頁 599 - 記憶體 | 積體電路 (IC)

零件編號	製造商	描述	封裝	庫存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
PC28F512P30BF0	Micron Technology Inc.	IC FLASH 512MBIT 100NS 64EASYBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 52MHz Write Cycle Time - Word, Page: 100ns Access Time: 100ns Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-TBGA Supplier Device Package: 64-EasyBGA (8x10)	封裝: 64-TBGA	庫存4,640	FLASH	FLASH - NOR	512Mb (32M x 16)	Parallel	52MHz	100ns	100ns	1.7 V ~ 2 V	-40°C ~ 85°C (TA)	Surface Mount	64-TBGA	64-EasyBGA (8x10)
7052L20PQF	IDT, Integrated Device Technology Inc	IC SRAM 16KBIT 20NS 132QFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Quad Port, Asynchronous Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 132-BQFP Bumpered Supplier Device Package: 132-PQFP (24.13x24.13)	封裝: 132-BQFP Bumpered	庫存3,824	SRAM	SRAM - Quad Port, Asynchronous	16Kb (2K x 8)	Parallel	-	20ns	20ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	132-BQFP Bumpered	132-PQFP (24.13x24.13)
S-93L66AR0I-J8T1G	SII Semiconductor Corporation	IC EEPROM 4KBIT 2MHZ 8SOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (256 x 16) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 8ms Access Time: - Voltage - Supply: 1.6 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存7,968	EEPROM	EEPROM	4Kb (256 x 16)	SPI	2MHz	8ms	-	1.6 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
IS41LV16100B-60KL	ISSI, Integrated Silicon Solution Inc	IC DRAM 16MBIT 60NS 42SOJ Memory Type: Volatile Memory Format: DRAM Technology: DRAM - EDO Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 30ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 42-BSOJ (0.400", 10.16mm) Supplier Device Package: 42-SOJ	封裝: 42-BSOJ (0.400", 10.16mm)	庫存5,248	DRAM	DRAM - EDO	16Mb (1M x 16)	Parallel	-	-	30ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	42-BSOJ (0.400", 10.16mm)	42-SOJ
MT48LC16M16A2BG-7E:D TR	Micron Technology Inc.	IC SDRAM 256MBIT 133MHZ 54VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: 14ns Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-VFBGA Supplier Device Package: 54-VFBGA (8x14)	封裝: 54-VFBGA	庫存7,280	DRAM	SDRAM	256Mb (16M x 16)	Parallel	133MHz	14ns	5.4ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	54-VFBGA	54-VFBGA (8x14)
AT24C08AY1-10YI-2.7	Microchip Technology	IC EEPROM 8KBIT 400KHZ 8MAP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kb (1K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 4.5µs Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UDFN Exposed Pad Supplier Device Package: 8-MAP (3x4.9)	封裝: 8-UDFN Exposed Pad	庫存3,680	EEPROM	EEPROM	8Kb (1K x 8)	I2C	400kHz	5ms	4.5µs	2.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-UDFN Exposed Pad	8-MAP (3x4.9)
AT24C164-10SI-2.5	Microchip Technology	IC EEPROM 16KBIT 1MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 10ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存2,400	EEPROM	EEPROM	16Kb (2K x 8)	I2C	400kHz	10ms	900ns	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
70V3579S4DR	IDT, Integrated Device Technology Inc	IC SRAM 1.125MBIT 4.2NS 208QFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 1.125Mb (32K x 36) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 4.2ns Voltage - Supply: 3.15 V ~ 3.45 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 208-BFQFP Supplier Device Package: 208-PQFP (28x28)	封裝: 208-BFQFP	庫存5,472	SRAM	SRAM - Dual Port, Synchronous	1.125Mb (32K x 36)	Parallel	-	-	4.2ns	3.15 V ~ 3.45 V	0°C ~ 70°C (TA)	Surface Mount	208-BFQFP	208-PQFP (28x28)
70V38L15PF	IDT, Integrated Device Technology Inc	IC SRAM 1.125MBIT 15NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 1.125Mb (64K x 18) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 15ns Access Time: 15ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封裝: 100-LQFP	庫存3,600	SRAM	SRAM - Dual Port, Asynchronous	1.125Mb (64K x 18)	Parallel	-	15ns	15ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
7164S55DB	IDT, Integrated Device Technology Inc	IC SRAM 64KBIT 55NS 28CDIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 64Kb (8K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 28-CDIP (0.600", 15.24mm) Supplier Device Package: 28-CerDip	封裝: 28-CDIP (0.600", 15.24mm)	庫存6,672	SRAM	SRAM - Asynchronous	64Kb (8K x 8)	Parallel	-	55ns	55ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	28-CDIP (0.600", 15.24mm)	28-CerDip
CY7C024E-55AXC	Cypress Semiconductor Corp	IC SRAM 64KBIT 55NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 64Kb (4K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封裝: 100-LQFP	庫存4,480	SRAM	SRAM - Dual Port, Asynchronous	64Kb (4K x 16)	Parallel	-	55ns	55ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
EDB8164B4PT-1DIT-F-D	Micron Technology Inc.	IC SDRAM 8GBIT 533MHZ 216FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 8Gb (128M x 64) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 216-WFBGA Supplier Device Package: 216-FBGA (12x12)	封裝: 216-WFBGA	庫存4,880	DRAM	SDRAM - Mobile LPDDR2	8Gb (128M x 64)	Parallel	533MHz	-	-	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	Surface Mount	216-WFBGA	216-FBGA (12x12)
IS45S16160G-7TLA2-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 256MBIT 143MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	封裝: 54-TSOP (0.400", 10.16mm Width)	庫存2,896	DRAM	SDRAM	256Mb (16M x 16)	Parallel	143MHz	-	5.4ns	3 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
MX25L25735EMI-12G	Macronix	IC FLASH 256MBIT 80MHZ 16SOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8) Memory Interface: SPI Clock Frequency: 80MHz Write Cycle Time - Word, Page: 300µs, 5ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOP	封裝: 16-SOIC (0.295", 7.50mm Width)	庫存14,052	FLASH	FLASH - NOR	256Mb (32M x 8)	SPI	80MHz	300µs, 5ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOP
25AA160T/SN	Microchip Technology	IC EEPROM 16KBIT 1MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: SPI Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存5,136	EEPROM	EEPROM	16Kb (2K x 8)	SPI	1MHz	5ms	-	1.8 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
S26KS256SDABHM030	Cypress Semiconductor Corp	FLASH MEMORY NOR Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8) Memory Interface: Parallel Clock Frequency: 100MHz Write Cycle Time - Word, Page: - Access Time: 96ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-FBGA (6x8)	封裝: 24-VBGA	庫存7,232	FLASH	FLASH - NOR	256Mb (32M x 8)	Parallel	100MHz	-	96ns	1.7 V ~ 1.95 V	-40°C ~ 125°C (TA)	Surface Mount	24-VBGA	24-FBGA (6x8)
CY7C1911KV18-300BZC	Cypress Semiconductor Corp	IC SRAM 18MBIT 300MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II Memory Size: 18Mb (2M x 9) Memory Interface: Parallel Clock Frequency: 300MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	封裝: 165-LBGA	庫存12,972	SRAM	SRAM - Synchronous, QDR II	18Mb (2M x 9)	Parallel	300MHz	-	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
S25FL128LAGMFI000	Cypress Semiconductor Corp	IC FLASH 128M SPI 133MHZ 16SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	封裝: 16-SOIC (0.295", 7.50mm Width)	庫存27,912	FLASH	FLASH - NOR	128Mb (16M x 8)	SPI - Quad I/O, QPI	133MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
S25FL128LAGBHM023	Cypress Semiconductor Corp	IC 128M FLASH MEMORY Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-BGA (8x6)	封裝: 24-TBGA	庫存2,304	FLASH	FLASH - NOR	128Mb (16M x 8)	SPI - Quad I/O, QPI	133MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 125°C (TA)	Surface Mount	24-TBGA	24-BGA (8x6)
793.846-00	Cypress Semiconductor Corp	IC FLASH NOR Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存3,808	-	-	-	-	-	-	-	-	-	-	-	-
AS4C128M8D3LB-12BIN	Alliance Memory, Inc.	IC DRAM 1G PARALLEL 78FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-VFBGA Supplier Device Package: 78-FBGA (10.5x8)	封裝: 78-VFBGA	庫存7,712	DRAM	SDRAM - DDR3L	1Gb (128M x 8)	Parallel	800MHz	15ns	20ns	1.283 V ~ 1.45 V	-40°C ~ 95°C (TC)	Surface Mount	78-VFBGA	78-FBGA (10.5x8)
S29GL064N90TAI010	Cypress Semiconductor Corp	IC MEMORY NOR Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存4,064	-	-	-	-	-	-	-	-	-	-	-	-
MT62F768M64D4EJ-031-AUT-A	Micron Technology Inc.	LPDDR5 48G 768MX64 FBGA QDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
THGJFGT2T85BAIU	Kioxia America, Inc.	512GB UFS V3.1 Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Tbit Memory Interface: UFS 3.1 Clock Frequency: 1.16 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.4V ~ 3.6V Operating Temperature: -25°C ~ 85°C Mounting Type: Surface Mount Package / Case: 153-VFBGA Supplier Device Package: 153-BGA (11.5x13)	封裝: -	庫存231	FLASH	FLASH - NAND	4Tbit	UFS 3.1	1.16 GHz	-	-	2.4V ~ 3.6V	-25°C ~ 85°C	Surface Mount	153-VFBGA	153-BGA (11.5x13)
MT62F4D1DEK-DC	Micron Technology Inc.	LPDDR5 Y42M Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
NV24C16SNVLT3G	onsemi	IC EEPROM 16KBIT I2C 5TSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kbit Memory Interface: I2C Clock Frequency: 400 kHz Write Cycle Time - Word, Page: 4ms Access Time: 900 ns Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: SOT-23-5 Thin, TSOT-23-5 Supplier Device Package: 5-TSOP	封裝: -	庫存8,058	EEPROM	EEPROM	16Kbit	I2C	400 kHz	4ms	900 ns	2.5V ~ 5.5V	-40°C ~ 125°C (TA)	Surface Mount	SOT-23-5 Thin, TSOT-23-5	5-TSOP
S29GL512P11FFI012	Cypress Semiconductor Corp	IC FLASH 512MBIT PARALLEL 64FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 110ns Access Time: 110 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (11x13)	封裝: -	Request a Quote	FLASH	FLASH - NOR	512Mbit	Parallel	-	110ns	110 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-FBGA (11x13)
CY62177G30-55ZXIT	Infineon Technologies	IC SRAM 32MBIT PARALLEL 48TSOP I Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 32Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55 ns Voltage - Supply: 2.2V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	封裝: -	Request a Quote	SRAM	SRAM - Asynchronous	32Mbit	Parallel	-	55ns	55 ns	2.2V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I

PC28F512P30BF0

Micron Technology Inc.

IC FLASH 512MBIT 100NS 64EASYBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 52MHz
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-TBGA
Supplier Device Package: 64-EasyBGA (8x10)

封裝: 64-TBGA

庫存4,640

FLASH

FLASH - NOR

512Mb (32M x 16)

Parallel

52MHz

100ns

1.7 V ~ 2 V

-40°C ~ 85°C (TA)

Surface Mount

64-TBGA

64-EasyBGA (8x10)

7052L20PQF

IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 20NS 132QFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Quad Port, Asynchronous
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 132-BQFP Bumpered
Supplier Device Package: 132-PQFP (24.13x24.13)

封裝: 132-BQFP Bumpered

庫存3,824

SRAM

SRAM - Quad Port, Asynchronous

16Kb (2K x 8)

Parallel

-

20ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

132-BQFP Bumpered

132-PQFP (24.13x24.13)

S-93L66AR0I-J8T1G

SII Semiconductor Corporation

IC EEPROM 4KBIT 2MHZ 8SOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (256 x 16)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 8ms
Access Time: -
Voltage - Supply: 1.6 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存7,968

EEPROM

4Kb (256 x 16)

SPI

2MHz

8ms

-

1.6 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

IS41LV16100B-60KL

ISSI, Integrated Silicon Solution Inc

IC DRAM 16MBIT 60NS 42SOJ

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM - EDO
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 30ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 42-BSOJ (0.400", 10.16mm)
Supplier Device Package: 42-SOJ

封裝: 42-BSOJ (0.400", 10.16mm)

庫存5,248

DRAM

DRAM - EDO

16Mb (1M x 16)

Parallel

-

30ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

42-BSOJ (0.400", 10.16mm)

42-SOJ

MT48LC16M16A2BG-7E:D TR

Micron Technology Inc.

IC SDRAM 256MBIT 133MHZ 54VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 14ns
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-VFBGA
Supplier Device Package: 54-VFBGA (8x14)

封裝: 54-VFBGA

庫存7,280

DRAM

SDRAM

256Mb (16M x 16)

Parallel

133MHz

14ns

5.4ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

54-VFBGA

54-VFBGA (8x14)

AT24C08AY1-10YI-2.7

Microchip Technology

IC EEPROM 8KBIT 400KHZ 8MAP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kb (1K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 4.5µs
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UDFN Exposed Pad
Supplier Device Package: 8-MAP (3x4.9)

封裝: 8-UDFN Exposed Pad

庫存3,680

EEPROM

8Kb (1K x 8)

I2C

400kHz

5ms

4.5µs

2.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-UDFN Exposed Pad

8-MAP (3x4.9)

AT24C164-10SI-2.5

Microchip Technology

IC EEPROM 16KBIT 1MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 10ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存2,400

EEPROM

16Kb (2K x 8)

I2C

400kHz

10ms

900ns

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

70V3579S4DR

IDT, Integrated Device Technology Inc

IC SRAM 1.125MBIT 4.2NS 208QFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 1.125Mb (32K x 36)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 4.2ns
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 208-BFQFP
Supplier Device Package: 208-PQFP (28x28)

封裝: 208-BFQFP

庫存5,472

SRAM

SRAM - Dual Port, Synchronous

1.125Mb (32K x 36)

Parallel

-

4.2ns

3.15 V ~ 3.45 V

0°C ~ 70°C (TA)

Surface Mount

208-BFQFP

208-PQFP (28x28)

70V38L15PF

IDT, Integrated Device Technology Inc

IC SRAM 1.125MBIT 15NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 1.125Mb (64K x 18)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封裝: 100-LQFP

庫存3,600

SRAM

SRAM - Dual Port, Asynchronous

1.125Mb (64K x 18)

Parallel

-

15ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

7164S55DB

IDT, Integrated Device Technology Inc

IC SRAM 64KBIT 55NS 28CDIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 64Kb (8K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 28-CDIP (0.600", 15.24mm)
Supplier Device Package: 28-CerDip

封裝: 28-CDIP (0.600", 15.24mm)

庫存6,672

SRAM

SRAM - Asynchronous

64Kb (8K x 8)

Parallel

-

55ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

28-CDIP (0.600", 15.24mm)

28-CerDip

CY7C024E-55AXC

Cypress Semiconductor Corp

IC SRAM 64KBIT 55NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 64Kb (4K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封裝: 100-LQFP

庫存4,480

SRAM

SRAM - Dual Port, Asynchronous

64Kb (4K x 16)

Parallel

-

55ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

EDB8164B4PT-1DIT-F-D

Micron Technology Inc.

IC SDRAM 8GBIT 533MHZ 216FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 8Gb (128M x 64)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 216-WFBGA
Supplier Device Package: 216-FBGA (12x12)

封裝: 216-WFBGA

庫存4,880

DRAM

SDRAM - Mobile LPDDR2

8Gb (128M x 64)

Parallel

533MHz

-

1.14 V ~ 1.95 V

-40°C ~ 85°C (TC)

Surface Mount

216-WFBGA

216-FBGA (12x12)

IS45S16160G-7TLA2-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 143MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

封裝: 54-TSOP (0.400", 10.16mm Width)

庫存2,896

DRAM

SDRAM

256Mb (16M x 16)

Parallel

143MHz

-

5.4ns

3 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

MX25L25735EMI-12G

Macronix

IC FLASH 256MBIT 80MHZ 16SOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8)
Memory Interface: SPI
Clock Frequency: 80MHz
Write Cycle Time - Word, Page: 300µs, 5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOP

封裝: 16-SOIC (0.295", 7.50mm Width)

庫存14,052

FLASH

FLASH - NOR

256Mb (32M x 8)

SPI

80MHz

300µs, 5ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOP

25AA160T/SN

Microchip Technology

IC EEPROM 16KBIT 1MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: SPI
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存5,136

EEPROM

16Kb (2K x 8)

SPI

1MHz

5ms

-

1.8 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

S26KS256SDABHM030

Cypress Semiconductor Corp

FLASH MEMORY NOR

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8)
Memory Interface: Parallel
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: -
Access Time: 96ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-FBGA (6x8)

封裝: 24-VBGA

庫存7,232

FLASH

FLASH - NOR

256Mb (32M x 8)

Parallel

100MHz

-

96ns

1.7 V ~ 1.95 V

-40°C ~ 125°C (TA)

Surface Mount

24-VBGA

24-FBGA (6x8)

CY7C1911KV18-300BZC

Cypress Semiconductor Corp

IC SRAM 18MBIT 300MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 18Mb (2M x 9)
Memory Interface: Parallel
Clock Frequency: 300MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

封裝: 165-LBGA

庫存12,972

SRAM

SRAM - Synchronous, QDR II

18Mb (2M x 9)

Parallel

300MHz

-

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

S25FL128LAGMFI000

Cypress Semiconductor Corp

IC FLASH 128M SPI 133MHZ 16SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

封裝: 16-SOIC (0.295", 7.50mm Width)

庫存27,912

FLASH

FLASH - NOR

128Mb (16M x 8)

SPI - Quad I/O, QPI

133MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

S25FL128LAGBHM023

Cypress Semiconductor Corp

IC 128M FLASH MEMORY

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-BGA (8x6)

封裝: 24-TBGA

庫存2,304

FLASH

FLASH - NOR

128Mb (16M x 8)

SPI - Quad I/O, QPI

133MHz

-

2.7 V ~ 3.6 V

-40°C ~ 125°C (TA)

Surface Mount

24-TBGA

24-BGA (8x6)

793.846-00

Cypress Semiconductor Corp

IC FLASH NOR

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存3,808

-

AS4C128M8D3LB-12BIN

Alliance Memory, Inc.

IC DRAM 1G PARALLEL 78FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-VFBGA
Supplier Device Package: 78-FBGA (10.5x8)

封裝: 78-VFBGA

庫存7,712

DRAM

SDRAM - DDR3L

1Gb (128M x 8)

Parallel

800MHz

15ns

20ns

1.283 V ~ 1.45 V

-40°C ~ 95°C (TC)

Surface Mount

78-VFBGA

78-FBGA (10.5x8)

S29GL064N90TAI010

Cypress Semiconductor Corp

IC MEMORY NOR

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存4,064

-

MT62F768M64D4EJ-031-AUT-A

Micron Technology Inc.

LPDDR5 48G 768MX64 FBGA QDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

THGJFGT2T85BAIU

Kioxia America, Inc.

512GB UFS V3.1

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Tbit
Memory Interface: UFS 3.1
Clock Frequency: 1.16 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.4V ~ 3.6V
Operating Temperature: -25°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 153-VFBGA
Supplier Device Package: 153-BGA (11.5x13)

封裝: -

庫存231

FLASH

FLASH - NAND

4Tbit

UFS 3.1

1.16 GHz

-

2.4V ~ 3.6V

-25°C ~ 85°C

Surface Mount

153-VFBGA

153-BGA (11.5x13)

MT62F4D1DEK-DC

Micron Technology Inc.

LPDDR5 Y42M

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

NV24C16SNVLT3G

onsemi

IC EEPROM 16KBIT I2C 5TSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kbit
Memory Interface: I2C
Clock Frequency: 400 kHz
Write Cycle Time - Word, Page: 4ms
Access Time: 900 ns
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Supplier Device Package: 5-TSOP

封裝: -

庫存8,058

EEPROM

16Kbit

I2C

400 kHz

4ms

900 ns

2.5V ~ 5.5V

-40°C ~ 125°C (TA)

Surface Mount

SOT-23-5 Thin, TSOT-23-5

5-TSOP

S29GL512P11FFI012

Cypress Semiconductor Corp

IC FLASH 512MBIT PARALLEL 64FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 110ns
Access Time: 110 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (11x13)

封裝: -

Request a Quote

FLASH

FLASH - NOR

512Mbit

Parallel

-

110ns

110 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-FBGA (11x13)

CY62177G30-55ZXIT

Infineon Technologies

IC SRAM 32MBIT PARALLEL 48TSOP I

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 32Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55 ns
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

封裝: -

Request a Quote

SRAM

SRAM - Asynchronous

32Mbit

Parallel

-

55ns

55 ns

2.2V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I