頁 415 - 記憶體 | 積體電路 (IC)

零件編號	製造商	描述	封裝	庫存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
540746-003-00	Cypress Semiconductor Corp	IC FLASH NOR Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存7,888	-	-	-	-	-	-	-	-	-	-	-	-
S99-50407	Cypress Semiconductor Corp	IC FLASH NOR 512MBIT Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存5,824	-	-	-	-	-	-	-	-	-	-	-	-
EDFP164A3PD-MD-F-D	Micron Technology Inc.	LPDDR3 192MX128 PLASTIC GREEN VF Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存5,280	-	-	-	-	-	-	-	-	-	-	-	-
MT29F64G08CECCBH1-12Z:C TR	Micron Technology Inc.	IC FLASH 64GBIT 83MHZ 100VBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 64Gb (8G x 8) Memory Interface: Parallel Clock Frequency: 83MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-VBGA Supplier Device Package: 100-VBGA (12x18)	封裝: 100-VBGA	庫存5,216	FLASH	FLASH - NAND	64Gb (8G x 8)	Parallel	83MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	100-VBGA	100-VBGA (12x18)
W25Q64FVZPIG TR	Winbond Electronics	IC FLASH 64MBIT 104MHZ 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8) Memory Interface: SPI Clock Frequency: 104MHz Write Cycle Time - Word, Page: 3ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x5)	封裝: 8-WDFN Exposed Pad	庫存5,632	FLASH	FLASH - NOR	64Mb (8M x 8)	SPI	104MHz	3ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x5)
PSD4235G2-90U	STMicroelectronics	IC FLASH 4MBIT 90NS 80LQFP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 90ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 80-LQFP Supplier Device Package: 80-LQFP (12x12)	封裝: 80-LQFP	庫存5,856	FLASH	FLASH	4Mb (512K x 8)	Parallel	-	-	90ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	80-LQFP	80-LQFP (12x12)
AT27LV512A-70TC	Microchip Technology	IC OTP 512KBIT 70NS 28TSOP Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 512Kb (64K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 70ns Voltage - Supply: 3 V ~ 3.6 V, 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 28-TSSOP (0.465", 11.80mm Width) Supplier Device Package: 28-TSOP	封裝: 28-TSSOP (0.465", 11.80mm Width)	庫存24,696	EPROM	EPROM - OTP	512Kb (64K x 8)	Parallel	-	-	70ns	3 V ~ 3.6 V, 4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Surface Mount	28-TSSOP (0.465", 11.80mm Width)	28-TSOP
MT41K1G16DGA-125:A	Micron Technology Inc.	IC SDRAM 16GBIT 800MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 16Gb (1G x 16) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存7,092	DRAM	SDRAM - DDR3L	16Gb (1G x 16)	Parallel	800MHz	-	-	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	-	-	-
7006S35PF	IDT, Integrated Device Technology Inc	IC SRAM 128KBIT 35NS 64TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 128Kb (16K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP (14x14)	封裝: 64-LQFP	庫存7,232	SRAM	SRAM - Dual Port, Asynchronous	128Kb (16K x 8)	Parallel	-	35ns	35ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	64-LQFP	64-TQFP (14x14)
IS45S16320F-6TLA1-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 512MBIT 167MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	封裝: 54-TSOP (0.400", 10.16mm Width)	庫存4,816	DRAM	SDRAM	512Mb (32M x 16)	Parallel	167MHz	-	5.4ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
IS42S32800J-75EBLI-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 256MBIT 133MHZ 90BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mb (8M x 32) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 6ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	封裝: 90-TFBGA	庫存6,080	DRAM	SDRAM	256Mb (8M x 32)	Parallel	133MHz	-	6ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
S29GL512T13DHNV13	Cypress Semiconductor Corp	NOR Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (64M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 130ns Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存3,824	FLASH	FLASH - NOR	512Mb (64M x 8)	Parallel	-	60ns	130ns	1.65 V ~ 3.6 V	-40°C ~ 125°C (TA)	-	-	-
M28W640HCB70ZB6E	Micron Technology Inc.	IC FLASH 64MBIT 70NS 48TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (4M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-TFBGA (6.39x10.5)	封裝: 48-TFBGA	庫存2,896	FLASH	FLASH - NOR	64Mb (4M x 16)	Parallel	-	70ns	70ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFBGA	48-TFBGA (6.39x10.5)
24AA515-I/P	Microchip Technology	IC EEPROM 512KBIT 400KHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 512Kb (64K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	封裝: 8-DIP (0.300", 7.62mm)	庫存5,872	EEPROM	EEPROM	512Kb (64K x 8)	I2C	400kHz	5ms	900ns	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
71V016SA20PHG8	IDT, Integrated Device Technology Inc	IC SRAM 1MBIT 20NS 44TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (64K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	封裝: 44-TSOP (0.400", 10.16mm Width)	庫存4,192	SRAM	SRAM - Asynchronous	1Mb (64K x 16)	Parallel	-	20ns	20ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
CY7C1514KV18-250BZXI	Cypress Semiconductor Corp	IC SRAM 72MBIT 250MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II Memory Size: 72Mb (2M x 36) Memory Interface: Parallel Clock Frequency: 250MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	封裝: 165-LBGA	庫存5,760	SRAM	SRAM - Synchronous, QDR II	72Mb (2M x 36)	Parallel	250MHz	-	-	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
93LC76C/WF15K	Microchip Technology	IC EEPROM 8K SPI 3MHZ WAFER Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kb (1K x 8, 512 x 16) Memory Interface: SPI Clock Frequency: 3MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封裝: Die	庫存7,296	EEPROM	EEPROM	8Kb (1K x 8, 512 x 16)	SPI	3MHz	5ms	-	2.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	Die	Die
IS43LD32640B-18BPLI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 2G PARALLEL 533MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 2Gb (64M x 32) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 168-VFBGA Supplier Device Package: 168-VFBGA (12x12)	封裝: 168-VFBGA	庫存6,528	DRAM	SDRAM - Mobile LPDDR2-S4	2Gb (64M x 32)	Parallel	533MHz	15ns	-	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	Surface Mount	168-VFBGA	168-VFBGA (12x12)
MT53E1G16D1FW-046-AAT-A	Micron Technology Inc.	LPDDR4 16G 1GX16 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4X Memory Size: 16Gbit Memory Interface: Parallel Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.5 ns Voltage - Supply: 1.06V ~ 1.17V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 200-TFBGA Supplier Device Package: 200-TFBGA (10x14.5)	封裝: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4X	16Gbit	Parallel	2.133 GHz	18ns	3.5 ns	1.06V ~ 1.17V	-40°C ~ 105°C (TC)	Surface Mount	200-TFBGA	200-TFBGA (10x14.5)
IS43TR16128DL-107MBL-TR	ISSI, Integrated Silicon Solution Inc	2G, 1.5V, DDR3, 128Mx16, 1866MT/ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 2Gbit Memory Interface: Parallel Clock Frequency: 933 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	封裝: -	Request a Quote	DRAM	SDRAM - DDR3L	2Gbit	Parallel	933 MHz	15ns	20 ns	1.283V ~ 1.45V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
QS8888-20P	Quality Semiconductor	CACHE TAG SRAM, 16KX4, 19NS Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
S27KL0642GABHI033	Infineon Technologies	IC PSRAM 64MBIT HYPERBUS 24FBGA Memory Type: Volatile Memory Format: PSRAM Technology: PSRAM (Pseudo SRAM) Memory Size: 64Mbit Memory Interface: HyperBus Clock Frequency: 200 MHz Write Cycle Time - Word, Page: 35ns Access Time: 35 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-FBGA (6x8)	封裝: -	Request a Quote	PSRAM	PSRAM (Pseudo SRAM)	64Mbit	HyperBus	200 MHz	35ns	35 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	24-VBGA	24-FBGA (6x8)
7054S45PRFI8	Renesas Electronics Corporation	IC RAM Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Quad Port, Asynchronous Memory Size: 32Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 128-LQFP Supplier Device Package: 128-TQFP (14x20)	封裝: -	Request a Quote	SRAM	SRAM - Quad Port, Asynchronous	32Kbit	Parallel	-	45ns	45 ns	4.5V ~ 5.5V	-40°C ~ 85°C (TA)	Surface Mount	128-LQFP	128-TQFP (14x20)
CAT24C32YGI	onsemi	IC EEPROM 32KBIT I2C 1MHZ 8MSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 32Kbit Memory Interface: I2C Clock Frequency: 1 MHz Write Cycle Time - Word, Page: 5ms Access Time: 400 ns Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	封裝: -	Request a Quote	EEPROM	EEPROM	32Kbit	I2C	1 MHz	5ms	400 ns	1.7V ~ 5.5V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
MT40A4G4Z42BWC1	Micron Technology Inc.	DDR4 16GB Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
CAT24C21LI	onsemi	IC EEPROM 1KBIT 400KHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kbit Memory Interface: I2C Clock Frequency: 400 kHz Write Cycle Time - Word, Page: 5ms Access Time: 1 µs Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	封裝: -	Request a Quote	EEPROM	EEPROM	1Kbit	I2C	400 kHz	5ms	1 µs	2.5V ~ 5.5V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
IS42S32800L-6BL-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 256MBIT PAR 90TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mbit Memory Interface: LVTTL Clock Frequency: 166 MHz Write Cycle Time - Word, Page: - Access Time: 5.4 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	封裝: -	Request a Quote	DRAM	SDRAM	256Mbit	LVTTL	166 MHz	-	5.4 ns	3V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
MT62F1536M32D4DS-026-AAT-B-TR	Micron Technology Inc.	LPDDR5 48G 1.5GX32 FBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

540746-003-00

Cypress Semiconductor Corp

IC FLASH NOR

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存7,888

-

S99-50407

Cypress Semiconductor Corp

IC FLASH NOR 512MBIT

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存5,824

-

EDFP164A3PD-MD-F-D

Micron Technology Inc.

LPDDR3 192MX128 PLASTIC GREEN VF

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存5,280

-

MT29F64G08CECCBH1-12Z:C TR

Micron Technology Inc.

IC FLASH 64GBIT 83MHZ 100VBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 64Gb (8G x 8)
Memory Interface: Parallel
Clock Frequency: 83MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-VBGA
Supplier Device Package: 100-VBGA (12x18)

封裝: 100-VBGA

庫存5,216

FLASH

FLASH - NAND

64Gb (8G x 8)

Parallel

83MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

100-VBGA

100-VBGA (12x18)

W25Q64FVZPIG TR

Winbond Electronics

IC FLASH 64MBIT 104MHZ 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8)
Memory Interface: SPI
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 3ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x5)

封裝: 8-WDFN Exposed Pad

庫存5,632

FLASH

FLASH - NOR

64Mb (8M x 8)

SPI

104MHz

3ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x5)

PSD4235G2-90U

STMicroelectronics

IC FLASH 4MBIT 90NS 80LQFP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 90ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Supplier Device Package: 80-LQFP (12x12)

封裝: 80-LQFP

庫存5,856

FLASH

4Mb (512K x 8)

Parallel

-

90ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

80-LQFP

80-LQFP (12x12)

AT27LV512A-70TC

Microchip Technology

IC OTP 512KBIT 70NS 28TSOP

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 512Kb (64K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 70ns
Voltage - Supply: 3 V ~ 3.6 V, 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Supplier Device Package: 28-TSOP

封裝: 28-TSSOP (0.465", 11.80mm Width)

庫存24,696

EPROM

EPROM - OTP

512Kb (64K x 8)

Parallel

-

70ns

3 V ~ 3.6 V, 4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Surface Mount

28-TSSOP (0.465", 11.80mm Width)

28-TSOP

MT41K1G16DGA-125:A

Micron Technology Inc.

IC SDRAM 16GBIT 800MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 16Gb (1G x 16)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存7,092

DRAM

SDRAM - DDR3L

16Gb (1G x 16)

Parallel

800MHz

-

1.283 V ~ 1.45 V

0°C ~ 95°C (TC)

-

7006S35PF

IDT, Integrated Device Technology Inc

IC SRAM 128KBIT 35NS 64TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 128Kb (16K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (14x14)

封裝: 64-LQFP

庫存7,232

SRAM

SRAM - Dual Port, Asynchronous

128Kb (16K x 8)

Parallel

-

35ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

64-LQFP

64-TQFP (14x14)

IS45S16320F-6TLA1-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 167MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

封裝: 54-TSOP (0.400", 10.16mm Width)

庫存4,816

DRAM

SDRAM

512Mb (32M x 16)

Parallel

167MHz

-

5.4ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

IS42S32800J-75EBLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 133MHZ 90BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mb (8M x 32)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 6ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

封裝: 90-TFBGA

庫存6,080

DRAM

SDRAM

256Mb (8M x 32)

Parallel

133MHz

-

6ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

S29GL512T13DHNV13

Cypress Semiconductor Corp

NOR

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (64M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 130ns
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存3,824

FLASH

FLASH - NOR

512Mb (64M x 8)

Parallel

-

60ns

130ns

1.65 V ~ 3.6 V

-40°C ~ 125°C (TA)

-

M28W640HCB70ZB6E

Micron Technology Inc.

IC FLASH 64MBIT 70NS 48TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (4M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA (6.39x10.5)

封裝: 48-TFBGA

庫存2,896

FLASH

FLASH - NOR

64Mb (4M x 16)

Parallel

-

70ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFBGA

48-TFBGA (6.39x10.5)

24AA515-I/P

Microchip Technology

IC EEPROM 512KBIT 400KHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 512Kb (64K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

封裝: 8-DIP (0.300", 7.62mm)

庫存5,872

EEPROM

512Kb (64K x 8)

I2C

400kHz

5ms

900ns

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

71V016SA20PHG8

IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 20NS 44TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

封裝: 44-TSOP (0.400", 10.16mm Width)

庫存4,192

SRAM

SRAM - Asynchronous

1Mb (64K x 16)

Parallel

-

20ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

CY7C1514KV18-250BZXI

Cypress Semiconductor Corp

IC SRAM 72MBIT 250MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 72Mb (2M x 36)
Memory Interface: Parallel
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

封裝: 165-LBGA

庫存5,760

SRAM

SRAM - Synchronous, QDR II

72Mb (2M x 36)

Parallel

250MHz

-

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

93LC76C/WF15K

Microchip Technology

IC EEPROM 8K SPI 3MHZ WAFER

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kb (1K x 8, 512 x 16)
Memory Interface: SPI
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封裝: Die

庫存7,296

EEPROM

8Kb (1K x 8, 512 x 16)

SPI

3MHz

5ms

-

2.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

Die

IS43LD32640B-18BPLI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 2G PARALLEL 533MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 2Gb (64M x 32)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 168-VFBGA
Supplier Device Package: 168-VFBGA (12x12)

封裝: 168-VFBGA

庫存6,528

DRAM

SDRAM - Mobile LPDDR2-S4

2Gb (64M x 32)

Parallel

533MHz

15ns

-

1.14 V ~ 1.95 V

-40°C ~ 85°C (TC)

Surface Mount

168-VFBGA

168-VFBGA (12x12)

MT53E1G16D1FW-046-AAT-A

Micron Technology Inc.

LPDDR4 16G 1GX16 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4X
Memory Size: 16Gbit
Memory Interface: Parallel
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.5 ns
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Supplier Device Package: 200-TFBGA (10x14.5)

封裝: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR4X

16Gbit

Parallel

2.133 GHz

18ns

3.5 ns

1.06V ~ 1.17V

-40°C ~ 105°C (TC)

Surface Mount

200-TFBGA

200-TFBGA (10x14.5)

IS43TR16128DL-107MBL-TR

ISSI, Integrated Silicon Solution Inc

2G, 1.5V, DDR3, 128Mx16, 1866MT/

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 2Gbit
Memory Interface: Parallel
Clock Frequency: 933 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

封裝: -

Request a Quote

DRAM

SDRAM - DDR3L

2Gbit

Parallel

933 MHz

15ns

20 ns

1.283V ~ 1.45V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

QS8888-20P

Quality Semiconductor

CACHE TAG SRAM, 16KX4, 19NS

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

S27KL0642GABHI033

Infineon Technologies

IC PSRAM 64MBIT HYPERBUS 24FBGA

Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 64Mbit
Memory Interface: HyperBus
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: 35ns
Access Time: 35 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-FBGA (6x8)

封裝: -

Request a Quote

PSRAM

PSRAM (Pseudo SRAM)

64Mbit

HyperBus

200 MHz

35ns

35 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

24-VBGA

24-FBGA (6x8)

7054S45PRFI8

Renesas Electronics Corporation

IC RAM

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Quad Port, Asynchronous
Memory Size: 32Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 128-LQFP
Supplier Device Package: 128-TQFP (14x20)

封裝: -

Request a Quote

SRAM

SRAM - Quad Port, Asynchronous

32Kbit

Parallel

-

45ns

45 ns

4.5V ~ 5.5V

-40°C ~ 85°C (TA)

Surface Mount

128-LQFP

128-TQFP (14x20)

CAT24C32YGI

onsemi

IC EEPROM 32KBIT I2C 1MHZ 8MSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 32Kbit
Memory Interface: I2C
Clock Frequency: 1 MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 400 ns
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

封裝: -

Request a Quote

EEPROM

32Kbit

I2C

1 MHz

5ms

400 ns

1.7V ~ 5.5V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-MSOP

MT40A4G4Z42BWC1

Micron Technology Inc.

DDR4 16GB

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

CAT24C21LI

onsemi

IC EEPROM 1KBIT 400KHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kbit
Memory Interface: I2C
Clock Frequency: 400 kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 1 µs
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

封裝: -

Request a Quote

EEPROM

1Kbit

I2C

400 kHz

5ms

1 µs

2.5V ~ 5.5V

-40°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

IS42S32800L-6BL-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 256MBIT PAR 90TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mbit
Memory Interface: LVTTL
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

封裝: -

Request a Quote

DRAM

SDRAM

256Mbit

LVTTL

166 MHz

-

5.4 ns

3V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

MT62F1536M32D4DS-026-AAT-B-TR

Micron Technology Inc.

LPDDR5 48G 1.5GX32 FBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-