頁 2089 - 記憶體 | 積體電路 (IC)

零件編號	製造商	描述	封裝	庫存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT42L128M32D2MH-25 IT:A	Micron Technology Inc.	IC SDRAM 4GBIT 400MHZ 134FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 4Gb (128M x 32) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.3 V Operating Temperature: -25°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 134-VFBGA Supplier Device Package: 134-FBGA (11x11.5)	封裝: 134-VFBGA	庫存5,088	DRAM	SDRAM - Mobile LPDDR2	4Gb (128M x 32)	Parallel	400MHz	-	-	1.14 V ~ 1.3 V	-25°C ~ 85°C (TC)	Surface Mount	134-VFBGA	134-FBGA (11x11.5)
IDT71P72604S167BQG	IDT, Integrated Device Technology Inc	IC SRAM 18MBIT 167MHZ 165CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II Memory Size: 18Mb (512K x 36) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: 8.4ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-CABGA (13x15)	封裝: 165-TBGA	庫存3,072	SRAM	SRAM - Synchronous, QDR II	18Mb (512K x 36)	Parallel	167MHz	-	8.4ns	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-TBGA	165-CABGA (13x15)
IS45S32200E-7BLA1-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 64MBIT 143MHZ 90BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 64Mb (2M x 32) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.5ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	封裝: 90-TFBGA	庫存5,024	DRAM	SDRAM	64Mb (2M x 32)	Parallel	143MHz	-	5.5ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
IS42S16320B-7TL	ISSI, Integrated Silicon Solution Inc	IC SDRAM 512MBIT 143MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	封裝: 54-TSOP (0.400", 10.16mm Width)	庫存220,452	DRAM	SDRAM	512Mb (32M x 16)	Parallel	143MHz	-	5.4ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
AT27LV512A-90JI	Microchip Technology	IC OTP 512KBIT 90NS 32PLCC Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 512Kb (64K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 90ns Voltage - Supply: 3 V ~ 3.6 V, 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	封裝: 32-LCC (J-Lead)	庫存3,072	EPROM	EPROM - OTP	512Kb (64K x 8)	Parallel	-	-	90ns	3 V ~ 3.6 V, 4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	32-LCC (J-Lead)	32-PLCC
AT25160-10PI	Microchip Technology	IC EEPROM 16KBIT 3MHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: SPI Clock Frequency: 3MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	封裝: 8-DIP (0.300", 7.62mm)	庫存2,640	EEPROM	EEPROM	16Kb (2K x 8)	SPI	3MHz	5ms	-	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
IS61VPS204836B-250TQLI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 72MBIT 250MHZ 100LQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 72Mb (2M x 36) Memory Interface: Parallel Clock Frequency: 250MHz Write Cycle Time - Word, Page: - Access Time: 2.8ns Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x20)	封裝: 100-LQFP	庫存3,248	SRAM	SRAM - Synchronous	72Mb (2M x 36)	Parallel	250MHz	-	2.8ns	2.375 V ~ 2.625 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-LQFP (14x20)
71V3556SA100BGG8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 100MHZ 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 100MHz Write Cycle Time - Word, Page: - Access Time: 5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	封裝: 119-BGA	庫存6,704	SRAM	SRAM - Synchronous ZBT	4.5Mb (128K x 36)	Parallel	100MHz	-	5ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
MB85RS128APNF-G-JNE1	Fujitsu Electronics America, Inc.	IC FRAM 128KBIT 25MHZ 8SOP Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 128Kb (16K x 8) Memory Interface: SPI Clock Frequency: 25MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存7,408	FRAM	FRAM (Ferroelectric RAM)	128Kb (16K x 8)	SPI	25MHz	-	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
23LC512T-E/SN	Microchip Technology	IC SRAM 512KBIT 20MHZ 8SOIC Memory Type: Volatile Memory Format: SRAM Technology: SRAM Memory Size: 512Kb (64K x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 16MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存4,928	SRAM	SRAM	512Kb (64K x 8)	SPI - Quad I/O	16MHz	-	-	2.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
25LC080B-E/MS	Microchip Technology	IC EEPROM 8KBIT 10MHZ 8MSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kb (1K x 8) Memory Interface: SPI Clock Frequency: 10MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	封裝: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	庫存6,560	EEPROM	EEPROM	8Kb (1K x 8)	SPI	10MHz	5ms	-	2.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
BR24S16FVJ-WE2	Rohm Semiconductor	IC EEPROM 16KBIT 400KHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-TSSOP-BJ	封裝: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	庫存20,280	EEPROM	EEPROM	16Kb (2K x 8)	I2C	400kHz	5ms	-	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-TSSOP-BJ
93C46BT-E/ST	Microchip Technology	IC EEPROM 1KBIT 2MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (64 x 16) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 2ms Access Time: - Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封裝: 8-TSSOP (0.173", 4.40mm Width)	庫存6,768	EEPROM	EEPROM	1Kb (64 x 16)	SPI	2MHz	2ms	-	4.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
93LC56CT-I/ST	Microchip Technology	IC EEPROM 2KBIT 3MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8, 128 x 16) Memory Interface: SPI Clock Frequency: 3MHz Write Cycle Time - Word, Page: 6ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封裝: 8-TSSOP (0.173", 4.40mm Width)	庫存6,496	EEPROM	EEPROM	2Kb (256 x 8, 128 x 16)	SPI	3MHz	6ms	-	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
M95128-DRMN3TP/K	STMicroelectronics	IC EEPROM 128KBIT 20MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 128Kb (16K x 8) Memory Interface: SPI Clock Frequency: 20MHz Write Cycle Time - Word, Page: 4ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存5,984	EEPROM	EEPROM	128Kb (16K x 8)	SPI	20MHz	4ms	-	1.8 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IS42RM32100D-75BLI	ISSI, Integrated Silicon Solution Inc	IC DRAM 32M PARALLEL 133MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile Memory Size: 32Mb (1M x 32) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 6ns Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	封裝: 90-TFBGA	庫存2,256	DRAM	SDRAM - Mobile	32Mb (1M x 32)	Parallel	133MHz	-	6ns	2.3 V ~ 2.7 V	-40°C ~ 85°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
EDFA164A2PP-GD-F-R	Micron Technology Inc.	IC DRAM 16G PARALLEL 800MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 16Gb (256M x 64) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存5,760	DRAM	SDRAM - Mobile LPDDR3	16Gb (256M x 64)	Parallel	800MHz	-	-	1.14 V ~ 1.95 V	-30°C ~ 85°C (TC)	-	-	-
7133LA35JI8	IDT, Integrated Device Technology Inc	IC SRAM 32K PARALLEL 68PLCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 32Kb (2K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 68-LCC (J-Lead) Supplier Device Package: 68-PLCC (24.21x24.21)	封裝: 68-LCC (J-Lead)	庫存6,848	SRAM	SRAM - Dual Port, Asynchronous	32Kb (2K x 16)	Parallel	-	35ns	35ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	68-LCC (J-Lead)	68-PLCC (24.21x24.21)
MT29TZZZ7D7DKLAH-107 W.9B7 TR	Micron Technology Inc.	ALL IN ONE MCP 280G Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存2,192	-	-	-	-	-	-	-	-	-	-	-	-
W25Q128JVSIN	Winbond Electronics	SPIFLASH, 3V, 128M-BIT, 4KB UNIF Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 128Mbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 3ms Access Time: 6 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	封裝: -	Request a Quote	FLASH	FLASH - NOR (SLC)	128Mbit	SPI - Quad I/O, QPI	133 MHz	3ms	6 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
W632GG6NB15I-TR	Winbond Electronics	IC DRAM 2GBIT SSTL 15 96VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 2Gbit Memory Interface: SSTL_15 Clock Frequency: 667 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-VFBGA Supplier Device Package: 96-VFBGA (7.5x13)	封裝: -	Request a Quote	DRAM	SDRAM - DDR3	2Gbit	SSTL_15	667 MHz	15ns	20 ns	1.425V ~ 1.575V	-40°C ~ 95°C (TC)	Surface Mount	96-VFBGA	96-VFBGA (7.5x13)
W25R128JWPIQ	Winbond Electronics	IC FLASH 128MBIT SPI 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mbit Memory Interface: SPI Clock Frequency: 104 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x5)	封裝: -	庫存1,356	FLASH	FLASH - NOR	128Mbit	SPI	104 MHz	-	-	1.7V ~ 1.95V	-40°C ~ 85°C	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x5)
W29N02GVBIAA-TR	Winbond Electronics	2G-BIT SLC NAND FLASH, 3V, 8-BIT Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 2Gbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-VFBGA (9x11)	封裝: -	Request a Quote	FLASH	FLASH - NAND (SLC)	2Gbit	Parallel	-	25ns	25 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	63-VFBGA	63-VFBGA (9x11)
W956D8MBYA5I	Winbond Electronics	IC DRAM 64MBIT HYPERBUS 24TFBGA Memory Type: Volatile Memory Format: DRAM Technology: HyperRAM Memory Size: 64Mbit Memory Interface: HyperBus Clock Frequency: 200 MHz Write Cycle Time - Word, Page: 35ns Access Time: 35 ns Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-TFBGA (6x8)	封裝: -	庫存639	DRAM	HyperRAM	64Mbit	HyperBus	200 MHz	35ns	35 ns	1.7V ~ 2V	-40°C ~ 85°C (TC)	Surface Mount	24-TBGA	24-TFBGA (6x8)
71V3577YS75PFG	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT PARALLEL 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, SDR Memory Size: 4.5Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 7.5 ns Voltage - Supply: 3.135V ~ 3.465V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封裝: -	Request a Quote	SRAM	SRAM - Synchronous, SDR	4.5Mbit	Parallel	-	-	7.5 ns	3.135V ~ 3.465V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
W971GG8NB-25	Winbond Electronics	IC DRAM 1GBIT SSTL 18 60VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gbit Memory Interface: SSTL_18 Clock Frequency: 400 MHz Write Cycle Time - Word, Page: 15ns Access Time: 57.5 ns Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 60-VFBGA Supplier Device Package: 60-VFBGA (8x9.5)	封裝: -	Request a Quote	DRAM	SDRAM - DDR2	1Gbit	SSTL_18	400 MHz	15ns	57.5 ns	1.7V ~ 1.9V	0°C ~ 85°C (TC)	Surface Mount	60-VFBGA	60-VFBGA (8x9.5)
8-611-200-857	Infineon Technologies	IC Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT40A512M16LY-062E-AT-E-TR	Micron Technology Inc.	IC DRAM 8GBIT 1.6GHZ 96FBGA Memory Type: Non-Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 8Gbit Memory Interface: - Clock Frequency: 1.6 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (7.5x13.5)	封裝: -	Request a Quote	DRAM	SDRAM - DDR4	8Gbit	-	1.6 GHz	-	-	-	-40°C ~ 105°C (TC)	Surface Mount	96-TFBGA	96-FBGA (7.5x13.5)

MT42L128M32D2MH-25 IT:A

Micron Technology Inc.

IC SDRAM 4GBIT 400MHZ 134FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 4Gb (128M x 32)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.3 V
Operating Temperature: -25°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-VFBGA
Supplier Device Package: 134-FBGA (11x11.5)

封裝: 134-VFBGA

庫存5,088

DRAM

SDRAM - Mobile LPDDR2

4Gb (128M x 32)

Parallel

400MHz

-

1.14 V ~ 1.3 V

-25°C ~ 85°C (TC)

Surface Mount

134-VFBGA

134-FBGA (11x11.5)

IDT71P72604S167BQG

IDT, Integrated Device Technology Inc

IC SRAM 18MBIT 167MHZ 165CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 18Mb (512K x 36)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: 8.4ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-CABGA (13x15)

封裝: 165-TBGA

庫存3,072

SRAM

SRAM - Synchronous, QDR II

18Mb (512K x 36)

Parallel

167MHz

-

8.4ns

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-TBGA

165-CABGA (13x15)

IS45S32200E-7BLA1-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 64MBIT 143MHZ 90BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mb (2M x 32)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.5ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

封裝: 90-TFBGA

庫存5,024

DRAM

SDRAM

64Mb (2M x 32)

Parallel

143MHz

-

5.5ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

IS42S16320B-7TL

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 143MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

封裝: 54-TSOP (0.400", 10.16mm Width)

庫存220,452

DRAM

SDRAM

512Mb (32M x 16)

Parallel

143MHz

-

5.4ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

AT27LV512A-90JI

Microchip Technology

IC OTP 512KBIT 90NS 32PLCC

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 512Kb (64K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 90ns
Voltage - Supply: 3 V ~ 3.6 V, 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

封裝: 32-LCC (J-Lead)

庫存3,072

EPROM

EPROM - OTP

512Kb (64K x 8)

Parallel

-

90ns

3 V ~ 3.6 V, 4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

32-LCC (J-Lead)

32-PLCC

AT25160-10PI

Microchip Technology

IC EEPROM 16KBIT 3MHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: SPI
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

封裝: 8-DIP (0.300", 7.62mm)

庫存2,640

EEPROM

16Kb (2K x 8)

SPI

3MHz

5ms

-

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

IS61VPS204836B-250TQLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 72MBIT 250MHZ 100LQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 72Mb (2M x 36)
Memory Interface: Parallel
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: -
Access Time: 2.8ns
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x20)

封裝: 100-LQFP

庫存3,248

SRAM

SRAM - Synchronous

72Mb (2M x 36)

Parallel

250MHz

-

2.8ns

2.375 V ~ 2.625 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-LQFP (14x20)

71V3556SA100BGG8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 100MHZ 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: -
Access Time: 5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

封裝: 119-BGA

庫存6,704

SRAM

SRAM - Synchronous ZBT

4.5Mb (128K x 36)

Parallel

100MHz

-

5ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

MB85RS128APNF-G-JNE1

Fujitsu Electronics America, Inc.

IC FRAM 128KBIT 25MHZ 8SOP

Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 128Kb (16K x 8)
Memory Interface: SPI
Clock Frequency: 25MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存7,408

FRAM

FRAM (Ferroelectric RAM)

128Kb (16K x 8)

SPI

25MHz

-

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

23LC512T-E/SN

Microchip Technology

IC SRAM 512KBIT 20MHZ 8SOIC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 512Kb (64K x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 16MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存4,928

SRAM

512Kb (64K x 8)

SPI - Quad I/O

16MHz

-

2.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

25LC080B-E/MS

Microchip Technology

IC EEPROM 8KBIT 10MHZ 8MSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kb (1K x 8)
Memory Interface: SPI
Clock Frequency: 10MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

封裝: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

庫存6,560

EEPROM

8Kb (1K x 8)

SPI

10MHz

5ms

-

2.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-MSOP

BR24S16FVJ-WE2

Rohm Semiconductor

IC EEPROM 16KBIT 400KHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-TSSOP-BJ

封裝: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

庫存20,280

EEPROM

16Kb (2K x 8)

I2C

400kHz

5ms

-

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-TSSOP-BJ

93C46BT-E/ST

Microchip Technology

IC EEPROM 1KBIT 2MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (64 x 16)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 2ms
Access Time: -
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封裝: 8-TSSOP (0.173", 4.40mm Width)

庫存6,768

EEPROM

1Kb (64 x 16)

SPI

2MHz

2ms

-

4.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

93LC56CT-I/ST

Microchip Technology

IC EEPROM 2KBIT 3MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8, 128 x 16)
Memory Interface: SPI
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 6ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封裝: 8-TSSOP (0.173", 4.40mm Width)

庫存6,496

EEPROM

2Kb (256 x 8, 128 x 16)

SPI

3MHz

6ms

-

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

M95128-DRMN3TP/K

STMicroelectronics

IC EEPROM 128KBIT 20MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 128Kb (16K x 8)
Memory Interface: SPI
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 4ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存5,984

EEPROM

128Kb (16K x 8)

SPI

20MHz

4ms

-

1.8 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IS42RM32100D-75BLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 32M PARALLEL 133MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile
Memory Size: 32Mb (1M x 32)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 6ns
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

封裝: 90-TFBGA

庫存2,256

DRAM

SDRAM - Mobile

32Mb (1M x 32)

Parallel

133MHz

-

6ns

2.3 V ~ 2.7 V

-40°C ~ 85°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

EDFA164A2PP-GD-F-R

Micron Technology Inc.

IC DRAM 16G PARALLEL 800MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 16Gb (256M x 64)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存5,760

DRAM

SDRAM - Mobile LPDDR3

16Gb (256M x 64)

Parallel

800MHz

-

1.14 V ~ 1.95 V

-30°C ~ 85°C (TC)

-

7133LA35JI8

IDT, Integrated Device Technology Inc

IC SRAM 32K PARALLEL 68PLCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 32Kb (2K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 68-LCC (J-Lead)
Supplier Device Package: 68-PLCC (24.21x24.21)

封裝: 68-LCC (J-Lead)

庫存6,848

SRAM

SRAM - Dual Port, Asynchronous

32Kb (2K x 16)

Parallel

-

35ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

68-LCC (J-Lead)

68-PLCC (24.21x24.21)

MT29TZZZ7D7DKLAH-107 W.9B7 TR

Micron Technology Inc.

ALL IN ONE MCP 280G

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存2,192

-

W25Q128JVSIN

Winbond Electronics

SPIFLASH, 3V, 128M-BIT, 4KB UNIF

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 128Mbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 3ms
Access Time: 6 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

封裝: -

Request a Quote

FLASH

FLASH - NOR (SLC)

128Mbit

SPI - Quad I/O, QPI

133 MHz

3ms

6 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

W632GG6NB15I-TR

Winbond Electronics

IC DRAM 2GBIT SSTL 15 96VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gbit
Memory Interface: SSTL_15
Clock Frequency: 667 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-VFBGA
Supplier Device Package: 96-VFBGA (7.5x13)

封裝: -

Request a Quote

DRAM

SDRAM - DDR3

2Gbit

SSTL_15

667 MHz

15ns

20 ns

1.425V ~ 1.575V

-40°C ~ 95°C (TC)

Surface Mount

96-VFBGA

96-VFBGA (7.5x13)

W25R128JWPIQ

Winbond Electronics

IC FLASH 128MBIT SPI 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mbit
Memory Interface: SPI
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x5)

封裝: -

庫存1,356

FLASH

FLASH - NOR

128Mbit

SPI

104 MHz

-

1.7V ~ 1.95V

-40°C ~ 85°C

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x5)

W29N02GVBIAA-TR

Winbond Electronics

2G-BIT SLC NAND FLASH, 3V, 8-BIT

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 2Gbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA (9x11)

封裝: -

Request a Quote

FLASH

FLASH - NAND (SLC)

2Gbit

Parallel

-

25ns

25 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

63-VFBGA

63-VFBGA (9x11)

W956D8MBYA5I

Winbond Electronics

IC DRAM 64MBIT HYPERBUS 24TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: HyperRAM
Memory Size: 64Mbit
Memory Interface: HyperBus
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: 35ns
Access Time: 35 ns
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-TFBGA (6x8)

封裝: -

庫存639

DRAM

HyperRAM

64Mbit

HyperBus

200 MHz

35ns

35 ns

1.7V ~ 2V

-40°C ~ 85°C (TC)

Surface Mount

24-TBGA

24-TFBGA (6x8)

71V3577YS75PFG

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT PARALLEL 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, SDR
Memory Size: 4.5Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 7.5 ns
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封裝: -

Request a Quote

SRAM

SRAM - Synchronous, SDR

4.5Mbit

Parallel

-

7.5 ns

3.135V ~ 3.465V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

W971GG8NB-25

Winbond Electronics

IC DRAM 1GBIT SSTL 18 60VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gbit
Memory Interface: SSTL_18
Clock Frequency: 400 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 57.5 ns
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 60-VFBGA
Supplier Device Package: 60-VFBGA (8x9.5)

封裝: -

Request a Quote

DRAM

SDRAM - DDR2

1Gbit

SSTL_18

400 MHz

15ns

57.5 ns

1.7V ~ 1.9V

0°C ~ 85°C (TC)

Surface Mount

60-VFBGA

60-VFBGA (8x9.5)

8-611-200-857

Infineon Technologies

IC

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

MT40A512M16LY-062E-AT-E-TR

Micron Technology Inc.

IC DRAM 8GBIT 1.6GHZ 96FBGA

Memory Type: Non-Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 8Gbit
Memory Interface: -
Clock Frequency: 1.6 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (7.5x13.5)

封裝: -

Request a Quote

DRAM

SDRAM - DDR4

8Gbit

-

1.6 GHz

-

-40°C ~ 105°C (TC)

Surface Mount

96-TFBGA

96-FBGA (7.5x13.5)