頁 238 - 記憶體 | 積體電路 (IC)

零件編號	製造商	描述	封裝	庫存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT29F64G08CBCABH1-10Z:A TR	Micron Technology Inc.	IC FLASH 64GBIT 100MHZ 100VBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 64Gb (8G x 8) Memory Interface: Parallel Clock Frequency: 100MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-VBGA Supplier Device Package: 100-VBGA (12x18)	封裝: 100-VBGA	庫存4,128	FLASH	FLASH - NAND	64Gb (8G x 8)	Parallel	100MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	100-VBGA	100-VBGA (12x18)
M25P64S-VMF6P	Micron Technology Inc.	IC FLASH 64MBIT 75MHZ 16SO Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8) Memory Interface: SPI Clock Frequency: 75MHz Write Cycle Time - Word, Page: 15ms, 5ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SO W	封裝: 16-SOIC (0.295", 7.50mm Width)	庫存7,584	FLASH	FLASH - NOR	64Mb (8M x 8)	SPI	75MHz	15ms, 5ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SO W
S25FL204K0TMFI011	Cypress Semiconductor Corp	IC FLASH 4MBIT 85MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 4Mb (512K x 8) Memory Interface: SPI Clock Frequency: 85MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.209", 5.30mm Width)	庫存5,552	FLASH	FLASH - NOR	4Mb (512K x 8)	SPI	85MHz	5ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SO
IDT709389L9PFI8	IDT, Integrated Device Technology Inc	IC SRAM 1.125MBIT 9NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 1.125Mb (64K x 18) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 9ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封裝: 100-LQFP	庫存3,776	SRAM	SRAM - Dual Port, Synchronous	1.125Mb (64K x 18)	Parallel	-	-	9ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
IS42S16160D-6TLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 256MBIT 166MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	封裝: 54-TSOP (0.400", 10.16mm Width)	庫存16,236	DRAM	SDRAM	256Mb (16M x 16)	Parallel	166MHz	-	5.4ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
M50FLW080ANB5TG TR	Micron Technology Inc.	IC FLASH 8MBIT 33MHZ 32TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 8Mb (1M x 8) Memory Interface: Parallel Clock Frequency: 33MHz Write Cycle Time - Word, Page: - Access Time: 250ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -20°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.488", 12.40mm Width) Supplier Device Package: 32-TSOP (8x14)	封裝: 32-TFSOP (0.488", 12.40mm Width)	庫存3,088	FLASH	FLASH - NOR	8Mb (1M x 8)	Parallel	33MHz	-	250ns	3 V ~ 3.6 V	-20°C ~ 85°C (TA)	Surface Mount	32-TFSOP (0.488", 12.40mm Width)	32-TSOP (8x14)
M29F400BB55M1	Micron Technology Inc.	IC FLASH 4MBIT 55NS 44SO Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 4Mb (512K x 8, 256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 44-SOIC (0.496", 12.60mm Width) Supplier Device Package: 44-SO	封裝: 44-SOIC (0.496", 12.60mm Width)	庫存79,944	FLASH	FLASH - NOR	4Mb (512K x 8, 256K x 16)	Parallel	-	55ns	55ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	44-SOIC (0.496", 12.60mm Width)	44-SO
IS41LV16100B-60TLI	ISSI, Integrated Silicon Solution Inc	IC DRAM 16MBIT 60NS 44TSOP Memory Type: Volatile Memory Format: DRAM Technology: DRAM - EDO Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 30ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	封裝: 44-TSOP (0.400", 10.16mm Width)	庫存7,488	DRAM	DRAM - EDO	16Mb (1M x 16)	Parallel	-	-	30ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
CY62137VLL-70ZXE	Cypress Semiconductor Corp	IC SRAM 2MBIT 70NS 44TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 2Mb (128K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	封裝: 44-TSOP (0.400", 10.16mm Width)	庫存4,336	SRAM	SRAM - Asynchronous	2Mb (128K x 16)	Parallel	-	70ns	70ns	2.7 V ~ 3.6 V	-40°C ~ 125°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
AT93C57-10SC-2.5	Microchip Technology	IC EEPROM 2KBIT 2MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8, 128 x 16) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 10ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存5,440	EEPROM	EEPROM	2Kb (256 x 8, 128 x 16)	SPI	2MHz	10ms	-	2.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
AT28C16-20JI	Microchip Technology	IC EEPROM 16KBIT 200NS 32PLCC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 1ms Access Time: 200ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	封裝: 32-LCC (J-Lead)	庫存5,680	EEPROM	EEPROM	16Kb (2K x 8)	Parallel	-	1ms	200ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	32-LCC (J-Lead)	32-PLCC
S70GL02GT11FHV010	Cypress Semiconductor Corp	NOR Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 2Gb (256M x 8, 128M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 110ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存6,128	FLASH	FLASH - NOR	2Gb (256M x 8, 128M x 16)	Parallel	-	-	110ns	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	-	-	-
FM24V01-G	Cypress Semiconductor Corp	IC FRAM 128KBIT 3.4MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 128Kb (16K x 8) Memory Interface: I2C Clock Frequency: 3.4MHz Write Cycle Time - Word, Page: - Access Time: 130ns Voltage - Supply: 2 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存3,664	FRAM	FRAM (Ferroelectric RAM)	128Kb (16K x 8)	I2C	3.4MHz	-	130ns	2 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
47L16-E/ST	Microchip Technology	IC EERAM 16KBIT 1MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EERAM Technology: EEPROM, SRAM Memory Size: 16Kb (2K x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 1ms Access Time: 400ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封裝: 8-TSSOP (0.173", 4.40mm Width)	庫存9,156	EERAM	EEPROM, SRAM	16Kb (2K x 8)	I2C	1MHz	1ms	400ns	2.7 V ~ 3.6 V	-40°C ~ 125°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SST25VF020-20-4I-SAE	Microchip Technology	IC FLASH 2MBIT 20MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 2Mb (256K x 8) Memory Interface: SPI Clock Frequency: 20MHz Write Cycle Time - Word, Page: 20µs Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存69,840	FLASH	FLASH	2Mb (256K x 8)	SPI	20MHz	20µs	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
MT29F4G08ABAEAWP-IT:E TR	Micron Technology Inc.	IC FLASH 4GBIT 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP	封裝: 48-TFSOP (0.724", 18.40mm Width)	庫存4,944	FLASH	FLASH - NAND	4Gb (512M x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP
MX30LF1G08AA-TI	Macronix	IC FLASH 1GBIT 30NS 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 30ns Access Time: 30ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP	封裝: 48-TFSOP (0.724", 18.40mm Width)	庫存75,036	FLASH	FLASH - NAND	1Gb (128M x 8)	Parallel	-	30ns	30ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP
IS62WV2568EBLL-45HLI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 2M PARALLEL 32STSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 2Mb (256K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 2.2 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.465", 11.80mm Width) Supplier Device Package: 32-TSOP I	封裝: 32-TFSOP (0.465", 11.80mm Width)	庫存3,152	SRAM	SRAM - Asynchronous	2Mb (256K x 8)	Parallel	-	45ns	45ns	2.2 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	32-TFSOP (0.465", 11.80mm Width)	32-TSOP I
S29WS128N0SBAW010	Cypress Semiconductor Corp	IC MEMORY NOR Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存3,008	-	-	-	-	-	-	-	-	-	-	-	-
W25Q128FVBJQ TR	Winbond Electronics	IC FLASH MEMORY 128MB Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存3,120	-	-	-	-	-	-	-	-	-	-	-	-
MT29F256G08EBHAFB16A3WTA	Micron Technology Inc.	TLC 256G DIE 32GX8 Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存7,456	-	-	-	-	-	-	-	-	-	-	-	-
71V546XS133PF	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT PARALLEL 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, SDR (ZBT) Memory Size: 4.5Mbit Memory Interface: Parallel Clock Frequency: 133 MHz Write Cycle Time - Word, Page: - Access Time: 4.2 ns Voltage - Supply: 3.135V ~ 3.465V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封裝: -	Request a Quote	SRAM	SRAM - Synchronous, SDR (ZBT)	4.5Mbit	Parallel	133 MHz	-	4.2 ns	3.135V ~ 3.465V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
S25FL512SDSBHBC10	Infineon Technologies	IC FLASH 512MBIT SPI/QUAD 24BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 80 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-BGA (8x6)	封裝: -	Request a Quote	FLASH	FLASH - NOR	512Mbit	SPI - Quad I/O	80 MHz	-	-	2.7V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	24-TBGA	24-BGA (8x6)
W66CP2NQQAFJ	Winbond Electronics	4GB LPDDR4, DDP, X32, 1600MHZ, - Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 4Gbit Memory Interface: LVSTL_11 Clock Frequency: 1.6 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.6 ns Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 200-TFBGA Supplier Device Package: 200-TFBGA (10x14.5)	封裝: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4	4Gbit	LVSTL_11	1.6 GHz	18ns	3.6 ns	1.06V ~ 1.17V, 1.7V ~ 1.95V	-40°C ~ 105°C (TC)	Surface Mount	200-TFBGA	200-TFBGA (10x14.5)
W9816G6JH-7I-TR	Winbond Electronics	IC DRAM 16MBIT LVTTL 50TSOP II Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 16Mbit Memory Interface: LVTTL Clock Frequency: 143 MHz Write Cycle Time - Word, Page: - Access Time: 5 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 50-TSOP (0.400", 10.16mm Width) Supplier Device Package: 50-TSOP II	封裝: -	Request a Quote	DRAM	SDRAM	16Mbit	LVTTL	143 MHz	-	5 ns	3V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	50-TSOP (0.400", 10.16mm Width)	50-TSOP II
GD5F4GQ6REYJGY	GigaDevice Semiconductor (HK) Limited	LINEAR IC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 4Gbit Memory Interface: SPI - Quad I/O Clock Frequency: 80 MHz Write Cycle Time - Word, Page: 600µs Access Time: 11 ns Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x8)	封裝: -	Request a Quote	FLASH	FLASH - NAND (SLC)	4Gbit	SPI - Quad I/O	80 MHz	600µs	11 ns	1.7V ~ 2V	-40°C ~ 105°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
SM662PXC-BESS-1	Silicon Motion, Inc.	IC FLASH 160GBIT EMMC 100BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 160Gbit Memory Interface: eMMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -25°C ~ 85°C Mounting Type: Surface Mount Package / Case: 100-LBGA Supplier Device Package: 100-BGA (14x18)	封裝: -	Request a Quote	FLASH	FLASH - NAND (SLC)	160Gbit	eMMC	-	-	-	-	-25°C ~ 85°C	Surface Mount	100-LBGA	100-BGA (14x18)
GS81313LQ18GK-800I	GSI Technology Inc.	IC SRAM 144MBIT PARALLEL 260BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Quad Port, Synchronous, QDR IIIe Memory Size: 144Mbit Memory Interface: Parallel Clock Frequency: 800 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V ~ 1.35V Operating Temperature: -40°C ~ 100°C (TJ) Mounting Type: Surface Mount Package / Case: 260-BGA Supplier Device Package: 260-BGA (22x14)	封裝: -	Request a Quote	SRAM	SRAM - Quad Port, Synchronous, QDR IIIe	144Mbit	Parallel	800 MHz	-	-	1.2V ~ 1.35V	-40°C ~ 100°C (TJ)	Surface Mount	260-BGA	260-BGA (22x14)

MT29F64G08CBCABH1-10Z:A TR

Micron Technology Inc.

IC FLASH 64GBIT 100MHZ 100VBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 64Gb (8G x 8)
Memory Interface: Parallel
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-VBGA
Supplier Device Package: 100-VBGA (12x18)

封裝: 100-VBGA

庫存4,128

FLASH

FLASH - NAND

64Gb (8G x 8)

Parallel

100MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

100-VBGA

100-VBGA (12x18)

M25P64S-VMF6P

Micron Technology Inc.

IC FLASH 64MBIT 75MHZ 16SO

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8)
Memory Interface: SPI
Clock Frequency: 75MHz
Write Cycle Time - Word, Page: 15ms, 5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SO W

封裝: 16-SOIC (0.295", 7.50mm Width)

庫存7,584

FLASH

FLASH - NOR

64Mb (8M x 8)

SPI

75MHz

15ms, 5ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SO W

S25FL204K0TMFI011

Cypress Semiconductor Corp

IC FLASH 4MBIT 85MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 4Mb (512K x 8)
Memory Interface: SPI
Clock Frequency: 85MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.209", 5.30mm Width)

庫存5,552

FLASH

FLASH - NOR

4Mb (512K x 8)

SPI

85MHz

5ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SO

IDT709389L9PFI8

IDT, Integrated Device Technology Inc

IC SRAM 1.125MBIT 9NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 1.125Mb (64K x 18)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 9ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封裝: 100-LQFP

庫存3,776

SRAM

SRAM - Dual Port, Synchronous

1.125Mb (64K x 18)

Parallel

-

9ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

IS42S16160D-6TLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 166MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

封裝: 54-TSOP (0.400", 10.16mm Width)

庫存16,236

DRAM

SDRAM

256Mb (16M x 16)

Parallel

166MHz

-

5.4ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

M50FLW080ANB5TG TR

Micron Technology Inc.

IC FLASH 8MBIT 33MHZ 32TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mb (1M x 8)
Memory Interface: Parallel
Clock Frequency: 33MHz
Write Cycle Time - Word, Page: -
Access Time: 250ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -20°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.488", 12.40mm Width)
Supplier Device Package: 32-TSOP (8x14)

封裝: 32-TFSOP (0.488", 12.40mm Width)

庫存3,088

FLASH

FLASH - NOR

8Mb (1M x 8)

Parallel

33MHz

-

250ns

3 V ~ 3.6 V

-20°C ~ 85°C (TA)

Surface Mount

32-TFSOP (0.488", 12.40mm Width)

32-TSOP (8x14)

M29F400BB55M1

Micron Technology Inc.

IC FLASH 4MBIT 55NS 44SO

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 4Mb (512K x 8, 256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-SOIC (0.496", 12.60mm Width)
Supplier Device Package: 44-SO

封裝: 44-SOIC (0.496", 12.60mm Width)

庫存79,944

FLASH

FLASH - NOR

4Mb (512K x 8, 256K x 16)

Parallel

-

55ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

44-SOIC (0.496", 12.60mm Width)

44-SO

IS41LV16100B-60TLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 16MBIT 60NS 44TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM - EDO
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 30ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

封裝: 44-TSOP (0.400", 10.16mm Width)

庫存7,488

DRAM

DRAM - EDO

16Mb (1M x 16)

Parallel

-

30ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

CY62137VLL-70ZXE

Cypress Semiconductor Corp

IC SRAM 2MBIT 70NS 44TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 2Mb (128K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

封裝: 44-TSOP (0.400", 10.16mm Width)

庫存4,336

SRAM

SRAM - Asynchronous

2Mb (128K x 16)

Parallel

-

70ns

2.7 V ~ 3.6 V

-40°C ~ 125°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

AT93C57-10SC-2.5

Microchip Technology

IC EEPROM 2KBIT 2MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8, 128 x 16)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 10ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存5,440

EEPROM

2Kb (256 x 8, 128 x 16)

SPI

2MHz

10ms

-

2.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

AT28C16-20JI

Microchip Technology

IC EEPROM 16KBIT 200NS 32PLCC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 1ms
Access Time: 200ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

封裝: 32-LCC (J-Lead)

庫存5,680

EEPROM

16Kb (2K x 8)

Parallel

-

1ms

200ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

32-LCC (J-Lead)

32-PLCC

S70GL02GT11FHV010

Cypress Semiconductor Corp

NOR

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 2Gb (256M x 8, 128M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 110ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存6,128

FLASH

FLASH - NOR

2Gb (256M x 8, 128M x 16)

Parallel

-

110ns

2.7 V ~ 3.6 V

-40°C ~ 105°C (TA)

-

FM24V01-G

Cypress Semiconductor Corp

IC FRAM 128KBIT 3.4MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 128Kb (16K x 8)
Memory Interface: I2C
Clock Frequency: 3.4MHz
Write Cycle Time - Word, Page: -
Access Time: 130ns
Voltage - Supply: 2 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存3,664

FRAM

FRAM (Ferroelectric RAM)

128Kb (16K x 8)

I2C

3.4MHz

-

130ns

2 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

47L16-E/ST

Microchip Technology

IC EERAM 16KBIT 1MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EERAM
Technology: EEPROM, SRAM
Memory Size: 16Kb (2K x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 1ms
Access Time: 400ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封裝: 8-TSSOP (0.173", 4.40mm Width)

庫存9,156

EERAM

EEPROM, SRAM

16Kb (2K x 8)

I2C

1MHz

1ms

400ns

2.7 V ~ 3.6 V

-40°C ~ 125°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

SST25VF020-20-4I-SAE

Microchip Technology

IC FLASH 2MBIT 20MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 2Mb (256K x 8)
Memory Interface: SPI
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 20µs
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存69,840

FLASH

2Mb (256K x 8)

SPI

20MHz

20µs

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

MT29F4G08ABAEAWP-IT:E TR

Micron Technology Inc.

IC FLASH 4GBIT 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP

封裝: 48-TFSOP (0.724", 18.40mm Width)

庫存4,944

FLASH

FLASH - NAND

4Gb (512M x 8)

Parallel

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP

MX30LF1G08AA-TI

Macronix

IC FLASH 1GBIT 30NS 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 30ns
Access Time: 30ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP

封裝: 48-TFSOP (0.724", 18.40mm Width)

庫存75,036

FLASH

FLASH - NAND

1Gb (128M x 8)

Parallel

-

30ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP

IS62WV2568EBLL-45HLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 2M PARALLEL 32STSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 2Mb (256K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 2.2 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Supplier Device Package: 32-TSOP I

封裝: 32-TFSOP (0.465", 11.80mm Width)

庫存3,152

SRAM

SRAM - Asynchronous

2Mb (256K x 8)

Parallel

-

45ns

2.2 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

32-TFSOP (0.465", 11.80mm Width)

32-TSOP I

S29WS128N0SBAW010

Cypress Semiconductor Corp

IC MEMORY NOR

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存3,008

-

W25Q128FVBJQ TR

Winbond Electronics

IC FLASH MEMORY 128MB

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存3,120

-

MT29F256G08EBHAFB16A3WTA

Micron Technology Inc.

TLC 256G DIE 32GX8

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存7,456

-

71V546XS133PF

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT PARALLEL 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, SDR (ZBT)
Memory Size: 4.5Mbit
Memory Interface: Parallel
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: -
Access Time: 4.2 ns
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封裝: -

Request a Quote

SRAM

SRAM - Synchronous, SDR (ZBT)

4.5Mbit

Parallel

133 MHz

-

4.2 ns

3.135V ~ 3.465V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

S25FL512SDSBHBC10

Infineon Technologies

IC FLASH 512MBIT SPI/QUAD 24BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 80 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-BGA (8x6)

封裝: -

Request a Quote

FLASH

FLASH - NOR

512Mbit

SPI - Quad I/O

80 MHz

-

2.7V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

24-TBGA

24-BGA (8x6)

W66CP2NQQAFJ

Winbond Electronics

4GB LPDDR4, DDP, X32, 1600MHZ, -

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 4Gbit
Memory Interface: LVSTL_11
Clock Frequency: 1.6 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.6 ns
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Supplier Device Package: 200-TFBGA (10x14.5)

封裝: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR4

4Gbit

LVSTL_11

1.6 GHz

18ns

3.6 ns

1.06V ~ 1.17V, 1.7V ~ 1.95V

-40°C ~ 105°C (TC)

Surface Mount

200-TFBGA

200-TFBGA (10x14.5)

W9816G6JH-7I-TR

Winbond Electronics

IC DRAM 16MBIT LVTTL 50TSOP II

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 16Mbit
Memory Interface: LVTTL
Clock Frequency: 143 MHz
Write Cycle Time - Word, Page: -
Access Time: 5 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 50-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 50-TSOP II

封裝: -

Request a Quote

DRAM

SDRAM

16Mbit

LVTTL

143 MHz

-

5 ns

3V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

50-TSOP (0.400", 10.16mm Width)

50-TSOP II

GD5F4GQ6REYJGY

GigaDevice Semiconductor (HK) Limited

LINEAR IC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 4Gbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 80 MHz
Write Cycle Time - Word, Page: 600µs
Access Time: 11 ns
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x8)

封裝: -

Request a Quote

FLASH

FLASH - NAND (SLC)

4Gbit

SPI - Quad I/O

80 MHz

600µs

11 ns

1.7V ~ 2V

-40°C ~ 105°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x8)

SM662PXC-BESS-1

Silicon Motion, Inc.

IC FLASH 160GBIT EMMC 100BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 160Gbit
Memory Interface: eMMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -25°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 100-LBGA
Supplier Device Package: 100-BGA (14x18)

封裝: -

Request a Quote

FLASH

FLASH - NAND (SLC)

160Gbit

eMMC

-

-25°C ~ 85°C

Surface Mount

100-LBGA

100-BGA (14x18)

GS81313LQ18GK-800I

GSI Technology Inc.

IC SRAM 144MBIT PARALLEL 260BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Quad Port, Synchronous, QDR IIIe
Memory Size: 144Mbit
Memory Interface: Parallel
Clock Frequency: 800 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V ~ 1.35V
Operating Temperature: -40°C ~ 100°C (TJ)
Mounting Type: Surface Mount
Package / Case: 260-BGA
Supplier Device Package: 260-BGA (22x14)

封裝: -

Request a Quote

SRAM

SRAM - Quad Port, Synchronous, QDR IIIe

144Mbit

Parallel

800 MHz

-

1.2V ~ 1.35V

-40°C ~ 100°C (TJ)

Surface Mount

260-BGA

260-BGA (22x14)