頁 2103 - 記憶體 | 積體電路 (IC)

零件編號	製造商	描述	封裝	庫存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
DS28EL15Q-742+3TW	Maxim Integrated	IC EEPROM 512BIT 1WIRE Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 512b (256 x 2) Memory Interface: 1-Wire? Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 2µs Voltage - Supply: 1.71 V ~ 1.89 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存3,264	EEPROM	EEPROM	512b (256 x 2)	1-Wire?	-	-	2µs	1.71 V ~ 1.89 V	-40°C ~ 85°C (TA)	-	-	-
AS4C4M32S-6TCNTR	Alliance Memory, Inc.	IC SDRAM 128MBIT 166MHZ 86TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mb (4M x 32) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 2ns Access Time: 5.5ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 86-TFSOP (0.400", 10.16mm Width) Supplier Device Package: 86-TSOP II	封裝: 86-TFSOP (0.400", 10.16mm Width)	庫存6,976	DRAM	SDRAM	128Mb (4M x 32)	Parallel	166MHz	2ns	5.5ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	86-TFSOP (0.400", 10.16mm Width)	86-TSOP II
AS4C2M32S-6TIN	Alliance Memory, Inc.	IC SDRAM 64MBIT 166MHZ 86TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 64Mb (2M x 32) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 2ns Access Time: 5.5ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 86-TFSOP (0.400", 10.16mm Width) Supplier Device Package: 86-TSOP II	封裝: 86-TFSOP (0.400", 10.16mm Width)	庫存4,848	DRAM	SDRAM	64Mb (2M x 32)	Parallel	166MHz	2ns	5.5ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	86-TFSOP (0.400", 10.16mm Width)	86-TSOP II
DS1245X-70IND+	Maxim Integrated	IC NVSRAM 1MBIT PCM MODULE Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存7,200	-	-	-	-	-	-	-	-	-	-	-	-
MT48LC4M16A2P-75:G	Micron Technology Inc.	IC SDRAM 64MBIT 133MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 64Mb (4M x 16) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	封裝: 54-TSOP (0.400", 10.16mm Width)	庫存135,348	DRAM	SDRAM	64Mb (4M x 16)	Parallel	133MHz	15ns	5.4ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
IDT709199L7PF	IDT, Integrated Device Technology Inc	IC SRAM 1.125MBIT 7NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 1.125Mb (128K x 9) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封裝: 100-LQFP	庫存6,416	SRAM	SRAM - Dual Port, Synchronous	1.125Mb (128K x 9)	Parallel	-	-	7.5ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
CY7C1512V18-200BZI	Cypress Semiconductor Corp	IC SRAM 72MBIT 200MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II Memory Size: 72Mb (4M x 18) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (15x17)	封裝: 165-LBGA	庫存7,424	SRAM	SRAM - Synchronous, QDR II	72Mb (4M x 18)	Parallel	200MHz	-	-	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	165-LBGA	165-FBGA (15x17)
CY7C1313BV18-200BZC	Cypress Semiconductor Corp	IC SRAM 18MBIT 200MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II Memory Size: 18Mb (1M x 18) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	封裝: 165-LBGA	庫存4,608	SRAM	SRAM - Synchronous, QDR II	18Mb (1M x 18)	Parallel	200MHz	-	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
M29F400BT70N6E	Micron Technology Inc.	IC FLASH 4MBIT 70NS 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 4Mb (512K x 8, 256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP	封裝: 48-TFSOP (0.724", 18.40mm Width)	庫存5,888	FLASH	FLASH - NOR	4Mb (512K x 8, 256K x 16)	Parallel	-	70ns	70ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP
PCA8581CT/6,118	NXP	IC EEPROM 1KBIT 100KHZ 8SO Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8) Memory Interface: I2C Clock Frequency: 100kHz Write Cycle Time - Word, Page: 10ms Access Time: - Voltage - Supply: 2.5 V ~ 6.0 V Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存2,560	EEPROM	EEPROM	1Kb (128 x 8)	I2C	100kHz	10ms	-	2.5 V ~ 6.0 V	-25°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
CY7C1339G-133AXI	Cypress Semiconductor Corp	IC SRAM 4MBIT 133MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4Mb (128K x 32) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 4ns Voltage - Supply: 3.15 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	封裝: 100-LQFP	庫存5,216	SRAM	SRAM - Synchronous	4Mb (128K x 32)	Parallel	133MHz	-	4ns	3.15 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
MR2A16AYS35R	Everspin Technologies Inc.	IC MRAM 4MBIT 35NS 44TSOP Memory Type: Non-Volatile Memory Format: RAM Technology: MRAM (Magnetoresistive RAM) Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP2	封裝: 44-TSOP (0.400", 10.16mm Width)	庫存4,496	RAM	MRAM (Magnetoresistive RAM)	4Mb (256K x 16)	Parallel	-	35ns	35ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP2
CY7S1049G30-10VXIT	Cypress Semiconductor Corp	ASYNC SRAMS Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 2.2 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存2,304	SRAM	SRAM - Asynchronous	4Mb (512K x 8)	Parallel	-	10ns	10ns	2.2 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
IS62WV5128BLL-55TLI	ISSI, Integrated Silicon Solution Inc	IC SRAM 4MBIT 55NS 32TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 2.5 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 32-TSOP I	封裝: 32-TFSOP (0.724", 18.40mm Width)	庫存10,032	SRAM	SRAM - Asynchronous	4Mb (512K x 8)	Parallel	-	55ns	55ns	2.5 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	32-TFSOP (0.724", 18.40mm Width)	32-TSOP I
RM25C128C-LTAI-B	Adesto Technologies	IC EEPROM 128KBIT 10MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 128kb (64B Page Size) Memory Interface: SPI Clock Frequency: 10MHz Write Cycle Time - Word, Page: 100µs, 5ms Access Time: - Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封裝: 8-TSSOP (0.173", 4.40mm Width)	庫存7,296	EEPROM	EEPROM	128kb (64B Page Size)	SPI	10MHz	100µs, 5ms	-	1.65 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
CY7C1518KV18-250BZI	Cypress Semiconductor Corp	IC SRAM 72MBIT 250MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, DDR II Memory Size: 72Mb (4M x 18) Memory Interface: Parallel Clock Frequency: 250MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	封裝: 165-LBGA	庫存2,100	SRAM	SRAM - Synchronous, DDR II	72Mb (4M x 18)	Parallel	250MHz	-	-	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
S34ML08G101BHA000	Cypress Semiconductor Corp	IC FLASH 8GBIT 25NS 63BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 8Gb (1G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-BGA (11x9)	封裝: 63-VFBGA	庫存13,572	FLASH	FLASH - NAND	8Gb (1G x 8)	Parallel	-	25ns	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	63-VFBGA	63-BGA (11x9)
70V24L35PFI	IDT, Integrated Device Technology Inc	IC SRAM 64K PARALLEL 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 64Kb (4K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封裝: 100-LQFP	庫存4,816	SRAM	SRAM - Dual Port, Asynchronous	64Kb (4K x 16)	Parallel	-	35ns	35ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
GD25Q80CNIGR	GigaDevice Semiconductor (HK) Limited	IC FLASH 8MBIT SPI/QUAD 8USON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 8Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 120 MHz Write Cycle Time - Word, Page: 50µs, 2.4ms Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UDFN Exposed Pad Supplier Device Package: 8-USON (4x3)	封裝: -	Request a Quote	FLASH	FLASH - NOR	8Mbit	SPI - Quad I/O	120 MHz	50µs, 2.4ms	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-UDFN Exposed Pad	8-USON (4x3)
RMWV6416AGSD-5S2-HA0	Renesas Electronics Corporation	IC SRAM 64MBIT PAR 52TSOP II Memory Type: Volatile Memory Format: SRAM Technology: SRAM Memory Size: 64Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 52-TFSOP (0.350", 8.89mm Width) Supplier Device Package: 52-TSOP II	封裝: -	Request a Quote	SRAM	SRAM	64Mbit	Parallel	-	55ns	55 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	52-TFSOP (0.350", 8.89mm Width)	52-TSOP II
MR1A16ACMA35	Everspin Technologies Inc.	IC RAM 2MBIT SPI 48FBGA Memory Type: Non-Volatile Memory Format: RAM Technology: MRAM (Magnetoresistive RAM) Memory Size: 2Mbit Memory Interface: SPI Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-LFBGA Supplier Device Package: 48-FBGA (8x8)	封裝: -	庫存45	RAM	MRAM (Magnetoresistive RAM)	2Mbit	SPI	-	35ns	35 ns	3V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	48-LFBGA	48-FBGA (8x8)
M45PE10-VMP6TG	STMicroelectronics	FLASH, 128KX8, PDSO8 Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MB85RS256TYPNF-GS-BCE1	Fujitsu Semiconductor Memory Solution	256KBIT FRAM WITH SPI, AECQ100 1 Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 256Kbit Memory Interface: SPI Clock Frequency: 33 MHz Write Cycle Time - Word, Page: - Access Time: 13 ns Voltage - Supply: 1.8V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: -	Request a Quote	FRAM	FRAM (Ferroelectric RAM)	256Kbit	SPI	33 MHz	-	13 ns	1.8V ~ 3.6V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SM671PAB-AFSS	Silicon Motion, Inc.	IC FLASH 80GBIT UFS3.1 153BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 80Gbit Memory Interface: UFS3.1 Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 153-TFBGA Supplier Device Package: 153-BGA (11.5x13)	封裝: -	Request a Quote	FLASH	FLASH - NAND (SLC)	80Gbit	UFS3.1	-	-	-	-	-40°C ~ 85°C	Surface Mount	153-TFBGA	153-BGA (11.5x13)
AT25SL128A-SHE-T	Renesas Electronics Corporation	128 MBIT, 1.8V (1.7V TO 2V), -40 Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 128Mbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 150µs, 5ms Access Time: 6 ns Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	封裝: -	庫存11,784	FLASH	FLASH - NOR (SLC)	128Mbit	SPI - Quad I/O, QPI	133 MHz	150µs, 5ms	6 ns	1.7V ~ 2V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
W66BL6NBUAGJ-TR	Winbond Electronics	IC DRAM 2GBIT LVSTL 11 200WFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 2Gbit Memory Interface: LVSTL_11 Clock Frequency: 1.866 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.5 ns Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 200-WFBGA Supplier Device Package: 200-WFBGA (10x14.5)	封裝: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4	2Gbit	LVSTL_11	1.866 GHz	18ns	3.5 ns	1.06V ~ 1.17V, 1.7V ~ 1.95V	-40°C ~ 105°C (TC)	Surface Mount	200-WFBGA	200-WFBGA (10x14.5)
MT55L256V18P1T	Micron Technology Inc.	IC SRAM 4MBIT PAR 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - ZBT Memory Size: 4Mbit Memory Interface: Parallel Clock Frequency: 100 MHz Write Cycle Time - Word, Page: - Access Time: 5 ns Voltage - Supply: 3.135V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20.1)	封裝: -	Request a Quote	SRAM	SRAM - ZBT	4Mbit	Parallel	100 MHz	-	5 ns	3.135V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20.1)
CY100E484-5YCQ	Cypress Semiconductor Corp	4096 X4 ECL STATIC RAM Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

DS28EL15Q-742+3TW

Maxim Integrated

IC EEPROM 512BIT 1WIRE

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 512b (256 x 2)
Memory Interface: 1-Wire?
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 2µs
Voltage - Supply: 1.71 V ~ 1.89 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存3,264

EEPROM

512b (256 x 2)

1-Wire?

-

2µs

1.71 V ~ 1.89 V

-40°C ~ 85°C (TA)

-

AS4C4M32S-6TCNTR

Alliance Memory, Inc.

IC SDRAM 128MBIT 166MHZ 86TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (4M x 32)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 2ns
Access Time: 5.5ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 86-TFSOP (0.400", 10.16mm Width)
Supplier Device Package: 86-TSOP II

封裝: 86-TFSOP (0.400", 10.16mm Width)

庫存6,976

DRAM

SDRAM

128Mb (4M x 32)

Parallel

166MHz

2ns

5.5ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

86-TFSOP (0.400", 10.16mm Width)

86-TSOP II

AS4C2M32S-6TIN

Alliance Memory, Inc.

IC SDRAM 64MBIT 166MHZ 86TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mb (2M x 32)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 2ns
Access Time: 5.5ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 86-TFSOP (0.400", 10.16mm Width)
Supplier Device Package: 86-TSOP II

封裝: 86-TFSOP (0.400", 10.16mm Width)

庫存4,848

DRAM

SDRAM

64Mb (2M x 32)

Parallel

166MHz

2ns

5.5ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

86-TFSOP (0.400", 10.16mm Width)

86-TSOP II

DS1245X-70IND+

Maxim Integrated

IC NVSRAM 1MBIT PCM MODULE

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存7,200

-

MT48LC4M16A2P-75:G

Micron Technology Inc.

IC SDRAM 64MBIT 133MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mb (4M x 16)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

封裝: 54-TSOP (0.400", 10.16mm Width)

庫存135,348

DRAM

SDRAM

64Mb (4M x 16)

Parallel

133MHz

15ns

5.4ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

IDT709199L7PF

IDT, Integrated Device Technology Inc

IC SRAM 1.125MBIT 7NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 1.125Mb (128K x 9)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封裝: 100-LQFP

庫存6,416

SRAM

SRAM - Dual Port, Synchronous

1.125Mb (128K x 9)

Parallel

-

7.5ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

CY7C1512V18-200BZI

Cypress Semiconductor Corp

IC SRAM 72MBIT 200MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 72Mb (4M x 18)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (15x17)

封裝: 165-LBGA

庫存7,424

SRAM

SRAM - Synchronous, QDR II

72Mb (4M x 18)

Parallel

200MHz

-

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

165-LBGA

165-FBGA (15x17)

CY7C1313BV18-200BZC

Cypress Semiconductor Corp

IC SRAM 18MBIT 200MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 18Mb (1M x 18)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

封裝: 165-LBGA

庫存4,608

SRAM

SRAM - Synchronous, QDR II

18Mb (1M x 18)

Parallel

200MHz

-

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

M29F400BT70N6E

Micron Technology Inc.

IC FLASH 4MBIT 70NS 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 4Mb (512K x 8, 256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP

封裝: 48-TFSOP (0.724", 18.40mm Width)

庫存5,888

FLASH

FLASH - NOR

4Mb (512K x 8, 256K x 16)

Parallel

-

70ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP

PCA8581CT/6,118

NXP

IC EEPROM 1KBIT 100KHZ 8SO

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Memory Interface: I2C
Clock Frequency: 100kHz
Write Cycle Time - Word, Page: 10ms
Access Time: -
Voltage - Supply: 2.5 V ~ 6.0 V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存2,560

EEPROM

1Kb (128 x 8)

I2C

100kHz

10ms

-

2.5 V ~ 6.0 V

-25°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

CY7C1339G-133AXI

Cypress Semiconductor Corp

IC SRAM 4MBIT 133MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4Mb (128K x 32)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 4ns
Voltage - Supply: 3.15 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

封裝: 100-LQFP

庫存5,216

SRAM

SRAM - Synchronous

4Mb (128K x 32)

Parallel

133MHz

-

4ns

3.15 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

MR2A16AYS35R

Everspin Technologies Inc.

IC MRAM 4MBIT 35NS 44TSOP

Memory Type: Non-Volatile
Memory Format: RAM
Technology: MRAM (Magnetoresistive RAM)
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP2

封裝: 44-TSOP (0.400", 10.16mm Width)

庫存4,496

RAM

MRAM (Magnetoresistive RAM)

4Mb (256K x 16)

Parallel

-

35ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP2

CY7S1049G30-10VXIT

Cypress Semiconductor Corp

ASYNC SRAMS

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 2.2 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存2,304

SRAM

SRAM - Asynchronous

4Mb (512K x 8)

Parallel

-

10ns

2.2 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

IS62WV5128BLL-55TLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT 55NS 32TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP I

封裝: 32-TFSOP (0.724", 18.40mm Width)

庫存10,032

SRAM

SRAM - Asynchronous

4Mb (512K x 8)

Parallel

-

55ns

2.5 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

32-TFSOP (0.724", 18.40mm Width)

32-TSOP I

RM25C128C-LTAI-B

Adesto Technologies

IC EEPROM 128KBIT 10MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 128kb (64B Page Size)
Memory Interface: SPI
Clock Frequency: 10MHz
Write Cycle Time - Word, Page: 100µs, 5ms
Access Time: -
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封裝: 8-TSSOP (0.173", 4.40mm Width)

庫存7,296

EEPROM

128kb (64B Page Size)

SPI

10MHz

100µs, 5ms

-

1.65 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

CY7C1518KV18-250BZI

Cypress Semiconductor Corp

IC SRAM 72MBIT 250MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, DDR II
Memory Size: 72Mb (4M x 18)
Memory Interface: Parallel
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

封裝: 165-LBGA

庫存2,100

SRAM

SRAM - Synchronous, DDR II

72Mb (4M x 18)

Parallel

250MHz

-

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

S34ML08G101BHA000

Cypress Semiconductor Corp

IC FLASH 8GBIT 25NS 63BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 8Gb (1G x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-BGA (11x9)

封裝: 63-VFBGA

庫存13,572

FLASH

FLASH - NAND

8Gb (1G x 8)

Parallel

-

25ns

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

63-VFBGA

63-BGA (11x9)

70V24L35PFI

IDT, Integrated Device Technology Inc

IC SRAM 64K PARALLEL 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 64Kb (4K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封裝: 100-LQFP

庫存4,816

SRAM

SRAM - Dual Port, Asynchronous

64Kb (4K x 16)

Parallel

-

35ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

GD25Q80CNIGR

GigaDevice Semiconductor (HK) Limited

IC FLASH 8MBIT SPI/QUAD 8USON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 120 MHz
Write Cycle Time - Word, Page: 50µs, 2.4ms
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UDFN Exposed Pad
Supplier Device Package: 8-USON (4x3)

封裝: -

Request a Quote

FLASH

FLASH - NOR

8Mbit

SPI - Quad I/O

120 MHz

50µs, 2.4ms

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-UDFN Exposed Pad

8-USON (4x3)

RMWV6416AGSD-5S2-HA0

Renesas Electronics Corporation

IC SRAM 64MBIT PAR 52TSOP II

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 64Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 52-TFSOP (0.350", 8.89mm Width)
Supplier Device Package: 52-TSOP II

封裝: -

Request a Quote

SRAM

64Mbit

Parallel

-

55ns

55 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

52-TFSOP (0.350", 8.89mm Width)

52-TSOP II

MR1A16ACMA35

Everspin Technologies Inc.

IC RAM 2MBIT SPI 48FBGA

Memory Type: Non-Volatile
Memory Format: RAM
Technology: MRAM (Magnetoresistive RAM)
Memory Size: 2Mbit
Memory Interface: SPI
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-LFBGA
Supplier Device Package: 48-FBGA (8x8)

封裝: -

庫存45

RAM

MRAM (Magnetoresistive RAM)

2Mbit

SPI

-

35ns

35 ns

3V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

48-LFBGA

48-FBGA (8x8)

M45PE10-VMP6TG

STMicroelectronics

FLASH, 128KX8, PDSO8

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

MB85RS256TYPNF-GS-BCE1

Fujitsu Semiconductor Memory Solution

256KBIT FRAM WITH SPI, AECQ100 1

Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 256Kbit
Memory Interface: SPI
Clock Frequency: 33 MHz
Write Cycle Time - Word, Page: -
Access Time: 13 ns
Voltage - Supply: 1.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: -

Request a Quote

FRAM

FRAM (Ferroelectric RAM)

256Kbit

SPI

33 MHz

-

13 ns

1.8V ~ 3.6V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

SM671PAB-AFSS

Silicon Motion, Inc.

IC FLASH 80GBIT UFS3.1 153BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 80Gbit
Memory Interface: UFS3.1
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 153-TFBGA
Supplier Device Package: 153-BGA (11.5x13)

封裝: -

Request a Quote

FLASH

FLASH - NAND (SLC)

80Gbit

UFS3.1

-

-40°C ~ 85°C

Surface Mount

153-TFBGA

153-BGA (11.5x13)

AT25SL128A-SHE-T

Renesas Electronics Corporation

128 MBIT, 1.8V (1.7V TO 2V), -40

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 128Mbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 150µs, 5ms
Access Time: 6 ns
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

封裝: -

庫存11,784

FLASH

FLASH - NOR (SLC)

128Mbit

SPI - Quad I/O, QPI

133 MHz

150µs, 5ms

6 ns

1.7V ~ 2V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

W66BL6NBUAGJ-TR

Winbond Electronics

IC DRAM 2GBIT LVSTL 11 200WFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 2Gbit
Memory Interface: LVSTL_11
Clock Frequency: 1.866 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.5 ns
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-WFBGA
Supplier Device Package: 200-WFBGA (10x14.5)

封裝: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR4

2Gbit

LVSTL_11

1.866 GHz

18ns

3.5 ns

1.06V ~ 1.17V, 1.7V ~ 1.95V

-40°C ~ 105°C (TC)

Surface Mount

200-WFBGA

200-WFBGA (10x14.5)

MT55L256V18P1T

Micron Technology Inc.

IC SRAM 4MBIT PAR 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - ZBT
Memory Size: 4Mbit
Memory Interface: Parallel
Clock Frequency: 100 MHz
Write Cycle Time - Word, Page: -
Access Time: 5 ns
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20.1)

封裝: -

Request a Quote

SRAM

SRAM - ZBT

4Mbit

Parallel

100 MHz

-

5 ns

3.135V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20.1)

CY100E484-5YCQ

Cypress Semiconductor Corp

4096 X4 ECL STATIC RAM

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-