頁 489 - 記憶體 | 積體電路 (IC)

零件編號	製造商	描述	封裝	庫存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT41K256M16V80AWC1	Micron Technology Inc.	IC DDR3 SDRAM 4GBIT DIE Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存4,608	-	-	-	-	-	-	-	-	-	-	-	-
IS42S32200E-7TL-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 64MBIT 143MHZ 86TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 64Mb (2M x 32) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.5ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 86-TFSOP (0.400", 10.16mm Width) Supplier Device Package: 86-TSOP II	封裝: 86-TFSOP (0.400", 10.16mm Width)	庫存7,216	DRAM	SDRAM	64Mb (2M x 32)	Parallel	143MHz	-	5.5ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	86-TFSOP (0.400", 10.16mm Width)	86-TSOP II
MT42L32M32D2AC-25 AIT:A	Micron Technology Inc.	IC SDRAM 1GBIT 400MHZ 134FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 1Gb (32M x 32) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -25°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 134-VFBGA Supplier Device Package: 134-FBGA (10x11.5)	封裝: 134-VFBGA	庫存4,272	DRAM	SDRAM - Mobile LPDDR2	1Gb (32M x 32)	Parallel	400MHz	-	-	1.14 V ~ 1.95 V	-25°C ~ 85°C (TC)	Surface Mount	134-VFBGA	134-FBGA (10x11.5)
AT25512-TH-B	Microchip Technology	IC EEPROM 512KBIT 20MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 512Kb (64K x 8) Memory Interface: SPI Clock Frequency: 20MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封裝: 8-TSSOP (0.173", 4.40mm Width)	庫存5,248	EEPROM	EEPROM	512Kb (64K x 8)	SPI	20MHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
PC28F320J3D75B TR	Micron Technology Inc.	IC FLASH 32MBIT 75NS 64EASYBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (4M x 8, 2M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 75ns Access Time: 75ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-TBGA Supplier Device Package: 64-EasyBGA (10x13)	封裝: 64-TBGA	庫存5,328	FLASH	FLASH - NOR	32Mb (4M x 8, 2M x 16)	Parallel	-	75ns	75ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-TBGA	64-EasyBGA (10x13)
AT49BV8192AT-11TC	Microchip Technology	IC FLASH 8MBIT 110NS 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 8Mb (1M x 8, 512K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 30µs Access Time: 110ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP	封裝: 48-TFSOP (0.724", 18.40mm Width)	庫存4,176	FLASH	FLASH	8Mb (1M x 8, 512K x 16)	Parallel	-	30µs	110ns	2.7 V ~ 3.6 V	0°C ~ 70°C (TC)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP
AT29C512-20JC	Microchip Technology	IC FLASH 512KBIT 200NS 32PLCC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 512Kb (64K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ms Access Time: 200ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	封裝: 32-LCC (J-Lead)	庫存6,032	FLASH	FLASH	512Kb (64K x 8)	Parallel	-	10ms	200ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Surface Mount	32-LCC (J-Lead)	32-PLCC
AT27C256R-45JI	Microchip Technology	IC OTP 256KBIT 45NS 32PLCC Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 45ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	封裝: 32-LCC (J-Lead)	庫存4,880	EPROM	EPROM - OTP	256Kb (32K x 8)	Parallel	-	-	45ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	32-LCC (J-Lead)	32-PLCC
93LC66BT/ST	Microchip Technology	IC EEPROM 4KBIT 2MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (256 x 16) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 6ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封裝: 8-TSSOP (0.173", 4.40mm Width)	庫存27,120	EEPROM	EEPROM	4Kb (256 x 16)	SPI	2MHz	6ms	-	2.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
7143LA35FB	IDT, Integrated Device Technology Inc	IC SRAM 32KBIT 35NS 68FPACK Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 32Kb (2K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 68-Flatpack Supplier Device Package: 68-FPACK	封裝: 68-Flatpack	庫存7,696	SRAM	SRAM - Dual Port, Asynchronous	32Kb (2K x 16)	Parallel	-	35ns	35ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Surface Mount	68-Flatpack	68-FPACK
MT53B1024M32D4NQ-062 WT:C TR	Micron Technology Inc.	IC SDRAM 32GBIT 1.6GHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 32Gb (1G x 32) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存5,568	DRAM	SDRAM - Mobile LPDDR4	32Gb (1G x 32)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
R1LV1616RSA-7SI#B0	Renesas Electronics America	IC SRAM 16MBIT 70NS 48TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM Memory Size: 16Mb (2M x 8, 1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TSOP Supplier Device Package: 48-TSOP	封裝: 48-TSOP	庫存7,840	SRAM	SRAM	16Mb (2M x 8, 1M x 16)	Parallel	-	70ns	70ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TSOP	48-TSOP
S70FS01GSDSBHM213	Cypress Semiconductor Corp	NOR Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Gb (128M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 80MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存5,280	FLASH	FLASH - NOR	1Gb (128M x 8)	SPI - Quad I/O	80MHz	-	-	1.7 V ~ 2 V	-40°C ~ 125°C (TA)	-	-	-
71342SA45J8	IDT, Integrated Device Technology Inc	IC SRAM 32KBIT 45NS 52PLCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 32Kb (4K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 52-LCC (J-Lead) Supplier Device Package: 52-PLCC (19.13x19.13)	封裝: 52-LCC (J-Lead)	庫存5,696	SRAM	SRAM - Dual Port, Asynchronous	32Kb (4K x 8)	Parallel	-	45ns	45ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	52-LCC (J-Lead)	52-PLCC (19.13x19.13)
STK15C88-NF45TR	Cypress Semiconductor Corp	IC NVSRAM 256KBIT 45NS 28SOIC Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.295", 7.50mm Width) Supplier Device Package: 28-SOIC	封裝: 28-SOIC (0.295", 7.50mm Width)	庫存7,776	NVSRAM	NVSRAM (Non-Volatile SRAM)	256Kb (32K x 8)	Parallel	-	45ns	45ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	28-SOIC (0.295", 7.50mm Width)	28-SOIC
CY7C1565KV18-500BZXC	Cypress Semiconductor Corp	IC SRAM 72MBIT 500MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II+ Memory Size: 72Mb (2M x 36) Memory Interface: Parallel Clock Frequency: 500MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	封裝: 165-LBGA	庫存3,536	SRAM	SRAM - Synchronous, QDR II+	72Mb (2M x 36)	Parallel	500MHz	-	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
RM25C512C-LMAI-T	Adesto Technologies	IC EEPROM 512KBIT 20MHZ 8DFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 512kb (128B Page Size) Memory Interface: SPI Clock Frequency: 20MHz Write Cycle Time - Word, Page: 100µs, 5ms Access Time: - Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-UDFN (2x3)	封裝: 8-UFDFN Exposed Pad	庫存3,840	EEPROM	EEPROM	512kb (128B Page Size)	SPI	20MHz	100µs, 5ms	-	1.65 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-UFDFN Exposed Pad	8-UDFN (2x3)
AS4C64M16D2A-25BCN	Alliance Memory, Inc.	1G, DDR2, 64M X 16, 1.8V, 96-BAL Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: 400ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 84-TFBGA Supplier Device Package: 84-FBGA (8x12.5)	封裝: 84-TFBGA	庫存7,812	DRAM	SDRAM - DDR2	1Gb (64M x 16)	Parallel	400MHz	15ns	400ps	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	Surface Mount	84-TFBGA	84-FBGA (8x12.5)
S29JL032J60TFI020	Cypress Semiconductor Corp	IC FLASH 32M PARALLEL 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (4M x 8, 2M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 60ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP (18.4x12)	封裝: 48-TFSOP (0.724", 18.40mm Width)	庫存6,016	FLASH	FLASH - NOR	32Mb (4M x 8, 2M x 16)	Parallel	-	60ns	60ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP (18.4x12)
IS42VM32100D-6BLI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 32M PARALLEL 166MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile Memory Size: 32Mb (1M x 32) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 5.5ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	封裝: 90-TFBGA	庫存2,336	DRAM	SDRAM - Mobile	32Mb (1M x 32)	Parallel	166MHz	-	5.5ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
W25Q256FVFJF TR	Winbond Electronics	IC FLASH MEMORY 256MB Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存2,896	-	-	-	-	-	-	-	-	-	-	-	-
MT29F4G08ABAFAWP-AITES:F	Micron Technology Inc.	IC FLASH 4G PARALLEL TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存6,192	FLASH	FLASH - NAND	4Gb (512M x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT40A1G8SA-062E AUT:E	Micron Technology Inc.	IC SDRAM DDR4 8G PAR 78FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 8Gb (1G x 8) Memory Interface: Parallel Clock Frequency: 1.6GHz Write Cycle Time - Word, Page: 15ns Access Time: 19ns Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: -40°C ~ 125°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (7.5x11)	封裝: 78-TFBGA	庫存6,112	DRAM	SDRAM - DDR4	8Gb (1G x 8)	Parallel	1.6GHz	15ns	19ns	1.14V ~ 1.26V	-40°C ~ 125°C (TC)	Surface Mount	78-TFBGA	78-FBGA (7.5x11)
NV24C08MUW3VLTBG	onsemi	IC EEPROM 8KBIT I2C 1MHZ 8UDFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kbit Memory Interface: I2C Clock Frequency: 1 MHz Write Cycle Time - Word, Page: 4ms Access Time: 450 ns Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-UDFN (2x3)	封裝: -	庫存7,959	EEPROM	EEPROM	8Kbit	I2C	1 MHz	4ms	450 ns	1.7V ~ 5.5V	-40°C ~ 125°C (TA)	Surface Mount	8-UFDFN Exposed Pad	8-UDFN (2x3)
GD25WD05CKIGR	GigaDevice Semiconductor (HK) Limited	IC FLASH 512KBIT SPI/DUAL 8USON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 512Kbit Memory Interface: SPI - Dual I/O Clock Frequency: 100 MHz Write Cycle Time - Word, Page: 55µs, 6ms Access Time: 12 ns Voltage - Supply: 1.65V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-XFDFN Exposed Pad Supplier Device Package: 8-USON (1.5x1.5)	封裝: -	Request a Quote	FLASH	FLASH - NOR (SLC)	512Kbit	SPI - Dual I/O	100 MHz	55µs, 6ms	12 ns	1.65V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-XFDFN Exposed Pad	8-USON (1.5x1.5)
NDS73PT9-20AT-TR	Insignis Technology Corporation	SDR 128MB X32 TSOPII 86L 10X22(X Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mbit Memory Interface: LVTTL Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 86-TFSOP (0.400", 10.16mm Width) Supplier Device Package: 86-TSOP II	封裝: -	Request a Quote	DRAM	SDRAM	128Mbit	LVTTL	200 MHz	-	-	3V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	86-TFSOP (0.400", 10.16mm Width)	86-TSOP II
NDS38PT5-16IT-TR	Insignis Technology Corporation	SDR 256MB X8 TSOPII 54L 10X22(X1 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mbit Memory Interface: LVTTL Clock Frequency: 166 MHz Write Cycle Time - Word, Page: 12ns Access Time: 5 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	封裝: -	Request a Quote	DRAM	SDRAM	256Mbit	LVTTL	166 MHz	12ns	5 ns	3V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
CY7C265-25WC	Cypress Semiconductor Corp	IC EPROM 64KBIT PARALLEL Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - UV Memory Size: 64Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 25 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	EPROM	EPROM - UV	64Kbit	Parallel	-	-	25 ns	4.5V ~ 5.5V	0°C ~ 70°C (TA)	-	-	-

MT41K256M16V80AWC1

Micron Technology Inc.

IC DDR3 SDRAM 4GBIT DIE

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存4,608

-

IS42S32200E-7TL-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 64MBIT 143MHZ 86TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mb (2M x 32)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.5ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 86-TFSOP (0.400", 10.16mm Width)
Supplier Device Package: 86-TSOP II

封裝: 86-TFSOP (0.400", 10.16mm Width)

庫存7,216

DRAM

SDRAM

64Mb (2M x 32)

Parallel

143MHz

-

5.5ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

86-TFSOP (0.400", 10.16mm Width)

86-TSOP II

MT42L32M32D2AC-25 AIT:A

Micron Technology Inc.

IC SDRAM 1GBIT 400MHZ 134FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 1Gb (32M x 32)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -25°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-VFBGA
Supplier Device Package: 134-FBGA (10x11.5)

封裝: 134-VFBGA

庫存4,272

DRAM

SDRAM - Mobile LPDDR2

1Gb (32M x 32)

Parallel

400MHz

-

1.14 V ~ 1.95 V

-25°C ~ 85°C (TC)

Surface Mount

134-VFBGA

134-FBGA (10x11.5)

AT25512-TH-B

Microchip Technology

IC EEPROM 512KBIT 20MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 512Kb (64K x 8)
Memory Interface: SPI
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封裝: 8-TSSOP (0.173", 4.40mm Width)

庫存5,248

EEPROM

512Kb (64K x 8)

SPI

20MHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

PC28F320J3D75B TR

Micron Technology Inc.

IC FLASH 32MBIT 75NS 64EASYBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8, 2M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 75ns
Access Time: 75ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-TBGA
Supplier Device Package: 64-EasyBGA (10x13)

封裝: 64-TBGA

庫存5,328

FLASH

FLASH - NOR

32Mb (4M x 8, 2M x 16)

Parallel

-

75ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-TBGA

64-EasyBGA (10x13)

AT49BV8192AT-11TC

Microchip Technology

IC FLASH 8MBIT 110NS 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 8Mb (1M x 8, 512K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 30µs
Access Time: 110ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP

封裝: 48-TFSOP (0.724", 18.40mm Width)

庫存4,176

FLASH

8Mb (1M x 8, 512K x 16)

Parallel

-

30µs

110ns

2.7 V ~ 3.6 V

0°C ~ 70°C (TC)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP

AT29C512-20JC

Microchip Technology

IC FLASH 512KBIT 200NS 32PLCC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 512Kb (64K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ms
Access Time: 200ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

封裝: 32-LCC (J-Lead)

庫存6,032

FLASH

512Kb (64K x 8)

Parallel

-

10ms

200ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Surface Mount

32-LCC (J-Lead)

32-PLCC

AT27C256R-45JI

Microchip Technology

IC OTP 256KBIT 45NS 32PLCC

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 45ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

封裝: 32-LCC (J-Lead)

庫存4,880

EPROM

EPROM - OTP

256Kb (32K x 8)

Parallel

-

45ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

32-LCC (J-Lead)

32-PLCC

93LC66BT/ST

Microchip Technology

IC EEPROM 4KBIT 2MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (256 x 16)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 6ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封裝: 8-TSSOP (0.173", 4.40mm Width)

庫存27,120

EEPROM

4Kb (256 x 16)

SPI

2MHz

6ms

-

2.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

7143LA35FB

IDT, Integrated Device Technology Inc

IC SRAM 32KBIT 35NS 68FPACK

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 32Kb (2K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 68-Flatpack
Supplier Device Package: 68-FPACK

封裝: 68-Flatpack

庫存7,696

SRAM

SRAM - Dual Port, Asynchronous

32Kb (2K x 16)

Parallel

-

35ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Surface Mount

68-Flatpack

68-FPACK

MT53B1024M32D4NQ-062 WT:C TR

Micron Technology Inc.

IC SDRAM 32GBIT 1.6GHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gb (1G x 32)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存5,568

DRAM

SDRAM - Mobile LPDDR4

32Gb (1G x 32)

-

1600MHz

-

1.1V

-30°C ~ 85°C (TC)

-

R1LV1616RSA-7SI#B0

Renesas Electronics America

IC SRAM 16MBIT 70NS 48TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 16Mb (2M x 8, 1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TSOP
Supplier Device Package: 48-TSOP

封裝: 48-TSOP

庫存7,840

SRAM

16Mb (2M x 8, 1M x 16)

Parallel

-

70ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TSOP

S70FS01GSDSBHM213

Cypress Semiconductor Corp

NOR

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gb (128M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 80MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存5,280

FLASH

FLASH - NOR

1Gb (128M x 8)

SPI - Quad I/O

80MHz

-

1.7 V ~ 2 V

-40°C ~ 125°C (TA)

-

71342SA45J8

IDT, Integrated Device Technology Inc

IC SRAM 32KBIT 45NS 52PLCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 32Kb (4K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 52-LCC (J-Lead)
Supplier Device Package: 52-PLCC (19.13x19.13)

封裝: 52-LCC (J-Lead)

庫存5,696

SRAM

SRAM - Dual Port, Asynchronous

32Kb (4K x 8)

Parallel

-

45ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

52-LCC (J-Lead)

52-PLCC (19.13x19.13)

STK15C88-NF45TR

Cypress Semiconductor Corp

IC NVSRAM 256KBIT 45NS 28SOIC

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 28-SOIC

封裝: 28-SOIC (0.295", 7.50mm Width)

庫存7,776

NVSRAM

NVSRAM (Non-Volatile SRAM)

256Kb (32K x 8)

Parallel

-

45ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

28-SOIC (0.295", 7.50mm Width)

28-SOIC

CY7C1565KV18-500BZXC

Cypress Semiconductor Corp

IC SRAM 72MBIT 500MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II+
Memory Size: 72Mb (2M x 36)
Memory Interface: Parallel
Clock Frequency: 500MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

封裝: 165-LBGA

庫存3,536

SRAM

SRAM - Synchronous, QDR II+

72Mb (2M x 36)

Parallel

500MHz

-

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

RM25C512C-LMAI-T

Adesto Technologies

IC EEPROM 512KBIT 20MHZ 8DFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 512kb (128B Page Size)
Memory Interface: SPI
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 100µs, 5ms
Access Time: -
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-UDFN (2x3)

封裝: 8-UFDFN Exposed Pad

庫存3,840

EEPROM

512kb (128B Page Size)

SPI

20MHz

100µs, 5ms

-

1.65 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-UFDFN Exposed Pad

8-UDFN (2x3)

AS4C64M16D2A-25BCN

Alliance Memory, Inc.

1G, DDR2, 64M X 16, 1.8V, 96-BAL

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-FBGA (8x12.5)

封裝: 84-TFBGA

庫存7,812

DRAM

SDRAM - DDR2

1Gb (64M x 16)

Parallel

400MHz

15ns

400ps

1.7 V ~ 1.9 V

0°C ~ 85°C (TC)

Surface Mount

84-TFBGA

84-FBGA (8x12.5)

S29JL032J60TFI020

Cypress Semiconductor Corp

IC FLASH 32M PARALLEL 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8, 2M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 60ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP (18.4x12)

封裝: 48-TFSOP (0.724", 18.40mm Width)

庫存6,016

FLASH

FLASH - NOR

32Mb (4M x 8, 2M x 16)

Parallel

-

60ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP (18.4x12)

IS42VM32100D-6BLI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 32M PARALLEL 166MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile
Memory Size: 32Mb (1M x 32)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 5.5ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

封裝: 90-TFBGA

庫存2,336

DRAM

SDRAM - Mobile

32Mb (1M x 32)

Parallel

166MHz

-

5.5ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

W25Q256FVFJF TR

Winbond Electronics

IC FLASH MEMORY 256MB

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存2,896

-

MT29F4G08ABAFAWP-AITES:F

Micron Technology Inc.

IC FLASH 4G PARALLEL TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存6,192

FLASH

FLASH - NAND

4Gb (512M x 8)

Parallel

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

MT40A1G8SA-062E AUT:E

Micron Technology Inc.

IC SDRAM DDR4 8G PAR 78FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 8Gb (1G x 8)
Memory Interface: Parallel
Clock Frequency: 1.6GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 19ns
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: -40°C ~ 125°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (7.5x11)

封裝: 78-TFBGA

庫存6,112

DRAM

SDRAM - DDR4

8Gb (1G x 8)

Parallel

1.6GHz

15ns

19ns

1.14V ~ 1.26V

-40°C ~ 125°C (TC)

Surface Mount

78-TFBGA

78-FBGA (7.5x11)

NV24C08MUW3VLTBG

onsemi

IC EEPROM 8KBIT I2C 1MHZ 8UDFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kbit
Memory Interface: I2C
Clock Frequency: 1 MHz
Write Cycle Time - Word, Page: 4ms
Access Time: 450 ns
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-UDFN (2x3)

封裝: -

庫存7,959

EEPROM

8Kbit

I2C

1 MHz

4ms

450 ns

1.7V ~ 5.5V

-40°C ~ 125°C (TA)

Surface Mount

8-UFDFN Exposed Pad

8-UDFN (2x3)

GD25WD05CKIGR

GigaDevice Semiconductor (HK) Limited

IC FLASH 512KBIT SPI/DUAL 8USON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 512Kbit
Memory Interface: SPI - Dual I/O
Clock Frequency: 100 MHz
Write Cycle Time - Word, Page: 55µs, 6ms
Access Time: 12 ns
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-XFDFN Exposed Pad
Supplier Device Package: 8-USON (1.5x1.5)

封裝: -

Request a Quote

FLASH

FLASH - NOR (SLC)

512Kbit

SPI - Dual I/O

100 MHz

55µs, 6ms

12 ns

1.65V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-XFDFN Exposed Pad

8-USON (1.5x1.5)

NDS73PT9-20AT-TR

Insignis Technology Corporation

SDR 128MB X32 TSOPII 86L 10X22(X

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mbit
Memory Interface: LVTTL
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 86-TFSOP (0.400", 10.16mm Width)
Supplier Device Package: 86-TSOP II

封裝: -

Request a Quote

DRAM

SDRAM

128Mbit

LVTTL

200 MHz

-

3V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

86-TFSOP (0.400", 10.16mm Width)

86-TSOP II

NDS38PT5-16IT-TR

Insignis Technology Corporation

SDR 256MB X8 TSOPII 54L 10X22(X1

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mbit
Memory Interface: LVTTL
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 12ns
Access Time: 5 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

封裝: -

Request a Quote

DRAM

SDRAM

256Mbit

LVTTL

166 MHz

12ns

5 ns

3V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

CY7C265-25WC

Cypress Semiconductor Corp

IC EPROM 64KBIT PARALLEL

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - UV
Memory Size: 64Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 25 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

EPROM

EPROM - UV

64Kbit

Parallel

-

25 ns

4.5V ~ 5.5V

0°C ~ 70°C (TA)

-