頁 2058 - 記憶體 | 積體電路 (IC)

零件編號	製造商	描述	封裝	庫存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT49H16M18CBM-25 IT:B	Micron Technology Inc.	IC RLDRAM 288MBIT 400MHZ 144UBGA Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 288Mb (16M x 18) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 144-TFBGA Supplier Device Package: 144-µBGA (18.5x11)	封裝: 144-TFBGA	庫存2,288	DRAM	DRAM	288Mb (16M x 18)	Parallel	400MHz	-	20ns	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	144-TFBGA	144-µBGA (18.5x11)
M48Z512AV-85PM1	STMicroelectronics	IC NVSRAM 4MBIT 85NS 32DIP Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 85ns Access Time: 85ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 32-DIP Module (0.600", 15.24mm) Supplier Device Package: 32-PMDIP Module	封裝: 32-DIP Module (0.600", 15.24mm)	庫存4,080	NVSRAM	NVSRAM (Non-Volatile SRAM)	4Mb (512K x 8)	Parallel	-	85ns	85ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Through Hole	32-DIP Module (0.600", 15.24mm)	32-PMDIP Module
IDT71V65803S133PF	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 133MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 9Mb (512K x 18) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 4.2ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封裝: 100-LQFP	庫存2,656	SRAM	SRAM - Synchronous ZBT	9Mb (512K x 18)	Parallel	133MHz	-	4.2ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
MT48H4M16LFB4-75:H TR	Micron Technology Inc.	IC SDRAM 64MBIT 133MHZ 54VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPSDR Memory Size: 64Mb (4M x 16) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: 15ns Access Time: 6ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-VFBGA Supplier Device Package: 54-VFBGA (8x8)	封裝: 54-VFBGA	庫存5,296	DRAM	SDRAM - Mobile LPSDR	64Mb (4M x 16)	Parallel	133MHz	15ns	6ns	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	54-VFBGA	54-VFBGA (8x8)
CY7C1021BN-15VXIT	Cypress Semiconductor Corp	IC SRAM 1MBIT 15NS 44SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (64K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 15ns Access Time: 15ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 44-SOJ	封裝: 44-BSOJ (0.400", 10.16mm Width)	庫存2,864	SRAM	SRAM - Asynchronous	1Mb (64K x 16)	Parallel	-	15ns	15ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	44-BSOJ (0.400", 10.16mm Width)	44-SOJ
MT48V4M32LFB5-8:G	Micron Technology Inc.	IC SDRAM 128MBIT 125MHZ 90VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPSDR Memory Size: 128Mb (4M x 32) Memory Interface: Parallel Clock Frequency: 125MHz Write Cycle Time - Word, Page: 15ns Access Time: 7ns Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 90-VFBGA Supplier Device Package: 90-VFBGA (8x13)	封裝: 90-VFBGA	庫存6,576	DRAM	SDRAM - Mobile LPSDR	128Mb (4M x 32)	Parallel	125MHz	15ns	7ns	2.3 V ~ 2.7 V	0°C ~ 70°C (TA)	Surface Mount	90-VFBGA	90-VFBGA (8x13)
DS2430A/T&R	Maxim Integrated	IC EEPROM 256BIT 1WIRE TO92-3 Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256b (32 x 8) Memory Interface: 1-Wire? Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 15µs Voltage - Supply: - Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	封裝: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	庫存4,672	EEPROM	EEPROM	256b (32 x 8)	1-Wire?	-	-	15µs	-	-40°C ~ 85°C (TA)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
71T75802S150BGI8	IDT, Integrated Device Technology Inc	IC SRAM 18MBIT 150MHZ 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 18Mb (1M x 18) Memory Interface: Parallel Clock Frequency: 150MHz Write Cycle Time - Word, Page: - Access Time: 3.8ns Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	封裝: 119-BGA	庫存5,120	SRAM	SRAM - Synchronous ZBT	18Mb (1M x 18)	Parallel	150MHz	-	3.8ns	2.375 V ~ 2.625 V	-40°C ~ 85°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
71V67803S166BG	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 166MHZ 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 9Mb (512K x 18) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 3.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	封裝: 119-BGA	庫存5,888	SRAM	SRAM - Synchronous	9Mb (512K x 18)	Parallel	166MHz	-	3.5ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
IS64LPS12832A-200TQLA3-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 4MBIT 200MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4Mb (128K x 32) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3.1ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	封裝: 100-LQFP	庫存7,552	SRAM	SRAM - Synchronous	4Mb (128K x 32)	Parallel	200MHz	-	3.1ns	3.135 V ~ 3.465 V	-40°C ~ 125°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
CY62128EV30LL-45ZAXAT	Cypress Semiconductor Corp	IC SRAM 1MBIT 45NS 32STSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 2.2 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.465", 11.80mm Width) Supplier Device Package: 32-sTSOP	封裝: 32-TFSOP (0.465", 11.80mm Width)	庫存2,992	SRAM	SRAM - Asynchronous	1Mb (128K x 8)	Parallel	-	45ns	45ns	2.2 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	32-TFSOP (0.465", 11.80mm Width)	32-sTSOP
AT88SC0808C-MJTG	Microchip Technology	IC EEPROM 8KBIT 5MHZ M2J Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kb (1K x 8) Memory Interface: I2C Clock Frequency: 5MHz Write Cycle Time - Word, Page: 5ms Access Time: 35µs Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: M2 J, Smart Card Module (TWI) Supplier Device Package: M2 - J Module (TWI)	封裝: M2 J, Smart Card Module (TWI)	庫存6,384	EEPROM	EEPROM	8Kb (1K x 8)	I2C	5MHz	5ms	35µs	2.7 V ~ 5.5 V	0°C ~ 70°C (TC)	Surface Mount	M2 J, Smart Card Module (TWI)	M2 - J Module (TWI)
BR25S640FVJ-WE2	Rohm Semiconductor	IC EEPROM 64KBIT 20MHZ 8SOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kb (8K x 8) Memory Interface: SPI Clock Frequency: 20MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-TSSOP-BJ	封裝: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	庫存2,784	EEPROM	EEPROM	64Kb (8K x 8)	SPI	20MHz	5ms	-	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-TSSOP-BJ
93LC56BT-I/MC	Microchip Technology	IC EEPROM 2KBIT 2MHZ 8DFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (128 x 16) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 6ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-VFDFN Exposed Pad Supplier Device Package: 8-DFN (2x3)	封裝: 8-VFDFN Exposed Pad	庫存4,352	EEPROM	EEPROM	2Kb (128 x 16)	SPI	2MHz	6ms	-	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-VFDFN Exposed Pad	8-DFN (2x3)
24LC01BH-I/MS	Microchip Technology	IC EEPROM 1KBIT 400KHZ 8MSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	封裝: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	庫存4,032	EEPROM	EEPROM	1Kb (128 x 8)	I2C	400kHz	5ms	900ns	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
CAT24C04YI-GT3JN	ON Semiconductor	IC EEPROM 4KBIT 400KHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (512 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封裝: 8-TSSOP (0.173", 4.40mm Width)	庫存2,064	EEPROM	EEPROM	4Kb (512 x 8)	I2C	400kHz	5ms	900ns	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
BR24T01FVJ-WE2	Rohm Semiconductor	IC EEPROM 1KBIT 400KHZ 8TSSOP-BJ Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.6 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-TSSOP-BJ	封裝: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	庫存6,688	EEPROM	EEPROM	1Kb (128 x 8)	I2C	400kHz	5ms	-	1.6 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-TSSOP-BJ
47C16-E/P	Microchip Technology	IC EERAM 16KBIT 1MHZ 8DIP Memory Type: Non-Volatile Memory Format: EERAM Technology: EEPROM, SRAM Memory Size: 16Kb (2K x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 1ms Access Time: 400ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	封裝: 8-DIP (0.300", 7.62mm)	庫存19,812	EERAM	EEPROM, SRAM	16Kb (2K x 8)	I2C	1MHz	1ms	400ns	4.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
BR24G01NUX-3TTR	Rohm Semiconductor	IC EEPROM 1KBIT 400KHZ 8VSON Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.6 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: VSON008X2030	封裝: 8-UFDFN Exposed Pad	庫存5,072	EEPROM	EEPROM	1Kb (128 x 8)	I2C	400kHz	5ms	-	1.6 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-UFDFN Exposed Pad	VSON008X2030
SST25WF020AT-40I/NP	Microchip Technology	IC FLASH 2MBIT 40MHZ 8USON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 2Mb (256K x 8) Memory Interface: SPI Clock Frequency: 40MHz Write Cycle Time - Word, Page: 3.5ms Access Time: - Voltage - Supply: 1.65 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-USON (2x3)	封裝: 8-UFDFN Exposed Pad	庫存54,492	FLASH	FLASH	2Mb (256K x 8)	SPI	40MHz	3.5ms	-	1.65 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	8-UFDFN Exposed Pad	8-USON (2x3)
IS61WV102416FBLL-10T2LI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 16M PARALLEL 54TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 2.4 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	封裝: 54-TSOP (0.400", 10.16mm Width)	庫存3,760	SRAM	SRAM - Dual Port, Asynchronous	16Mb (1M x 16)	Parallel	-	10ns	10ns	2.4 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
AS4C64M8D3-12BCNTR	Alliance Memory, Inc.	IC DRAM 512M PARALLEL 78FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 512Mb (64M x 8) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: 0°C ~ 95°C (TA) Mounting Type: Surface Mount Package / Case: 78-VFBGA Supplier Device Package: 78-FBGA (8x10.5)	封裝: 78-VFBGA	庫存5,152	DRAM	SDRAM - DDR3	512Mb (64M x 8)	Parallel	800MHz	-	20ns	1.425 V ~ 1.575 V	0°C ~ 95°C (TA)	Surface Mount	78-VFBGA	78-FBGA (8x10.5)
IS61NLP102418-250B3I	ISSI, Integrated Silicon Solution Inc	IC SRAM 18M PARALLEL 165TFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mb (1M x 18) Memory Interface: Parallel Clock Frequency: 250MHz Write Cycle Time - Word, Page: - Access Time: 2.6ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-TFBGA (13x15)	封裝: 165-TBGA	庫存2,096	SRAM	SRAM - Synchronous	18Mb (1M x 18)	Parallel	250MHz	-	2.6ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	165-TBGA	165-TFBGA (13x15)
AT28HC256-12SU-T	Microchip Technology	IC EEPROM 256K PARALLEL 28SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ms Access Time: 120ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.295", 7.50mm Width) Supplier Device Package: 28-SOIC	封裝: 28-SOIC (0.295", 7.50mm Width)	庫存18,672	EEPROM	EEPROM	256Kb (32K x 8)	Parallel	-	10ms	120ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	28-SOIC (0.295", 7.50mm Width)	28-SOIC
MT35XL512ABA2G12-0SIT TR	Micron Technology Inc.	IC FLASH NOR 512MB 24TPBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (64M x 8) Memory Interface: Xccela Bus Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-T-PBGA (6x8)	封裝: 24-TBGA	庫存3,712	FLASH	FLASH - NOR	512Mb (64M x 8)	Xccela Bus	133MHz	-	-	2.7V ~ 3.6V	-40°C ~ 85°C	Surface Mount	24-TBGA	24-T-PBGA (6x8)
SM662GED-BDST	Silicon Motion, Inc.	IC FLASH 1TBIT EMMC 100BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (TLC) Memory Size: 1Tbit Memory Interface: eMMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 100-LBGA Supplier Device Package: 100-BGA (14x18)	封裝: -	Request a Quote	FLASH	FLASH - NAND (TLC)	1Tbit	eMMC	-	-	-	-	-40°C ~ 85°C	Surface Mount	100-LBGA	100-BGA (14x18)
MT55V512V36PF-10	Micron Technology Inc.	IC SRAM 18MBIT PAR 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - ZBT Memory Size: 18Mbit Memory Interface: Parallel Clock Frequency: 100 MHz Write Cycle Time - Word, Page: - Access Time: 5 ns Voltage - Supply: 2.375V ~ 2.625V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-FBGA (13x15)	封裝: -	Request a Quote	SRAM	SRAM - ZBT	18Mbit	Parallel	100 MHz	-	5 ns	2.375V ~ 2.625V	0°C ~ 70°C (TA)	Surface Mount	165-TBGA	165-FBGA (13x15)
FT24C64A-EDR-B	Fremont Micro Devices Ltd	IC EEPROM 64KBIT I2C 1MHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kbit Memory Interface: I2C Clock Frequency: 1 MHz Write Cycle Time - Word, Page: 5ms Access Time: 500 ns Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 85°C Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP	封裝: -	Request a Quote	EEPROM	EEPROM	64Kbit	I2C	1 MHz	5ms	500 ns	1.8V ~ 5.5V	-40°C ~ 85°C	Through Hole	8-DIP (0.300", 7.62mm)	8-DIP

MT49H16M18CBM-25 IT:B

Micron Technology Inc.

IC RLDRAM 288MBIT 400MHZ 144UBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 288Mb (16M x 18)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 144-TFBGA
Supplier Device Package: 144-µBGA (18.5x11)

封裝: 144-TFBGA

庫存2,288

DRAM

288Mb (16M x 18)

Parallel

400MHz

-

20ns

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

144-TFBGA

144-µBGA (18.5x11)

M48Z512AV-85PM1

STMicroelectronics

IC NVSRAM 4MBIT 85NS 32DIP

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 85ns
Access Time: 85ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 32-DIP Module (0.600", 15.24mm)
Supplier Device Package: 32-PMDIP Module

封裝: 32-DIP Module (0.600", 15.24mm)

庫存4,080

NVSRAM

NVSRAM (Non-Volatile SRAM)

4Mb (512K x 8)

Parallel

-

85ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Through Hole

32-DIP Module (0.600", 15.24mm)

32-PMDIP Module

IDT71V65803S133PF

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 133MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 9Mb (512K x 18)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 4.2ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封裝: 100-LQFP

庫存2,656

SRAM

SRAM - Synchronous ZBT

9Mb (512K x 18)

Parallel

133MHz

-

4.2ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

MT48H4M16LFB4-75:H TR

Micron Technology Inc.

IC SDRAM 64MBIT 133MHZ 54VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPSDR
Memory Size: 64Mb (4M x 16)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 6ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-VFBGA
Supplier Device Package: 54-VFBGA (8x8)

封裝: 54-VFBGA

庫存5,296

DRAM

SDRAM - Mobile LPSDR

64Mb (4M x 16)

Parallel

133MHz

15ns

6ns

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

54-VFBGA

54-VFBGA (8x8)

CY7C1021BN-15VXIT

Cypress Semiconductor Corp

IC SRAM 1MBIT 15NS 44SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 44-SOJ

封裝: 44-BSOJ (0.400", 10.16mm Width)

庫存2,864

SRAM

SRAM - Asynchronous

1Mb (64K x 16)

Parallel

-

15ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

44-BSOJ (0.400", 10.16mm Width)

44-SOJ

MT48V4M32LFB5-8:G

Micron Technology Inc.

IC SDRAM 128MBIT 125MHZ 90VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPSDR
Memory Size: 128Mb (4M x 32)
Memory Interface: Parallel
Clock Frequency: 125MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 7ns
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-VFBGA
Supplier Device Package: 90-VFBGA (8x13)

封裝: 90-VFBGA

庫存6,576

DRAM

SDRAM - Mobile LPSDR

128Mb (4M x 32)

Parallel

125MHz

15ns

7ns

2.3 V ~ 2.7 V

0°C ~ 70°C (TA)

Surface Mount

90-VFBGA

90-VFBGA (8x13)

DS2430A/T&R

Maxim Integrated

IC EEPROM 256BIT 1WIRE TO92-3

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256b (32 x 8)
Memory Interface: 1-Wire?
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 15µs
Voltage - Supply: -
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

封裝: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

庫存4,672

EEPROM

256b (32 x 8)

1-Wire?

-

15µs

-

-40°C ~ 85°C (TA)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

71T75802S150BGI8

IDT, Integrated Device Technology Inc

IC SRAM 18MBIT 150MHZ 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 18Mb (1M x 18)
Memory Interface: Parallel
Clock Frequency: 150MHz
Write Cycle Time - Word, Page: -
Access Time: 3.8ns
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

封裝: 119-BGA

庫存5,120

SRAM

SRAM - Synchronous ZBT

18Mb (1M x 18)

Parallel

150MHz

-

3.8ns

2.375 V ~ 2.625 V

-40°C ~ 85°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

71V67803S166BG

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 166MHZ 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 9Mb (512K x 18)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 3.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

封裝: 119-BGA

庫存5,888

SRAM

SRAM - Synchronous

9Mb (512K x 18)

Parallel

166MHz

-

3.5ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

IS64LPS12832A-200TQLA3-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT 200MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4Mb (128K x 32)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3.1ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

封裝: 100-LQFP

庫存7,552

SRAM

SRAM - Synchronous

4Mb (128K x 32)

Parallel

200MHz

-

3.1ns

3.135 V ~ 3.465 V

-40°C ~ 125°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

CY62128EV30LL-45ZAXAT

Cypress Semiconductor Corp

IC SRAM 1MBIT 45NS 32STSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 2.2 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Supplier Device Package: 32-sTSOP

封裝: 32-TFSOP (0.465", 11.80mm Width)

庫存2,992

SRAM

SRAM - Asynchronous

1Mb (128K x 8)

Parallel

-

45ns

2.2 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

32-TFSOP (0.465", 11.80mm Width)

32-sTSOP

AT88SC0808C-MJTG

Microchip Technology

IC EEPROM 8KBIT 5MHZ M2J

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kb (1K x 8)
Memory Interface: I2C
Clock Frequency: 5MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 35µs
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: M2 J, Smart Card Module (TWI)
Supplier Device Package: M2 - J Module (TWI)

封裝: M2 J, Smart Card Module (TWI)

庫存6,384

EEPROM

8Kb (1K x 8)

I2C

5MHz

5ms

35µs

2.7 V ~ 5.5 V

0°C ~ 70°C (TC)

Surface Mount

M2 J, Smart Card Module (TWI)

M2 - J Module (TWI)

BR25S640FVJ-WE2

Rohm Semiconductor

IC EEPROM 64KBIT 20MHZ 8SOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kb (8K x 8)
Memory Interface: SPI
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-TSSOP-BJ

封裝: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

庫存2,784

EEPROM

64Kb (8K x 8)

SPI

20MHz

5ms

-

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-TSSOP-BJ

93LC56BT-I/MC

Microchip Technology

IC EEPROM 2KBIT 2MHZ 8DFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (128 x 16)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 6ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VFDFN Exposed Pad
Supplier Device Package: 8-DFN (2x3)

封裝: 8-VFDFN Exposed Pad

庫存4,352

EEPROM

2Kb (128 x 16)

SPI

2MHz

6ms

-

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-VFDFN Exposed Pad

8-DFN (2x3)

24LC01BH-I/MS

Microchip Technology

IC EEPROM 1KBIT 400KHZ 8MSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

封裝: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

庫存4,032

EEPROM

1Kb (128 x 8)

I2C

400kHz

5ms

900ns

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-MSOP

CAT24C04YI-GT3JN

ON Semiconductor

IC EEPROM 4KBIT 400KHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (512 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封裝: 8-TSSOP (0.173", 4.40mm Width)

庫存2,064

EEPROM

4Kb (512 x 8)

I2C

400kHz

5ms

900ns

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

BR24T01FVJ-WE2

Rohm Semiconductor

IC EEPROM 1KBIT 400KHZ 8TSSOP-BJ

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.6 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-TSSOP-BJ

封裝: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

庫存6,688

EEPROM

1Kb (128 x 8)

I2C

400kHz

5ms

-

1.6 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-TSSOP-BJ

47C16-E/P

Microchip Technology

IC EERAM 16KBIT 1MHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EERAM
Technology: EEPROM, SRAM
Memory Size: 16Kb (2K x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 1ms
Access Time: 400ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

封裝: 8-DIP (0.300", 7.62mm)

庫存19,812

EERAM

EEPROM, SRAM

16Kb (2K x 8)

I2C

1MHz

1ms

400ns

4.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

BR24G01NUX-3TTR

Rohm Semiconductor

IC EEPROM 1KBIT 400KHZ 8VSON

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.6 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: VSON008X2030

封裝: 8-UFDFN Exposed Pad

庫存5,072

EEPROM

1Kb (128 x 8)

I2C

400kHz

5ms

-

1.6 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-UFDFN Exposed Pad

VSON008X2030

SST25WF020AT-40I/NP

Microchip Technology

IC FLASH 2MBIT 40MHZ 8USON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 2Mb (256K x 8)
Memory Interface: SPI
Clock Frequency: 40MHz
Write Cycle Time - Word, Page: 3.5ms
Access Time: -
Voltage - Supply: 1.65 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-USON (2x3)

封裝: 8-UFDFN Exposed Pad

庫存54,492

FLASH

2Mb (256K x 8)

SPI

40MHz

3.5ms

-

1.65 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

8-UFDFN Exposed Pad

8-USON (2x3)

IS61WV102416FBLL-10T2LI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 16M PARALLEL 54TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 2.4 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

封裝: 54-TSOP (0.400", 10.16mm Width)

庫存3,760

SRAM

SRAM - Dual Port, Asynchronous

16Mb (1M x 16)

Parallel

-

10ns

2.4 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

AS4C64M8D3-12BCNTR

Alliance Memory, Inc.

IC DRAM 512M PARALLEL 78FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 512Mb (64M x 8)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: 0°C ~ 95°C (TA)
Mounting Type: Surface Mount
Package / Case: 78-VFBGA
Supplier Device Package: 78-FBGA (8x10.5)

封裝: 78-VFBGA

庫存5,152

DRAM

SDRAM - DDR3

512Mb (64M x 8)

Parallel

800MHz

-

20ns

1.425 V ~ 1.575 V

0°C ~ 95°C (TA)

Surface Mount

78-VFBGA

78-FBGA (8x10.5)

IS61NLP102418-250B3I

ISSI, Integrated Silicon Solution Inc

IC SRAM 18M PARALLEL 165TFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (1M x 18)
Memory Interface: Parallel
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: -
Access Time: 2.6ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-TFBGA (13x15)

封裝: 165-TBGA

庫存2,096

SRAM

SRAM - Synchronous

18Mb (1M x 18)

Parallel

250MHz

-

2.6ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

165-TBGA

165-TFBGA (13x15)

AT28HC256-12SU-T

Microchip Technology

IC EEPROM 256K PARALLEL 28SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ms
Access Time: 120ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 28-SOIC

封裝: 28-SOIC (0.295", 7.50mm Width)

庫存18,672

EEPROM

256Kb (32K x 8)

Parallel

-

10ms

120ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

28-SOIC (0.295", 7.50mm Width)

28-SOIC

MT35XL512ABA2G12-0SIT TR

Micron Technology Inc.

IC FLASH NOR 512MB 24TPBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (64M x 8)
Memory Interface: Xccela Bus
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-T-PBGA (6x8)

封裝: 24-TBGA

庫存3,712

FLASH

FLASH - NOR

512Mb (64M x 8)

Xccela Bus

133MHz

-

2.7V ~ 3.6V

-40°C ~ 85°C

Surface Mount

24-TBGA

24-T-PBGA (6x8)

SM662GED-BDST

Silicon Motion, Inc.

IC FLASH 1TBIT EMMC 100BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (TLC)
Memory Size: 1Tbit
Memory Interface: eMMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 100-LBGA
Supplier Device Package: 100-BGA (14x18)

封裝: -

Request a Quote

FLASH

FLASH - NAND (TLC)

1Tbit

eMMC

-

-40°C ~ 85°C

Surface Mount

100-LBGA

100-BGA (14x18)

MT55V512V36PF-10

Micron Technology Inc.

IC SRAM 18MBIT PAR 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - ZBT
Memory Size: 18Mbit
Memory Interface: Parallel
Clock Frequency: 100 MHz
Write Cycle Time - Word, Page: -
Access Time: 5 ns
Voltage - Supply: 2.375V ~ 2.625V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-FBGA (13x15)

封裝: -

Request a Quote

SRAM

SRAM - ZBT

18Mbit

Parallel

100 MHz

-

5 ns

2.375V ~ 2.625V

0°C ~ 70°C (TA)

Surface Mount

165-TBGA

165-FBGA (13x15)

FT24C64A-EDR-B

Fremont Micro Devices Ltd

IC EEPROM 64KBIT I2C 1MHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kbit
Memory Interface: I2C
Clock Frequency: 1 MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 500 ns
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-DIP

封裝: -

Request a Quote

EEPROM

64Kbit

I2C

1 MHz

5ms

500 ns

1.8V ~ 5.5V

-40°C ~ 85°C

Through Hole

8-DIP (0.300", 7.62mm)

8-DIP