頁 45 - 記憶體 | 積體電路 (IC)

零件編號	製造商	描述	封裝	庫存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IS42VM32800E-6BLI-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 256MBIT 166MHZ 90BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile Memory Size: 256Mb (8M x 32) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 5.5ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	封裝: 90-TFBGA	庫存4,592	DRAM	SDRAM - Mobile	256Mb (8M x 32)	Parallel	166MHz	-	5.5ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
CY7C2568KV18-450BZC	Cypress Semiconductor Corp	IC SRAM 72MBIT 450MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, DDR II+ Memory Size: 72Mb (4M x 18) Memory Interface: Parallel Clock Frequency: 450MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	封裝: 165-LBGA	庫存3,520	SRAM	SRAM - Synchronous, DDR II+	72Mb (4M x 18)	Parallel	450MHz	-	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
IDT71V35761YSA166BQ8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 166MHZ 165CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 3.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-CABGA (13x15)	封裝: 165-TBGA	庫存5,504	SRAM	SRAM - Synchronous	4.5Mb (128K x 36)	Parallel	166MHz	-	3.5ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	165-TBGA	165-CABGA (13x15)
IDT71V25761YSA200BQ8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 200MHZ 165CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-CABGA (13x15)	封裝: 165-TBGA	庫存7,200	SRAM	SRAM - Synchronous	4.5Mb (128K x 36)	Parallel	200MHz	-	5ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	165-TBGA	165-CABGA (13x15)
N02L83W2AT25I	ON Semiconductor	IC SRAM 2MBIT 70NS 32TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 2Mb (256K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-LFSOP (0.724", 18.40mm Width) Supplier Device Package: 32-TSOP I	封裝: 32-LFSOP (0.724", 18.40mm Width)	庫存4,448	SRAM	SRAM - Asynchronous	2Mb (256K x 8)	Parallel	-	55ns	55ns	2.3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	32-LFSOP (0.724", 18.40mm Width)	32-TSOP I
IS42S16160B-6TLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 256MBIT 166MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	封裝: 54-TSOP (0.400", 10.16mm Width)	庫存90,948	DRAM	SDRAM	256Mb (16M x 16)	Parallel	166MHz	-	5.4ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
MT48LC8M16A2B4-75 IT:G TR	Micron Technology Inc.	IC SDRAM 128MBIT 133MHZ 54VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-VFBGA Supplier Device Package: 54-VFBGA (8x8)	封裝: 54-VFBGA	庫存7,584	DRAM	SDRAM	128Mb (8M x 16)	Parallel	133MHz	15ns	5.4ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	54-VFBGA	54-VFBGA (8x8)
CY7C056V-15AXC	Cypress Semiconductor Corp	IC SRAM 576KBIT 15NS 144TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 576Kb (16K x 36) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 15ns Access Time: 15ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 144-LQFP Supplier Device Package: 144-TQFP (20x20)	封裝: 144-LQFP	庫存6,544	SRAM	SRAM - Dual Port, Asynchronous	576Kb (16K x 36)	Parallel	-	15ns	15ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	144-LQFP	144-TQFP (20x20)
NAND256W3A0AN6E	STMicroelectronics	IC FLASH 256MBIT 50NS 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 256Mb (32M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 50ns Access Time: 50ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP	封裝: 48-TFSOP (0.724", 18.40mm Width)	庫存6,608	FLASH	FLASH - NAND	256Mb (32M x 8)	Parallel	-	50ns	50ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP
70V9289L9PFI	IDT, Integrated Device Technology Inc	IC SRAM 1MBIT 9NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 1Mb (64K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 9ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封裝: 100-LQFP	庫存5,328	SRAM	SRAM - Dual Port, Synchronous	1Mb (64K x 16)	Parallel	-	-	9ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
MT53B256M64D2TP-062 L XT:C	Micron Technology Inc.	IC SDRAM 16GBIT 1.6GHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 16Gb (256M x 64) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存7,968	DRAM	SDRAM - Mobile LPDDR4	16Gb (256M x 64)	-	1600MHz	-	-	1.1V	-	-	-	-
MT25QU128ABA8ESF-0AAT TR	Micron Technology Inc.	IC FLASH 128MBIT 133MHZ 16SO Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: SPI Clock Frequency: 133MHz Write Cycle Time - Word, Page: 8ms, 2.8ms Access Time: - Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOP2	封裝: 16-SOIC (0.295", 7.50mm Width)	庫存2,864	FLASH	FLASH - NOR	128Mb (16M x 8)	SPI	133MHz	8ms, 2.8ms	-	1.7 V ~ 2 V	-40°C ~ 105°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOP2
W9712G6KB25I TR	Winbond Electronics	IC SDRAM 128MBIT 400MHZ 84BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 400ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 84-TFBGA Supplier Device Package: 84-TFBGA (8x12.5)	封裝: 84-TFBGA	庫存7,808	DRAM	SDRAM - DDR2	128Mb (8M x 16)	Parallel	200MHz	15ns	400ps	1.7 V ~ 1.9 V	-40°C ~ 95°C (TC)	Surface Mount	84-TFBGA	84-TFBGA (8x12.5)
24LC256-I/PG	Microchip Technology	IC EEPROM 256KBIT 400KHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	封裝: 8-DIP (0.300", 7.62mm)	庫存2,176	EEPROM	EEPROM	256Kb (32K x 8)	I2C	400kHz	5ms	900ns	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
AT25XE512C-XMHN-B	Adesto Technologies	IC FLASH 512KBIT 104MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 512Kb (64K x 8) Memory Interface: SPI Clock Frequency: 104MHz Write Cycle Time - Word, Page: 12µs, 3ms Access Time: - Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封裝: 8-TSSOP (0.173", 4.40mm Width)	庫存6,688	FLASH	FLASH	512Kb (64K x 8)	SPI	104MHz	12µs, 3ms	-	1.65 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
MR0A16ACYS35	Everspin Technologies Inc.	IC MRAM 1MBIT 35NS 44TSOP Memory Type: Non-Volatile Memory Format: RAM Technology: MRAM (Magnetoresistive RAM) Memory Size: 1Mb (64K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP2	封裝: 44-TSOP (0.400", 10.16mm Width)	庫存7,392	RAM	MRAM (Magnetoresistive RAM)	1Mb (64K x 16)	Parallel	-	35ns	35ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP2
24C02C/SN	Microchip Technology	IC EEPROM 2KBIT 400KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 1.5ms Access Time: 3500ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存29,526	EEPROM	EEPROM	2Kb (256 x 8)	I2C	400kHz	1.5ms	3500ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
W631GG8MB-15 TR	Winbond Electronics	IC SDRAM 1GBIT 667MHZ 78BGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存3,088	-	-	-	-	-	-	-	-	-	-	-	-
W948D6KBHX5I TR	Winbond Electronics	IC SDRAM 256MBIT 46NM 60BGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存7,968	-	-	-	-	-	-	-	-	-	-	-	-
W25Q64CVTBIG	Winbond Electronics	IC FLASH MEMORY 64MB Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存4,704	-	-	-	-	-	-	-	-	-	-	-	-
W632GG6NB-09	Winbond Electronics	IC SDRAM 2G DDR3 96VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 1.067GHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-VFBGA Supplier Device Package: 96-VFBGA (7.5x13)	封裝: 96-VFBGA	庫存3,920	DRAM	SDRAM - DDR3	2Gb (128M x 16)	Parallel	1.067GHz	15ns	20ns	1.425V ~ 1.575V	0°C ~ 95°C (TC)	Surface Mount	96-VFBGA	96-VFBGA (7.5x13)
S25FL064P0XBHI023	Cypress Semiconductor Corp	IC FLASH 64MBIT 104MHZ 24BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 104MHz Write Cycle Time - Word, Page: 5µs, 3ms Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-BGA (6x8)	封裝: 24-TBGA	庫存20,142	FLASH	FLASH - NOR	64Mb (8M x 8)	SPI - Quad I/O	104MHz	5µs, 3ms	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	24-TBGA	24-BGA (6x8)
CY15B104QSN-108SXIT	Infineon Technologies	IC FRAM 4MBIT SPI/QUAD 8SOIC Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 4Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 108 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.8V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	封裝: -	Request a Quote	FRAM	FRAM (Ferroelectric RAM)	4Mbit	SPI - Quad I/O	108 MHz	-	-	1.8V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
W972GG8KS-18-TR	Winbond Electronics	IC DRAM 2GBIT PARALLEL 60WBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 2Gbit Memory Interface: Parallel Clock Frequency: 533 MHz Write Cycle Time - Word, Page: 15ns Access Time: 58.125 ns Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-WBGA (8x9.5)	封裝: -	Request a Quote	DRAM	SDRAM - DDR2	2Gbit	Parallel	533 MHz	15ns	58.125 ns	1.7V ~ 1.9V	0°C ~ 85°C (TC)	Surface Mount	60-TFBGA	60-WBGA (8x9.5)
CY15B108QI-20BFXAT	Infineon Technologies	FRAM Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 8Mbit Memory Interface: SPI Clock Frequency: 20 MHz Write Cycle Time - Word, Page: - Access Time: 20 ns Voltage - Supply: 1.8V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFLGA Supplier Device Package: 8-UFLGA (3.28x3.23)	封裝: -	Request a Quote	FRAM	FRAM (Ferroelectric RAM)	8Mbit	SPI	20 MHz	-	20 ns	1.8V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-UFLGA	8-UFLGA (3.28x3.23)
SM662GED-BESS	Silicon Motion, Inc.	IC FLASH 320GBIT EMMC 100BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 320Gbit Memory Interface: eMMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 100-LBGA Supplier Device Package: 100-BGA (14x18)	封裝: -	Request a Quote	FLASH	FLASH - NAND (SLC)	320Gbit	eMMC	-	-	-	-	-40°C ~ 85°C	Surface Mount	100-LBGA	100-BGA (14x18)
CY27C010-150JC	Cypress Semiconductor Corp	IC EPROM 1MBIT PARALLEL 32PLCC Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 1Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 150 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC (13.97x11.43)	封裝: -	Request a Quote	EPROM	EPROM - OTP	1Mbit	Parallel	-	-	150 ns	4.5V ~ 5.5V	0°C ~ 70°C (TA)	Surface Mount	32-LCC (J-Lead)	32-PLCC (13.97x11.43)
NM93C46ALEM8	Fairchild Semiconductor	IC EEPROM 1KBIT MICROWIRE 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kbit Memory Interface: Microwire Clock Frequency: 250 kHz Write Cycle Time - Word, Page: 15ms Access Time: - Voltage - Supply: 2.7V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: -	Request a Quote	EEPROM	EEPROM	1Kbit	Microwire	250 kHz	15ms	-	2.7V ~ 5.5V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC

IS42VM32800E-6BLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 166MHZ 90BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile
Memory Size: 256Mb (8M x 32)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 5.5ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

封裝: 90-TFBGA

庫存4,592

DRAM

SDRAM - Mobile

256Mb (8M x 32)

Parallel

166MHz

-

5.5ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

CY7C2568KV18-450BZC

Cypress Semiconductor Corp

IC SRAM 72MBIT 450MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, DDR II+
Memory Size: 72Mb (4M x 18)
Memory Interface: Parallel
Clock Frequency: 450MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

封裝: 165-LBGA

庫存3,520

SRAM

SRAM - Synchronous, DDR II+

72Mb (4M x 18)

Parallel

450MHz

-

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

IDT71V35761YSA166BQ8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 166MHZ 165CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 3.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-CABGA (13x15)

封裝: 165-TBGA

庫存5,504

SRAM

SRAM - Synchronous

4.5Mb (128K x 36)

Parallel

166MHz

-

3.5ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

165-TBGA

165-CABGA (13x15)

IDT71V25761YSA200BQ8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 200MHZ 165CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-CABGA (13x15)

封裝: 165-TBGA

庫存7,200

SRAM

SRAM - Synchronous

4.5Mb (128K x 36)

Parallel

200MHz

-

5ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

165-TBGA

165-CABGA (13x15)

N02L83W2AT25I

ON Semiconductor

IC SRAM 2MBIT 70NS 32TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 2Mb (256K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-LFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP I

封裝: 32-LFSOP (0.724", 18.40mm Width)

庫存4,448

SRAM

SRAM - Asynchronous

2Mb (256K x 8)

Parallel

-

55ns

2.3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

32-LFSOP (0.724", 18.40mm Width)

32-TSOP I

IS42S16160B-6TLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 166MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

封裝: 54-TSOP (0.400", 10.16mm Width)

庫存90,948

DRAM

SDRAM

256Mb (16M x 16)

Parallel

166MHz

-

5.4ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

MT48LC8M16A2B4-75 IT:G TR

Micron Technology Inc.

IC SDRAM 128MBIT 133MHZ 54VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-VFBGA
Supplier Device Package: 54-VFBGA (8x8)

封裝: 54-VFBGA

庫存7,584

DRAM

SDRAM

128Mb (8M x 16)

Parallel

133MHz

15ns

5.4ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

54-VFBGA

54-VFBGA (8x8)

CY7C056V-15AXC

Cypress Semiconductor Corp

IC SRAM 576KBIT 15NS 144TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 576Kb (16K x 36)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 144-LQFP
Supplier Device Package: 144-TQFP (20x20)

封裝: 144-LQFP

庫存6,544

SRAM

SRAM - Dual Port, Asynchronous

576Kb (16K x 36)

Parallel

-

15ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

144-LQFP

144-TQFP (20x20)

NAND256W3A0AN6E

STMicroelectronics

IC FLASH 256MBIT 50NS 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 256Mb (32M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 50ns
Access Time: 50ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP

封裝: 48-TFSOP (0.724", 18.40mm Width)

庫存6,608

FLASH

FLASH - NAND

256Mb (32M x 8)

Parallel

-

50ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP

70V9289L9PFI

IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 9NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 1Mb (64K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 9ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封裝: 100-LQFP

庫存5,328

SRAM

SRAM - Dual Port, Synchronous

1Mb (64K x 16)

Parallel

-

9ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

MT53B256M64D2TP-062 L XT:C

Micron Technology Inc.

IC SDRAM 16GBIT 1.6GHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 16Gb (256M x 64)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存7,968

DRAM

SDRAM - Mobile LPDDR4

16Gb (256M x 64)

-

1600MHz

-

1.1V

-

MT25QU128ABA8ESF-0AAT TR

Micron Technology Inc.

IC FLASH 128MBIT 133MHZ 16SO

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: SPI
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 8ms, 2.8ms
Access Time: -
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOP2

封裝: 16-SOIC (0.295", 7.50mm Width)

庫存2,864

FLASH

FLASH - NOR

128Mb (16M x 8)

SPI

133MHz

8ms, 2.8ms

-

1.7 V ~ 2 V

-40°C ~ 105°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOP2

W9712G6KB25I TR

Winbond Electronics

IC SDRAM 128MBIT 400MHZ 84BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-TFBGA (8x12.5)

封裝: 84-TFBGA

庫存7,808

DRAM

SDRAM - DDR2

128Mb (8M x 16)

Parallel

200MHz

15ns

400ps

1.7 V ~ 1.9 V

-40°C ~ 95°C (TC)

Surface Mount

84-TFBGA

84-TFBGA (8x12.5)

24LC256-I/PG

Microchip Technology

IC EEPROM 256KBIT 400KHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

封裝: 8-DIP (0.300", 7.62mm)

庫存2,176

EEPROM

256Kb (32K x 8)

I2C

400kHz

5ms

900ns

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

AT25XE512C-XMHN-B

Adesto Technologies

IC FLASH 512KBIT 104MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 512Kb (64K x 8)
Memory Interface: SPI
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 12µs, 3ms
Access Time: -
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封裝: 8-TSSOP (0.173", 4.40mm Width)

庫存6,688

FLASH

512Kb (64K x 8)

SPI

104MHz

12µs, 3ms

-

1.65 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

MR0A16ACYS35

Everspin Technologies Inc.

IC MRAM 1MBIT 35NS 44TSOP

Memory Type: Non-Volatile
Memory Format: RAM
Technology: MRAM (Magnetoresistive RAM)
Memory Size: 1Mb (64K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP2

封裝: 44-TSOP (0.400", 10.16mm Width)

庫存7,392

RAM

MRAM (Magnetoresistive RAM)

1Mb (64K x 16)

Parallel

-

35ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP2

24C02C/SN

Microchip Technology

IC EEPROM 2KBIT 400KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 1.5ms
Access Time: 3500ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存29,526

EEPROM

2Kb (256 x 8)

I2C

400kHz

1.5ms

3500ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

W631GG8MB-15 TR

Winbond Electronics

IC SDRAM 1GBIT 667MHZ 78BGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存3,088

-

W948D6KBHX5I TR

Winbond Electronics

IC SDRAM 256MBIT 46NM 60BGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存7,968

-

W25Q64CVTBIG

Winbond Electronics

IC FLASH MEMORY 64MB

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存4,704

-

W632GG6NB-09

Winbond Electronics

IC SDRAM 2G DDR3 96VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 1.067GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-VFBGA
Supplier Device Package: 96-VFBGA (7.5x13)

封裝: 96-VFBGA

庫存3,920

DRAM

SDRAM - DDR3

2Gb (128M x 16)

Parallel

1.067GHz

15ns

20ns

1.425V ~ 1.575V

0°C ~ 95°C (TC)

Surface Mount

96-VFBGA

96-VFBGA (7.5x13)

S25FL064P0XBHI023

Cypress Semiconductor Corp

IC FLASH 64MBIT 104MHZ 24BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 5µs, 3ms
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-BGA (6x8)

封裝: 24-TBGA

庫存20,142

FLASH

FLASH - NOR

64Mb (8M x 8)

SPI - Quad I/O

104MHz

5µs, 3ms

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

24-TBGA

24-BGA (6x8)

CY15B104QSN-108SXIT

Infineon Technologies

IC FRAM 4MBIT SPI/QUAD 8SOIC

Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 4Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 108 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.8V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

封裝: -

Request a Quote

FRAM

FRAM (Ferroelectric RAM)

4Mbit

SPI - Quad I/O

108 MHz

-

1.8V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

W972GG8KS-18-TR

Winbond Electronics

IC DRAM 2GBIT PARALLEL 60WBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 2Gbit
Memory Interface: Parallel
Clock Frequency: 533 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 58.125 ns
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-WBGA (8x9.5)

封裝: -

Request a Quote

DRAM

SDRAM - DDR2

2Gbit

Parallel

533 MHz

15ns

58.125 ns

1.7V ~ 1.9V

0°C ~ 85°C (TC)

Surface Mount

60-TFBGA

60-WBGA (8x9.5)

CY15B108QI-20BFXAT

Infineon Technologies

FRAM

Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 8Mbit
Memory Interface: SPI
Clock Frequency: 20 MHz
Write Cycle Time - Word, Page: -
Access Time: 20 ns
Voltage - Supply: 1.8V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFLGA
Supplier Device Package: 8-UFLGA (3.28x3.23)

封裝: -

Request a Quote

FRAM

FRAM (Ferroelectric RAM)

8Mbit

SPI

20 MHz

-

20 ns

1.8V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-UFLGA

8-UFLGA (3.28x3.23)

SM662GED-BESS

Silicon Motion, Inc.

IC FLASH 320GBIT EMMC 100BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 320Gbit
Memory Interface: eMMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 100-LBGA
Supplier Device Package: 100-BGA (14x18)

封裝: -

Request a Quote

FLASH

FLASH - NAND (SLC)

320Gbit

eMMC

-

-40°C ~ 85°C

Surface Mount

100-LBGA

100-BGA (14x18)

CY27C010-150JC

Cypress Semiconductor Corp

IC EPROM 1MBIT PARALLEL 32PLCC

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 1Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 150 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC (13.97x11.43)

封裝: -

Request a Quote

EPROM

EPROM - OTP

1Mbit

Parallel

-

150 ns

4.5V ~ 5.5V

0°C ~ 70°C (TA)

Surface Mount

32-LCC (J-Lead)

32-PLCC (13.97x11.43)

NM93C46ALEM8

Fairchild Semiconductor

IC EEPROM 1KBIT MICROWIRE 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kbit
Memory Interface: Microwire
Clock Frequency: 250 kHz
Write Cycle Time - Word, Page: 15ms
Access Time: -
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: -

Request a Quote

EEPROM

1Kbit

Microwire

250 kHz

15ms

-

2.7V ~ 5.5V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC