頁 347 - 記憶體 | 積體電路 (IC) | 黑森爾電子
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記憶體

記錄 62,144
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圖片
零件編號
製造商
描述
封裝
庫存
數量
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IS61NVP51236B-200B3I-TR
ISSI, Integrated Silicon Solution Inc

IC SRAM 18MBIT 200MHZ 165BGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 18Mb (512K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3ns
  • Voltage - Supply: 2.375 V ~ 2.625 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-TFBGA (13x15)
封裝: 165-TBGA
庫存7,776
SRAM
SRAM - Synchronous
18Mb (512K x 36)
Parallel
200MHz
-
3ns
2.375 V ~ 2.625 V
-40°C ~ 85°C (TA)
Surface Mount
165-TBGA
165-TFBGA (13x15)
hot W25Q256FVCIG
Winbond Electronics

IC FLASH 256MBIT 104MHZ 24TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (32M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 104MHz
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-TFBGA (6x8)
封裝: 24-TBGA
庫存7,284
FLASH
FLASH - NOR
256Mb (32M x 8)
SPI
104MHz
3ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
24-TBGA
24-TFBGA (6x8)
IDT71V65803S100PF
IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 100MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous ZBT
  • Memory Size: 9Mb (512K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
封裝: 100-LQFP
庫存2,304
SRAM
SRAM - Synchronous ZBT
9Mb (512K x 18)
Parallel
100MHz
-
5ns
3.135 V ~ 3.465 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
IS43R32800B-5BL
ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 200MHZ 144BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR
  • Memory Size: 256Mb (8M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 700ps
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 144-LFBGA
  • Supplier Device Package: 144-MiniBGA (12x12)
封裝: 144-LFBGA
庫存5,712
DRAM
SDRAM - DDR
256Mb (8M x 32)
Parallel
200MHz
15ns
700ps
2.3 V ~ 2.7 V
0°C ~ 70°C (TA)
Surface Mount
144-LFBGA
144-MiniBGA (12x12)
AT29C257-70JC-T
Microchip Technology

IC FLASH 256KBIT 70NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 70ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC (11.43x13.97)
封裝: 32-LCC (J-Lead)
庫存4,160
FLASH
FLASH
256Kb (32K x 8)
Parallel
-
10ms
70ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC (11.43x13.97)
hot M95040-WMN6T
STMicroelectronics

IC EEPROM 4KBIT 10MHZ 8SO

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (512 x 8)
  • Memory Interface: SPI
  • Clock Frequency: 20MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存151,212
EEPROM
EEPROM
4Kb (512 x 8)
SPI
20MHz
5ms
-
2.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
70T3719MS133BBG
IDT, Integrated Device Technology Inc

IC SRAM 18MBIT 133MHZ 324BGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous
  • Memory Size: 18Mb (256K x 72)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 4.2ns
  • Voltage - Supply: 2.4 V ~ 2.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 324-BGA
  • Supplier Device Package: 324-PBGA (19x19)
封裝: 324-BGA
庫存5,424
SRAM
SRAM - Dual Port, Synchronous
18Mb (256K x 72)
Parallel
133MHz
-
4.2ns
2.4 V ~ 2.6 V
0°C ~ 70°C (TA)
Surface Mount
324-BGA
324-PBGA (19x19)
7052L25PFGI
IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 25NS 120TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Quad Port, Asynchronous
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 120-LQFP
  • Supplier Device Package: 120-TQFP (14x14)
封裝: 120-LQFP
庫存5,232
SRAM
SRAM - Quad Port, Asynchronous
16Kb (2K x 8)
Parallel
-
25ns
25ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
120-LQFP
120-TQFP (14x14)
CY7C1062GN30-10BGXIT
Cypress Semiconductor Corp

ASYNC SRAMS

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 16Mb (512K x 32)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 2.2 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存4,432
SRAM
SRAM - Asynchronous
16Mb (512K x 32)
Parallel
-
10ns
10ns
2.2 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-
7024L17PF
IDT, Integrated Device Technology Inc

IC SRAM 64KBIT 17NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 64Kb (4K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 17ns
  • Access Time: 17ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
封裝: 100-LQFP
庫存5,344
SRAM
SRAM - Dual Port, Asynchronous
64Kb (4K x 16)
Parallel
-
17ns
17ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
hot MT29F8G08ABABAWP-ITX:B
Micron Technology Inc.

IC FLASH 8GBIT 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 8Gb (1G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
封裝: 48-TFSOP (0.724", 18.40mm Width)
庫存2,000
FLASH
FLASH - NAND
8Gb (1G x 8)
Parallel
-
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
CY7C1041GN-10VXI
Cypress Semiconductor Corp

ASYNC SRAMS

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存2,192
SRAM
SRAM - Asynchronous
4Mb (256K x 16)
Parallel
-
10ns
10ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
-
-
-
hot MT29F2G16ABBEAH4:E
Micron Technology Inc.

IC FLASH 2GBIT 63VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 2Gb (128M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 63-VFBGA
  • Supplier Device Package: 63-VFBGA (9x11)
封裝: 63-VFBGA
庫存5,776
FLASH
FLASH - NAND
2Gb (128M x 16)
Parallel
-
-
-
1.7 V ~ 1.95 V
0°C ~ 70°C (TA)
Surface Mount
63-VFBGA
63-VFBGA (9x11)
IS66WV1M16EBLL-70BLI-TR
ISSI, Integrated Silicon Solution Inc

IC PSRAM 16MBIT 60NS 48BGA

  • Memory Type: Volatile
  • Memory Format: PSRAM
  • Technology: PSRAM (Pseudo SRAM)
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 2.5 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-TFBGA (6x8)
封裝: 48-TFBGA
庫存3,040
PSRAM
PSRAM (Pseudo SRAM)
16Mb (1M x 16)
Parallel
-
70ns
70ns
2.5 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFBGA
48-TFBGA (6x8)
AS4C16M16MD1-6BCNTR
Alliance Memory, Inc.

IC SDRAM 256MBIT 166MHZ 60FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile DDR
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -25°C ~ 85°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-FPBGA (8x9)
封裝: 60-TFBGA
庫存2,624
DRAM
SDRAM - Mobile DDR
256Mb (16M x 16)
Parallel
166MHz
15ns
-
1.7 V ~ 1.95 V
-25°C ~ 85°C (TJ)
Surface Mount
60-TFBGA
60-FPBGA (8x9)
hot M25P32-VMF6P
Micron Technology Inc.

IC FLASH 32MBIT 75MHZ 16SO

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 32Mb (4M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 75MHz
  • Write Cycle Time - Word, Page: 15ms, 5ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SO W
封裝: 16-SOIC (0.295", 7.50mm Width)
庫存62,052
FLASH
FLASH - NOR
32Mb (4M x 8)
SPI
75MHz
15ms, 5ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SO W
hot 25AA080T/SN
Microchip Technology

IC EEPROM 8KBIT 1MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 8Kb (1K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存36,960
EEPROM
EEPROM
8Kb (1K x 8)
SPI
1MHz
5ms
-
1.8 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
S-93C66BD0I-K8T3U
SII Semiconductor Corporation

IC EEPROM 4KBIT 2MHZ 8MSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (256 x 16)
  • Memory Interface: SPI
  • Clock Frequency: 2MHz
  • Write Cycle Time - Word, Page: 8ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WSSOP, 8-MSOP (0.110", 2.80mm Width)
  • Supplier Device Package: 8-TMSOP
封裝: 8-WSSOP, 8-MSOP (0.110", 2.80mm Width)
庫存4,736
EEPROM
EEPROM
4Kb (256 x 16)
SPI
2MHz
8ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-WSSOP, 8-MSOP (0.110", 2.80mm Width)
8-TMSOP
hot CY62157ELL-45ZSXI
Cypress Semiconductor Corp

IC SRAM 8MBIT 45NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 8Mb (512K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
封裝: 44-TSOP (0.400", 10.16mm Width)
庫存20,964
SRAM
SRAM - Asynchronous
8Mb (512K x 16)
Parallel
-
45ns
45ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
6116SA15TPG
IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 15NS 24DIP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 15ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 24-DIP (0.300", 7.62mm)
  • Supplier Device Package: 24-PDIP
封裝: 24-DIP (0.300", 7.62mm)
庫存8,004
SRAM
SRAM - Asynchronous
16Kb (2K x 8)
Parallel
-
15ns
15ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Through Hole
24-DIP (0.300", 7.62mm)
24-PDIP
NM27C256QE150
ON Semiconductor

IC EPROM 256K PARALLEL 28CDIP

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - UV
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 150ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 28-CDIP (0.600", 15.24mm) Window
  • Supplier Device Package: 28-CDIP
封裝: 28-CDIP (0.600", 15.24mm) Window
庫存6,624
EPROM
EPROM - UV
256Kb (32K x 8)
Parallel
-
-
150ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Through Hole
28-CDIP (0.600", 15.24mm) Window
28-CDIP
S70PL254J00BFWA20
Cypress Semiconductor Corp

IC FLASH MEM NOR 84MCP

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存6,528
-
-
-
-
-
-
-
-
-
-
-
-
MT44K32M36RCT-125 IT:A TR
Micron Technology Inc.

IC DRAM 1.125G PARALLEL 800MHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM
  • Memory Size: 1.125Gb (32Mb x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 800MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 12ns
  • Voltage - Supply: 1.28 V ~ 1.42 V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存3,456
DRAM
DRAM
1.125Gb (32Mb x 36)
Parallel
800MHz
-
12ns
1.28 V ~ 1.42 V
-40°C ~ 95°C (TC)
-
-
-
SM671PEC-AFST
Silicon Motion, Inc.

IC FLASH 512GBIT UFS3.1 153BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (TLC)
  • Memory Size: 512Gbit
  • Memory Interface: UFS3.1
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 153-TFBGA
  • Supplier Device Package: 153-BGA (11.5x13)
封裝: -
Request a Quote
FLASH
FLASH - NAND (TLC)
512Gbit
UFS3.1
-
-
-
-
-40°C ~ 85°C
Surface Mount
153-TFBGA
153-BGA (11.5x13)
S-93S66A0S-J8T2UD
ABLIC Inc.

IC EEPROM 4KBIT SPI 1MHZ 8SOPJ

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kbit
  • Memory Interface: SPI
  • Clock Frequency: 1 MHz
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: -
  • Voltage - Supply: 4V ~ 5.5V
  • Operating Temperature: -40°C ~ 150°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP-J
封裝: -
庫存300
EEPROM
EEPROM
4Kbit
SPI
1 MHz
10ms
-
4V ~ 5.5V
-40°C ~ 150°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP-J
MT53E768M16D1ZW-046-IT-C
Micron Technology Inc.

LPDDR4 12GBIT 16 200/264 TFBGA 1

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4X
  • Memory Size: 12Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 2.133 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.06V ~ 1.17V
  • Operating Temperature: -40°C ~ 95°C
  • Mounting Type: Surface Mount
  • Package / Case: 200-TFBGA
  • Supplier Device Package: 200-TFBGA (10x14.5)
封裝: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4X
12Gbit
Parallel
2.133 GHz
-
-
1.06V ~ 1.17V
-40°C ~ 95°C
Surface Mount
200-TFBGA
200-TFBGA (10x14.5)
MT29F1G08ABBFAH4-AAT-F-TR
Micron Technology Inc.

IC FLASH 1GBIT PARALLEL 63VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 1Gbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25 ns
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 63-VFBGA
  • Supplier Device Package: 63-VFBGA (9x11)
封裝: -
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FLASH
FLASH - NAND (SLC)
1Gbit
Parallel
-
25ns
25 ns
1.7V ~ 1.95V
-40°C ~ 105°C (TA)
Surface Mount
63-VFBGA
63-VFBGA (9x11)
IS43LD32128B-18BPL-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 4GBIT HSUL 12 168VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR2-S4
  • Memory Size: 4Gbit
  • Memory Interface: HSUL_12
  • Clock Frequency: 533 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.5 ns
  • Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
  • Operating Temperature: 0°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 168-VFBGA
  • Supplier Device Package: 168-VFBGA (12x12)
封裝: -
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DRAM
SDRAM - Mobile LPDDR2-S4
4Gbit
HSUL_12
533 MHz
15ns
5.5 ns
1.14V ~ 1.3V, 1.7V ~ 1.95V
0°C ~ 85°C (TC)
Surface Mount
168-VFBGA
168-VFBGA (12x12)