Write Cycle Time - Word, Page: 14ms
Access Time: -
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Supplier Device Package: 28-SOIC

封裝: 28-SOIC (0.342", 8.69mm Width)

庫存7,984

FLASH

8Mb (264 Bytes x 4096 pages)

SPI

10MHz

14ms

-

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

28-SOIC (0.342", 8.69mm Width)

28-SOIC

CY7C1562XV18-450BZC

Cypress Semiconductor Corp

IC SRAM 72MBIT 450MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II+
Memory Size: 72Mb (4M x 18)
Memory Interface: Parallel
Clock Frequency: 450MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

封裝: 165-LBGA

庫存5,648

SRAM

SRAM - Synchronous, QDR II+

72Mb (4M x 18)

Parallel

450MHz

-

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

71256L70TDB

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 70NS 28CDIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 28-CDIP (0.300", 7.62mm)
Supplier Device Package: 28-CDIP

封裝: 28-CDIP (0.300", 7.62mm)

庫存4,160

SRAM

SRAM - Asynchronous

256Kb (32K x 8)

Parallel

-

70ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

28-CDIP (0.300", 7.62mm)

28-CDIP

W29GL064CH7T

Winbond Electronics

IC FLASH 64MBIT 70NS 56TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8, 4M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP (14x20)

封裝: 56-TFSOP (0.724", 18.40mm Width)

庫存81,612

FLASH

FLASH - NOR

64Mb (8M x 8, 4M x 16)

Parallel

-

70ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

56-TFSOP (0.724", 18.40mm Width)

56-TSOP (14x20)

24LC64T-E/ST

Microchip Technology

IC EEPROM 64KBIT 400KHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kb (8K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封裝: 8-TSSOP (0.173", 4.40mm Width)

庫存7,456

EEPROM

64Kb (8K x 8)

I2C

400kHz

5ms

900ns

2.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

25C320/P

Microchip Technology

IC EEPROM 32KBIT 3MHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 32Kb (4K x 8)
Memory Interface: SPI
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

封裝: 8-DIP (0.300", 7.62mm)

庫存18,804

EEPROM

32Kb (4K x 8)

SPI

3MHz

5ms

-

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

CY7C1570KV18-500BZC

Cypress Semiconductor Corp

IC SRAM 72MBIT 500MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, DDR II+
Memory Size: 72Mb (2M x 36)
Memory Interface: Parallel
Clock Frequency: 500MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

封裝: 165-LBGA

庫存6,960

SRAM

SRAM - Synchronous, DDR II+

72Mb (2M x 36)

Parallel

500MHz

-

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

CY14V101QS-BK108XQ

Cypress Semiconductor Corp

IC NVSRAM 1MBIT 108MHZ 24FBGA

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 1Mb (128K x 8)
Memory Interface: SPI
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-FBGA (6x8)

封裝: 24-TBGA

庫存8,292

NVSRAM

NVSRAM (Non-Volatile SRAM)

1Mb (128K x 8)

SPI

108MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

24-TBGA

24-FBGA (6x8)

AT24CS02-SSHM-T

Microchip Technology

IC EEPROM 2KBIT 1MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 550ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存32,976

EEPROM

2Kb (256 x 8)

I2C

1MHz

5ms

550ns

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

93C66C-I/S15K

Microchip Technology

IC EEPROM 4K SPI 3MHZ WAFER

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (512 x 8, 256 x 16)
Memory Interface: SPI
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 2ms
Access Time: -
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封裝: Die

庫存3,312

EEPROM

4Kb (512 x 8, 256 x 16)

SPI

3MHz

2ms

-

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

Die

MT29F1T08EEHAFJ4-3T:A TR

Micron Technology Inc.

IC FLASH 1T PARALLEL 333MHZ

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Tb (128G x 8)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存2,480

FLASH

FLASH - NAND

1Tb (128G x 8)

Parallel

333MHz

-

2.5 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT40A2G4SA-075:E TR

Micron Technology Inc.

IC DRAM 8G PARALLEL 1.33GHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 8Gb (2G x 4)
Memory Interface: Parallel
Clock Frequency: 1.33GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.26 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存2,192

DRAM

SDRAM - DDR4

8Gb (2G x 4)

Parallel

1.33GHz

-

1.14 V ~ 1.26 V

0°C ~ 95°C (TC)

-

MT53E2G32D4DT-046 AAT:A

Micron Technology Inc.

IC DRAM LPDDR4 FBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存4,336

-

IS46TR16640C-107MBLA2

ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +105C), 1

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 1Gbit
Memory Interface: Parallel
Clock Frequency: 933 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

封裝: -

Request a Quote

DRAM

SDRAM - DDR3

1Gbit

Parallel

933 MHz

15ns

20 ns

1.425V ~ 1.575V

-40°C ~ 105°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

FM27C010V120

Fairchild Semiconductor

IC EPROM 1MBIT PARALLEL 32PLCC

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 1Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 120 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC (14x11.46)

封裝: -

Request a Quote

EPROM

EPROM - OTP

1Mbit

Parallel

-

120 ns

4.5V ~ 5.5V

0°C ~ 70°C (TA)

Surface Mount

32-LCC (J-Lead)

32-PLCC (14x11.46)

CAT25160YI-GC

onsemi

IC EEPROM 16KBIT SPI 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kbit
Memory Interface: SPI
Clock Frequency: 10 MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封裝: -

Request a Quote

EEPROM

16Kbit

SPI

10 MHz

5ms

-

1.8V ~ 5.5V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

MT58L64L18DT-7-5TR

Micron Technology Inc.

IC SRAM 1MBIT PARALLEL 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Standard
Memory Size: 1Mbit
Memory Interface: Parallel
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: -
Access Time: 4.2 ns
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20.1)

封裝: -

Request a Quote

SRAM

SRAM - Standard

1Mbit

Parallel

133 MHz

-

4.2 ns

3.135V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20.1)

S-93C66CD0H-T8T2U3

ABLIC Inc.

LINEAR IC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kbit
Memory Interface: Microwire
Clock Frequency: 2 MHz
Write Cycle Time - Word, Page: 4ms
Access Time: -
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封裝: -

Request a Quote

EEPROM

4Kbit

Microwire

2 MHz

4ms

-

1.6V ~ 5.5V

-40°C ~ 105°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

CAT28LV64G-20

onsemi

IC EEPROM 64KBIT 32PLCC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kbit
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: 5ms
Access Time: 200 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC (13.97x11.43)

封裝: -

Request a Quote

EEPROM

64Kbit

-

5ms

200 ns

3V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

32-LCC (J-Lead)

32-PLCC (13.97x11.43)

W634GU6QB-11-TR

Winbond Electronics

IC DRAM 4GBIT PAR 96VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gbit
Memory Interface: Parallel
Clock Frequency: 933 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-VFBGA
Supplier Device Package: 96-VFBGA (7.5x13)

封裝: -

Request a Quote

DRAM

SDRAM - DDR3L

4Gbit

Parallel

933 MHz

15ns

20 ns

1.283V ~ 1.45V

0°C ~ 95°C (TC)

Surface Mount

96-VFBGA

96-VFBGA (7.5x13)

IS29GL256-70FLEB

ISSI, Integrated Silicon Solution Inc

IC FLASH 256MBIT PAR 64LFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 200µs
Access Time: 70 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-LFBGA (11x13)

封裝: -

Request a Quote

FLASH

FLASH - NOR

256Mbit

Parallel

-

200µs

70 ns

2.7V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

64-LBGA

64-LFBGA (11x13)