頁 2192 - 記憶體 | 積體電路 (IC) | 黑森爾電子
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記憶體

記錄 62,144
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圖片
零件編號
製造商
描述
封裝
庫存
數量
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
EDBM432B3PD-1D-F-R TR
Micron Technology Inc.

IC SDRAM 12GBIT 533MHZ 216WFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR2
  • Memory Size: 12Gb (384M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 533MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.95 V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存3,808
DRAM
SDRAM - Mobile LPDDR2
12Gb (384M x 32)
Parallel
533MHz
-
-
1.14 V ~ 1.95 V
-30°C ~ 85°C (TC)
-
-
-
MT29C1G12MAAIYAMD-5 IT TR
Micron Technology Inc.

IC FLASH/LPDRAM 1.5GBIT 130VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH - NAND, Mobile LPDRAM
  • Memory Size: 1Gb (128M x 8)(NAND), 512Mb (16M x 32)(LPDRAM)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 130-VFBGA
  • Supplier Device Package: 130-VFBGA (8x9)
封裝: 130-VFBGA
庫存4,240
FLASH, RAM
FLASH - NAND, Mobile LPDRAM
1Gb (128M x 8)(NAND), 512Mb (16M x 32)(LPDRAM)
Parallel
200MHz
-
-
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
130-VFBGA
130-VFBGA (8x9)
AT45DB021D-MH-Y
Adesto Technologies

IC FLASH 2MBIT 66MHZ 8UDFN

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 2Mb (264 Bytes x 1024 pages)
  • Memory Interface: SPI
  • Clock Frequency: 66MHz
  • Write Cycle Time - Word, Page: 4ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UDFN Exposed Pad
  • Supplier Device Package: 8-UDFN (5x6)
封裝: 8-UDFN Exposed Pad
庫存6,992
FLASH
FLASH
2Mb (264 Bytes x 1024 pages)
SPI
66MHz
4ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TC)
Surface Mount
8-UDFN Exposed Pad
8-UDFN (5x6)
IDT71V124SA10TYGI8
IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 10NS 32SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 3.15 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-BSOJ (0.300", 7.62mm Width)
  • Supplier Device Package: 32-SOJ
封裝: 32-BSOJ (0.300", 7.62mm Width)
庫存4,656
SRAM
SRAM - Asynchronous
1Mb (128K x 8)
Parallel
-
10ns
10ns
3.15 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
32-BSOJ (0.300", 7.62mm Width)
32-SOJ
MT46H64M16LFCK-5:A TR
Micron Technology Inc.

IC SDRAM 1GBIT 200MHZ 60VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR
  • Memory Size: 1Gb (64M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.0ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-VFBGA
  • Supplier Device Package: 60-VFBGA (10x11.5)
封裝: 60-VFBGA
庫存7,120
DRAM
SDRAM - Mobile LPDDR
1Gb (64M x 16)
Parallel
200MHz
15ns
5.0ns
1.7 V ~ 1.95 V
0°C ~ 70°C (TA)
Surface Mount
60-VFBGA
60-VFBGA (10x11.5)
93LC66AXT/SN
Microchip Technology

IC EEPROM 4KBIT 2MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (512 x 8)
  • Memory Interface: SPI
  • Clock Frequency: 2MHz
  • Write Cycle Time - Word, Page: 6ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存6,160
EEPROM
EEPROM
4Kb (512 x 8)
SPI
2MHz
6ms
-
2.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
93LC56AXT/SN
Microchip Technology

IC EEPROM 2KBIT 2MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: SPI
  • Clock Frequency: 2MHz
  • Write Cycle Time - Word, Page: 6ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存3,344
EEPROM
EEPROM
2Kb (256 x 8)
SPI
2MHz
6ms
-
2.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
7133SA55FB
IDT, Integrated Device Technology Inc

IC SRAM 32KBIT 55NS 68FPACK

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 32Kb (2K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -55°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 68-Flatpack
  • Supplier Device Package: 68-FPACK
封裝: 68-Flatpack
庫存5,840
SRAM
SRAM - Dual Port, Asynchronous
32Kb (2K x 16)
Parallel
-
55ns
55ns
4.5 V ~ 5.5 V
-55°C ~ 125°C (TA)
Surface Mount
68-Flatpack
68-FPACK
709359L9PF
IDT, Integrated Device Technology Inc

IC SRAM 144KBIT 9NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous
  • Memory Size: 144Kb (8K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 9ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
封裝: 100-LQFP
庫存4,096
SRAM
SRAM - Dual Port, Synchronous
144Kb (8K x 18)
Parallel
-
-
9ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
AS7C513B-15JCN
Alliance Memory, Inc.

IC SRAM 512KBIT 15NS 44SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 512Kb (32K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 15ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package: 44-SOJ
封裝: 44-BSOJ (0.400", 10.16mm Width)
庫存4,608
SRAM
SRAM - Asynchronous
512Kb (32K x 16)
Parallel
-
15ns
15ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
44-BSOJ (0.400", 10.16mm Width)
44-SOJ
71V016SA20PHGI8
IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 20NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (64K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20ns
  • Access Time: 20ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
封裝: 44-TSOP (0.400", 10.16mm Width)
庫存3,568
SRAM
SRAM - Asynchronous
1Mb (64K x 16)
Parallel
-
20ns
20ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
IS25LQ080-JNLE
ISSI, Integrated Silicon Solution Inc

IC FLASH 8MBIT 104MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 8Mb (1M x 8)
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 104MHz
  • Write Cycle Time - Word, Page: 1ms
  • Access Time: -
  • Voltage - Supply: 2.3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存5,392
FLASH
FLASH - NOR
8Mb (1M x 8)
SPI - Quad I/O
104MHz
1ms
-
2.3 V ~ 3.6 V
-40°C ~ 105°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
LE25U40PCMC-AH
ON Semiconductor

IC FLASH 4MBIT 30MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 30MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC/SOPJ
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存3,696
FLASH
FLASH
4Mb (512K x 8)
SPI
30MHz
5ms
-
2.3 V ~ 3.6 V
-40°C ~ 105°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC/SOPJ
34AA02T-E/ST
Microchip Technology

IC EEPROM 2KBIT 400KHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
封裝: 8-TSSOP (0.173", 4.40mm Width)
庫存5,904
EEPROM
EEPROM
2Kb (256 x 8)
I2C
400kHz
5ms
900ns
1.7 V ~ 5.5 V
-40°C ~ 125°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot BR25L080F-WE2
Rohm Semiconductor

IC EEPROM 8KBIT 5MHZ 8SOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 8Kb (1K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 5MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SOP
封裝: 8-SOIC (0.173", 4.40mm Width)
庫存42,000
EEPROM
EEPROM
8Kb (1K x 8)
SPI
5MHz
5ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.173", 4.40mm Width)
8-SOP
A2C00064358 A
Cypress Semiconductor Corp

IC GATE NOR

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存5,808
-
-
-
-
-
-
-
-
-
-
-
-
CG8096AA
Cypress Semiconductor Corp

IC SRAM SYNC 100TQFP

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存6,752
-
-
-
-
-
-
-
-
-
-
-
-
IS43QR16512A-075VBL-TR
ISSI, Integrated Silicon Solution Inc

8G, 1.2V, DDR4, 512Mx16, 2666MT/

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 8Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 1.333 GHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 18 ns
  • Voltage - Supply: 1.14V ~ 1.26V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (10x14)
封裝: -
Request a Quote
DRAM
SDRAM - DDR4
8Gbit
Parallel
1.333 GHz
15ns
18 ns
1.14V ~ 1.26V
0°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (10x14)
IS62C5128EL-45QLI-TR
ISSI, Integrated Silicon Solution Inc

4Mb,Low Power,Async,512K x 8,45n

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-SOIC (0.445", 11.30mm Width)
  • Supplier Device Package: 32-SOP
封裝: -
Request a Quote
SRAM
SRAM - Asynchronous
4Mbit
Parallel
-
45ns
45 ns
4.5V ~ 5.5V
-40°C ~ 85°C (TA)
Surface Mount
32-SOIC (0.445", 11.30mm Width)
32-SOP
CAT64LC40VI-GT3
onsemi

CAT64LC40 - 4-KBit SPI Serial EE

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kbit
  • Memory Interface: SPI
  • Clock Frequency: 1 MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 500 ns
  • Voltage - Supply: 2.5V ~ 6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封裝: -
Request a Quote
EEPROM
EEPROM
4Kbit
SPI
1 MHz
5ms
500 ns
2.5V ~ 6V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
W25N02KWTBIU-TR
Winbond Electronics

2G-BIT SERIAL NAND FLASH, 1.8V

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 2Gbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 104 MHz
  • Write Cycle Time - Word, Page: 700µs
  • Access Time: 8 ns
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-TFBGA (8x6)
封裝: -
Request a Quote
FLASH
FLASH - NAND (SLC)
2Gbit
SPI - Quad I/O
104 MHz
700µs
8 ns
1.7V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
24-TBGA
24-TFBGA (8x6)
W959D6NFKX4I-TR
Winbond Electronics

512MB HYPERRAM X16, 250MHZ, IND

  • Memory Type: Volatile
  • Memory Format: PSRAM
  • Technology: PSRAM (Pseudo SRAM)
  • Memory Size: 512Mbit
  • Memory Interface: HyperBus
  • Clock Frequency: 250 MHz
  • Write Cycle Time - Word, Page: 35ns
  • Access Time: 28 ns
  • Voltage - Supply: 1.7V ~ 2V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 49-WFBGA
  • Supplier Device Package: 49-WFBGA (4x4)
封裝: -
Request a Quote
PSRAM
PSRAM (Pseudo SRAM)
512Mbit
HyperBus
250 MHz
35ns
28 ns
1.7V ~ 2V
-40°C ~ 85°C (TC)
Surface Mount
49-WFBGA
49-WFBGA (4x4)
W971GG8NB-18-TR
Winbond Electronics

IC DRAM 1GBIT SSTL 18 60VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 1Gbit
  • Memory Interface: SSTL_18
  • Clock Frequency: 533 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 58.125 ns
  • Voltage - Supply: 1.7V ~ 1.9V
  • Operating Temperature: 0°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 60-VFBGA
  • Supplier Device Package: 60-VFBGA (8x9.5)
封裝: -
Request a Quote
DRAM
SDRAM - DDR2
1Gbit
SSTL_18
533 MHz
15ns
58.125 ns
1.7V ~ 1.9V
0°C ~ 85°C (TC)
Surface Mount
60-VFBGA
60-VFBGA (8x9.5)
MT62F2G64D8ZA-020-WT-C
Micron Technology Inc.

LPDDR5 PLASTIC Y52P

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR5X
  • Memory Size: 128Gbit
  • Memory Interface: LVSTL
  • Clock Frequency: 4.8 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.01V ~ 1.12V
  • Operating Temperature: -25°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 496-WFBGA
  • Supplier Device Package: 496-WFBGA (14x12.4)
封裝: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR5X
128Gbit
LVSTL
4.8 GHz
-
-
1.01V ~ 1.12V
-25°C ~ 85°C (TC)
Surface Mount
496-WFBGA
496-WFBGA (14x12.4)
MTFC64GASAQHD-AAT
Micron Technology Inc.

USSD 512G

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 512Gbit
  • Memory Interface: eMMC_5.1
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 153-VFBGA
  • Supplier Device Package: 153-VFBGA (11.5x13)
封裝: -
Request a Quote
FLASH
FLASH - NAND (SLC)
512Gbit
eMMC_5.1
200 MHz
-
-
2.7V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
153-VFBGA
153-VFBGA (11.5x13)
25CS640T-I-MS
Microchip Technology

IC MEMORY EEPROM 64MB SPI

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
IS67WVC4M16EALL-7010BLIA1-TR
ISSI, Integrated Silicon Solution Inc

IC PSRAM 64MBIT PARALLEL 104MHZ

  • Memory Type: Volatile
  • Memory Format: PSRAM
  • Technology: PSRAM (Pseudo SRAM)
  • Memory Size: 64Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 104 MHz
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70 ns
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
PSRAM
PSRAM (Pseudo SRAM)
64Mbit
Parallel
104 MHz
70ns
70 ns
1.7V ~ 1.95V
-40°C ~ 85°C (TC)
-
-
-
27C010-120DI
Rochester Electronics, LLC

IC EPROM 1MBIT PARALLEL 32CDIP

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 1Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 120 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 32-CDIP (0.600", 15.24mm)
  • Supplier Device Package: 32-CDIP
封裝: -
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EPROM
EPROM - OTP
1Mbit
Parallel
-
-
120 ns
4.5V ~ 5.5V
-40°C ~ 85°C (TA)
Through Hole
32-CDIP (0.600", 15.24mm)
32-CDIP