頁 473 - 記憶體 | 積體電路 (IC)

零件編號	製造商	描述	封裝	庫存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IS61WV5128BLL-10BI	ISSI, Integrated Silicon Solution Inc	IC SRAM 4MBIT 10NS 36TFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 2.4 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 36-TFBGA Supplier Device Package: 36-TFBGA (6x8)	封裝: 36-TFBGA	庫存7,232	SRAM	SRAM - Asynchronous	4Mb (512K x 8)	Parallel	-	10ns	10ns	2.4 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	36-TFBGA	36-TFBGA (6x8)
MT29F1G16ABBEAMD-IT:E	Micron Technology Inc.	IC FLASH 1GBIT 25NS 130VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 130-VFBGA Supplier Device Package: 130-VFBGA (8x9)	封裝: 130-VFBGA	庫存2,384	FLASH	FLASH - NAND	1Gb (64M x 16)	Parallel	-	-	-	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	130-VFBGA	130-VFBGA (8x9)
CY7C1011CV33-10ZSXAT	Cypress Semiconductor Corp	IC SRAM 2MBIT 10NS 44TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 2Mb (128K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	封裝: 44-TSOP (0.400", 10.16mm Width)	庫存48,120	SRAM	SRAM - Asynchronous	2Mb (128K x 16)	Parallel	-	10ns	10ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
AT24C02B-TSU-T	Microchip Technology	IC EEPROM 2KBIT 1MHZ SOT23-5 Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 550ns Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: SOT-23-5 Thin, TSOT-23-5 Supplier Device Package: SOT-23-5	封裝: SOT-23-5 Thin, TSOT-23-5	庫存1,931,448	EEPROM	EEPROM	2Kb (256 x 8)	I2C	1MHz	5ms	550ns	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	SOT-23-5 Thin, TSOT-23-5	SOT-23-5
MT48LC64M8A2P-7E:C TR	Micron Technology Inc.	IC SDRAM 512MBIT 133MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 512Mb (64M x 8) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	封裝: 54-TSOP (0.400", 10.16mm Width)	庫存2,160	DRAM	SDRAM	512Mb (64M x 8)	Parallel	133MHz	15ns	5.4ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
AT24C64AN-10SI-2.7	Microchip Technology	IC EEPROM 64KBIT 400KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kb (8K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存304,428	EEPROM	EEPROM	64Kb (8K x 8)	I2C	400kHz	5ms	900ns	2.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
AT49LV002N-12VI	Microchip Technology	IC FLASH 2MBIT 120NS 32VSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 2Mb (256K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 50µs Access Time: 120ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.488", 12.40mm Width) Supplier Device Package: 32-VSOP	封裝: 32-TFSOP (0.488", 12.40mm Width)	庫存2,112	FLASH	FLASH	2Mb (256K x 8)	Parallel	-	50µs	120ns	3 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	32-TFSOP (0.488", 12.40mm Width)	32-VSOP
AT27C040-15JI	Microchip Technology	IC OTP 4MBIT 150NS 32PLCC Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 150ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	封裝: 32-LCC (J-Lead)	庫存7,712	EPROM	EPROM - OTP	4Mb (512K x 8)	Parallel	-	-	150ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	32-LCC (J-Lead)	32-PLCC
W9864G2JB-6	Winbond Electronics	IC SDRAM 64MBIT 166MHZ 90TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 64Mb (2M x 32) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 5ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	封裝: 90-TFBGA	庫存3,008	DRAM	SDRAM	64Mb (2M x 32)	Parallel	166MHz	-	5ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
BR24T02F-WE2	Rohm Semiconductor	IC EEPROM 2KBIT 400KHZ 8SOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.6 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP	封裝: 8-SOIC (0.173", 4.40mm Width)	庫存6,528	EEPROM	EEPROM	2Kb (256 x 8)	I2C	400kHz	5ms	-	1.6 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.173", 4.40mm Width)	8-SOP
CY62157EV18LL-55BVXI	Cypress Semiconductor Corp	IC SRAM 8MBIT 55NS 48VFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 8Mb (512K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 1.65 V ~ 2.25 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-VFBGA Supplier Device Package: 48-VFBGA (6x8)	封裝: 48-VFBGA	庫存3,936	SRAM	SRAM - Asynchronous	8Mb (512K x 16)	Parallel	-	55ns	55ns	1.65 V ~ 2.25 V	-40°C ~ 85°C (TA)	Surface Mount	48-VFBGA	48-VFBGA (6x8)
SST39VF801C-70-4I-MAQE	Microchip Technology	IC FLASH 8MBIT 70NS 48WFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 8Mb (512K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10µs Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-WFBGA Supplier Device Package: 48-WFBGA (6x4)	封裝: 48-WFBGA	庫存6,688	FLASH	FLASH	8Mb (512K x 16)	Parallel	-	10µs	70ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-WFBGA	48-WFBGA (6x4)
CY7S1041GE30-10BVXI	Cypress Semiconductor Corp	IC SRAM 4MBIT 10NS 48VFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 2.2 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-VFBGA Supplier Device Package: 48-VFBGA (6x8)	封裝: 48-VFBGA	庫存8,448	SRAM	SRAM - Asynchronous	4Mb (256K x 16)	Parallel	-	10ns	10ns	2.2 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-VFBGA	48-VFBGA (6x8)
DS2460S+T&R	Maxim Integrated	IC EEPROM 128BIT 400KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 896b (112 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存3,776	EEPROM	EEPROM	896b (112 x 8)	I2C	400kHz	-	-	2.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
BR24G08FVT-3AGE2	Rohm Semiconductor	IC EEPROM 8KBIT 1MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kb (1K x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.6 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP-B	封裝: 8-TSSOP (0.173", 4.40mm Width)	庫存7,856	EEPROM	EEPROM	8Kb (1K x 8)	I2C	1MHz	5ms	-	1.6 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP-B
AS6C1008-55PCN	Alliance Memory, Inc.	IC SRAM 1MBIT 55NS 32DIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 32-DIP (0.600", 15.24mm) Supplier Device Package: 32-PDIP	封裝: 32-DIP (0.600", 15.24mm)	庫存30,288	SRAM	SRAM - Asynchronous	1Mb (128K x 8)	Parallel	-	55ns	55ns	2.7 V ~ 5.5 V	0°C ~ 70°C (TA)	Through Hole	32-DIP (0.600", 15.24mm)	32-PDIP
MT53D512M64D4NW-053 WT:D	Micron Technology Inc.	IC DRAM 32G 1866MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 32Gb (512M x 64) Memory Interface: - Clock Frequency: 1866MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存3,792	DRAM	SDRAM - Mobile LPDDR4	32Gb (512M x 64)	-	1866MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
S25FL128SAGMFB013	Cypress Semiconductor Corp	IC FLASH 128M SPI 133MHZ 16SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	封裝: 16-SOIC (0.295", 7.50mm Width)	庫存21,666	FLASH	FLASH - NOR	128Mb (16M x 8)	SPI - Quad I/O	133MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
IS61NLP102418-200B3-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 18M PARALLEL 165TFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mb (1M x 18) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3.1ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-TFBGA (13x15)	封裝: 165-TBGA	庫存5,344	SRAM	SRAM - Synchronous	18Mb (1M x 18)	Parallel	200MHz	-	3.1ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	165-TBGA	165-TFBGA (13x15)
MT53B8DANK-DC	Micron Technology Inc.	SPECIAL/CUSTOM LPDDR4 Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存4,256	-	-	-	-	-	-	-	-	-	-	-	-
MT29F2G16ABBEAHC-AIT:E	Micron Technology Inc.	IC FLASH 2G PARALLEL FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-VFBGA (10.5x13)	封裝: 63-VFBGA	庫存2,368	FLASH	FLASH - NAND	2Gb (128M x 16)	Parallel	-	-	-	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	63-VFBGA	63-VFBGA (10.5x13)
NDD56PT6-2AET	Insignis Technology Corporation	DDR 512MB X16 TSOPII 66L 10X22(X Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mbit Memory Interface: SSTL_2 Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.3V ~ 2.7V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 66-TSSOP (0.400", 10.16mm Width) Supplier Device Package: 66-TSOP II	封裝: -	Request a Quote	DRAM	SDRAM - DDR	512Mbit	SSTL_2	200 MHz	-	-	2.3V ~ 2.7V	0°C ~ 70°C (TA)	Surface Mount	66-TSSOP (0.400", 10.16mm Width)	66-TSOP II
IS62WV5128EALL-55HLI	ISSI, Integrated Silicon Solution Inc	IC SRAM 4MBIT PARALLEL 32TSOP I Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55 ns Voltage - Supply: 1.65V ~ 2.2V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.465", 11.80mm Width) Supplier Device Package: 32-TSOP I	封裝: -	Request a Quote	SRAM	SRAM - Asynchronous	4Mbit	Parallel	-	55ns	55 ns	1.65V ~ 2.2V	-40°C ~ 85°C (TA)	Surface Mount	32-TFSOP (0.465", 11.80mm Width)	32-TSOP I
AT25FF321A-SSHN-T	Renesas Electronics Corporation	IC FLASH 32MBIT SPI/QUAD 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 104 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.65V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: -	庫存193,560	FLASH	FLASH - NOR	32Mbit	SPI - Quad I/O	104 MHz	-	-	1.65V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
CAT93C66YI-GT3-ON	onsemi	IC EEPROM 4KBIT MICROWIRE 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kbit Memory Interface: Microwire Clock Frequency: 2 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封裝: -	Request a Quote	EEPROM	EEPROM	4Kbit	Microwire	2 MHz	-	-	1.8V ~ 5.5V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
MT62F768M64D4CZ-023-WT-C-TR	Micron Technology Inc.	LPDDR5 48GBIT 64 561/570 TFBGA 4 Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MD28F020-90-B	Rochester Electronics, LLC	256K X 8 ETOX FLASH Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT29F256G08EBCCGB16E3WC1-M	Micron Technology Inc.	TLC 256G DIE 32GX8 Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

IS61WV5128BLL-10BI

ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT 10NS 36TFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 2.4 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 36-TFBGA
Supplier Device Package: 36-TFBGA (6x8)

封裝: 36-TFBGA

庫存7,232

SRAM

SRAM - Asynchronous

4Mb (512K x 8)

Parallel

-

10ns

2.4 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

36-TFBGA

36-TFBGA (6x8)

MT29F1G16ABBEAMD-IT:E

Micron Technology Inc.

IC FLASH 1GBIT 25NS 130VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 130-VFBGA
Supplier Device Package: 130-VFBGA (8x9)

封裝: 130-VFBGA

庫存2,384

FLASH

FLASH - NAND

1Gb (64M x 16)

Parallel

-

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

130-VFBGA

130-VFBGA (8x9)

CY7C1011CV33-10ZSXAT

Cypress Semiconductor Corp

IC SRAM 2MBIT 10NS 44TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 2Mb (128K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

封裝: 44-TSOP (0.400", 10.16mm Width)

庫存48,120

SRAM

SRAM - Asynchronous

2Mb (128K x 16)

Parallel

-

10ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

AT24C02B-TSU-T

Microchip Technology

IC EEPROM 2KBIT 1MHZ SOT23-5

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 550ns
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Supplier Device Package: SOT-23-5

封裝: SOT-23-5 Thin, TSOT-23-5

庫存1,931,448

EEPROM

2Kb (256 x 8)

I2C

1MHz

5ms

550ns

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

SOT-23-5 Thin, TSOT-23-5

SOT-23-5

MT48LC64M8A2P-7E:C TR

Micron Technology Inc.

IC SDRAM 512MBIT 133MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 512Mb (64M x 8)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

封裝: 54-TSOP (0.400", 10.16mm Width)

庫存2,160

DRAM

SDRAM

512Mb (64M x 8)

Parallel

133MHz

15ns

5.4ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

AT24C64AN-10SI-2.7

Microchip Technology

IC EEPROM 64KBIT 400KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kb (8K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存304,428

EEPROM

64Kb (8K x 8)

I2C

400kHz

5ms

900ns

2.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

AT49LV002N-12VI

Microchip Technology

IC FLASH 2MBIT 120NS 32VSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 2Mb (256K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 50µs
Access Time: 120ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.488", 12.40mm Width)
Supplier Device Package: 32-VSOP

封裝: 32-TFSOP (0.488", 12.40mm Width)

庫存2,112

FLASH

2Mb (256K x 8)

Parallel

-

50µs

120ns

3 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

32-TFSOP (0.488", 12.40mm Width)

32-VSOP

AT27C040-15JI

Microchip Technology

IC OTP 4MBIT 150NS 32PLCC

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 150ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

封裝: 32-LCC (J-Lead)

庫存7,712

EPROM

EPROM - OTP

4Mb (512K x 8)

Parallel

-

150ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

32-LCC (J-Lead)

32-PLCC

W9864G2JB-6

Winbond Electronics

IC SDRAM 64MBIT 166MHZ 90TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mb (2M x 32)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 5ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

封裝: 90-TFBGA

庫存3,008

DRAM

SDRAM

64Mb (2M x 32)

Parallel

166MHz

-

5ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

BR24T02F-WE2

Rohm Semiconductor

IC EEPROM 2KBIT 400KHZ 8SOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.6 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-SOP

封裝: 8-SOIC (0.173", 4.40mm Width)

庫存6,528

EEPROM

2Kb (256 x 8)

I2C

400kHz

5ms

-

1.6 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.173", 4.40mm Width)

8-SOP

CY62157EV18LL-55BVXI

Cypress Semiconductor Corp

IC SRAM 8MBIT 55NS 48VFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 8Mb (512K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 1.65 V ~ 2.25 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-VFBGA (6x8)

封裝: 48-VFBGA

庫存3,936

SRAM

SRAM - Asynchronous

8Mb (512K x 16)

Parallel

-

55ns

1.65 V ~ 2.25 V

-40°C ~ 85°C (TA)

Surface Mount

48-VFBGA

48-VFBGA (6x8)

SST39VF801C-70-4I-MAQE

Microchip Technology

IC FLASH 8MBIT 70NS 48WFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 8Mb (512K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10µs
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-WFBGA
Supplier Device Package: 48-WFBGA (6x4)

封裝: 48-WFBGA

庫存6,688

FLASH

8Mb (512K x 16)

Parallel

-

10µs

70ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-WFBGA

48-WFBGA (6x4)

CY7S1041GE30-10BVXI

Cypress Semiconductor Corp

IC SRAM 4MBIT 10NS 48VFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 2.2 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-VFBGA (6x8)

封裝: 48-VFBGA

庫存8,448

SRAM

SRAM - Asynchronous

4Mb (256K x 16)

Parallel

-

10ns

2.2 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-VFBGA

48-VFBGA (6x8)

DS2460S+T&R

Maxim Integrated

IC EEPROM 128BIT 400KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 896b (112 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存3,776

EEPROM

896b (112 x 8)

I2C

400kHz

-

2.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

BR24G08FVT-3AGE2

Rohm Semiconductor

IC EEPROM 8KBIT 1MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kb (1K x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.6 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP-B

封裝: 8-TSSOP (0.173", 4.40mm Width)

庫存7,856

EEPROM

8Kb (1K x 8)

I2C

1MHz

5ms

-

1.6 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP-B

AS6C1008-55PCN

Alliance Memory, Inc.

IC SRAM 1MBIT 55NS 32DIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 32-DIP (0.600", 15.24mm)
Supplier Device Package: 32-PDIP

封裝: 32-DIP (0.600", 15.24mm)

庫存30,288

SRAM

SRAM - Asynchronous

1Mb (128K x 8)

Parallel

-

55ns

2.7 V ~ 5.5 V

0°C ~ 70°C (TA)

Through Hole

32-DIP (0.600", 15.24mm)

32-PDIP

MT53D512M64D4NW-053 WT:D

Micron Technology Inc.

IC DRAM 32G 1866MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gb (512M x 64)
Memory Interface: -
Clock Frequency: 1866MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存3,792

DRAM

SDRAM - Mobile LPDDR4

32Gb (512M x 64)

-

1866MHz

-

1.1V

-30°C ~ 85°C (TC)

-

S25FL128SAGMFB013

Cypress Semiconductor Corp

IC FLASH 128M SPI 133MHZ 16SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

封裝: 16-SOIC (0.295", 7.50mm Width)

庫存21,666

FLASH

FLASH - NOR

128Mb (16M x 8)

SPI - Quad I/O

133MHz

-

2.7 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

IS61NLP102418-200B3-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 18M PARALLEL 165TFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (1M x 18)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3.1ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-TFBGA (13x15)

封裝: 165-TBGA

庫存5,344

SRAM

SRAM - Synchronous

18Mb (1M x 18)

Parallel

200MHz

-

3.1ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

165-TBGA

165-TFBGA (13x15)

MT53B8DANK-DC

Micron Technology Inc.

SPECIAL/CUSTOM LPDDR4

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存4,256

-

MT29F2G16ABBEAHC-AIT:E

Micron Technology Inc.

IC FLASH 2G PARALLEL FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA (10.5x13)

封裝: 63-VFBGA

庫存2,368

FLASH

FLASH - NAND

2Gb (128M x 16)

Parallel

-

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

63-VFBGA

63-VFBGA (10.5x13)

NDD56PT6-2AET

Insignis Technology Corporation

DDR 512MB X16 TSOPII 66L 10X22(X

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512Mbit
Memory Interface: SSTL_2
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.3V ~ 2.7V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package: 66-TSOP II

封裝: -

Request a Quote

DRAM

SDRAM - DDR

512Mbit

SSTL_2

200 MHz

-

2.3V ~ 2.7V

0°C ~ 70°C (TA)

Surface Mount

66-TSSOP (0.400", 10.16mm Width)

66-TSOP II

IS62WV5128EALL-55HLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT PARALLEL 32TSOP I

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55 ns
Voltage - Supply: 1.65V ~ 2.2V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Supplier Device Package: 32-TSOP I

封裝: -

Request a Quote

SRAM

SRAM - Asynchronous

4Mbit

Parallel

-

55ns

55 ns

1.65V ~ 2.2V

-40°C ~ 85°C (TA)

Surface Mount

32-TFSOP (0.465", 11.80mm Width)

32-TSOP I

AT25FF321A-SSHN-T

Renesas Electronics Corporation

IC FLASH 32MBIT SPI/QUAD 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: -

庫存193,560

FLASH

FLASH - NOR

32Mbit

SPI - Quad I/O

104 MHz

-

1.65V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

CAT93C66YI-GT3-ON

onsemi

IC EEPROM 4KBIT MICROWIRE 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kbit
Memory Interface: Microwire
Clock Frequency: 2 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封裝: -

Request a Quote

EEPROM

4Kbit

Microwire

2 MHz

-

1.8V ~ 5.5V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

MT62F768M64D4CZ-023-WT-C-TR

Micron Technology Inc.

LPDDR5 48GBIT 64 561/570 TFBGA 4

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

MD28F020-90-B

Rochester Electronics, LLC

256K X 8 ETOX FLASH

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

MT29F256G08EBCCGB16E3WC1-M

Micron Technology Inc.

TLC 256G DIE 32GX8

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-