頁 2174 - 記憶體 | 積體電路 (IC)

零件編號	製造商	描述	封裝	庫存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
M29F160FB55N3F2 TR	Micron Technology Inc.	IC FLASH 16MBIT 55NS 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 16Mb (2M x 8, 1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP	封裝: 48-TFSOP (0.724", 18.40mm Width)	庫存5,776	FLASH	FLASH - NOR	16Mb (2M x 8, 1M x 16)	Parallel	-	55ns	55ns	4.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP
W25Q64FVSFIG	Winbond Electronics	IC FLASH 64MBIT 104MHZ 16SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8) Memory Interface: SPI Clock Frequency: 104MHz Write Cycle Time - Word, Page: 3ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	封裝: 16-SOIC (0.295", 7.50mm Width)	庫存6,640	FLASH	FLASH - NOR	64Mb (8M x 8)	SPI	104MHz	3ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
IDT71P73604S200BQ8	IDT, Integrated Device Technology Inc	IC SRAM 18MBIT 200MHZ 165CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - DDR2 Memory Size: 18Mb (512K x 36) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 7.88ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-CABGA (13x15)	封裝: 165-TBGA	庫存4,128	SRAM	SRAM - DDR2	18Mb (512K x 36)	Parallel	200MHz	-	7.88ns	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-TBGA	165-CABGA (13x15)
CY7C037AV-20AXC	Cypress Semiconductor Corp	IC SRAM 576KBIT 20NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 576Kb (32K x 18) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封裝: 100-LQFP	庫存2,064	SRAM	SRAM - Dual Port, Asynchronous	576Kb (32K x 18)	Parallel	-	20ns	20ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
CY7C1294DV18-167BZC	Cypress Semiconductor Corp	IC SRAM 9MBIT 167MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II Memory Size: 9Mb (256K x 36) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	封裝: 165-LBGA	庫存2,896	SRAM	SRAM - Synchronous, QDR II	9Mb (256K x 36)	Parallel	167MHz	-	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
DS1250W-100IND	Maxim Integrated	IC NVSRAM 4MBIT 100NS 32EDIP Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 100ns Access Time: 100ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 32-DIP Module (0.600", 15.24mm) Supplier Device Package: 32-EDIP	封裝: 32-DIP Module (0.600", 15.24mm)	庫存2,384	NVSRAM	NVSRAM (Non-Volatile SRAM)	4Mb (512K x 8)	Parallel	-	100ns	100ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Through Hole	32-DIP Module (0.600", 15.24mm)	32-EDIP
AT25256T2-10TC-2.7	Microchip Technology	IC EEPROM 256KBIT 3MHZ 20TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: SPI Clock Frequency: 3MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 20-TSSOP	封裝: 20-TSSOP (0.173", 4.40mm Width)	庫存4,752	EEPROM	EEPROM	256Kb (32K x 8)	SPI	3MHz	5ms	-	2.7 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	20-TSSOP (0.173", 4.40mm Width)	20-TSSOP
70T3519S133DR	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 133MHZ 208QFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 9Mb (256K x 36) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 4.2ns Voltage - Supply: 2.4 V ~ 2.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 208-BFQFP Supplier Device Package: 208-PQFP (28x28)	封裝: 208-BFQFP	庫存6,032	SRAM	SRAM - Dual Port, Synchronous	9Mb (256K x 36)	Parallel	133MHz	-	4.2ns	2.4 V ~ 2.6 V	0°C ~ 70°C (TA)	Surface Mount	208-BFQFP	208-PQFP (28x28)
70V659S12BFI8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 12NS 208CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12ns Voltage - Supply: 3.15 V ~ 3.45 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 208-LFBGA Supplier Device Package: 208-CABGA (15x15)	封裝: 208-LFBGA	庫存4,992	SRAM	SRAM - Dual Port, Asynchronous	4.5Mb (128K x 36)	Parallel	-	12ns	12ns	3.15 V ~ 3.45 V	-40°C ~ 85°C (TA)	Surface Mount	208-LFBGA	208-CABGA (15x15)
70V26S35G	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 35NS 84PGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 256Kb (16K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 84-BPGA Supplier Device Package: 84-PGA (27.94x27.94)	封裝: 84-BPGA	庫存4,640	SRAM	SRAM - Dual Port, Asynchronous	256Kb (16K x 16)	Parallel	-	35ns	35ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Through Hole	84-BPGA	84-PGA (27.94x27.94)
7015L20PFI8	IDT, Integrated Device Technology Inc	IC SRAM 72KBIT 20NS 80TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 72Kb (8K x 9) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 80-LQFP Supplier Device Package: 80-TQFP (14x14)	封裝: 80-LQFP	庫存4,976	SRAM	SRAM - Dual Port, Asynchronous	72Kb (8K x 9)	Parallel	-	20ns	20ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	80-LQFP	80-TQFP (14x14)
MT46V64M8P-5B AIT:J	Micron Technology Inc.	IC SDRAM 512MBIT 200MHZ 66TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (64M x 8) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 66-TSSOP (0.400", 10.16mm Width) Supplier Device Package: 66-TSOP	封裝: 66-TSSOP (0.400", 10.16mm Width)	庫存6,592	DRAM	SDRAM - DDR	512Mb (64M x 8)	Parallel	200MHz	15ns	700ps	2.3 V ~ 2.7 V	-40°C ~ 85°C (TA)	Surface Mount	66-TSSOP (0.400", 10.16mm Width)	66-TSOP
MX29GL512FHXFI-10Q	Macronix	IC FLASH 512MBIT 100NS 64LFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (64M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 100ns Access Time: 100ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA, CSPBGA Supplier Device Package: 64-LFBGA, CSP (11x13)	封裝: 64-LBGA, CSPBGA	庫存14,232	FLASH	FLASH - NOR	512Mb (64M x 8)	Parallel	-	100ns	100ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-LBGA, CSPBGA	64-LFBGA, CSP (11x13)
S29GL032N90FAI032	Cypress Semiconductor Corp	IC FLASH 32MBIT 90NS 64BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (4M x 8, 2M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 90ns Access Time: 90ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-Fortified BGA (13x11)	封裝: 64-LBGA	庫存4,608	FLASH	FLASH - NOR	32Mb (4M x 8, 2M x 16)	Parallel	-	90ns	90ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-Fortified BGA (13x11)
25AA160-I/P	Microchip Technology	IC EEPROM 16KBIT 1MHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: SPI Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	封裝: 8-DIP (0.300", 7.62mm)	庫存5,120	EEPROM	EEPROM	16Kb (2K x 8)	SPI	1MHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
CAV93C76VE-GT3	ON Semiconductor	IC EEPROM 8KBIT 2MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kb (1K x 8, 512 x 16) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存4,720	EEPROM	EEPROM	8Kb (1K x 8, 512 x 16)	SPI	2MHz	-	-	2.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
24AA014H-I/MS	Microchip Technology	IC EEPROM 1KBIT 400KHZ 8MSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	封裝: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	庫存7,520	EEPROM	EEPROM	1Kb (128 x 8)	I2C	400kHz	5ms	900ns	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
24LC04BHT-I/SN	Microchip Technology	IC EEPROM 4KBIT 400KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (256 x 8 x 2) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存4,304	EEPROM	EEPROM	4Kb (256 x 8 x 2)	I2C	400kHz	5ms	900ns	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
93C66AT-I/OT	Microchip Technology	IC EEPROM 4KBIT 2MHZ SOT23-6 Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (512 x 8) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 2ms Access Time: - Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6	封裝: SOT-23-6	庫存7,200	EEPROM	EEPROM	4Kb (512 x 8)	SPI	2MHz	2ms	-	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	SOT-23-6	SOT-23-6
FM28V202A-TG	Cypress Semiconductor Corp	IC FRAM 2MBIT 60NS 44TSOPII Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 2Mb (128K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 90ns Access Time: 90ns Voltage - Supply: 2 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	封裝: 44-TSOP (0.400", 10.16mm Width)	庫存7,088	FRAM	FRAM (Ferroelectric RAM)	2Mb (128K x 16)	Parallel	-	90ns	90ns	2 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
W632GU6MB-12 TR	Winbond Electronics	IC DRAM 2G PARALLEL 96VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-VFBGA Supplier Device Package: 96-VFBGA (13x7.5)	封裝: 96-VFBGA	庫存2,192	DRAM	SDRAM - DDR3	2Gb (128M x 16)	Parallel	800MHz	-	20ns	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	Surface Mount	96-VFBGA	96-VFBGA (13x7.5)
S29GL256N10FFI010	Cypress Semiconductor Corp	IC FLASH Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8, 16M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 100ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (13x11)	封裝: 64-LBGA	庫存7,596	FLASH	FLASH - NOR	256Mb (32M x 8, 16M x 16)	Parallel	-	60ns	100ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-FBGA (13x11)
70V24S20PFI8	IDT, Integrated Device Technology Inc	IC SRAM 64K PARALLEL 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 64Kb (4K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封裝: 100-LQFP	庫存2,832	SRAM	SRAM - Dual Port, Asynchronous	64Kb (4K x 16)	Parallel	-	20ns	20ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
SM662GXF-BFST	Silicon Motion, Inc.	IC FLASH 4TBIT EMMC 100BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (TLC) Memory Size: 4Tbit Memory Interface: eMMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -25°C ~ 85°C Mounting Type: Surface Mount Package / Case: 100-LBGA Supplier Device Package: 100-BGA (14x18)	封裝: -	Request a Quote	FLASH	FLASH - NAND (TLC)	4Tbit	eMMC	-	-	-	-	-25°C ~ 85°C	Surface Mount	100-LBGA	100-BGA (14x18)
5962-8855202UA	Renesas Electronics Corporation	IC SRAM 256KBIT PARALLEL 28CDIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 256Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 28-CDIP (0.300", 7.62mm) Supplier Device Package: 28-CDIP	封裝: -	Request a Quote	SRAM	SRAM - Synchronous	256Kbit	Parallel	-	70ns	70 ns	4.5V ~ 5.5V	-55°C ~ 125°C (TA)	Through Hole	28-CDIP (0.300", 7.62mm)	28-CDIP
25CS640T-E-ST	Microchip Technology	IC MEMORY EEPROM 64MB SPI Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
SM671PADLBFSS	Silicon Motion, Inc.	IC FLASH 320GBIT UFS3.1 153BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 320Gbit Memory Interface: UFS3.1 Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 153-TBGA Supplier Device Package: 153-BGA (11.5x13)	封裝: -	Request a Quote	FLASH	FLASH - NAND (SLC)	320Gbit	UFS3.1	-	-	-	-	-40°C ~ 85°C	Surface Mount	153-TBGA	153-BGA (11.5x13)
AS6C1616C-45TIN	Alliance Memory, Inc.	LP-ASYNCH SRAM - C DIE Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Single Port, Asynchronous Memory Size: 16Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	封裝: -	Request a Quote	SRAM	SRAM - Single Port, Asynchronous	16Mbit	Parallel	-	45ns	45 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I

M29F160FB55N3F2 TR

Micron Technology Inc.

IC FLASH 16MBIT 55NS 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 16Mb (2M x 8, 1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP

封裝: 48-TFSOP (0.724", 18.40mm Width)

庫存5,776

FLASH

FLASH - NOR

16Mb (2M x 8, 1M x 16)

Parallel

-

55ns

4.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP

W25Q64FVSFIG

Winbond Electronics

IC FLASH 64MBIT 104MHZ 16SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8)
Memory Interface: SPI
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 3ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

封裝: 16-SOIC (0.295", 7.50mm Width)

庫存6,640

FLASH

FLASH - NOR

64Mb (8M x 8)

SPI

104MHz

3ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

IDT71P73604S200BQ8

IDT, Integrated Device Technology Inc

IC SRAM 18MBIT 200MHZ 165CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - DDR2
Memory Size: 18Mb (512K x 36)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 7.88ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-CABGA (13x15)

封裝: 165-TBGA

庫存4,128

SRAM

SRAM - DDR2

18Mb (512K x 36)

Parallel

200MHz

-

7.88ns

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-TBGA

165-CABGA (13x15)

CY7C037AV-20AXC

Cypress Semiconductor Corp

IC SRAM 576KBIT 20NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 576Kb (32K x 18)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封裝: 100-LQFP

庫存2,064

SRAM

SRAM - Dual Port, Asynchronous

576Kb (32K x 18)

Parallel

-

20ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

CY7C1294DV18-167BZC

Cypress Semiconductor Corp

IC SRAM 9MBIT 167MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 9Mb (256K x 36)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

封裝: 165-LBGA

庫存2,896

SRAM

SRAM - Synchronous, QDR II

9Mb (256K x 36)

Parallel

167MHz

-

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

DS1250W-100IND

Maxim Integrated

IC NVSRAM 4MBIT 100NS 32EDIP

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 32-DIP Module (0.600", 15.24mm)
Supplier Device Package: 32-EDIP

封裝: 32-DIP Module (0.600", 15.24mm)

庫存2,384

NVSRAM

NVSRAM (Non-Volatile SRAM)

4Mb (512K x 8)

Parallel

-

100ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Through Hole

32-DIP Module (0.600", 15.24mm)

32-EDIP

AT25256T2-10TC-2.7

Microchip Technology

IC EEPROM 256KBIT 3MHZ 20TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: SPI
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 20-TSSOP

封裝: 20-TSSOP (0.173", 4.40mm Width)

庫存4,752

EEPROM

256Kb (32K x 8)

SPI

3MHz

5ms

-

2.7 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

20-TSSOP (0.173", 4.40mm Width)

20-TSSOP

70T3519S133DR

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 133MHZ 208QFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 9Mb (256K x 36)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 4.2ns
Voltage - Supply: 2.4 V ~ 2.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 208-BFQFP
Supplier Device Package: 208-PQFP (28x28)

封裝: 208-BFQFP

庫存6,032

SRAM

SRAM - Dual Port, Synchronous

9Mb (256K x 36)

Parallel

133MHz

-

4.2ns

2.4 V ~ 2.6 V

0°C ~ 70°C (TA)

Surface Mount

208-BFQFP

208-PQFP (28x28)

70V659S12BFI8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 12NS 208CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 208-LFBGA
Supplier Device Package: 208-CABGA (15x15)

封裝: 208-LFBGA

庫存4,992

SRAM

SRAM - Dual Port, Asynchronous

4.5Mb (128K x 36)

Parallel

-

12ns

3.15 V ~ 3.45 V

-40°C ~ 85°C (TA)

Surface Mount

208-LFBGA

208-CABGA (15x15)

70V26S35G

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 35NS 84PGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 256Kb (16K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 84-BPGA
Supplier Device Package: 84-PGA (27.94x27.94)

封裝: 84-BPGA

庫存4,640

SRAM

SRAM - Dual Port, Asynchronous

256Kb (16K x 16)

Parallel

-

35ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Through Hole

84-BPGA

84-PGA (27.94x27.94)

7015L20PFI8

IDT, Integrated Device Technology Inc

IC SRAM 72KBIT 20NS 80TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 72Kb (8K x 9)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Supplier Device Package: 80-TQFP (14x14)

封裝: 80-LQFP

庫存4,976

SRAM

SRAM - Dual Port, Asynchronous

72Kb (8K x 9)

Parallel

-

20ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

80-LQFP

80-TQFP (14x14)

MT46V64M8P-5B AIT:J

Micron Technology Inc.

IC SDRAM 512MBIT 200MHZ 66TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512Mb (64M x 8)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package: 66-TSOP

封裝: 66-TSSOP (0.400", 10.16mm Width)

庫存6,592

DRAM

SDRAM - DDR

512Mb (64M x 8)

Parallel

200MHz

15ns

700ps

2.3 V ~ 2.7 V

-40°C ~ 85°C (TA)

Surface Mount

66-TSSOP (0.400", 10.16mm Width)

66-TSOP

MX29GL512FHXFI-10Q

Macronix

IC FLASH 512MBIT 100NS 64LFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (64M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA, CSPBGA
Supplier Device Package: 64-LFBGA, CSP (11x13)

封裝: 64-LBGA, CSPBGA

庫存14,232

FLASH

FLASH - NOR

512Mb (64M x 8)

Parallel

-

100ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-LBGA, CSPBGA

64-LFBGA, CSP (11x13)

S29GL032N90FAI032

Cypress Semiconductor Corp

IC FLASH 32MBIT 90NS 64BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8, 2M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-Fortified BGA (13x11)

封裝: 64-LBGA

庫存4,608

FLASH

FLASH - NOR

32Mb (4M x 8, 2M x 16)

Parallel

-

90ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-Fortified BGA (13x11)

25AA160-I/P

Microchip Technology

IC EEPROM 16KBIT 1MHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: SPI
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

封裝: 8-DIP (0.300", 7.62mm)

庫存5,120

EEPROM

16Kb (2K x 8)

SPI

1MHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

CAV93C76VE-GT3

ON Semiconductor

IC EEPROM 8KBIT 2MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kb (1K x 8, 512 x 16)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存4,720

EEPROM

8Kb (1K x 8, 512 x 16)

SPI

2MHz

-

2.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

24AA014H-I/MS

Microchip Technology

IC EEPROM 1KBIT 400KHZ 8MSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

封裝: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

庫存7,520

EEPROM

1Kb (128 x 8)

I2C

400kHz

5ms

900ns

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-MSOP

24LC04BHT-I/SN

Microchip Technology

IC EEPROM 4KBIT 400KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (256 x 8 x 2)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存4,304

EEPROM

4Kb (256 x 8 x 2)

I2C

400kHz

5ms

900ns

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

93C66AT-I/OT

Microchip Technology

IC EEPROM 4KBIT 2MHZ SOT23-6

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (512 x 8)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 2ms
Access Time: -
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6

封裝: SOT-23-6

庫存7,200

EEPROM

4Kb (512 x 8)

SPI

2MHz

2ms

-

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

SOT-23-6

FM28V202A-TG

Cypress Semiconductor Corp

IC FRAM 2MBIT 60NS 44TSOPII

Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 2Mb (128K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Voltage - Supply: 2 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

封裝: 44-TSOP (0.400", 10.16mm Width)

庫存7,088

FRAM

FRAM (Ferroelectric RAM)

2Mb (128K x 16)

Parallel

-

90ns

2 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

W632GU6MB-12 TR

Winbond Electronics

IC DRAM 2G PARALLEL 96VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-VFBGA
Supplier Device Package: 96-VFBGA (13x7.5)

封裝: 96-VFBGA

庫存2,192

DRAM

SDRAM - DDR3

2Gb (128M x 16)

Parallel

800MHz

-

20ns

1.283 V ~ 1.45 V

0°C ~ 95°C (TC)

Surface Mount

96-VFBGA

96-VFBGA (13x7.5)

S29GL256N10FFI010

Cypress Semiconductor Corp

IC FLASH

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8, 16M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 100ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (13x11)

封裝: 64-LBGA

庫存7,596

FLASH

FLASH - NOR

256Mb (32M x 8, 16M x 16)

Parallel

-

60ns

100ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-FBGA (13x11)

70V24S20PFI8

IDT, Integrated Device Technology Inc

IC SRAM 64K PARALLEL 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 64Kb (4K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封裝: 100-LQFP

庫存2,832

SRAM

SRAM - Dual Port, Asynchronous

64Kb (4K x 16)

Parallel

-

20ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

SM662GXF-BFST

Silicon Motion, Inc.

IC FLASH 4TBIT EMMC 100BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (TLC)
Memory Size: 4Tbit
Memory Interface: eMMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -25°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 100-LBGA
Supplier Device Package: 100-BGA (14x18)

封裝: -

Request a Quote

FLASH

FLASH - NAND (TLC)

4Tbit

eMMC

-

-25°C ~ 85°C

Surface Mount

100-LBGA

100-BGA (14x18)

5962-8855202UA

Renesas Electronics Corporation

IC SRAM 256KBIT PARALLEL 28CDIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 256Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 28-CDIP (0.300", 7.62mm)
Supplier Device Package: 28-CDIP

封裝: -

Request a Quote

SRAM

SRAM - Synchronous

256Kbit

Parallel

-

70ns

70 ns

4.5V ~ 5.5V

-55°C ~ 125°C (TA)

Through Hole

28-CDIP (0.300", 7.62mm)

28-CDIP

25CS640T-E-ST

Microchip Technology

IC MEMORY EEPROM 64MB SPI

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

SM671PADLBFSS

Silicon Motion, Inc.

IC FLASH 320GBIT UFS3.1 153BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 320Gbit
Memory Interface: UFS3.1
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 153-TBGA
Supplier Device Package: 153-BGA (11.5x13)

封裝: -

Request a Quote

FLASH

FLASH - NAND (SLC)

320Gbit

UFS3.1

-

-40°C ~ 85°C

Surface Mount

153-TBGA

153-BGA (11.5x13)

AS6C1616C-45TIN

Alliance Memory, Inc.

LP-ASYNCH SRAM - C DIE

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Single Port, Asynchronous
Memory Size: 16Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

封裝: -

Request a Quote

SRAM

SRAM - Single Port, Asynchronous

16Mbit

Parallel

-

45ns

45 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I