頁 511 - 記憶體 | 積體電路 (IC) | 黑森爾電子
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記憶體

記錄 62,144
頁  511/2,220
圖片
零件編號
製造商
描述
封裝
庫存
數量
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MT29F64G08CECDBJ4-10:D TR
Micron Technology Inc.

IC FLASH 64GBIT 100MHZ 132VBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 64Gb (8G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存5,648
FLASH
FLASH - NAND
64Gb (8G x 8)
Parallel
100MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
93LC86A-I/ST
Microchip Technology

IC EEPROM 16KBIT 3MHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 3MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
封裝: 8-TSSOP (0.173", 4.40mm Width)
庫存2,480
EEPROM
EEPROM
16Kb (2K x 8)
SPI
3MHz
5ms
-
2.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
70P3519S166BCGI8
IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 166MHZ 256CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous
  • Memory Size: 9Mb (256K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.6ns
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-LBGA
  • Supplier Device Package: 256-CABGA (17x17)
封裝: 256-LBGA
庫存5,760
SRAM
SRAM - Dual Port, Synchronous
9Mb (256K x 36)
Parallel
166MHz
-
3.6ns
1.7 V ~ 1.9 V
-40°C ~ 85°C (TA)
Surface Mount
256-LBGA
256-CABGA (17x17)
DS1330YL-100
Maxim Integrated

IC NVSRAM 256KBIT 100NS 34LPM

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 34-LPM
  • Supplier Device Package: 34-LPM
封裝: 34-LPM
庫存4,848
NVSRAM
NVSRAM (Non-Volatile SRAM)
256Kb (32K x 8)
Parallel
-
100ns
100ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
34-LPM
34-LPM
AT27C040-70JI
Microchip Technology

IC OTP 4MBIT 70NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 70ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
封裝: 32-LCC (J-Lead)
庫存2,512
EPROM
EPROM - OTP
4Mb (512K x 8)
Parallel
-
-
70ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC
AT24C64W-10SC-2.7
Microchip Technology

IC EEPROM 64KBIT 400KHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 900ns
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOIC
封裝: 8-SOIC (0.209", 5.30mm Width)
庫存5,680
EEPROM
EEPROM
64Kb (8K x 8)
I2C
400kHz
10ms
900ns
2.7 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOIC
709379L12PF
IDT, Integrated Device Technology Inc

IC SRAM 576KBIT 12NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous
  • Memory Size: 576Kb (32K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 12ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
封裝: 100-LQFP
庫存6,816
SRAM
SRAM - Dual Port, Synchronous
576Kb (32K x 18)
Parallel
-
-
12ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
7005L55JI8
IDT, Integrated Device Technology Inc

IC SRAM 64KBIT 55NS 68PLCC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 68-LCC (J-Lead)
  • Supplier Device Package: 68-PLCC (24.21x24.21)
封裝: 68-LCC (J-Lead)
庫存5,584
SRAM
SRAM - Dual Port, Asynchronous
64Kb (8K x 8)
Parallel
-
55ns
55ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
68-LCC (J-Lead)
68-PLCC (24.21x24.21)
IS61LPS12836A-200TQI-TR
ISSI, Integrated Silicon Solution Inc

IC SRAM 4.5MBIT 200MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 4.5Mb (128K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.1ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20)
封裝: 100-LQFP
庫存4,608
SRAM
SRAM - Synchronous
4.5Mb (128K x 36)
Parallel
200MHz
-
3.1ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20)
IS42RM16800H-75BLI-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 133MHZ 54BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile
  • Memory Size: 128Mb (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 6ns
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TFBGA
  • Supplier Device Package: 54-TFBGA (8x8)
封裝: 54-TFBGA
庫存3,776
DRAM
SDRAM - Mobile
128Mb (8M x 16)
Parallel
133MHz
-
6ns
2.3 V ~ 2.7 V
-40°C ~ 85°C (TA)
Surface Mount
54-TFBGA
54-TFBGA (8x8)
S25FL164K0XNFA010
Cypress Semiconductor Corp

IC FLASH NOR 8WSON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mb (8M x 8)
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 108MHz
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (5x6)
封裝: 8-WDFN Exposed Pad
庫存6,400
FLASH
FLASH - NOR
64Mb (8M x 8)
SPI - Quad I/O
108MHz
3ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (5x6)
S25FL132K0XBHB023
Cypress Semiconductor Corp

IC FLASH NOR 24FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 32Mb (4M x 8)
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 108MHz
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存6,464
FLASH
FLASH - NOR
32Mb (4M x 8)
SPI - Quad I/O
108MHz
3ms
-
2.7 V ~ 3.6 V
-40°C ~ 105°C (TA)
-
-
-
24VL024T/MS
Microchip Technology

IC EEPROM 2KBIT 400KHZ 8MSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 1.5 V ~ 3.6 V
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 8-MSOP
封裝: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
庫存2,000
EEPROM
EEPROM
2Kb (256 x 8)
I2C
400kHz
5ms
900ns
1.5 V ~ 3.6 V
-20°C ~ 85°C (TA)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
8-MSOP
M95160-RDW6TP
STMicroelectronics

IC EEPROM 16KBIT 5MHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 10MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
封裝: 8-TSSOP (0.173", 4.40mm Width)
庫存5,520
EEPROM
EEPROM
16Kb (2K x 8)
SPI
10MHz
5ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
CY7C1670KV18-450BZXC
Cypress Semiconductor Corp

IC SRAM 144MBIT 450MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, DDR II+
  • Memory Size: 144Mb (4M x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 450MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (15x17)
封裝: 165-LBGA
庫存7,248
SRAM
SRAM - Synchronous, DDR II+
144Mb (4M x 36)
Parallel
450MHz
-
-
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-FBGA (15x17)
hot MX25U4035ZNI-25G
Macronix

IC FLASH 4MBIT 40MHZ 8WSON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 40MHz
  • Write Cycle Time - Word, Page: 300µs, 7ms
  • Access Time: -
  • Voltage - Supply: 1.65 V ~ 2 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (6x5)
封裝: 8-WDFN Exposed Pad
庫存117,228
FLASH
FLASH - NOR
4Mb (512K x 8)
SPI
40MHz
300µs, 7ms
-
1.65 V ~ 2 V
-40°C ~ 85°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (6x5)
hot 93LC66C-I/SN
Microchip Technology

IC EEPROM 4KBIT 3MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (512 x 8, 256 x 16)
  • Memory Interface: SPI
  • Clock Frequency: 3MHz
  • Write Cycle Time - Word, Page: 6ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存8,928
EEPROM
EEPROM
4Kb (512 x 8, 256 x 16)
SPI
3MHz
6ms
-
2.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
DS1245AB-70+
Maxim Integrated

IC NVSRAM 1MBIT 70NS 32EDIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 32-DIP Module (0.600", 15.24mm)
  • Supplier Device Package: 32-EDIP
封裝: 32-DIP Module (0.600", 15.24mm)
庫存8,724
NVSRAM
NVSRAM (Non-Volatile SRAM)
1Mb (128K x 8)
Parallel
-
70ns
70ns
4.75 V ~ 5.25 V
0°C ~ 70°C (TA)
Through Hole
32-DIP Module (0.600", 15.24mm)
32-EDIP
AS4C64M16MD1A-5BINTR
Alliance Memory, Inc.

IC DRAM 1G PARALLEL 60FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR
  • Memory Size: 1Gb (64M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-VFBGA
  • Supplier Device Package: 60-FBGA (9x8)
封裝: 60-VFBGA
庫存2,480
DRAM
SDRAM - Mobile LPDDR
1Gb (64M x 16)
Parallel
200MHz
15ns
5ns
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
60-VFBGA
60-FBGA (9x8)
S98WS512P00AW0013
Cypress Semiconductor Corp

IC GATE NOR

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存7,792
-
-
-
-
-
-
-
-
-
-
-
-
MT25QL128ABB1EW7-CSIT
Micron Technology Inc.

IC FLASH 128M SPI 133MHZ 8WPDFN

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (16M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 8ms, 2.8ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WPDFN (6x5)(MLP8)
封裝: 8-WDFN Exposed Pad
庫存4,944
FLASH
FLASH - NOR
128Mb (16M x 8)
SPI
133MHz
8ms, 2.8ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WPDFN (6x5)(MLP8)
hot MT53B256M64D2NL-062 XT:B
Micron Technology Inc.

IC DRAM 16G 1600MHZ FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 16Gb (256M x 64)
  • Memory Interface: -
  • Clock Frequency: 1600MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -30°C ~ 105°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存245,160
DRAM
SDRAM - Mobile LPDDR4
16Gb (256M x 64)
-
1600MHz
-
-
1.1V
-30°C ~ 105°C (TC)
-
-
-
S29GL064N11TAIV20
Cypress Semiconductor Corp

IC MEMORY NOR

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存3,200
-
-
-
-
-
-
-
-
-
-
-
-
AT25SF128A-SHBHD-T
Renesas Electronics Corporation

IC FLASH 128MBIT SPI/QUAD 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 50µs, 2.4ms
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOIC
封裝: -
庫存6,000
FLASH
FLASH - NOR
128Mbit
SPI - Quad I/O
133 MHz
50µs, 2.4ms
-
2.7V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOIC
IS46TR16640ED-15HBLA3-TR
ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +125C), 1

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 1Gbit
  • Memory Interface: SSTL_15
  • Clock Frequency: 667 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.425V ~ 1.575V
  • Operating Temperature: -40°C ~ 125°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (9x13)
封裝: -
Request a Quote
DRAM
SDRAM - DDR3
1Gbit
SSTL_15
667 MHz
15ns
20 ns
1.425V ~ 1.575V
-40°C ~ 125°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (9x13)
MX25U16356ZUI02
Macronix

MEMORY

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-UFDFN Exposed Pad
  • Supplier Device Package: 8-USON (2x3)
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
Surface Mount
8-UFDFN Exposed Pad
8-USON (2x3)
GD25LD10CEIGR
GigaDevice Semiconductor (HK) Limited

IC FLSH 1MBIT SPI/DUAL I/O 8USON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 1Mbit
  • Memory Interface: SPI - Dual I/O
  • Clock Frequency: 50 MHz
  • Write Cycle Time - Word, Page: 55µs, 6ms
  • Access Time: -
  • Voltage - Supply: 1.65V ~ 2V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-XFDFN Exposed Pad
  • Supplier Device Package: 8-USON (2x3)
封裝: -
Request a Quote
FLASH
FLASH - NOR
1Mbit
SPI - Dual I/O
50 MHz
55µs, 6ms
-
1.65V ~ 2V
-40°C ~ 85°C (TA)
Surface Mount
8-XFDFN Exposed Pad
8-USON (2x3)
W25N02KWTCIR-TR
Winbond Electronics

2G-BIT SERIAL NAND FLASH, 1.8V

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 2Gbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 104 MHz
  • Write Cycle Time - Word, Page: 700µs
  • Access Time: 8 ns
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-TFBGA (8x6)
封裝: -
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FLASH
FLASH - NAND (SLC)
2Gbit
SPI - Quad I/O
104 MHz
700µs
8 ns
1.7V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
24-TBGA
24-TFBGA (8x6)